Unveiling Efficient Acousto-Optic Modulation in Silicon Photonic Devices via Lithium Niobate Using Transfer Printing.

Piezo-optomechanics presents a promising route to convert microwave signals to the optical domain, implementing processing tasks that are challenging using conventional electronics. The surge of integrated photonics facilitates the exploitation of localized light-sound interactions toward new technological paradigms. However, efficient acousto-optic interaction has yet to be fully exploited in silicon due to the absence of piezoelectricity, despite its maturity in photonic integrated circuits. Here, we introduce a distinctive acousto-optic scheme to supplement silicon photonic devices through heterogeneous integration with lithium niobate (LN). Utilizing LN as an efficient acoustic pump to harness the inherently exceptional photoelasticity in silicon, we demonstrate efficient microwave-to-acoustic transduction, ultimately achieving a modulation figure-of-merit of VπL ∼ 0.496 V·cm. This efficient modulation scheme is further extended to implement non-reciprocal intermodal modulation. The proposed hybrid integration route opens new possibilities for tailoring photon-phonon interactions in silicon, consolidating acousto-optic technology in multifunctional integrated photonics.

Acoustic Resonance Tuning by High-Order Lorentzian Mixing.

Nanoscale mechanical resonators have attracted a great deal of attention for signal processing, sensors, and quantum applications. Recent progress in ultrahigh-Q acoustic cavities in nanostructures allows strong interactions with various physical systems and advanced functional devices. Those acoustic cavities are highly sensitive to external perturbations, and it is hard to control those resonance properties since those responses are determined by the geometry and material. In this paper, we demonstrate a novel acoustic resonance tuning method by mixing high-order Lorentzian responses in an optomechanical system. Using weakly coupled phononic-crystal acoustic cavities, we achieve coherent mixing of second- and third-order Lorentzian responses, which is capable of the fine-tunability of the bandwidth and peak frequency of the resonance with a tuning range comparable to the acoustic dissipation rate of the device. This novel resonance tuning method can be widely applied to Lorentzian-response systems and optomechanics, especially active compensation for environmental fluctuation and fabrication errors.

Artificial Intelligence-Enhanced Waveguide "Photonic Nose"- Augmented Sensing Platform for VOC Gases in Mid-Infrared.

On-chip nanophotonic waveguide sensor is a promising solution for miniaturization and label-free detection of gas mixtures utilizing the absorption fingerprints in the mid-infrared (MIR) region. However, the quantitative detection and analysis of organic gas mixtures is still challenging and less reported due to the overlapping of the absorption spectrum. Here,an Artificial-Intelligence (AI) assisted waveguide "Photonic nose" is presented as an augmented sensing platform for gas mixture analysis in MIR. With the subwavelength grating cladding supported waveguide design and the help of machine learning algorithms, the MIR absorption spectrum of the binary organic gas mixture is distinguished from arbitrary mixing ratio and decomposed to the single-component spectra for concentration prediction. As a result, the classification of 93.57% for 19 mixing ratios is realized. In addition, the gas mixture spectrum decomposition and concentration prediction show an average root-mean-square error of 2.44 vol%. The work proves the potential for broader sensing and analytical capabilities of the MIR waveguide platform for multiple organic gas components toward MIR on-chip spectroscopy.

Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals.

Room temperature lateral p+-i-n+light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+and n+contact regions made it possible to reduce the impurity activation temperature from 800 °Ð¡-1100 °Ð¡ to 600 °Ð¡, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55µm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55µm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

Optical coupling of individual air-suspended carbon nanotubes to silicon microcavities.

Carbon nanotubes are a telecom band emitter compatible with silicon photonics, and when coupled to microcavities, they present opportunities for exploiting quantum electrodynamical effects. Microdisk resonators demonstrate the feasibility of integration into the silicon platform. Efficient coupling is achieved using photonic crystal air-mode nanobeam cavities. The molecular screening effect on nanotube emission allows for spectral tuning of the coupling. The Purcell effect of the coupled cavity-exciton system reveals near-unity radiative quantum efficiencies of the excitons in carbon nanotubes.

Correction of 2π Phase Jumps for Silicon Photonic Sensors Based on Mach Zehnder Interferometers with Application in Gas and Biosensing.

