ABSTRACT
Diamond X-ray detectors with conducting nitrogen-incorporated ultra-nanocrystalline diamond (N-UNCD) films as electrodes were fabricated to measure X-ray beam flux and position. Structural characterization and functionality tests were performed for these devices. The N-UNCD films grown on unseeded diamond substrates were compared with N-UNCD films grown on a seeded silicon substrate. The feasibility of the N-UNCD films acting as electrodes for X-ray detectors was confirmed by the stable performance in a monochromatic X-ray beam. The fabrication process is able to change the surface status which may influence the signal uniformity under low bias, but this effect can be neglected under full collection bias.
ABSTRACT
BACKGROUND/AIMS: Early and late event-related potential (ERP) responses, representing early subconscious and late motivational processes, were recorded for positive emotional words related to 'wanting' and 'liking', in dependence of the dopamine-related Taq1A genotype (ANKK1/DRD2). Research suggests that 'wanting' as opposed to 'liking' is related to dopaminergic processes. Therefore, it was hypothesized that risk allele carriers of the Taq1A polymorphism exhibit late ERP changes in reaction to words representing incentive motivation, i.e. 'wanting' (word categories 'lust' and 'anticipation'), but not to words representing 'liking' ('closeness'). METHODS: Seventy-two male participants performed an emotional-word Stroop task during EEG recording and were genotyped according to the Taq1A polymorphism of ANKK1/DRD2. RESULTS: Positive emotional words related to anticipation and lust revealed blunted responses in the late positive potential (LPP) in carriers of the A1 allele, an effect absent in response to 'liking'-related words. These differences were not evident in the earlier posterior negativity (EPN). CONCLUSION: As no differences in dependence of the Taq1A genotype were observed in reaction to 'wanting'- and 'liking'-related words in the EPN, but merely in the LPP, it can be assumed that incentive-motivational stimuli only modify motivation-related ERP responses in carriers of the A1 allele of the Taq1A polymorphism, indicating the role of dopamine in late ERP components.
Subject(s)
Cerebral Cortex/physiology , Emotions/physiology , Motivation/genetics , Polymorphism, Single Nucleotide , Protein Serine-Threonine Kinases/genetics , Protein Serine-Threonine Kinases/physiology , Receptors, Dopamine D2/genetics , Receptors, Dopamine D2/physiology , Adolescent , Adult , Alleles , Cues , Electroencephalography , Evoked Potentials , Genetic Association Studies , Humans , Male , Stroop Test , Young AdultABSTRACT
Two transmission-mode diamond X-ray beam position monitors installed at National Synchrotron Light Source (NSLS) beamline X25 are described. Each diamond beam position monitor is constructed around two horizontally tiled electronic-grade (p.p.b. nitrogen impurity) single-crystal (001) CVD synthetic diamonds. The position, angle and flux of the white X-ray beam can be monitored in real time with a position resolution of 500â nm in the horizontal direction and 100â nm in the vertical direction for a 3â mm × 1â mm beam. The first diamond beam position monitor has been in operation in the white beam for more than one year without any observable degradation in performance. The installation of a second, more compact, diamond beam position monitor followed about six months later, adding the ability to measure the angular trajectory of the photon beam.
Subject(s)
Synchrotrons/instrumentation , Diamond/chemistry , Equipment Design , X-RaysABSTRACT
The diamond amplifier (DA) is a new device for generating high-current, high-brightness electron beams. Our transmission-mode tests show that, with single-crystal, high-purity diamonds, the peak current density is greater than 400 mA/mm², while its average density can be more than 100 mA/mm². The gain of the primary electrons easily exceeds 200, and is independent of their density within the practical range of DA applications. We observed the electron emission. The maximum emission gain measured was 40, and the bunch charge was 50 pC/0.5 mm². There was a 35% probability of the emission of an electron from the hydrogenated surface in our tests. We identified a mechanism of slow charging of the diamond due to thermal ionization of surface states that cancels the applied field within it. We also demonstrated that a hydrogenated diamond is extremely robust.
ABSTRACT
Diamond, a highly radiation-resistant material, is considered a nearly ideal material for radiation detection, particularly in high-energy physics. In this study, radiation damage from high-energy proton beams was induced in diamond crystals to determine exposure lifetime in detectors made from this material; the effects were investigated using non-destructive x-ray techniques and through the FLUKA simulation package. Two diamond detectors were irradiated by an 800 MeV proton beam at different fluence rates, and the real-time current response was recorded to observe degradation in the signal over time. It was determined that the proton fluence rate had a significant effect on the device degradation. The detector performance from the irradiated detectors was characterized using x-ray beam-induced current measurements, and the mechanism of proton radiation damage to diamond sensors, especially the radiation effects on carrier transport, was studied. The vacancies generated from proton irradiation were considered the major source of detector degradation by trapping holes and inducing an internal electric field. Simulation results from the FLUKA package revealed an uneven distribution of the radiation-induced vacancies along the beam path, and the corresponding detector signals calculated from the simulation results displayed a good match to the experimental results.
ABSTRACT
Here we introduce time-resolved electric force microscopy measurements to directly and locally probe the kinetics of charge trap formation in a polycrystalline pentacene thin-film transistor. We find that the trapping rate depends strongly on the initial concentration of free holes and that trapped charge is highly localized. The observed dependence of trapping rate on the hole chemical potential suggests that the trapping process should not be viewed as a filling of midgap energy levels, but instead as a process in which the very creation of trapped states requires the presence of free holes.
ABSTRACT
High purity, single crystal CVD diamond plates are screened for quality and instrumented into a sensor assembly for quantitative characterization of flux and position sensitivity. Initial investigations have yielded encouraging results and have led to further development. Several limiting complications are observed and discussed, as well as mitigations thereof. For example, diamond quality requirements for x-ray diodes include low nitrogen impurity and crystallographic defectivity. Thin electrode windows and electronic readout performance are ultimately also critical to device performance. Promising features observed so far from prototype devices include calculable responsivity, flux linearity, position sensitivity and timing performance. Recent results from testing in high flux and high speed applications are described.