High-Purity Generation and Switching of Twisted Single Photons.

Quantum technologies, if scaled into a high-dimensional Hilbert space, can dramatically enhance connection capabilities with supporting higher bit rates and ultrasecure information transfer. Twisted single photons, carrying orbital angular momentum (OAM) as an unbounded dimension, could address the growing demand for high-dimensional quantum information encoding and transmission. By hybrid integration of two-dimensional semiconductor WSe_{2} with a spin-orbit-coupled microring resonator, we demonstrate an integrated tunable twisted single photon source with the ability to precisely define and switch between highly pure spin-OAM states. Our results feature a single photon purity of g^{(2)}(0)∼0.13 with a cavity-enhanced quantum yield of 76% and a high OAM mode purity up to 96.9%. Moreover, the demonstrated quantum-chiral control can also enable new quantum functionality such as single photon routing for efficient quantum information processing on chip.

Enhanced Emission from Interlayer Excitons Coupled to Plasmonic Gap Cavities.

The emergence of interlayer excitons (IEs) from atomic layered transition metal dichalcogenides (TMDCs) heterostructures has drawn tremendous attention due to their unique and exotic optoelectronic properties. Coupling the IEs into optical cavities provides distinctive electromagnetic environments which plays an important role in controlling multiple optical processes such as optical nonlinear generation or photoluminescence enhancement. Here, the integration of IEs in TMDCs into plasmonic nanocavities based on a nanocube on a metallic mirror is reported. Spectroscopic studies reveal an order of magnitude enhancement of the IE at room temperature and a 5-time enhancement in fluorescence at cryogenic temperatures. Cavity modeling reveals that the enhancement of the emission is attributed to both increased excitation efficiency and Purcell effect from the cavity. The results show a novel method to control the excitonic processes in TMDC heterostructures to build high performance photonics and optoelectronics devices.

Exciton Dipole Orientation of Strain-Induced Quantum Emitters in WSe2.

Transition metal dichalcogenides are promising semiconductors to enable advances in photonics and electronics and have also been considered as a host for quantum emitters. Particularly, recent advances demonstrate site-controlled quantum emitters in WSe2 through strain deformation. Albeit essential for device integration, the dipole orientation of these strain-induced quantum emitters remains unknown. Here we employ angular-resolved spectroscopy to experimentally determine the dipole orientation of strain-induced quantum emitters. It is found that with increasing local strain the quantum emitters in WSe2 undergo a transition from in-plane to out-of-plane dipole orientation if their emission wavelength is longer than 750 nm. In addition, the exciton g-factor remains with average values of g = 8.52 ± 1.2 unchanged in the entire emission wavelength. These findings provide experimental support of the interlayer defect exciton model and highlight the importance of an underlying three-dimensional strain profile of deformed monolayer semiconductors, which is essential to optimize emitter-mode coupling in nanoplasmonics.

The effects of substitutional Fe-doping on magnetism in MoS2and WS2monolayers.

Doping of two-dimensional (2D) semiconductors has been intensively studied toward modulating their electrical, optical, and magnetic properties. While ferromagnetic 2D semiconductors hold promise for future spintronics and valleytronics, the origin of ferromagnetism in 2D materials remains unclear. Here, we show that substitutional Fe-doping of MoS2and WS2monolayers induce different magnetic properties. The Fe-doped monolayers are directly synthesized via chemical vapor deposition. In both cases, Fe substitutional doping is successfully achieved, as confirmed using scanning transmission electron microscopy. While both Fe:MoS2and Fe:WS2show PL quenching and n-type doping, Fe dopants in WS2monolayers are found to assume deep-level trap states, in contrast to the case of Fe:MoS2, where the states are found to be shallow. Usingµm- and mm-precision local NV-magnetometry and superconducting quantum interference device, we discover that, unlike MoS2monolayers, WS2monolayers do not show a magnetic phase transition to ferromagnetism upon Fe-doping. The absence of ferromagnetism in Fe:WS2is corroborated using density functional theory calculations.