Silicon photonic sensors based on Mach Zehnder Interferometers (MZIs) have applications spanning from biological and olfactory sensors to temperature and ultrasound sensors. Although a coherent detection scheme can solve the issues of sensitivity fading and ambiguity in phase direction, the measured phase remains 2π periodic. This implies that the acquisition frequency should ensure a phase shift lower than π between each measurement point to prevent 2π phase jumps. Here, we describe and experimentally characterize two methods based on reference MZIs with lower sensitivities to alleviate this drawback. These solutions improve the measurement robustness and allow the lowering of the acquisition frequency. The first method is based on the phase derivative sign comparison. When a discrepancy is detected, the reference MZI is used to choose whether 2π should be added or removed from the nominal MZI. It can correct 2π phase jumps regardless of the sensitivity ratio, so that a single reference MZI can be used to correct multiple nominal MZIs. This first method relaxes the acquisition frequency requirement by a factor of almost two. However, it cannot correct phase jumps of 4π, 6π or higher between two measurement points. The second method is based on the comparison between the measured phase from the nominal MZI and the phase expected from the reference MZI. It can correct multiple 2π phase jumps but requires at least one reference MZI per biofunctionalization. It will also constrain the corrected phase to lie in a limited interval of [-π, +π] around the expected value, and might fail to correct phase shifts above a few tens of radians depending on the disparity of the nominal sensors responses. Nonetheless, for phase shift lower than typically 20 radians, this method allows the lowering of the acquisition frequency almost arbitrarily.

Ultrasensitive Silicon Photonic Refractive Index Sensor Based on Hybrid Double Slot Subwavelength Grating Microring Resonator.

Silicon photonic-based refractive index sensors are of great value in the detection of gases, biological and chemical substances. Among them, microring resonators are the most promising due to their compact size and narrow Lorentzian-shaped spectrum. The electric field in a subwavelength grating waveguide (SWG) is essentially confined in the low-refractive index dielectric, favoring enhanced analyte-photon interactions, which represents higher sensitivity. However, it is very challenging to further significantly improve the sensitivity of SWG ring resonator refractive index sensors. Here, a hybrid waveguide blocks double slot subwavelength grating microring resonator (HDSSWG-MRR) refractive index sensor operating in a water refractive index environment is proposed. By designing a new waveguide structure, a sensitivity of up to 1005 nm/RIU has been achieved, which is 182 nm/RIU higher than the currently highest sensitivity silicon photonic micro ring refractive index sensor. Meanwhile, utilizing a unique waveguide structure, a Q of 22,429 was achieved and a low limit of detection of 6.86 × 10-5 RIU was calculated.

Fully-integrated photonic tensor core for image convolutions.

Convolutions are one of the most critical signal and image processing operations. From spectral analysis to computer vision, convolutional filtering is often related to spatial information processing involving neighbourhood operations. As convolution operations are based around the product of two functions, vectors or matrices, dot products play a key role in the performance of such operations; for example, advanced image processing techniques require fast, dense matrix multiplications that typically take more than 90% of the computational capacity dedicated to solving convolutional neural networks. Silicon photonics has been demonstrated to be an ideal candidate to accelerate information processing involving parallel matrix multiplications. In this work, we experimentally demonstrate a multiwavelength approach with fully integrated modulators, tunable filters as microring resonator weight banks, and a balanced detector to perform matrix multiplications for image convolution operations. We develop a scattering matrix model that matches the experiment to simulate large-scale versions of these photonic systems with which we predict performance and physical constraints, including inter-channel cross-talk and bit resolution.

An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components.

In this work, we demonstrate a compact toolkit of inverse-designed, topologically optimized silicon photonic devices that are arranged in a "plug-and-play" fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2 × 2 3-dB splitter/combiner, a 2 × 2 waveguide crossover, and a 2 × 2 all-forward add-drop resonator. The resonator can become a 2 × 2 electro-optical crossbar switch by means of the thermo-optical effect, phase-change cladding, or free-carrier injection. For each of the ten circuits demonstrated in this work, the toolkit of photonic devices enables the compact circuit to achieve low insertion loss and low crosstalk. By adopting the sophisticated inverse-design approach, the design structure, shape, and sizing of each individual device can be made more flexible to better suit the architecture of the greater circuit. For a compact architecture, we present a unified, parallel waveguide circuit framework into which the devices are designed to fit seamlessly, thus enabling low-complexity circuit design.

Silicon Fresnel Zone Plate Metalens with Subwavelength Gratings.

