Detalhe da pesquisa
1.
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy.
Nanotechnology
; 35(26)2024 Apr 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-38527360
2.
Density control of GaN nanowires at the wafer scale using self-assembled SiNxpatches on sputtered TiN(111).
Nanotechnology
; 34(37)2023 Jun 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-37311438
3.
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires.
Nanotechnology
; 34(46)2023 Sep 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-37579739
4.
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3.
Nanotechnology
; 30(11): 114001, 2019 Mar 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-30681980
5.
Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-x Bi x /GaAs quantum wells.
Nanotechnology
; 27(32): 325603, 2016 Aug 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-27364086
6.
Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns.
Nanotechnology
; 27(6): 065705, 2016 Feb 12.
Artigo
em Inglês
| MEDLINE | ID: mdl-26759358
7.
Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy.
J Chem Phys
; 144(21): 214704, 2016 Jun 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-27276963
8.
Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes.
Nanotechnology
; 26(8): 085605, 2015 Feb 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-25656795
9.
Axial InAs/GaAs heterostructures on silicon in a nanowire geometry.
Nanotechnology
; 25(48): 485602, 2014 Dec 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-25391271
10.
Nanoscale imaging of InN segregation and polymorphism in single vertically aligned InGaN/GaN multi quantum well nanorods by tip-enhanced Raman scattering.
Nano Lett
; 13(7): 3205-12, 2013 Jul 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-23795596
11.
Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission.
Nanotechnology
; 24(17): 175303, 2013 May 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-23558410
12.
Plasmon excitation in electron energy-loss spectroscopy for determination of indium concentration in (In,Ga)N/GaN nanowires.
Nanotechnology
; 23(48): 485701, 2012 Dec 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-23123435
13.
Strain accommodation in Ga-assisted GaAs nanowires grown on silicon (111).
Nanotechnology
; 23(30): 305703, 2012 Aug 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-22751267
14.
Current path in light emitting diodes based on nanowire ensembles.
Nanotechnology
; 23(46): 465301, 2012 Nov 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-23092897
15.
Macro- and micro-strain in GaN nanowires on Si(111).
Nanotechnology
; 22(29): 295714, 2011 Jul 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-21693799
16.
Monodisperse (In, Ga)N insertions in catalyst-free-grown GaN(0001) nanowires.
Nanotechnology
; 22(36): 365703, 2011 Sep 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-21836335
17.
Polarity determination by electron energy-loss spectroscopy: application to ultra-small III-nitride semiconductor nanocolumns.
Nanotechnology
; 22(41): 415701, 2011 Oct 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-21914935
18.
In situ analysis of strain relaxation during catalyst-free nucleation and growth of GaN nanowires.
Nanotechnology
; 21(24): 245705, 2010 Jun 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-20484796
19.
Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells.
Nanotechnology
; 21(30): 305201, 2010 Jul 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-20603534
20.
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Nature
; 406(6798): 865-8, 2000 Aug 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-10972282