Magnetic Proximity Coupling of Quantum Emitters in WSe2 to van der Waals Ferromagnets.

The realization of on-chip quantum networks requires tunable quantum states to encode information carriers on them. We show that Cr2Ge2Te6 (CGT) as a van der Waals ferromagnet can enable magnetic proximity coupling to site-controlled quantum emitters in WSe2, giving rise to ultrahigh exciton g factors up to 20 ± 1. By comparing the same site-controlled quantum emitter before and after ferromagnetic proximity coupling, we also demonstrate a technique to directly measure the resulting magnetic exchange field (MEF) strength. Experimentally determined values of MEF up to 1.2 ± 0.2 meV in the saturation regime approach the theoretical limit of 2.1 meV that was determined from density functional theory calculations of the CGT/WSe2 heterostructure. Our work extends the on-chip control of magneto-optical properties of excitons via van der Waals heterostructures to solid-state quantum emitters.

Carbon Nanotube Color Centers in Plasmonic Nanocavities: A Path to Photon Indistinguishability at Telecom Bands.

Indistinguishable single photon generation at telecom wavelengths from solid-state quantum emitters remains a significant challenge to scalable quantum information processing. Here we demonstrate efficient generation of "indistinguishable" single photons directly in the telecom O-band from aryl-functionalized carbon nanotubes by overcoming the emitter quantum decoherence with plasmonic nanocavities. With an unprecedented single-photon spontaneous emission time down to 10 ps (from initially 0.7 ns) generated in the coupling scheme, we show a two-photon interference visibility at 4 K reaching up to 0.79, even without applying post selection. Cavity-enhanced quantum yields up to 74% and Purcell factors up to 415 are achieved with single-photon purities up to 99%. Our results establish the capability to fabricate fiber-based photonic devices for quantum information technology with coherent properties that can enable quantum logic.

Quantum light signatures and nanosecond spectral diffusion from cavity-embedded carbon nanotubes.

Single-walled carbon nanotubes (SWCNTs) are considered for novel optoelectronic and quantum photonic devices, such as single photon sources, but methods must be developed to enhance the light extraction and spectral purity, while simultaneously preventing multiphoton emission as well as spectral diffusion and blinking in dielectric environments of a cavity. Here we demonstrate that utilization of nonpolar polystyrene as a cavity dielectric completely removes spectral diffusion and blinking in individual SWCNTs on the millisecond to multisecond time scale, despite the presence of surfactants. With these cavity-embedded SWCNT samples, providing a 50-fold enhanced exciton emission into the far field, we have been able to carry out photophysical studies for the first time with nanosecond timing resolution. We uncovered that fast spectral diffusion processes (1-3 ns) remain that make significant contributions to the spectral purity, thereby limiting the use of SWCNTs in quantum optical applications requiring indistinguishable photons. Measured quantum light signatures reveal pronounced photon antibunching (g(2)(0) = 0.15) accompanied by side-peak bunching signatures indicative of residual blinking on the submicrosecond time scale. The demonstrated enhanced single photon emission from cavity-embedded SWCNTs is promising for applications in quantum key distribution, while the demonstrated passivation effect of polystyrene with respect to the stability of the optical emission opens a novel pathway toward optoelectronic devices with enhanced performance.

Scaffold-Guided Crystallization of Oriented α-FAPbI3 Nanowire Arrays for Solar Cells.

Perovskite nanowire arrays with large surface areas for efficient charge transfer and continuous highly crystalline domains for efficient charge transport exhibit ideal morphologies for solar-cell active layers. Here, we introduce a room temperature two-step method to grow dense, vertical nanowire arrays of formamidinium lead iodide (FAPbI3). PbI2 nanocrystals embedded in the cylindrical nanopores of anodized titanium dioxide scaffolds were converted to FAPbI3 by immersion in a FAI solution for a period of 0.5-30 min. During immersion, FAPbI3 crystals grew vertically from the scaffold surface as nanowires with diameters and densities determined by the underlying scaffold. The presence of butylammonium cations during nanowire growth stabilized the active α polymorph of FAPbI3, precluding the need for a thermal annealing step. Solar cells comprising α-FAPbI3 nanowire arrays exhibited maximum solar conversion efficiencies of >14%. Short-circuit current densities of 22-23 mA cm-2 were achieved, on par with those recorded for the best-performing FAPbI3 solar cells reported to date. Such large photocurrents are attributed to the single-crystalline, low-defect nature of the nanowires and increased interfacial area for photogenerated charge transfer compared with thin films.