Metalenses are planar optical components that have demonstrated immense potential for integrated optics. In particular, they are capable of high-efficiency subwavelength focusing without the bulkiness of traditional lenses. Dielectric metalenses operating in the C-band typically employ relatively tall, amorphous silicon structures arranged in a periodic array. Phase control spanning from 0 to 2π is accessed by varying the geometry of these scattering structures. The full 2π phase range is necessary to impose a hyperbolic focusing phase profile, but this is difficult to achieve without custom fabrication practices. In this work, we propose a binary phase Fresnel zone plate metalens designed for the standard 500 nm silicon-on-insulator platform. Our design uses subwavelength gratings with trapezoidal segmentation to form concentric rings. The effective index of the grating is set with the duty cycle using a single full-etch step to form the binary phase profile of the zone plate. The metalens design can be easily tuned to achieve longer focal lengths at different wavelengths. It offers a simple platform for high-throughput wavelength-scale focusing elements in free-space optics, including for microscopy and medical imaging.

"GeSn Rule-23"-The Performance Limit of GeSn Infrared Photodiodes.

Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal-oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications. The performance of GeSn PDs is highly dependent on the Sn composition and operation temperature. Here, we develop theoretical models to establish a simple rule of thumb, namely "GeSn-rule 23", to describe GeSn PDs' dark current density in terms of operation temperature, cutoff wavelength, and Sn composition. In addition, analysis of GeSn PDs' performance shows that the responsivity, detectivity, and bandwidth are highly dependent on operation temperature. This rule provides a simple and convenient indicator for device developers to estimate the device performance at various conditions for practical applications.

Design of a Completely Vertical, Polarization-Independent Two-Dimensional Grating Coupler with High Coupling Efficiency.

An efficient optical coupler to transfer the signal between an optical fiber and a silicon waveguide is essential for realizing the applications of silicon photonic integrated circuits such as optical communication and optical sensing. In this paper, we numerically demonstrate a two-dimensional grating coupler based on a silicon-on-insulator platform to obtain completely vertical and polarization-independent couplings, which potentially ease the difficulty of packaging and measurement of photonic integrated circuits. To mitigate the coupling loss induced by the second-order diffraction, two corner mirrors are respectively placed at the two orthogonal ends of the two-dimensional grating coupler to create appropriate interference conditions. Partial single-etch is assumed to form an asymmetric grating to obtain high directionalities without a bottom mirror. The two-dimensional grating coupler is optimized and verified with finite-difference time-domain simulations, achieving a high coupling efficiency of -1.53 dB and a low polarization-dependent loss of 0.015 dB when coupling to a standard single-mode fiber at approximately 1310 nm wavelength.

Wideband and Channel Switchable Mode Division Multiplexing (MDM) Optical Power Divider Supporting 7.682 Tbit/s for On-Chip Optical Interconnects.

Silicon photonics (SiPh) are considered a promising technology for increasing interconnect speed and capacity while decreasing power consumption. Mode division multiplexing (MDM) enables signals to be transmitted in different orthogonal modes in a single waveguide core. Wideband MDM components simultaneously supporting wavelength division multiplexing (WDM) and orthogonal frequency-division multiplexing (OFDM) can significantly increase the transmission capacity for optical interconnects. In this work, we propose, fabricate and demonstrate a wideband and channel switchable MDM optical power divider on an SOI platform, supporting single, dual and triple modes. The switchable MDM power divider consists of two parts. The first part is a cascaded Mach-Zehnder interferometer (MZI) for switching the data from their original TE0, TE1 and TE2 modes to different modes among themselves. After the target modes are identified, mode up-conversion and Y-branch are utilized in the second part for the MDM power division. Here, 48 WDM wavelength channels carrying OFDM data are successfully switched and power divided. An aggregated capacity of 7.682 Tbit/s is achieved, satisfying the pre-forward error correction (pre-FEC) threshold (bit-error-rate, BER = 3.8 × 10-3). Although up to three MDM modes are presented in the proof-of-concept demonstration here, the proposed scheme can be scaled to higher order modes operation.

Design Consideration, Numerical and Experimental Analyses of Mode-Division-Multiplexed (MDM) Silicon Photonics Integrated Circuit with Sharp Bends.

