Infiltrated 2D/3D Heterojunction with Tunable Electric Field Landscape for Robust Inverted Perovskite Solar Cells with over 24% Efficiency.

In inverted perovskite solar cells, conventional planar 2D/3D perovskite heterojunctions typically exhibit a type-II band alignment, where the electric field tends to drive the electron motion in the opposite direction to the direction of electron transfer. Here, a 2D/3D gradient heterojunction is developed by allowing the 2D perovskite to infiltrate the 3D perovskite surface along the grain boundaries using the interaction between the organic cation of the 2D perovskite and the pseudohalogen thiocyanate ion (SCN-), which has the ability to diffuse downward. The infiltrated 2D perovskite not only fills the gaps of grain boundaries with improved structural stability, but it also reconstructs the original landscape of the electric field toward the n-doped surface to enable more rapid electron transfer and weaken the adverse type-II band alignment effect. Since 2D perovskite seals the GBs, the nonvolatile SCN- can accumulate at the top and bottom dual interfaces, releasing residual stress and significantly inhibiting nonradiative recombination. The device exhibits an excellent efficiency of 24.76% (certified 24.29%) and long-term stability that is >90% of the original PCE value after 800 h of heating at 85 °C or in high humidity (≈65%).

Inhibiting Interfacial Diffusion in Heterojunction Perovskite Solar Cells by Replacing Low-Dimensional Perovskite with Uniformly Anchored Quaternized Polystyrene.

Surface heterojunction has been regarded as an effective method to improve the device efficiency of perovskite solar cells. Nevertheless, the durability of different heterojunction under thermal stress is rarely investigated and compared. In this work, benzylammonium chloride and benzyltrimethylammonium chloride are utilized to construct 3D/2D and 3D/1D heterojunctions, respectively. A quaternized polystyrene is synthesized to construct a three-dimensional perovskite/amorphous ionic polymer (3D/AIP) heterojunction. Due to the migration and volatility of organic cations, severe interfacial diffusion is found among 3D/2D and 3D/1D heterojunctions, in which the quaternary ammonium cations in the 1D structure are less volatile and mobile than the primary ammonium cations in the 2D structure. 3D/AIP heterojunction remains intact under thermal stress due to the strong ionic bond anchoring at the interface and the ultra-high molecular weight of AIP. Furthermore, the dipole layer formed by AIP can further reduce the voltage loss caused by nonradiative recombination at the interface by 0.088 V. Therefore, the devices based on the 3D/AIP heterojunction achieve a champion power conversion efficiency of 24.27% and maintain 90% of its initial efficiency after either thermal aging for 400 h or wet aging for 3000 h, showing a great promise for polymer/perovskite heterojunction towards real applications.

Organizing Uniform Phase Distribution in Methylammonium-Free 1.77 eV Wide-Bandgap Inverted Perovskite Solar Cells.

Disordered crystallization and poor phase stability of mixed halide perovskite films are still the main factors that compromise the performance of inverted wide bandgap (WBG; 1.77 eV) perovskite solar cells (PSCs). Great difficulties are evidenced due to the very different crystallization rates between I- and Br-based perovskite components through DMSO-alone assisted anti-solvent process. Here, a zwitterionic additive strategy is reported for finely regulating the crystal growth of Cs0.2 FA0.8 Pb(I0.6 Br0.4 )3 , thereby obtaining high-performance PSCs. The aminoethanesulfonic acid (AESA) is introduced to form hydrogen bonds and strong PbO bonds with perovskite precursors, realizing the complete coordination with both the organic (FAI) and inorganic (CsI, PbI2 , PbBr2 ) components, balancing their complexation effects, and realizing AESA-guided fast nucleation and retarded crystallization processes. This treatment substantially promotes homogeneous crystal growth of I- and Br-based perovskite components. Besides, this uniformly distributed AESA passivates the defects and inhibits the photo-induced halide segregation effectively. This strategy generates a record efficiency of 19.66%, with a Voc of 1.25 V and FF of 83.7% for an MA-free WBG p-i-n device at 1.77 eV. The unencapsulated devices display impressive humidity stability at 30 ± 5% RH for 1000 h and much improved continuous operation stability at MPP for 300 h.

