Observation of chiral and slow plasmons in twisted bilayer graphene.

Moiré superlattices have led to observations of exotic emergent electronic properties such as superconductivity and strong correlated states in small-rotation-angle twisted bilayer graphene (tBLG)1,2. Recently, these findings have inspired the search for new properties in moiré plasmons. Although plasmon propagation in the tBLG basal plane has been studied by near-field nano-imaging techniques3-7, the general electromagnetic character and properties of these plasmons remain elusive. Here we report the direct observation of two new plasmon modes in macroscopic tBLG with a highly ordered moiré superlattice. Using spiral structured nanoribbons of tBLG, we identify signatures of chiral plasmons that arise owing to the uncompensated Berry flux of the electron gas under optical pumping. The salient features of these chiral plasmons are shown through their dependence on optical pumping intensity and electron fillings, in conjunction with distinct resonance splitting and Faraday rotation coinciding with the spectral window of maximal Berry flux. Moreover, we also identify a slow plasmonic mode around 0.4 electronvolts, which stems from the interband transitions between the nested subbands in lattice-relaxed AB-stacked domains. This mode may open up opportunities for strong light-matter interactions within the highly sought after mid-wave infrared spectral window8. Our results unveil the new electromagnetic dynamics of small-angle tBLG and exemplify it as a unique quantum optical platform.

An antioxidant feedforward cycle coordinated by linker histone variant H1.2 and NRF2 that drives nonsmall cell lung cancer progression.

Nonsmall cell lung cancer (NSCLC) is highly malignant with limited treatment options, platinum-based chemotherapy is a standard treatment for NSCLC with resistance commonly seen. NSCLC cells exploit enhanced antioxidant defense system to counteract excessive reactive oxygen species (ROS), which contributes largely to tumor progression and resistance to chemotherapy, yet the mechanisms are not fully understood. Recent studies have suggested the involvement of histones in tumor progression and cellular antioxidant response; however, whether a major histone variant H1.2 (H1C) plays roles in the development of NSCLC remains unclear. Herein, we demonstrated that H1.2 was increasingly expressed in NSCLC tumors, and its expression was correlated with worse survival. When crossing the H1c knockout allele with a mouse NSCLC model (KrasLSL-G12D/+), H1.2 deletion suppressed NSCLC progression and enhanced oxidative stress and significantly decreased the levels of key antioxidant glutathione (GSH) and GCLC, the catalytic subunit of rate-limiting enzyme for GSH synthesis. Moreover, high H1.2 was correlated with the IC50 of multiple chemotherapeutic drugs and with worse prognosis in NSCLC patients receiving chemotherapy; H1.2-deficient NSCLC cells presented reduced survival and increased ROS levels upon cisplatin treatment, while ROS scavenger eliminated the survival inhibition. Mechanistically, H1.2 interacted with NRF2, a master regulator of antioxidative response; H1.2 enhanced the nuclear level and stability of NRF2 and, thus, promoted NRF2 binding to GCLC promoter and the consequent transcription; while NRF2 also transcriptionally up-regulated H1.2. Collectively, these results uncovered a tumor-driving role of H1.2 in NSCLC and indicate an "H1.2-NRF2" antioxidant feedforward cycle that promotes tumor progression and chemoresistance.

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect.

In this study, Wadsley B phase vanadium oxide (VO2(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO2(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K-1 at 40 °C, a peak specific detectivity of 6.02 × 109 Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO2(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.

Atomic-Scale Confinement and Negative Refraction of Plasmons by Twisted Bilayer Graphene.

Moiré superlattices provide in-plane quantum restriction for light-matter interactions in twisted bilayer graphene (tBLG), leading to the exotic photon-Moiré physics and potential applications for light manipulation. Recently, our experiment identified a highly confined slow surface plasmons polaritons (SPPs) mode in tBLG. Here, we demonstrate that the propagation of the slow SPPs mode in tBLG is spatially tailored and steered at deep subwavelengths. Analysis by the perturbation theory indicates that the coupling between the slow SPPs mode and the Moiré system is greatly strengthened, which regulates the wavefront at the atomic scale and makes tBLG serve as a universal optical metamaterial. Consequently, the negative refraction is achieved at the interface of monolayer graphene and tBLG, by which a metalens with a controllable focal length and an extremely high resolution up to 1/150 of wavelength is devised. Our work paves the way for constructing optical metamaterial at the atomic scale and develops future photon-Moiré interaction systems.

