Investigation of field emission and photoemission properties of high-purity single-walled carbon nanotubes synthesized by hydrogen arc discharge.

Single-walled carbon nanotubes (SWCNTs) were directly synthesized by a hydrogen arc-discharge method by using only Fe catalyst. The synthesized carbon materials indicated high-purity SWCNTs without amorphous carbon materials from SEM observation. The SWCNTs had diameters of 1.5-2.0 nm from TEM and Raman observation. After a simple purification, TGA indicated that SWCNTs had a purity of ca. 90.1 wt %. Field emission from the SWCNT emitters which were fabricated by using a spray method was measured by a diode structure. The vertically aligned SWCNT emitters showed the low turn-on voltage of 0.86 V/microm and a high emission-current density of 3 mA/cm2 at an applied field of about 3 V/microm. From a Fowler-Nordheim plot, the vertically aligned SWCNT revealed a high field enhancement factor of 2.35 x 10(4). The photoemission measurements, excited by a photon energy of 360 eV, showed significantly delocalized graphite-pi states at the purified SWCNTs. Here, we investigated that the field-emission properties of SWCNTs would be attributed to the high electronic density of states near Fermi energy, including the delocalized graphite-pi states.

Optical and field emission properties of thin single-crystalline GaN nanowires.

Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/microm and the current density was about 0.2 mA/cm(2) at 17.5 V/microm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.