Due to the popularity of different high bandwidth applications, it is becoming increasingly difficult to satisfy the huge data capacity requirements, since the traditional electrical interconnects suffer significantly from limited bandwidth and huge power consumption. Silicon photonics (SiPh) is one of the important technologies for increasing interconnect capacity and decreasing power consumption. Mode-division multiplexing (MDM) allows signals to be transmitted simultaneously, at different modes, in a single waveguide. Wavelength-division multiplexing (WDM), non-orthogonal multiple access (NOMA) and orthogonal-frequency-division multiplexing (OFDM) can also be utilized to further increase the optical interconnect capacity. In SiPh integrated circuits, waveguide bends are usually inevitable. However, for an MDM system with a multimode bus waveguide, the modal fields will become asymmetric when the waveguide bend is sharp. This will introduce inter-mode coupling and inter-mode crosstalk. One simple approach to achieve sharp bends in multimode bus waveguide is to use a Euler curve. Although it has been reported in the literature that sharp bends based on a Euler curve allow high performance and low inter-mode crosstalk multimode transmissions, we discover, by simulation and experiment, that the transmission performance between two Euler bends is length dependent, particularly when the bends are sharp. We investigate the length dependency of the straight multimode bus waveguide between two Euler bends. High transmission performance can be achieved by a proper design of the waveguide length, width, and bend radius. By using the optimized MDM bus waveguide length with sharp Euler bends, proof-of-concept NOMA-OFDM experimental transmissions, supporting two MDM modes and two NOMA users, are performed.

Flexible Data Rate Allocation Using Non-Orthogonal Multiple Access (NOMA) in a Mode Division Multiplexing (MDM) Optical Power Splitter for System-on-Chip Networks.

We put forward and demonstrate a silicon photonics (SiPh)-based mode division multiplexed (MDM) optical power splitter that supports transverse-electric (TE) single-mode, dual-mode, and triple-mode (i.e., TE0, TE1, and TE2). An optical power splitter is needed for optical signal distribution and routing in optical interconnects. However, a traditional optical splitter only divides the power of the input optical signal. This means the same data information is received at all the output ports of the optical splitter. The powers at different output ports may change depending on the splitting ratio of the optical splitter. The main contributions of our proposed optical splitter are: (i) Different data information is received at different output ports of the optical splitter via the utilization of NOMA. By adjusting the power ratios of different channels in the digital domain (i.e., via software control) at the Tx, different channel data information can be received at different output ports of the splitter. It can increase the flexibility of optical signal distribution and routing. (ii) Besides, the proposed optical splitter can support the fundamental TE0 mode and the higher modes TE1, TE2, etc. Supporting mode-division multiplexing and multi-mode operation are important for future optical interconnects since the number of port counts is limited by the chip size. This can significantly increase the capacity besides wavelength division multiplexing (WDM) and spatial division multiplexing (SDM). The integrated SiPh MDM optical power splitter consists of a mode up-conversion section implemented by asymmetric directional couplers (ADCs) and a Y-branch structure for MDM power distribution. Here, we also propose and discuss the use of the Genetic algorithm (GA) for the MDM optical power splitter parameter optimization. Finally, to provide adjustable data rates at different output ports after the MDM optical power splitter, non-orthogonal multiple access-orthogonal frequency division multiplexing (NOMA-OFDM) is also employed. Experimental results validate that, in three modes (TE0, TE1, and TE2), user-1 and user-2 achieve data rates of (user-1: greater than 22 Gbit/s; user-2: greater than 12 Gbit/s) and (user-1: greater than 12 Gbit/s; user-2: 24 Gbit/s), respectively, at power-ratio (PR) = 2.0 or 3.0. Each channel meets the hard-decision forward-error-correction (HD-FEC, i.e., BER = 3.8 × 10-3) threshold. The proposed method allows flexible data rate allocation for multiple users for optical interconnects and system-on-chip networks.

Larger-Than-Unity External Optical Field Confinement Enabled by Metamaterial-Assisted Comb Waveguide for Ultrasensitive Long-Wave Infrared Gas Spectroscopy.