The Intracellular N-Terminal Domain of the Acid-Sensing Ion Channel 1a Participates in Channel Opening and Membrane Expression.

Acid-sensing ion channels (ASICs) are widely expressed in the nervous system. The intracellular C terminus of ASIC1a has many sites involved in regulating its expression and the opening mechanism, but the role of the intracellular N-terminal domain is poorly understood. Here, we explored the correlation of ASIC1a intracellular N terminus with membrane expression and gate opening. We modified the N-terminal structure of ASICs by deletion/truncation/mutation strategies and transfected the recombinant plasmids into CHO cells. Protein expression was analyzed with immunofluorescence, Western blots, and patch-clamp experiments. Deleting the entire N terminus decreased the membrane expression of channel proteins, and ion channel opening was lost. Deleting sections of the N terminus also decreased membrane expression and suggested that all areas were significant, with no single or group of amino acid residues playing a decisive role in regulating ASIC1a membrane expression. In terms of gate opening, five amino acid (AA) residues from AA 16 to AA 20 participated in gate opening, and isoleucine at AA 18 was the most important. The whole N terminus of ASICs participates in the membrane expression of ASIC1a, and five amino acid residues (AA 16-20) are involved in the gate opening mechanism. SIGNIFICANCE STATEMENT: The whole N terminus of ASICs participates in the membrane expression of ASIC1a, and five amino acid resi-dues (amino acid 16-20) are involved in the gate opening mechanism.

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors.

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to lattice mismatch. Here, a catalysis-free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO2 /Si substrates through edge-homoepitaxial growth. Parallel InSe nanowires are achieved further on SiO2 /Si substrates through controlling growth conditions. The underlying growth mechanism is attributed to a selenium self-driven vapor-liquid-solid process, which is distinct from the conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, it is demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A W-1 , ultrahigh detectivity of 1.57 × 1014 Jones, and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2 /Si substrates.

Investigation of a noise source and its impact on the photocurrent performance of long-wave-infrared InAs/GaSb type-II superlattice detectors.

Electrical noise significantly limits the detectivity of infrared photodiode detectors. In this paper, we investigated the dark current and noise spectra for long-wave-infrared InAs/GaSb type-II superlattice (T2SL) detectors to study the origin of noise under various work conditions. The temperature-dependent I-V characteristics reveal a turning point near 90 K, below which the dominant dark current mechanism changes from Shockley-Hall-Read generation current and diffusion current to shunt current and trap-assisted tunneling (TAT) current. The contribution of shunt and tunneling process to the total 1/f noise are analyzed by fitting the noise power spectral density at 77 K for detectors. It is found that the TAT current dominates the 1/f noise at the reverse bias stronger than -0.1 V, while shunt current exhibits a larger contribution at the reverse bias less than -0.1 V with the shunt noise coefficient αshunt of 5×10-8. Furthermore, the leakage routes related to the shunt process and their temperature dependence are illustrated by two-dimensional photocurrent mapping.

Graphene-Based Infrared Position-Sensitive Detector for Precise Measurements and High-Speed Trajectory Tracking.

Noncontact optical sensing plays an important role in various applications, for example, motion tracking, pilotless automobile, precision machining, and laser radars. A device with features of high resolution, fast response, and safe detection (operation wavelength at infrared (IR)) is highly desired in such applications. Here, a near IR position-sensitive detector constructed by graphene-Ge Schottky heterojunction has been demonstrated. The device shows high responsivity (minimum detectable power of ∼10 nW), excellent spatial resolution (<1 µm), fast response time (∼µs), and could operate in a wide spectral range (from visible to ∼1600 nm). Applications of precise angle (∼5 × 10-6 degree) and vibration frequency (up to 10 kHz) measurements, as well as the trajectory tracking of a high-speed infrared target (∼100 km/h), have been realized based on this device. This work therefore provides a promising route for a high-performance noncontact IR optical sensing system.

