Detalhe da pesquisa
1.
Reflective metalens with an enhanced off-axis focusing performance.
Opt Express
; 30(19): 34117-34128, 2022 Sep 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-36242432
2.
Localized surface plasmon resonance-enhanced solar-blind Al0.4Ga0.6N MSM photodetectors exhibiting high-temperature robustness.
Nanotechnology
; 33(14)2022 Jan 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-34902849
3.
Regularly patterned multi-section GaN nanorod arrays grown with a pulsed growth technique.
Nanotechnology
; 27(2): 025303, 2016 Jan 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-26630269
4.
Multi-section core-shell InGaN/GaN quantum-well nanorod light-emitting diode array.
Opt Express
; 23(17): 21919-30, 2015 Aug 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-26368168
5.
Thermally induced variations of strain condition and emission behavior in flat and bendable light-emitting diodes on different substrates.
Opt Express
; 23(12): 15491-503, 2015 Jun 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-26193529
6.
Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array.
Opt Express
; 22 Suppl 7: A1799-809, 2014 Dec 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-25607494
7.
Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition.
Opt Express
; 22(14): 17303-19, 2014 Jul 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-25090544
8.
Efficiency improvement of a vertical light-emitting diode through surface plasmon coupling and grating scattering.
Opt Express
; 22 Suppl 3: A842-56, 2014 May 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-24922391
9.
Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall.
Nanotechnology
; 25(49): 495705, 2014 Dec 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-25412649
10.
Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors.
ACS Appl Mater Interfaces
; 16(5): 6088-6097, 2024 Feb 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-38278516
11.
Vertical light-emitting diodes with surface gratings and rough surfaces for effective light extraction.
Opt Express
; 21(15): 17686-94, 2013 Jul 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-23938641
12.
Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array.
Opt Lett
; 38(17): 3370-3, 2013 Sep 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-23988960
13.
Comparison of emission characteristics between the CdZnO/ZnO quantum wells on ZnO and GaN templates.
Opt Express
; 20(20): 21860-74, 2012 Sep 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-23037336
14.
Geometry and composition comparisons between c-plane disc-like and m-plane core-shell InGaN/GaN quantum wells in a nitride nanorod.
Opt Express
; 20(14): 15859-71, 2012 Jul 02.
Artigo
em Inglês
| MEDLINE | ID: mdl-22772276
15.
Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode.
Opt Express
; 20(10): 11321-35, 2012 May 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-22565753
16.
Ultrasensitive Flexible κ-Phase Ga2O3 Solar-Blind Photodetector.
ACS Appl Mater Interfaces
; 14(30): 34844-34854, 2022 Aug 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-35868327
17.
Transferable Ga2O3 Membrane for Vertical and Flexible Electronics via One-Step Exfoliation.
ACS Appl Mater Interfaces
; 14(42): 47922-47930, 2022 Oct 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-36241169
18.
Quasi-Epitaxial Growth of ß-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors.
ACS Appl Mater Interfaces
; 14(1): 1304-1314, 2022 Jan 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-34936328
19.
Ultrafast ablation dynamics in fused silica with a white light beam probe.
Opt Express
; 19(17): 16390-400, 2011 Aug 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-21935002
20.
Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode.
Opt Express
; 19 Suppl 4: A914-29, 2011 Jul 04.
Artigo
em Inglês
| MEDLINE | ID: mdl-21747562