Localized States and resultant band bending in graphene antidot superlattices.

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically backgated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.

Optical control of edge chirality in graphene.

We performed optical annealing experiments at the edges of nanopatterned graphene to study the resultant edge reconstruction. The lithographic patterning direction was orthogonal to a zigzag edge. µ-Raman spectroscopy shows an increase in the polarization contrast of the G band as a function of annealing time. Furthermore, transport measurements reveal a 50% increase of the GNR energy gap after optical exposure, consistent with an increased percentage of armchair segments. These results suggest that edge chirality of graphene devices can be optically purified post electron beam lithography, thereby enabling the realization of chiral graphene nanoribbons and heterostructures.

Holographic control of motive shape in plasmonic nanogap arrays.

Here we demonstrate that 4-beam holographic lithography can be utilized to create plasmonic nanogaps that are 70 times smaller than the laser wavelength (488 nm). This was achieved by controlling phase, polarization, and laser beam intensity in order to tune the relative spacing of the two sublattices in the interference pattern of a compound-lattice in combination with the nonlinear resist response. Exemplarily, twin and triplet motive features were designed and patterned into polymer in a single exposure step and then transferred into gold nanogap arrays resulting in an average gap size of 22 nm and smallest features down to 7 nm. These results extend the utility of high-throughput, wafer-scale holographic lithography into the realm of nanoplasmonics.

Free Trions with Near-Unity Quantum Yield in Monolayer MoSe2.

Trions, quasiparticles composed of an electron-hole pair bound to a second electron and/or hole, are many-body states with potential applications in optoelectronics. Trions in monolayer transition metal dichalcogenide (TMD) semiconductors have attracted recent interest due to their valley/spin polarization, strong binding energy, and tunability through external gate control. However, low materials quality (i.e., high defect density) has hindered efforts to understand the intrinsic properties of trions. The low photoluminescence (PL) quantum yield (QY) and short lifetime of trions have prevented harnessing them in device applications. Here, we study the behavior of trions in a series of MoSe2 monolayers, with atomic defect density varying by over 2 orders of magnitude. The QY increases with decreasing defect density and approaches unity in the cleanest material. Simultaneous measurement of the PL lifetime yields both the intrinsic radiative lifetime and the defect-dependent nonradiative lifetime. The long lifetime of ∼230 ps of trions allows direct observation of their diffusion.

Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities.

Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB - ) centers, are emerging candidates for quantum sensing. However, the VB - defects suffer from low quantum efficiency and, as a result, exhibit weak photoluminescence. In this work, a scalable approach is demonstrated to dramatically enhance the VB - emission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few-layer hBN flakes positioned in between. Employing these plasmonic cavities, two orders of magnitude are extracted in photoluminescence enhancement associated with a corresponding twofold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and in realization of nanophotonic devices with spin defects in hexagonal boron nitride.

Quantum inductance and high frequency oscillators in graphene nanoribbons.

Here we investigate high frequency AC transport through narrow graphene nanoribbons with top-gate potentials that form a localized quantum dot. We show that as a consequence of the finite dwell time of an electron inside the quantum dot (QD), the QD behaves like a classical inductor at sufficiently high frequencies ω ≥ GHz. When the geometric capacitance of the top-gate and the quantum capacitance of the nanoribbon are accounted for, the admittance of the device behaves like a classical serial RLC circuit with resonant frequencies ω ∼ 100-900 GHz and Q-factors greater than 10(6). These results indicate that graphene nanoribbons can serve as all-electronic ultra-high frequency oscillators and filters, thereby extending the reach of high frequency electronics into new domains.

