The association of HBV infection and head and neck cancer: a systematic review and meta-analysis.

BACKGROUND: Hepatitis B virus (HBV) infections is an important public health problem worldwide and closely affect extrahepatic cancer. Several recent studies have investigated the relationship between HBV infection and head and neck cancer (HNC), but their findings were inconsistent.In order to address the limitations of small sample sizes, we conducted a meta-analysis to assess the association between HBV and HNC. METHODS: We systematically searched PubMed, Web of Science, Embase, Scopus, Cochrane Library, and China National Knowledge Infrastructure from inception to August 2023. Original articles published as a case-control or cohort study were included. HBV infection was identified by HBsAg, HBV DNA or ICD codes. Review articles, meeting abstracts, case reports, communications, editorials and letters were excluded, as were studies in a language other than English or Chinese. According to the MOOSE guidelines, frequencies reported for all dichotomous variables were extracted by two reviewers independently. Similarly, the outcomes of OR, RR or HR, and 95% CIs after adjusting for age and gender were collected. RESULTS: Thirteen relevant studies and 58,006 patients with HNC were included. Our analysis revealed a positive correlation between HBV and HNC (OR = 1.50; 95% CI: 1.28-1.77). After adjusting for age and gender, the similar result (OR = 1.30; 95% CI: 1.10-1.54) was obtained. Subgroup analysis further demonstrated a significant association between HBV infection and oral cancer (OR = 1.24; 95% CI: 1.05-1.47), as well as nasopharyngeal carcinoma (OR = 1.41; 95% CI: 1.26-1.58). However, due to the limited number of studies included, the statistical significance was not reached for cancer of the oropharynx (OR = 1.82; 95% CI: 0.66-5.05), hypopharynx (OR = 1.33; 95% CI: 0.88-2.00), and larynx (OR = 1.25; 95% CI: 0.69-2.24) after adjusting for age and gender. When excluding the interference of HIV/HCV, smoking and alcohol use, the final outcome (OR = 1.17; 95% CI: 1.01-1.35) got the same conclusion. CONCLUSIONS: Our study confirmed a positive relationship between HNC, specifically oral cancer and nasopharyngeal carcinoma, and HBV infection. However, further investigation is required at the molecular level to gather additional evidence in HNC.

355 nm ultraviolet laser output based on a PPMgLN crystal.

This paper reports the method of generating a 355 nm ultraviolet (UV) quasicontinuous pulse laser by using two periodically poled Mg-doped lithium niobate (PPMgLN) crystals in a single-pass cascade. In the first PPMgLN crystal with a length of 20 mm and a first-order-poled period of 6.97 µm, the second-harmonic light of a 532 nm laser with 780 mW is generated from the 1064 nm laser with an average power of 2 W; After that, in the second PPMgLN crystal with a length of 15 mm and a third-order-poled period of 5.30 µm, the 532 nm laser generated was combined with the 1064 nm laser remaining through the first PPMgLN crystal to obtain a 355 nm UV laser with a maximum output average power of 20 mW, a repetition rate of 40 kHz, a pulse width of 49 ns, and a peak power of 10 W. Compared with existing reports, we have higher peak power and single pulse energy, which is an important application of the PPMgLN crystal. This paper will provide an important case for the realization of a 355 nm UV quasicontinuous or a continuous laser.

Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform.

A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride-on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide structure. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the structure parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.

Broadband yellow-orange light generation based on a step-chirped PPMgLN ridge waveguide.

Yellow-orange lights, valuable in photodynamic therapies, spectroscopy, and optogenetics, are limited by the narrow bandwidth and bulky setup via the conventional Raman or optical parametric oscillation processes. Moreover, flatness in the broad-band spectrum is also important for the aforementioned applications with extended functions. In this paper, by carefully designing grating-periods of a step-chirped PPMgLN ridge waveguide for sum frequency generation (SFG), we report a compact broad-band yellow-orange light with bandwidth of 5.6 nm and an un-reported flatness (<1.5 dB). Correspondingly, the optical conversion efficiency is 232.08%/W, which is the best SFG efficiency for PPMgLN at the yellow-orange region, to the best of our knowledge. The results could also be adopted for other broad-band SFG process toward the vis-infrared region in an integrated structure.

CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber.

A CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber is proposed. Three layers of a silicon nitride waveguide array with the same structures are used in the top oxide cladding of the chip to achieve high coupling efficiency and to simplify the mode transformation structure. Optimal total coupling loss at the wavelength of 1550 nm, -0.49dB for TE mode polarization and -0.92dB for TM mode polarization is obtained. The -1dB bandwidth is beyond 160 nm for TE mode polarization and ∼130nm for TM mode polarization, respectively. A significant reduction in the packaging cost of silicon photonic chips is anticipated. Meanwhile, the structure holds vast potential for on-chip three-dimensional photonic integrations or fiber-to-chip, chip-to-chip optical interconnections.