ABSTRACT
The etch characteristics of Si and TiO2 nanostructures for optical devices were investigated using pulse biased inductively coupled plasmas (ICP) with SF6/C4F8/Ar and BCl3/Ar, respectively, and the results were compared with those etched using continuous wave (CW) biased ICP. By using pulse biasing compared to CW biasing in the etching of the line/pillar nanostructures with various aspect ratios, there was a reduction of the aspect ratio dependent etching (ARDE) and therefore, uniform etch depths for nanostructures with different pattern widths, as well as the improvement of the etch profiles without any notching, were obtained not only for silicon nanostructures but also for TiO2 nanostructures. The investigation has determined that the improvement of etch profiles and reduced ARDE effect when using pulse biasing are related to the decreased surface charging caused by neutralization of the surface and the improved radical adsorption (or etch byproduct removal) on the etched surfaces during the pulse-off period for pulse biasing compared to CW biasing.
ABSTRACT
We demonstrate plasma-treated Ag nanowires (NWs) as flexible transparent electrode materials with enhanced long-term stability against oxidation even in a high humidity environment (80% humidity, 20 °C). Through a simple fluorocarbon (C4F8 or C4F6) plasma treatment method, a C x F y protective polymer was sufficiently cross-linked and attached on the surface of the AgNWs strongly and uniformly. Even though C4F8 and C4F6 activate differently on the AgNW surface due to the different dissociated radicals formed in the plasma, it was found that the C x F y protective polymers obtained by both chemicals work similarly as a protective layer for transparent conductive electrodes; a nearly constant sheet resistance ratio (R s/R o) of 1.6 was found for AgNWs treated with C4F8 and C4F6 plasmas, while the AgNWs without the plasma treatment exhibited a ratio of 176.2 after 36 days in a harsh environment. It is believed that the fluorocarbon plasma treatment can be used as a key method for ensuring long-term oxidation stability in numerous electronic applications including flexible solar cells utilizing various types of metallic nanowires.
ABSTRACT
We investigated the effects of plasma treatment on the sheet resistance of thin films spray-coated with graphene flakes on polyethylene terephthalate (PET) substrates. Thin films coated with graphene flakes show high sheet resistance due to defects within graphene edges, domains, and residual oxygen content. Cl2 plasma treatment led to decreased sheet resistance when treatment time was increased, but when thin films were treated for too long the sheet resistance increased again. Optimum treatment time was related to film thickness. The reduction of sheet resistance may be explained by the donation of holes due to forming pi-type covalent bonds of Cl with carbon atoms on graphene surfaces, or by C--Cl bonding at the sites of graphene defects. However, due to radiation damage caused by plasma treatment, sheet resistance increased with increased treatment time. We found that the sheet resistance of PET film coated with graphene flakes could be decreased by 50% under optimum conditions.
ABSTRACT
The etch characteristics of magnetic tunneling junction (MTJ) related materials such as CoFeB, MgO, FePt, Ru, and W as hard mask have been investigated as functions of rf pulse biasing, substrate heating, and CH4/N2O gas combination in an inductively coupled plasma system. When CH4/N2O gas ratio was varied, at CH4/N2O gas ratio of 2:1, not only the highest etch rates but also the highest etch selectivity over W could be obtained. By increasing the substrate temperature, the linear increase of both the etch rates of MTJ materials and the etch selectivity over W could be obtained. The use of the rf pulse biasing improved the etch selectivity of the MTJ materials over hard mask such as W further. The surface roughness and residual thickness remaining on the etched surface of the CoFeB were also decreased by using rf pulse biasing and with the decrease of rf duty percentage. The improvement of etch characteristics by substrate heating and rf pulse biasing was possibly related to the formation of more stable and volatile etch compounds and the removal of chemically reacted compounds more easily on the etched CoFeB surface. Highly selective etching of MTJ materials over the hard mask could be obtained by using the rf pulse biasing of 30% of duty ratio and by increasing the substrate temperature to 200 degrees C in the CH4/N2O (2:1) plasmas.
ABSTRACT
The magnetic tunnel junction (MTJ)-related materials such as CoFeB, CoPt, MgO, and Ru, and W were etched using CH3OH in a pulse-biased inductively coupled plasma system and the effect of bias pulsing (100% 30% duty percentage) on the etch characteristics of the MTJ-related materials was investigated at the substrate temperature of 200 degrees C. The etch selectivity of MTJ-related materials over W was improved by using pulse-biasing possibly due to the formation of more stable and volatile etch products during the pulse-off time and the removal of the compounds more easily on the etched CoFeB surface during the pulse-on time. X-ray photoelectron spectroscopy also showed that the use of lower duty percentage decreases the residue thickness remaining on the etched MTJ materials indirectly indicated the higher volatility of the etch products by the bias pulsing. The etching of nano-patterned CoFeB masked with W also showed more anisotropic etch profile by pulse-biasing probably due to the increased the etch selectivity of CoFeB over W and the decreased redeposition of etch products on the sidewall of the CoFeB features. The most anisotropic CoFeB etch profiles could be observed by using CH3OH gas in the pulse biasing of 30% duty ratio.