Antiferromagnetic proximity coupling between semiconductor quantum emitters in WSe2 and van der Waals ferromagnets.

van der Waals ferromagnets have gained significant interest due to their unique ability to provide magnetic response even at the level of a few monolayers. Particularly in combination with 2D semiconductors, such as the transition metal dichalcogenide WSe2, one can create heterostructures that feature unique magneto-optical response in the exciton emission through the magnetic proximity effect. Here we use 0D quantum emitters in WSe2 to probe for the ferromagnetic response in heterostructures with Fe3GT and Fe5GT ferromagnets through an all-optical read-out technique that does not require electrodes. The spectrally narrow spin-doublet of the WSe2 quantum emitters allowed to fully resolve the hysteretic magneto-response in the exciton emission, revealing the characteristic signature of both ferro- and antiferromagnetic proximity coupling that originates from the interplay among Fe3GT or Fe5GT, a thin surface oxide, and the spin doublets of the quantum emitters. Our work highlights the utility of 0D quantum emitters for probing interface magnetic dipoles in vdW heterostructures with high precision. The observed hysteretic magneto response in the exciton emission of quantum emitters adds further new degrees of freedom for spin and g-factor manipulation of quantum states.

Enabling room temperature ferromagnetism in monolayer MoS2 via in situ iron-doping.

Two-dimensional semiconductors, including transition metal dichalcogenides, are of interest in electronics and photonics but remain nonmagnetic in their intrinsic form. Previous efforts to form two-dimensional dilute magnetic semiconductors utilized extrinsic doping techniques or bulk crystal growth, detrimentally affecting uniformity, scalability, or Curie temperature. Here, we demonstrate an in situ substitutional doping of Fe atoms into MoS2 monolayers in the chemical vapor deposition growth. The iron atoms substitute molybdenum sites in MoS2 crystals, as confirmed by transmission electron microscopy and Raman signatures. We uncover an Fe-related spectral transition of Fe:MoS2 monolayers that appears at 2.28 eV above the pristine bandgap and displays pronounced ferromagnetic hysteresis. The microscopic origin is further corroborated by density functional theory calculations of dipole-allowed transitions in Fe:MoS2. Using spatially integrating magnetization measurements and spatially resolving nitrogen-vacancy center magnetometry, we show that Fe:MoS2 monolayers remain magnetized even at ambient conditions, manifesting ferromagnetism at room temperature.

Near-Unity Light Collection Efficiency from Quantum Emitters in Boron Nitride by Coupling to Metallo-Dielectric Antennas.

The bright and stable single-photon emission under room temperature conditions from color centers in hexagonal boron nitride (hBN) is considered as one of the most promising quantum light sources for quantum cryptography as well as spin-based qubits, similar to recent advances in nitrogen-vacancy centers in diamond. To this end, integration with cavity or waveguide modes is required to enable ideally lossless transduction of quantum light states. Here, we demonstrate a scheme to embed hBN quantum emitters into on-chip arrays of metallo-dielectric antennas that provides near unity light collection efficiencies with experimental values up to 98%, i.e. a 7-fold enhancement compared to bare quantum emitters. Room-temperature quantum light emission in the 700 nm band is characterized with single-photon emission rates into the first lens up to 44 MHz under continuous excitation and up to 10 MHz under 80 MHz pulsed excitation (0.13 photons per trigger pulse) into a narrow output cone (±15°) that facilitates fiber butt-coupling. We furthermore provide here a direct measurement of the quantum yield under pulsed excitation with values of 6-12% for hBN nanoflakes. Our demonstrated scheme could enable low loss spin-photon interfaces on a chip.

Remarkable long-term stability of nanoconfined metal-halide perovskite crystals against degradation and polymorph transitions.

