Near-Unity Light-Matter Interaction in Mid-Infrared van der Waals Metasurfaces.

Accessing mid-infrared radiation is of great importance for a range of applications, including thermal imaging, sensing, and radiative cooling. Here, we study light interaction with hexagonal boron nitride (hBN) nanocavities and reveal strong and tunable resonances across its hyperbolic transition. In addition to conventional phonon-polariton excitations, we demonstrate that the high refractive index of hexagonal boron nitride outside the Reststrahlen band allows enhanced light-matter interactions in deep subwavelength (<λ/15) nanostructures across a broad 7-8 µm range. Emergence and interplay of Fabry-Perot and Mie-like resonances are examined experimentally and theoretically. Near-unity absorption and high quality (Q ≥ 80) resonance interaction in the vicinity of the hBN transverse optical phonon is further observed. Our study provides avenues to design highly efficient and ultracompact structures for controlling mid-infrared radiation and accessing strong light-matter interactions with hBN.

One-way light flow by spatio-temporal modulation.

The unidirectional flow of electrons that takes place in a conventional electronic diode has been a cornerstone in the development of the field of electronics. Achieving an equivalent one-way flow for light has been a long-standing problem. While a number of concepts have been suggested recently, attaining a unidirectional flow of light in a two-port system (e.g., a waveguiding configuration) is still challenging. Here, we present what we believe to be a novel approach for breaking reciprocity and achieving one-way flow of light. Taking a nanoplasmonic waveguide as an example, we show that a combination of time-dependent interband optical transitions, when in systems exhibiting a backward wave flow, can yield light transmission strictly in one direction. In our configuration, the energy flow is unidirectional: light is fully reflected in one direction of propagation, and is unperturbed in the other. The concept can find use in a range of applications including communications, smart windows, thermal radiation management, and solar energy harvesting.

Low-Power Laser Sailing for Fast-Transit Space Flight.

Space exploration is of paramount importance to advancing fundamental science and the global economy. However, today's space missions are limited by existing propulsion technologies. Here, we examine the use of laser-driven light sailing for agile Earth orbital maneuvering and for fast-transit exploration of the solar system and interstellar medium. We show that laser propulsion becomes practical at laser powers ≥100 kW and laser array sizes ∼1 m, which are feasible in the near term. Our analysis indicates that lightweight (1-100 g) wafer-scale (∼10 cm) spacecraft may be propelled by lasers to orbits that are beyond the reach of current systems. We discuss material requirements and photonic designs and introduce new figures of merit. We show that lightsails made of silicon nitride and boron nitride are particularly well suited for the discussed applications. Our architecture may pave the way to ubiquitous Earth orbital networks and fast-transit low-cost missions across the solar system.

Atomic-Void van der Waals Channel Waveguides.

Layered van der Waals materials allow creating unique atomic-void channels with subnanometer dimensions. Coupling light into these channels may further advance sensing, quantum information, and single molecule chemistries. Here, we examine theoretically limits of light guiding in atomic-void channels and show that van der Waals materials exhibiting strong resonances, excitonic and polaritonic, are ideally suited for deeply subwavelength light guiding. We predict that excitonic transition metal dichalcogenides can squeeze >70% of optical power in just <λ/100 thick channel in the visible and near-infrared. We also show that polariton resonances of hexagonal boron nitride allow deeply subwavelength (<λ/500) guiding in the mid-infrared. We further reveal effects of natural material anisotropy and discuss the influence of losses. Such van der Waals channel waveguides while offering extreme optical confinement exhibit significantly lower loss compared to plasmonic counterparts, thus paving the way to low-loss and deeply subwavelength optics.

Spatiotemporal Imaging of Thickness-Induced Band-Bending Junctions.

van der Waals materials exhibit naturally passivated surfaces and an ability to form versatile heterostructures to enable an examination of carrier transport mechanisms not seen in traditional materials. Here, we report a new type of homojunction termed a "band-bending junction" whose potential landscape depends solely on the difference in thickness between the two sides of the junction. Using MoS2 on Au as a prototypical example, we find that surface potential differences can arise from the degree of vertical band bending in thin and thick regions. Furthermore, by using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of charge carriers generated at this junction and find that lateral carrier separation is enabled by differences in the band bending in the vertical direction, which we verify with simulations. Band-bending junctions may therefore enable new optoelectronic devices that rely solely on band bending arising from thickness variations to separate charge carriers.

Publisher Correction: Materials challenges for the Starshot lightsail.

In the version of this Perspective originally published, the titles of the references were missing; all versions have now been amended to include them.

Publisher Correction: Materials challenges for the Starshot lightsail.

In the version of this Perspective originally published, Fig. 1 was missing the following credit line from the caption: 'Background image from ESA/Hubble (A. Fujii).' This has now been corrected in the online versions of the Perspective.

Gate-Variable Mid-Infrared Optical Transitions in a (Bi1-xSbx)2Te3 Topological Insulator.

We report mid-infrared spectroscopy measurements of ultrathin, electrostatically gated (Bi1-xSbx)2Te3 topological insulator films in which we observe several percent modulation of transmittance and reflectance as gating shifts the Fermi level. Infrared transmittance measurements of gated films were enabled by use of an epitaxial lift-off method for large-area transfer of topological insulator films from infrared-absorbing SrTiO3 growth substrates to thermal oxidized silicon substrates. We combine these optical experiments with transport measurements and angle-resolved photoemission spectroscopy to identify the observed spectral modulation as a gate-driven transfer of spectral weight between both bulk and 2D topological surface channels and interband and intraband channels. We develop a model for the complex permittivity of gated (Bi1-xSbx)2Te3 and find a good match to our experimental data. These results open the path for layered topological insulator materials as a new candidate for tunable, ultrathin infrared optics and highlight the possibility of switching topological optoelectronic phenomena between bulk and spin-polarized surface regimes.