Plasmon Excited Ultrahot Carriers and Negative Differential Photoresponse in a Vertical Graphene van der Waals Heterostructure.

Photogenerated nonequilibrium hot carriers play a key role in graphene's intriguing optoelectronic properties. Compared to conventional photoexcitation, plasmon excitation can be engineered to enhance and control the generation and dynamics of hot carriers. Here, we report an unusual negative differential photoresponse of plasmon-induced "ultrahot" electrons in a graphene-boron nitride-graphene tunneling junction. We demonstrate nanocrescent gold plasmonic nanostructures that substantially enhance the absorption of long-wavelength photons whose energy is greatly below the tunneling barrier and significantly boost the electron thermalization in graphene. We further analyze the generation and transfer of ultrahot electrons under different bias and power conditions. We find that the competition among thermionic emission, the carrier-cooling effect, and the field effect results in a hitherto unusual negative differential photoresponse in the photocurrent-bias plot. Our results not only exemplify a promising platform for detecting low-energy photons, enhancing the photoresponse, and reducing the dark current but also reveal the critically coupled pathways for harvesting ultrahot carriers.

Electrically tunable optical properties of few-layer black arsenic phosphorus.

Black arsenic phosphorus (b-AsP) is a promising two-dimensional material for various optoelectronic applications, bridging the wavelength gap between two-dimensional molybdenum disulfide and graphene. In particular, it has intriguing potential in photodetectors and great advantages in the mid-infrared field. However, its optoelectronic modulation has yet to be elucidated, which requires a fundamental understanding of its field-effect optical modulation. Here, we report the measurements of the lower-energy infrared anisotropic optical response of thin b-AsP under different electrical gating. We reveal that in addition to band edge absorption, amplitude modulation of sub-band absorption up to ten percent is also obtained in reflection extinction. These in-gap absorptions are attributed to spin-orbital coupling and free carrier absorption. Our results suggest the important potential for use of b-AsP in mid-infrared optoelectronic modulator applications.

Improving the Performance of Graphene Phototransistors Using a Heterostructure as the Light-Absorbing Layer.

Interfacing light-sensitive semiconductors with graphene can afford high-gain phototransistors by the multiplication effect of carriers in the semiconductor layer. So far, most devices consist of one semiconductor light-absorbing layer, where the lack of internal built-in field can strongly reduce the quantum efficiency and bandwidth. Here, we demonstrate a much improved graphene phototransistor performances using an epitaxial organic heterostructure composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) and pentacene as the light-absorbing layer. Compared with single light-absorbing material, the responsivity and response time can be simultaneously improved by 1 and 2 orders of magnitude over a broad band of 400-700 nm, under otherwise the same experimental conditions. As a result, the external quantum efficiency increases by over 800 times. Furthermore, the response time of the heterostructured phototransistor is highly gate-tunable down to sub-30 µs, which is among the fastest in the sensitized graphene phototransistors interfacing with electrically passive light-absorbing semiconductors. We show that the improvement is dominated by the efficient electron-hole pair dissociation due to interfacial built-in field rather than bulk absorption. The structure demonstrated here can be extended to many other organic and inorganic semiconductors, which opens new possibilities for high-performance graphene-based optoelectronics.

Demonstration of digital fronthaul over self-seeded WDM-PON in commercial LTE environment.

CPRI between BBU and RRU equipment is carried by self-seeded WDM-PON prototype system within commercial LTE end-to-end environment. Delay and jitter meets CPRI requirements while services demonstrated show the same performance as bare fiber.

Black phosphorus radio-frequency transistors.

Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin films offer a moderate bandgap of around 0.3 eV and high carrier mobility, which lead to transistors with decent on-off ratios and high on-state current densities. Here, we demonstrate the gigahertz frequency operation of BP field-effect transistors for the first time. The BP transistors demonstrated here show respectable current saturation with an on-off ratio that exceeds 2 × 10(3). We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cutoff frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus can be considered as a promising candidate for the future high performance thin film electronics technology for operation in the multi-GHz frequency range and beyond.

Optical Coupling in Atomic Waveguide for Vertically Integrated Photonics.