Metal-halide perovskites are promising candidates to advance optoelectronic devices but are known to suffer from rapid material degradation. Here we demonstrate that nanoconfinement is an effective strategy for the long-term stabilization of metal-halide perovskite MAPbI3 crystals against humidity-induced degradation and temperature-induced polymorph transitions. Two-dimensional X-ray diffraction patterns of MAPbI3 films reveal an unprecedented air-stability of up to 594 days in non-chemically modified, non-passivated MAPbI3 films deposited on substrates imposing complete 2D confinement on the tens of nanometers length scale. Temperature-dependent X-ray diffraction analysis and optical spectroscopy further reveal the suppression of temperature-dependent phase transitions in nanoconfined MAPbI3 crystals. Most notably, the high-temperature cubic phase of MAPbI3, typically stable at temperatures above 327 K, remains present until a temperature of 170 K when the perovskite crystals are nanoconfined within the 100 nm diameter pores of anodized aluminum oxide templates. Photoluminescence mapping confirms that nanoconfined MAPbI3 crystals exhibit spatial uniformity on the tens of microns length scale, suggesting that nanoconfinement is an effective strategy for the formation of high-quality, stable MAPbI3 crystals across large areas.

Deterministic coupling of site-controlled quantum emitters in monolayer WSe2 to plasmonic nanocavities.

Solid-state single-quantum emitters are crucial resources for on-chip photonic quantum technologies and require efficient cavity-emitter coupling to realize quantum networks beyond the single-node level1,2. Monolayer WSe2, a transition metal dichalcogenide semiconductor, can host randomly located quantum emitters3-6, while nanobubbles7 as well as lithographically defined arrays of pillars in contact with the transition metal dichalcogenide act as spatially controlled stressors8,9. The induced strain can then create excitons at defined locations. This ability to create zero-dimensional (0D) excitons anywhere within a 2D material is promising for the development of scalable quantum technologies, but so far lacks mature cavity integration and suffers from low emitter quantum yields. Here we demonstrate a deterministic approach to achieve Purcell enhancement at lithographically defined locations using the sharp corners of a metal nanocube for both electric field enhancement and to deform a 2D material. This nanoplasmonic platform allows the study of the same quantum emitter before and after coupling. For a 3 × 4 array of quantum emitters we show Purcell factors of up to 551 (average of 181), single-photon emission rates of up to 42 MHz and a narrow exciton linewidth as low as 55 µeV. Furthermore, the use of flux-grown WSe2 increases the 0D exciton lifetimes to up to 14 ns and the cavity-enhanced quantum yields from an initial value of 1% to up to 65% (average 44%).

Suppression of exciton dephasing in sidewall-functionalized carbon nanotubes embedded into metallo-dielectric antennas.

Covalent functionalization of single-walled carbon nanotubes (SWCNTs) is a promising route to enhance the quantum yield of exciton emission and can lead to single-photon emission at room temperature. However, the spectral linewidth of the defect-related E11* emission remains rather broad. Here, we systematically investigate the low-temperature exciton emission of individual SWCNTs that have been dispersed with sodium-deoxycholate (DOC) and polyfluorene (PFO-BPy), are grown by laser vaporization (LV) or by CoMoCat techniques and are functionalized with oxygen as well as 3,5-dichlorobenzene groups. The E11 excitons in oxygen-functionalized SWCNTs remain rather broad with up to 10 meV linewidth while exciton emission from 3,5-dichlorobenzene functionalized SWCNTs is found to be about one order of magnitude narrower. In all cases, wrapping with PFO-BPy provides significantly better protection against pump induced dephasing compared to DOC. To further study the influence of exciton localization on pump-induced dephasing, we have embedded the functionalized SWCNTs into metallo-dielectric antenna cavities to maximize light collection. We show that 0D excitons attributed to the E11* emission of 3,5-dichlorobenzene quantum defects of LV-grown SWCNTs can display near resolution-limited linewidths down to 35 µeV. Interestingly, these 0D excitons give rise to a 3-fold suppressed pump-induced exciton dephasing compared to the E11 excitons in the same SWCNT. These findings provide a foundation to build a unified description of the emergence of novel optical behavior from the interplay of covalently introduced defects, dispersants, and exciton confinement in SWCNTs and might further lead to the realization of indistinguishable photons from carbon nanotubes.