Nanophotonic waveguides that implement long optical pathlengths on chips are promising to enable chip-scale gas sensors. Nevertheless, current absorption-based waveguide sensors suffer from weak interactions with analytes, limiting their adoptions in most demanding applications such as exhaled breath analysis and trace-gas monitoring. Here, we propose an all-dielectric metamaterial-assisted comb (ADMAC) waveguide to greatly boost the sensing capability. By leveraging large longitudinal electric field discontinuity at periodic high-index-contrast interfaces in the subwavelength grating metamaterial and its unique features in refractive index engineering, the ADMAC waveguide features strong field delocalization into the air, pushing the external optical field confinement factor up to 113% with low propagation loss. Our sensor operates in the important but underdeveloped long-wave infrared spectral region, where absorption fingerprints of plentiful chemical bonds are located. Acetone absorption spectroscopy is demonstrated using our sensor around 7.33 µm, showing a detection limit of 2.5 ppm with a waveguide length of only 10 mm.

Single Virus Detection on Silicon Photonic Crystal Random Cavities.

On-chip silicon microcavity sensors are advantageous for the detection of virus and biomolecules due to their compactness and the enhanced light-matter interaction with the analyte. While their theoretical sensitivity is at the single-molecule level, the fabrication of high quality (Q) factor silicon cavities and their integration with optical couplers remain as major hurdles in applications such as single virus detection. Here, label-free single virus detection using silicon photonic crystal random cavities is proposed and demonstrated. The sensor chips consist of free-standing silicon photonic crystal waveguides and do not require pre-fabricated defect cavities or optical couplers. Residual fabrication disorder results in Anderson-localized cavity modes which are excited by a free space beam. The Q ≈105 is sufficient for observing discrete step-changes in resonance wavelength for the binding of single adenoviruses (≈50 nm radius). The authors' findings point to future applications of CMOS-compatible silicon sensor chips supporting Anderson-localized modes that have detection capabilities at the level of single nanoparticles and molecules.

Biochemistry strategies for label-free optical sensor biofunctionalization: advances towards real applicability.

Label-free biosensors, and especially those based on optical transducers like plasmonic or silicon photonic systems, have positioned themselves as potential alternatives for rapid and highly sensitive clinical diagnostics, on-site environmental monitoring, and for quality control in foods or other industrial applications, among others. However, most of the biosensor technology has not yet been transferred and implemented in commercial products. Among the several causes behind that, a major challenge is the lack of standardized protocols for sensor biofunctionalization. In this review, we summarize the most common methodologies for sensor surface chemical modification and bioreceptor immobilization, discussing their advantages and limitations in terms of analytical sensitivity and selectivity, reproducibility, and versatility. Special focus is placed on the suggestions of innovative strategies towards antifouling and biomimetic functional coatings to boost the applicability and reliability of optical biosensors in clinics and biomedicine. Finally, a brief overview of research directions in the area of device integration, automation, and multiplexing will give a glimpse of the future perspectives for label-free optical biosensors.

Electrochemical nanoimprinting of silicon.

Scalable nanomanufacturing enables the commercialization of nanotechnology, particularly in applications such as nanophotonics, silicon photonics, photovoltaics, and biosensing. Nanoimprinting lithography (NIL) was the first scalable process to introduce 3D nanopatterning of polymeric films. Despite efforts to extend NIL's library of patternable media, imprinting of inorganic semiconductors has been plagued by concomitant generation of crystallography defects during imprinting. Here, we use an electrochemical nanoimprinting process-called Mac-Imprint-for directly patterning electronic-grade silicon with 3D microscale features. It is shown that stamps made of mesoporous metal catalysts allow for imprinting electronic-grade silicon without the concomitant generation of porous silicon damage while introducing mesoscale roughness. Unlike most NIL processes, Mac-Imprint does not rely on plastic deformation, and thus, it allows for replicating hard and brittle materials, such as silicon, from a reusable polymeric mold, which can be manufactured by almost any existing microfabrication technique.

Near-IR & Mid-IR Silicon Photonics Modulators.

As the silicon photonics field matures and a data-hungry future looms ahead, new technologies are required to keep up pace with the increase in capacity demand. In this paper, we review current developments in the near-IR and mid-IR group IV photonic modulators that show promising performance. We analyse recent trends in optical and electrical co-integration of modulators and drivers enabling modulation data rates of 112 GBaud in the near infrared. We then describe new developments in short wave infrared spectrum modulators such as employing more spectrally efficient PAM-4 coding schemes for modulations up to 40 GBaud. Finally, we review recent results at the mid infrared spectrum and application of the thermo-optic effect for modulation as well as the emergence of new platforms based on germanium to tackle the challenges of modulating light in the long wave infrared spectrum up to 10.7 µm with data rates of 225 MBaud.