Bottom-Up Templated and Oriented Crystallization for Inverted Triple-Cation Perovskite Solar Cells with Stabilized Nickel-Oxide Interface.

Inverted-structure perovskite solar cells (PSCs) are known for their superior device stability. However, based on nickel-oxide (NiOx ) substrate, disordered crystallization and bottom interface instability of perovskite film are still the main factors that compromise the power conversion efficiency (PCE) of PSCs. Here, 2D perovskite of thiomorpholine 1,1-dioxide lead iodide (Td2 PbI4 ) is introduced as a template to prepare 3D perovskite thin film with high crystal orientation and large grain size via a bottom-up growth method. By adding TdCl to the precursor solution, pre-crystallized 2D Td2 PbI4 seeds can accumulate at the bottom interface, lowering the barrier of nucleation, and templating the growth of 3D perovskite films with improved (100) orientation and reduced defects during crystallization. In addition, 2D Td2 PbI4 at the bottom interface also hinders the interfacial redox reaction and reduces the hole extraction barrier on the buried interface. Based on this, the Td-0.5 PSC achieves a PCE of 22.09% and an open-circuit voltage of 1.16 V. Moreover, Td-0.5 PSCs show extremely high stability, which retains 84% of its initial PCE after 500 h of continuous illumination under maximum power point operating conditions in N2 atmosphere. This work paves the way for performance improvement of inverted PSCs on NiOx substrate.

Minimizing Interfacial Energy Loss and Volatilization of Formamidinium via Polymer-Assisted D-A supramolecular Self-Assembly Interface for Inverted Perovskite Solar Cells with 25.78% Efficiency.

2D perovskite passivation strategies effectively reduce defect-assisted carrier nonradiative recombination losses on the perovskite surface. Nonetheless, severe energy losses are causing by carrier thermalization, interfacial nonradiative recombination, and conduction band offset still persist at heterojunction perovskite/PCBM interfaces, which limits further performance enhancement of inverted heterojunction PSCs. Here, 5,10,15,20-tetrakis(pentafluorophenyl)porphyrin (5FTPP) is introduced between 3D/2D perovskite heterojunction and PCBM. Compared to tetraphenylporphyrin without electron-withdrawing fluoro-substituents, 5FTPP can self-assemble with PCBM at interface into donor-acceptor (D-A) complex with stronger supramolecular interaction and lower energy transfer losses. This rapid energy transfer from donor (5FTPP) to acceptor (PCBM) within femtosecond scale is demonstrated to enlarge hot carrier extraction rates and ranges, reducing thermalization losses. Furthermore, the incorporation of polystyrene derivative (PD) reinforces D-A interaction by inhibiting self-π-π stacking of 5FTPP, while fine-tuning conduction band offset and suppressing interfacial nonradiative recombination via Schottky barrier, dipole, and n-doping. Notably, the multidentate anchoring of PD-5FTPP with FA+, Pb2+, and I- mitigates the adverse effects of FA+ volatilization during thermal stress. Ultimately, devices with PD-5FTPP achieve a power conversion efficiency of 25.78% (certified: 25.36%), maintaining over 90% of initial efficiency after 1000 h of continuous illumination at the maximum power point (65 °C) under ISOS-L-2 protocol.

Efficient Charge Transport in Inverted Perovskite Solar Cells via 2D/3D Ferroelectric Heterojunction.

While the 2D/3D heterojunction is an effective method to improve the power conversion efficiency (PCE) of perovskite solar cells (PSCs), carriers are often confined in the quantum wells (QWs) due to the unique structure of 2D perovskite, which makes the charge transport along the out-of-plane direction difficult. Here, a 2D/3D ferroelectric heterojunction formed by 4,4-difluoropiperidine hydrochloride (2FPD) in inverted PSCs is reported. The enriched 2D perovskite (2FPD)2PbI4 layer with n = 1 on the perovskite surface exhibits ferroelectric response and has oriented dipoles along the out-of-plane direction. The ferroelectricity of the oriented dipole layer facilitates the enhancement of the built-in electric field (1.06 V) and the delay of the cooling process of hot carriers, reflected in the high carrier temperature (above 1400 K) and the prolonged photobleach recovery time (139.85 fs, measured at bandgap), improving the out-of-plane conductivity. In addition, the alignment of energy levels is optimized and exciton binding energy (32.8 meV) is reduced by changing the dielectric environment of the surface. Finally, the 2FPD-treated PSCs achieve a PCE of 24.82% (certified: 24.38%) with the synergistic effect of ferroelectricity and defect passivation, while maintaining over 90% of their initial efficiency after 1000 h of maximum power point tracking.

