In Situ Formation of Ge Nanoparticles by Annealing of Al-Ge-N Thin Films Followed by HAXPES and XRD.

Ge nanoparticles embedded in thin films have attracted a lot of attention due to their promising optical and electronic properties that can be tuned by varying the particle size and choice of matrix material. In this study, Ge nanoparticle formation was investigated for Al-Ge-N based thin films by simultaneous measurements of HAXPES and grazing incidence XRD during in situ annealing in vacuum conditions. As-deposited Al-Ge-N thin films, synthesized by reactive dc magnetron sputtering, consisted of a nanocrystalline (Al1-xGex)Ny solid solution and an amorphous tissue phase of Ge3Ny. Upon annealing to 750 °C, elemental Ge was formed shown by both HAXPES and XRD measurements, and N2 gas was released as measured by a mass spectrometer. Postannealed ex situ analysis by SEM and TEM showed that the elemental Ge phase formed spherical nanoparticles on the surface of the film, with an average size of 210 nm. As the annealing temperature increased further to 850 °C, the Ge particles on the film surface evaporated, while the phase segregation of Ge still could be observed within the film. Thus, these results show the possibility for a controlled synthesis of Ge nanoparticles through annealing of Al-Ge-N thin films to produce materials suitable for use in electronic or optoelectronic devices.

Microstructural Characterization of Sulfurization Effects in Cu(In,Ga)Se2 Thin Film Solar Cells.

Surface sulfurization of Cu(In,Ga)Se2 (CIGSe) absorbers is a commonly applied technique to improve the conversion efficiency of the corresponding solar cells, via increasing the bandgap towards the heterojunction. However, the resulting device performance is understood to be highly dependent on the thermodynamic stability of the chalcogenide structure at the upper region of the absorber. The present investigation provides a high-resolution chemical analysis, using energy dispersive X-ray spectrometry and laser-pulsed atom probe tomography, to determine the sulfur incorporation and chemical re-distribution in the absorber material. The post-sulfurization treatment was performed by exposing the CIGSe surface to elemental sulfur vapor for 20 min at 500°C. Two distinct sulfur-rich phases were found at the surface of the absorber exhibiting a layered structure showing In-rich and Ga-rich zones, respectively. Furthermore, sulfur atoms were found to segregate at the absorber grain boundaries showing concentrations up to ~7 at% with traces of diffusion outwards into the grain interior.

Elemental Distribution in CrNbTaTiW-C High Entropy Alloy Thin Films.

The microstructure and distribution of the elements have been studied in thin films of a near-equimolar CrNbTaTiW high entropy alloy (HEA) and films with 8 at.% carbon added to the alloy. The films were deposited by magnetron sputtering at 300°C. X-ray diffraction shows that the near-equimolar metallic film crystallizes in a single-phase body centered cubic (bcc) structure with a strong (110) texture. However, more detailed analyses with transmission electron microscopy (TEM) and atom probe tomography (APT) show a strong segregation of Ti to the grain boundaries forming a very thin Ti-Cr rich interfacial layer. The effect can be explained by the large negative formation enthalpy of Ti-Cr compounds and shows that CrNbTaTiW is not a true HEA at lower temperatures. The addition of 8 at.% carbon leads to the formation of an amorphous structure, which can be explained by the limited solubility of carbon in bcc alloys. TEM energy-dispersive X-ray spectroscopy indicated that all metallic elements are randomly distributed in the film. The APT investigation, however, revealed that carbide-like clusters are present in the amorphous film.

Electrochemical lithiation/delithiation of SnP2O7 observed by in situ XRD and ex situ7Li/³¹P NMR, and ¹¹9Sn Mössbauer spectroscopy.

SnP2O7 was prepared by a sol-gel route. The structural changes of tin pyrophosphate during the electrochemical lithiation were followed by using in situ XRD measurements that reveal the existence of a crystalline phase at the beginning of the discharge process. Nevertheless, it becomes amorphous after the full discharge as a result of a conversion reaction leading to the formation of LixSny alloys. The electrochemical tests show a high capacity with high retention upon cycling. To better understand the reaction mechanism of SnP2O7 with Li, several techniques were applied, such as ex situ(119)Sn Mössbauer and ex situ(7)Li and (31)P NMR spectroscopies with which we can follow the changes in the local environment of each element during cycling.

High-Strain-Induced Local Modification of the Electronic Properties of VO2 Thin Films.

Vanadium dioxide (VO2) is a popular candidate for electronic and optical switching applications due to its well-known semiconductor-metal transition. Its study is notoriously challenging due to the interplay of long- and short-range elastic distortions, as well as the symmetry change and the electronic structure changes. The inherent coupling of lattice and electronic degrees of freedom opens the avenue toward mechanical actuation of single domains. In this work, we show that we can manipulate and monitor the reversible semiconductor-to-metal transition of VO2 while applying a controlled amount of mechanical pressure by a nanosized metallic probe using an atomic force microscope. At a critical pressure, we can reversibly actuate the phase transition with a large modulation of the conductivity. Direct tunneling through the VO2-metal contact is observed as the main charge carrier injection mechanism before and after the phase transition of VO2. The tunneling barrier is formed by a very thin but persistently insulating surface layer of the VO2. The necessary pressure to induce the transition decreases with temperature. In addition, we measured the phase coexistence line in a hitherto unexplored regime. Our study provides valuable information on pressure-induced electronic modifications of the VO2 properties, as well as on nanoscale metal-oxide contacts, which can help in the future design of oxide electronics.