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.

We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

Light-matter coupling in large-area van der Waals superlattices.

Two-dimensional (2D) crystals have renewed opportunities in design and assembly of artificial lattices without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Recent availability of uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. Here we present optical dispersion engineering in a superlattice structure comprising alternating layers of 2D excitonic chalcogenides and dielectric insulators. By carefully designing the unit cell parameters, we demonstrate greater than 90% narrow band absorption in less than 4 nm of active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in square-centimetre samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tuneable coupling constants. Our results demonstrate proof of concept structures with engineered optical properties and pave the way for a broad class of scalable, designer optical metamaterials from atomically thin layers.

Hybrid exciton-plasmon-polaritons in van der Waals semiconductor gratings.

Van der Waals materials and heterostructures that manifest strongly bound exciton states at room temperature also exhibit emergent physical phenomena and are of great promise for optoelectronic applications. Here, we demonstrate that nanostructured, multilayer transition metal dichalcogenides (TMDCs) by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-photonics. Hence, we show that by patterning the TMDCs into nanoresonators, strong dispersion and avoided crossing of exciton, cavity photons and plasmon polaritons with effective separation energy exceeding 410 meV can be controlled with great precision. We further observe that inherently strong TMDC exciton absorption resonances may be completely suppressed due to excitation of hybrid light-matter states and their interference. Our work paves the way to the next generation of integrated exciton optoelectronic nano-devices and applications in light generation, computing, and sensing.

Optical magnetism in planar metamaterial heterostructures.

Harnessing artificial optical magnetism has previously required complex two- and three-dimensional structures, such as nanoparticle arrays and split-ring metamaterials. By contrast, planar structures, and in particular dielectric/metal multilayer metamaterials, have been generally considered non-magnetic. Although the hyperbolic and plasmonic properties of these systems have been extensively investigated, their assumed non-magnetic response limits their performance to transverse magnetic (TM) polarization. We propose and experimentally validate a mechanism for artificial magnetism in planar multilayer metamaterials. We also demonstrate that the magnetic properties of high-index dielectric/metal hyperbolic metamaterials can be anisotropic, leading to magnetic hyperbolic dispersion in certain frequency regimes. We show that such systems can support transverse electric polarized interface-bound waves, analogous to their TM counterparts, surface plasmon polaritons. Our results open a route for tailoring optical artificial magnetism in lithography-free layered systems and enable us to generalize the plasmonic and hyperbolic properties to encompass both linear polarizations.

Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices.

Harnessing photoexcited "hot" carriers in metallic nanostructures could define a new phase of non-equilibrium optoelectronics for photodetection and photocatalysis. Surface plasmons are considered pivotal for enabling efficient operation of hot carrier devices. Clarifying the fundamental role of plasmon excitation is therefore critical for exploiting their full potential. Here, we measure the internal quantum efficiency in photoexcited gold (Au)-gallium nitride (GaN) Schottky diodes to elucidate and quantify the distinct roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance. We show that plasmon excitation does not influence the electronic processes occurring within the hot carrier device. Instead, the metal band structure and carrier transport processes dictate the observed hot carrier photocurrent distribution. The excellent agreement with parameter-free calculations indicates that photoexcited electrons generated in ultra-thin Au nanostructures impinge ballistically on the Au-GaN interface, suggesting the possibility for hot carrier collection without substantial energy losses via thermalization.

High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures.

We report experimental measurements for ultrathin (<15 nm) van der Waals heterostructures exhibiting external quantum efficiencies exceeding 50% and show that these structures can achieve experimental absorbance >90%. By coupling electromagnetic simulations and experimental measurements, we show that pn WSe2/MoS2 heterojunctions with vertical carrier collection can have internal photocarrier collection efficiencies exceeding 70%.

Dynamically controlled Purcell enhancement of visible spontaneous emission in a gated plasmonic heterostructure.

Emission control of colloidal quantum dots (QDs) is a cornerstone of modern high-quality lighting and display technologies. Dynamic emission control of colloidal QDs in an optoelectronic device is usually achieved by changing the optical pump intensity or injection current density. Here we propose and demonstrate a distinctly different mechanism for the temporal modulation of QD emission intensity at constant optical pumping rate. Our mechanism is based on the electrically controlled modulation of the local density of optical states (LDOS) at the position of the QDs, resulting in the modulation of the QD spontaneous emission rate, far-field emission intensity, and quantum yield. We manipulate the LDOS via field effect-induced optical permittivity modulation of an ultrathin titanium nitride (TiN) film, which is incorporated in a gated TiN/SiO2/Ag plasmonic heterostructure. The demonstrated electrical control of the colloidal QD emission provides a new approach for modulating intensity of light in displays and other optoelectronics.

Electrically controlled one-way photon flow in plasmonic nanostructures.

Photonics is frequently regarded as a potential pathway for substituting current solid-state electronics and as a promise for higher-speed all-optical computing. The fundamental challenges facing nanophotonics and electronics of the future are nanoscale on-chip integration of electronics and photonics with an efficient electric field tuning of light propagation, dynamic access to the light sources and material parameters of the system, as well as isolation of optical signals analogous to that in electronics. Here we suggest a paradigm for a monolithically integrated electronic control over the light propagation in nanoscale plasmonic waveguides. We theoretically demonstrate that magnetic field induced by the direct electric current flowing in metallic constituents of plasmonic nanostructures alters the material parameters and thus the optical signal flow. We use this principle for the design of an electrically controlled subwavelength optical isolator.