Integrated 2-dimensional (2D) photonic devices such as monolayer waveguide has generated exceptional interest because of their ultimate thinness. In particular, they potentially permit stereo photonic architecture through bond-free van der Waals integration. However, little is known about the coupling and controlling of the single-atom guided wave to its photonic environment, which governs the design and application of integrated system. Here, we report the optical coupling of atomically guided waves to other photonic modes. We directly probe the mode beating between evanescent waves in a monolayer 2D waveguide and a silicon photonic waveguide, which constitutes a vertically integrated interferometer. The mode-coupling measures the dispersion relation of the guided wave inside the atomic waveguide and unveils it strongly modifies matter's electronic states, manifesting by the formation of a propagating polariton. We also demonstrated light modulating and spectral detecting in this compact nonplanar interferometer. These findings provide a generalizable and versatile platform toward monolithic 3-dimensional integrated photonics.

Risk of COVID-19 infection and seizure exacerbation among patients with epilepsy during the peak of Omicron wave.

OBJECTIVES: Existing data regarding the risk of COVID-19 infection and its effects on seizure control in patients with epilepsy (PWE) are inconclusive. Our research aims to investigate the PWE who are susceptible to COVID-19 and what factors contribute to seizure exacerbation. METHODS: From Dec 28, 2022 to Feb 19, 2023, a cross-sectional questionnaire survey among adult PWE was conducted. The demographics, epilepsy-related information, COVID-19-related variables, and seizure outcomes after COVID-19 infection were collected. Multivariate logistic analyses were performed to determine the risk factors associated with COVID-19 infection and exacerbated seizures. RESULTS: Of 1557 PWE, 829 (53.2%) were infected with COVID-19 and 136 (16.4%) developed seizure exacerbation after COVID-19 infection. Overweight/obesity (OR 1.372, 95% CI 1.075-1.753, p = 0.011), immunocompromised (OR 3.301, 95% CI 1.093-9.974, p = 0.031), active epilepsy (OR 1.700, 95% CI 1.378-2.097, p < 0.001), and antiseizure medication (ASM) polytherapy (OR 1.314, 95% CI 1.065-1.621, p = 0.011) were associated with COVID-19 infection. Active epilepsy (OR 4.696, 95% CI 2.568-8.586, p < 0.001) and fever-associated seizures (OR 4.298, 95%CI 2.659-6.946, p < 0.001) were associated with seizure exacerbation. SIGNIFICANCE: PWE with overweight/obesity, immunocompromised, active epilepsy, and ASM polytherapy were at higher risk of COVID-19 infection. Once infected with COVID-19, seizures were exacerbated in PWE with active epilepsy and fever-associated seizures. PLAIN LANGUAGE SUMMARY: Patients with epilepsy (PWE) do not appear to be more susceptible to COVID-19 infection than general population. Once infected with COVID-19, 16.4% of PWE had seizure exacerbation. The PWE who have experienced seizures within the past 12 months before infection tend to contract COVID-19 more often, and are more likely to experience seizure exacerbations following COVID-19 infection.

2D MOF based-heterostructure with hierarchical architecture as antibacterial wound dressing.

Bacterial infections pose a huge threat to human health due to the inevitable emergency of drug resistance. Metal-organic frameworks (MOFs) consisting of metal ions and organic linkers, as emerging efficient antibacterial material, have the merits of structural flexibility and adjustable physicochemical property. With assistance of photosensitive agents as organic linkers, MOFs have great potential in antibacterial application through photocatalytic therapy by the generation of reactive oxygen species (ROS). However, the limited light use efficiency and short lifespan of ROS are two obstacles for their applications. Inspired by the semiconductor heterostructure in photocatalysis, we rationally design and precisely synthesize MOFs based heterostructures, in which the TiO2 nanoclusters are filled into the pores of Cu-TCPP nanosheets (i.e. TiO2 NCs@Cu-TCPP HSs). And the composite materials possess three-dimensional (3D) hierarchical architectures, which have advantages of large surface area, excellent light-absorbing ability and photocatalytic efficiency. Significantly, this novel material displays >99.99 % antibacterial efficiency against E. coli and S. aureus within 30 min and preserves the excellent antibacterial ability during reusing three times, which is superior to recently reported photocatalystic-based antibacterial materials. Our study provides new insights into the energy band engineering for enhanced antibacterial performance, paving a way for designing advanced clinical wound dressings.

