ABSTRACT
A nano-scale analogue to the double cantilever experiment that combines instrumented nano-indentation and atomic force microscopy is used to precisely and locally measure the adhesion of InP bonded on sub-100 nm patterned Si using oxide-free or oxide-mediated bonding. Surface-bonding energies of 0.548 and 0.628 J m(-2), respectively, are reported. These energies correspond in turn to 51% and 57% of the surface bonding energy measured in unpatterned regions on the same samples, i.e. the proportion of unetched Si surface in the patterned areas. The results show that bonding on patterned surfaces can be as robust as on unpatterned surfaces, provided care is taken with the post-patterning surface preparation process and, therefore, open the path towards innovative designs that include patterns embedded in the Si guiding layer of hybrid III-V/Si photonic integrated circuits.
ABSTRACT
A biperiodic nanostructuration consisting of a super-periodicity added to a nanohole lattice of subwavelength pitch is demonstrated to provide both modal confinement and wavelength selectivity within a hybrid III-V on a silicon waveguide. The wavelength-selective behavior stems from finely tuned larger holes. Such biperiodic hybrid waveguides have been fabricated by oxide-free bonding III-V material on silicon and display well-defined stop bands. Such nanostructured waveguides offer the versatility for designing advanced optical functions within hybrid devices. Moreover, keeping the silicon waveguide surface planar, such nanostructured waveguides are compatible with electrical operation across the oxide-free hybrid interface.