ABSTRACT
The Berry curvature and orbital magnetic moment (OMM) come from either inversion symmetry or time-reversal symmetry breaking in quantum materials. Here, we demonstrate the significance of OMMs and Berry curvature in planar Hall effect (PHE) in antiferromagnetic topological insulator MnBi2Te4 flakes. We observe a PHE with period of π and positive magnitude at low fields, resembling the PHE of the surface states in nonmagnetic topological insulators. Remarkably, a novel predominant PHE with period of π/2 and negative magnitude emerges below the Néel temperature with B > 10 T. Our theoretical calculations reveal that this unusual π/2-periodic PHE originates from the topological OMMs of bulk Dirac electrons. Moreover, the competition between the contributions from the bulk and the surface states leads to nontrivial evolutions of PHE and anisotropic magnetoresistance. Our results reveal intriguing electromagnetic response due to the OMMs and also provide insight into the potential applications of magnetic topological insulators in spintronics.
ABSTRACT
While pyrite-type PtBi_{2} with a face-centered cubic structure has been predicted to be a three-dimensional (3D) Dirac semimetal, experimental study of its physical properties remains absent. Here we report the angular-dependent magnetoresistance measurements of a PtBi_{2} single crystal under high magnetic fields. We observed extremely large unsaturated magnetoresistance (XMR) up to (11.2×10^{6})% at T=1.8 K in a magnetic field of 33 T, which is comparable to the previously reported Dirac materials, such as WTe_{2}, LaSb, and NbP. The crystals exhibit an ultrahigh mobility and significant Shubnikov-de Hass quantum oscillations with a nontrivial Berry phase. The analysis of Hall resistivity indicates that the XMR can be ascribed to the nearly compensated electron and hole. Our experimental results associated with the ab initio calculations suggest that pyrite PtBi_{2} is a topological semimetal candidate that might provide a platform for exploring topological materials with XMR in noble metal alloys.
ABSTRACT
Time-dependent second-harmonic generation (TD-SHG) is an emerging sensitive and fast method to qualitatively evaluate the interface quality of the oxide/Si heterostructures, which is closely related to the interfacial electric field. Here, the TD-SHG is used to explore the interface quality of atomic layer deposited HfO2 films on Si substrates. The critical SHG parameters, such as the initial SHG signal and characteristic time constant, are compared with the fixed charge density (Qox) and the interface state density (Dit) extracted from the conventional electrical characterization method. It reveals that the initial SHG signal linearly decreases with the increase in Qox, while Dit is linearly correlated to the characteristic time constant. It verifies that the TD-SHG is a sensitive and fast method, as well as simple and noncontact, for evaluating the interface quality of oxide/Si heterostructures, which may facilitate the in-line semiconductor test.
ABSTRACT
Exploring the topological surface state of a topological semimetal by the transport technique has always been a big challenge because of the overwhelming contribution of the bulk state. In this work, we perform systematic angular-dependent magnetotransport measurements and electronic band calculations on SnTaS2 crystals, a layered topological nodal-line semimetal. Distinct Shubnikov-de Haas quantum oscillations were observed only in SnTaS2 nanoflakes when the thickness was below about 110 nm, and the oscillation amplitudes increased significantly with decreasing thickness. By analysis of the oscillation spectra, together with the theoretical calculation, a two-dimensional and topological nontrivial nature of the surface band is unambiguously identified, providing direct transport evidence of drumhead surface state for SnTaS2. Our comprehensive understanding of the Fermi surface topology of the centrosymmetric superconductor SnTaS2 is crucial for further research on the interplay of superconductivity and nontrivial topology.
ABSTRACT
2D material (2DM) based photodetectors with broadband photoresponse are of great value for a vast number of applications such as multiwavelength photodetection, imaging, and night vision. However, compared with traditional photodetectors based on bulk material, the relatively slow speed performance of 2DM based photodetectors hinders their practical applications. Herein, a submicrosecond-response photodetector based on ternary telluride InSiTe3 with trigonal symmetry and layered structure was demonstrated in this study. The InSiTe3 based photodetectors exhibit an ultrafast photoresponse (545-576 ns) and broadband detection capabilities from the ultraviolet (UV) to the near-infrared (NIR) optical communication region (365-1310 nm). Besides, the photodetector presents an outstanding reversible and stable photoresponse in which the response performance remains consistent within 200â¯000 cycles of switch operation. These significant findings suggest that InSiTe3 can be a promising candidate for constructing fast response broadband 2DM based optoelectronic devices.