In situ dipole formation to achieve high open-circuit voltage in inverted perovskite solar cells via fluorinated pseudohalide engineering.

Many studies have shown that the severe photoluminescence quantum yield (PLQY) loss at the interface between the perovskite and electron transport layer (ETL) is the main cause of voltage loss in inverted perovskite solar cells (p-i-n PSCs). However, currently there are no effective in situ passivation techniques to minimize this nonradiative recombination. Here, the fluorinated pseudohalide ionic liquid (FPH-IL) 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (EMIMTFSI) is introduced into the perovskite precursor formulation. EMIMTFSI can change the dielectric environment and energy-level arrangement of the perovskite by accumulating on the top surface and spontaneously forming dipoles. As a result, the excitonic binding energy (Eb) and nonradiative recombination loss are significantly reduced. At the same time, TFSI- reduces the formation energy of vacancy defects and stabilizes the perovskite phase by forming N-H⋯F hydrogen bonds between FA+ and the C-F bond in EMIMTFSI. Finally, the EMIMTFSI-modified p-i-n PSCs achieve an excellent efficiency of 24.81% with an impressive open-circuit voltage of 1.191 V for a 1.57 eV low-bandgap perovskite. In addition, the modified devices can maintain more than 95% PCE after continuous thermal aging at 85 °C for 500 h or illumination at the maximum power point for 800 h. This work provides a new idea for minimizing the non-radiative recombination losses in p-i-n PSCs.

Green-solvent-processed formamidinium-based perovskite solar cells with uniform grain growth and strengthened interfacial contact via a nanostructured tin oxide layer.

Green-solvent-processed perovskite solar cells (PSCs) have reached an efficiency of 20%, showing great promise in safe industrial production. However, the nucleation process in green-solvent-based deposition is rarely optimized, resulting in randomized crystallization and much lowered reported efficiencies. Herein, a nanostructured tin oxide nanorods (SnO2-NRs) substrate is utilized to prepare a high-quality formamidinium (FA)-based perovskite film processed from a green solvent of triethyl phosphate (TEP) with a low toxic antisolvent of dibutyl ether (DEE). Compared with SnO2 nanoparticles, the oriented SnO2-NRs can accelerate the formation of heterogeneous nucleation sites and retard the crystal growth process of the perovskite film, resulting in a high-quality perovskite film with uniform grain growth. Furthermore, a chlorine-terminated bifunctional supramolecule (Cl-BSM) is introduced to passivate the increasing interfacial defects due to the vast contact area in SnO2-NRs. Correspondingly, the substrate design of SnO2-NRs with Cl-BSM increases the power conversion efficiency (PCE) of green-solvent-processed PSCs to 22.42% with an open-circuit voltage improvement from 1.02 to 1.12 V, which can be attributed to the uniform grain growth and reduced carrier recombination at the SnO2-NRs/perovskite interface. More importantly, the photo and humidity stabilities of the unencapsulated device for up to 500 and 1000 hours are also achieved with negligible interfacial delamination after aging. This work provides a new perspective on the future industrial scale production of PSCs using environment-friendly solvents with compatible substrate design.

Resolving Mixed Intermediate Phases in Methylammonium-Free Sn-Pb Alloyed Perovskites for High-Performance Solar Cells.