Impinge Weyl advantages on light.

Weyl semimetals are emerging topological materials with intriguing physical properties. Now this exotic matter may lead to novel photonic and optoelectronic applications.

Smartphone-assisted colorimetric detection of Salmonella typhimurium based on the catalytic reduction of 4-nitrophenol by ß-cyclodextrin-capped gold nanoparticles.

Salmonella typhimurium (S. typhimurium) is one of the most common pathogens in the environment, such as in drinking water and soil. Herein, an on-site detection method was developed by combining silver-coated magnetic nanoparticles (Fe3O4@Ag NPs) with the ß-cyclodextrin-capped gold nanoparticles (ß-CD-Au NPs) to achieve sensitive detection of S. typhimurium. After they formed a sandwich structure in the presence of S. typhimurium, the 4-nitrophenol was reduced to 4-aminophenol based on the nitro-reductase activity of ß-CD-Au NPs. The naked eyes were able to observe the color change from yellow to colorless. Under optimal conditions, the detection range of S. typhimurium was 10-107 CFU mL-1, and the limit of detection (LOD) was 10 CFU mL-1. The total detection time was 90 min, showing satisfactory performance in real samples. We combined a smartphone app with the colorimetric method, making it possible to semi-quantitatively detect S. typhimurium by analyzing the grey value. In conclusion, this assay detects S. typhimurium in environmental samples, offering an accurate and sensitive detection method without sophisticated equipment.

Fast, Multi-Bit, and Vis-Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2 /2D-Perovskite Van der Waals Heterojunction.

Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long-term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios. However, realizing NVOM with vis-infrared broadband response is still challenging. Herein, the room temperature vis-infrared broadband NVOM based on few-layer MoS2 /2D Ruddlesden-Popper perovskite (2D-RPP) van der Waals heterojunction is realized. It is found that the 2D-RPP converts the initial n-type MoS2 into p-type and facilitates hole transfer between them. Furthermore, the 2D-RPP rich in interband states serves as an effective electron trapping layer as well as broadband photoresponsive layer. As a result, the dielectric-free MoS2 /2D-RPP heterojunction enables the charge to transfer quickly under external field, which enables a large memory window (104 V), fast write speed of 20 µs, and optical programmable characteristics from visible light (405 nm) to telecommunication wavelengths (i.e., 1550 nm) at room temperature. Trapezoidal optical programming can produce up to 100 recognizable states (>6 bits), with operating energy as low as 5.1 pJ per optical program. These results provide a route to realize fast, low power, multi-bit optoelectronic memory from visible to the infrared wavelength.

Flower-like Thiourea-Formaldehyde Resin Microspheres for the Adsorption of Silver Ions.

Around a quarter of annual worldwide silver consumption comes from recycling. It remains a primary target for researchers to increase the silver ion adsorption capacity of the chelate resin. Herein, a series of flower-like thiourea-formaldehyde microspheres (FTFM) possessing diameters of 15-20 µm were prepared via a one-step reaction under acidic conditions, and the effects of the monomer molar ratio and reaction time on the micro-flower morphology, specific surface area, and silver ion adsorption performance were explored. The nanoflower-like microstructure showed the maximum specific surface area 18.98 ± 0.949 m2/g, which was 55.8 times higher than that of the solid microsphere control. As a result, the maximum silver ion adsorption capacity was 7.95 ± 0.396 mmol/g, which was 10.9 times higher than that of the control. Kinetic studies showed that the equilibrium adsorption amount of FT1F4M was 12.61 ± 0.016 mmol/g, which was 11.6 times higher than that of the control. Additionally, the isotherm study of the adsorption process was performed, and the maximum adsorption capacity of FT1F4M was 18.17 ± 1.28 mmol/g, which was 13.8 times that of the control according to the Langmuir adsorption model. Its high absorption efficiency, convenient preparation strategy, and low cost recommend FTFM bright for further use in industrial applications.