ABSTRACT
We report a systematic study on the thickness-dependent superconductivity and transport properties in exfoliated layered topological superconductor ß-PdBi2. The superconducting transition temperature Tc is found to decrease with the decreasing thickness. Below a critical thickness of 45 nm, the superconductivity is suppressed, but followed by an abrupt resistance jump near Tc, which is in opposite to the behavior in a superconductor. We attribute suppressed Tc to the enhanced disorder as the thickness decreases. The possible physical mechanisms were discussed for the origination of sharply increased resistance in thinner ß-PdBi2 samples.
ABSTRACT
Recently, the Zintl phase SrIn2P2single crystal was proposed to be a topological insulator candidate under lattice strain. Here, we report systematic electrical transport studies on the unstrained layered SrIn2P2single crystals. The resistance presents a minimum value aroundTc= 136 K and then increases remarkably at low temperature. Distinct negative magnetoresistance belowTc, combined with the anomalous resistance, implies the carriers are weak localized at low temperature due to strong quantum coherence. Further analysis based on three-dimensional weak localization (WL) model suggests that the electron-phonon interaction dominates the phase decoherence process. Moreover, Hall measurements indicate that the transport properties are mainly dominated by hole-type carriers, and the WL effect is obviously affected by the carrier transport. These findings not only provide us a promising platform for the fundamental physical research but also open up a new route for exploring the potential electronic applications.
ABSTRACT
Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there are unique band structures of a unilateral depletion region. The electrically tunable junctions can be switched from n-n to p-p diodes, and the corresponding rectification ratio increases from about 1 to 1.2 × 104. In addition, an obvious photovoltaic behavior is observed at zero gate voltage, which exhibits a large open voltage of 0.49 V and a short-circuit current of 0.125 nA under visible light irradiation. In addition, due to the unilateral depletion region, the diode can achieve a high detectivity of 4.4 × 1010 Jones and a fast photoresponse speed of 0.18 ms at Vg = 0 and Vds = 0. The studies not only demonstrated the great potential of the lateral homojunction photodiodes for a self-power photodetector but also allowed for the development of other functional devices, such as a nonvolatile programmable diode for logic rectifiers.
ABSTRACT
We present the systematic de Haas-van Alphen (dHvA) quantum oscillations studies on the recently discovered topological Dirac semimetal pyrite PtBi2 single crystals. Remarkable dHvA oscillations are emerged at a low field about 1.5â¯T. From the analyses of the dHvA oscillations, we extract the high quantum mobilities, light effective masses and phase shift factors for the Dirac fermions in pyrite PtBi2. From the angular dependence of the dHvA oscillations, we map out the topology of the Fermi surface. Furthermore, we identify two additional oscillation frequencies that are not probed by the SdH oscillations, which provides us with opportunities to further understand its Fermi surface topology.
ABSTRACT
The spin dynamics of the two-dimensional triangular-lattice antiferromagnet AgCrS2 is investigated by electron spin resonance (ESR) spectroscopy. The g-factor is found to show an unusual non-monotonously temperature dependent behavior, which, along with the super-Curie behavior observed in the ESR intensity data, provides clear evidence for the competition between ferromagnetic and antiferromagnetic fluctuations at temperatures well above T N. On approaching the Néel temperature T N from above, the linewidth is found to diverge. Such a divergent behavior could be well described by the Kawamura-Miyashita model due to Z2 type magnetic vortex-antivortex pairing, which is consistent with the expectation for a 2D Heisenberg magnetic system.
ABSTRACT
Triply degenerate point (TP) fermions in tungsten-carbide-type materials (e.g., MoP), which represent new topological states of quantum matter, have generated immense interest recently. However, the TPs in these materials are found to be far below the Fermi level, leading to the TP fermions having less contribution to low-energy quasiparticle excitations. Here, we theoretically predict the existence of TP fermions with TP points close to the Fermi level in trigonal layered PtBi2 by ab initio calculations, and experimentally verify the predicted band topology by magnetotransport measurements under high magnetic fields up to 40 T. Analyses of both the pronounced Shubnikov-de Haas and de Haas-van Alphen oscillations reveal the existence of six principal Fermi pockets. Our experimental results, together with those from ab initio calculations, reveal the interplay between transport behaviors and unique electronic structures, and support the existence of TP fermions in trigonal layered PtBi2.