The complete elimination of methylammonium (MA) cations in Sn-Pb composites can extend their light and thermal stabilities. Unfortunately, MA-free Sn-Pb alloyed perovskite thin films suffer from wrinkled surfaces and poor crystallization, due to the coexistence of mixed intermediate phases. Here, we report an additive strategy for finely regulating the impurities in the intermediate phase of Cs0.25FA0.75Pb0.6Sn0.4I3 and, thereby, obtaining high-performance solar cells. We introduced d-homoserine lactone hydrochloride (D-HLH) to form hydrogen bonds and strong Pb-O/Sn-O bonds with perovskite precursors, thereby weakening the incomplete complexation effect between polar aprotic solvents (e.g., DMSO) and organic (FAI) or inorganic (CsI, PbI2, and SnI2) components, and balancing their nucleation processes. This treatment completely transformed mixed intermediate phases into pure preformed perovskite nuclei prior to thermal annealing. Besides, this D-HLH substantially inhibited the oxidation of Sn2+ species. This strategy generated a record efficiency of 21.61%, with a Voc of 0.88 V for an MA-free Sn-Pb device, and an efficiency of 23.82% for its tandem device. The unencapsulated devices displayed impressive thermal stability at 85 °C for 300 h and much improved continuous operation stability at MPP for 120 h.

Low-Temperature Phase-Transition for Compositional-Pure α-FAPbI3 Solar Cells with Low Residual-Stress and High Crystal-Orientation.

Transition of δ-phase formamidinium lead triiodide (δ-FAPbI3 ) to pure α-phase FAPbI3 (α-FAPbI3 ) typically requires high processing temperature (150 °C), which often results in unavoidable residual stress. Besides, using methylammonium chloride (MACl) as additive in fabrication will cause MA residue in the film, compromising the compositional purity. Here, a stress-released and compositional-pure α-FAPbI3 thin-film is fabricated using 3-chloropropylammonium chloride (Cl-PACl) by two-step annealing. The 2D template of n = 2 can preferentially form in perovskite with the introduction of Cl-PACl at a temperature as low as 80 °C. Such a 2D template can guide the free components to form ordered α-FAPbI3 and promote the transition of the formed δ-FAPbI3 to α-FAPbI3 by reducing the phase transition energy. As a result, the obtained perovskite films via low-temperature phase-transition have a high degree of crystal orientation and reduced residual stress. More importantly, most of the Cl-PACl is volatilized during the subsequent high-temperature annealing process accompanied by the disintegration of the 2D templates. The residual trace of Cl-PA+ is mainly concentrated at the grain boundary near the perovskite surface layer, stabilizing α-FAPbI3 and passivating defects. Perovskite solar cell based on pure α-FAPbI3 achieves a power conversion efficiency of 23.03% with excellent phase stability and photo-stability.

Direct In Situ Conversion of Lead Iodide to a Highly Oriented and Crystallized Perovskite Thin Film via Sequential Deposition for 23.48% Efficient and Stable Photovoltaic Devices.

In the sequential deposition method of perovskite films, the crystallinity and microstructure of PbI2 are often sacrificed to solve the problem of an incomplete reaction between organic halide and lead halide. As a result, the crystal orientation of the perovskite film prepared by the sequential deposition method is generally worse than that of the perovskite film prepared by a one-step antisolvent method. Here, we preplaced formamidine formate (FAFa) on the buried interface to regulate the formation mechanism from PbI2 to perovskite. As shown by the XPS measurement of the perovskite buried interface, the HCOO- anion of FAFa first partially replaces I- to coordinate with Pb2+. With the subsequent annealing process, some HCOO- anions were released and migrated upward, which promoted the recrystallization of PbI2, obtaining a PbI2 film with enhanced crystallinity and orientation. Additionally, the lift-off process proves that the HCOO- anions suppress the anion vacancy defects enriched at the buried interface and promote charge transport because the HCOO- anions are small enough to adapt to the iodide vacancy. Grazing incidence wide-angle X-ray scattering and X-ray diffraction measurements show that the in situ conversion mechanism is responsible for the PbI2-to-perovskite process, resulting in the highly oriented perovskite film without increasing the residual PbI2 content in the perovskite film. As a result, our strategies enabled a champion power conversion efficiency of 23.48% with improved storage stability and photostability. This work provides a new strategy to improve the crystallinity of sequential deposition perovskites without destabilizing the device due to more PbI2 residues.