Structure, stability, and properties of the intergrowth compounds ([SnSe]1+δ)m(NbSe2)n, where m = n = 1-20.

Intergrowth compounds of ([SnSe]1+δ)m(NbSe2)n, where 1 ≤ m = n ≤ 20, with the same atomic composition but different c-axis lattice parameters and number of interfaces per volume were synthesized using the modulated elemental reactant technique. A c-axis lattice parameter change of 1.217(6) nm as a function of one unit of m = n was observed. In-plane X-ray diffraction shows an increase in distortion of the rock salt layer as a function of m and a broadening of the NbSe2 reflections as n increases, indicating the presence of different coordination environments for Nb (trigonal prismatic and octahedral) and smaller crystallite size, which were confirmed via scanning transmission electron microscopy investigations. The electrical resistivities of all 12 compounds exhibit metallic temperature dependence and are similar in magnitude as would be expected for isocompositional compounds. Carrier concentration and mobility of the compounds vary within a narrow range of 2-6 × 10(21) cm(-3) and 2-6 cm(2) V(-1) s(-1), respectively. Even at a thickness of 12 nm for the SnSe and NbSe2 blocks, the properties of the intergrowth compounds cannot be explained as composite behavior, due to significant charge transfer between them. Upon being annealed at 500 °C, the higher order m = n compounds were found to convert to the thermodynamically stable phase, the (1,1) compound. This suggests that the capacitive energy of the interfaces stabilizes these intergrowth compounds.

Designed Synthesis of van der Waals Heterostructures: The Power of Kinetic Control.

Selecting specific 2D building blocks and specific layering sequences of van der Waals heterostructures should allow the formation of new materials with designed properties for specific applications. Unfortunately, the synthetic ability to prepare such structures at will, especially in a manner that can be manufactured, does not exist. Herein, we report the targeted synthesis of new metal-semiconductor heterostructures using the modulated elemental-reactant technique to nucleate specific 2D building blocks, control their thickness, and avoid epitaxial structures with long-range order. The building blocks, VSe2 and GeSe2 , have different crystal structures, which inhibits cation intermixing. The precise control of this approach enabled us to synthesize heterostructures containing GeSe2 monolayers alternating with VSe2 structural units with specific sequences. The transport properties systematically change with nanoarchitecture and a charge-density wave-like transition is observed.

Synthesis of inorganic structural isomers by diffusion-constrained self-assembly of designed precursors: a novel type of isomerism.

The structure of precursors is used to control the formation of six possible structural isomers that contain four structural units of PbSe and four structural units of NbSe2: [(PbSe)1.14]4[NbSe2]4, [(PbSe)1.14]3[NbSe2]3[(PbSe)1.14]1[NbSe2]1, [(PbSe)1.14]3[NbSe2]2[(PbSe)1.14]1[NbSe2]2, [(PbSe)1.14]2[NbSe2]3[(PbSe)1.14]2[NbSe2]1, [(PbSe)1.14]2[NbSe2]2[(PbSe)1.14]1[NbSe2]1[(PbSe)1.14]1[NbSe2]1, [(PbSe)1.14]2[NbSe2]1[(PbSe)1.14]1[NbSe2]2[(PbSe)1.14]1[NbSe2]1. The electrical properties of these compounds vary with the nanoarchitecture. For each pair of constituents, over 20,000 new compounds, each with a specific nanoarchitecture, are possible with the number of structural units equal to 10 or less. This provides opportunities to systematically correlate structure with properties and hence optimize performance.

Tuning metal/superconductor to insulator/superconductor coupling via control of proximity enhancement between NbSe2monolayers.

The interplay between charge transfer and electronic disorder in transition-metal dichalcogenide multilayers gives rise to superconductive coupling driven by proximity enhancement, tunneling and superconducting fluctuations, of a yet unwieldy variety. Artificial spacer layers introduced with atomic precision change the density of states by charge transfer. Here, we tune the superconductive coupling betweenNbSe2monolayers from proximity-enhanced to tunneling-dominated. We correlate normal and superconducting properties inSnSe1+δmNbSe21tailored multilayers with varying SnSe layer thickness (m=1-15). From high-field magnetotransport the critical fields yield Ginzburg-Landau coherence lengths with an increase of140%cross-plane (m=1-9), trending towards two-dimensional superconductivity form>9. We show cross-overs between three regimes: metallic with proximity-enhanced coupling (m=1-4), disordered-metallic with intermediate coupling (m=5-9) and insulating with Josephson tunneling (m>9). Our results demonstrate that stacking metal mono- and dichalcogenides allows to convert a metal/superconductor into an insulator/superconductor system, prospecting the control of two-dimensional superconductivity in embedded layers.

Charge transfer in (PbSe)1+δ (NbSe2)2 and (SnSe)1+δ (NbSe2)2 ferecrystals investigated by photoelectron spectroscopy.

Rotationally disordered, layered (PbSe)[Formula: see text](NbSe2)2 and (SnSe)[Formula: see text](NbSe2)2 ferecrystal heterostructures, consisting of stacked two-dimensional bilayers of either PbSe or SnSe alternating with two planes of NbSe2, were synthesized from modulated elemental reactants. The electronic structure of these ternary systems was investigated using x-ray photoelectron spectroscopy and compared to the binary bulk compounds PbSe, SnSe and NbSe2. The Pb and Sn core level spectra show a significant shift towards lower binding energies and the peak shape becomes asymmetric in the ferecrystals, while the electronic structure of the NbSe2 layers does not change compared to the bulk. This is interpreted in terms of an interlayer interaction in the form of a charge transfer of electrons from PbSe or SnSe into the NbSe2 layers, which is supported by valence band spectra and is consistent with prior results from transport measurements.

Superconducting ferecrystals: turbostratically disordered atomic-scale layered (PbSe)1.14(NbSe2)n thin films.

Hybrid electronic heterostructure films of semi- and superconducting layers possess very different properties from their bulk counterparts. Here, we demonstrate superconductivity in ferecrystals: turbostratically disordered atomic-scale layered structures of single-, bi- and trilayers of NbSe2 separated by PbSe layers. The turbostratic (orientation) disorder between individual layers does not destroy superconductivity. Our method of fabricating artificial sequences of atomic-scale 2D layers, structurally independent of their neighbours in the growth direction, opens up new possibilities of stacking arbitrary numbers of hybrid layers which are not available otherwise, because epitaxial strain is avoided. The observation of superconductivity and systematic Tc changes with nanostructure make this synthesis approach of particular interest for realizing hybrid systems in the search of 2D superconductivity and the design of novel electronic heterostructures.

The Influence of Interfaces on Properties of Thin-Film Inorganic Structural Isomers Containing SnSe-NbSe2 Subunits.

Inorganic isomers ([SnSe]1+δ)m(NbSe2)n([SnSe]1+δ)p(NbSe2)q([SnSe]1+δ)r(NbSe2)s where m, n, p, q, r, and s are integers and m + p + r = n + q + s = 4 were prepared using the modulated elemental reactant technique. This series of all six possible isomers provides an opportunity to study the influence of interface density on properties while maintaining the same unit cell size and composition. As expected, all six compounds were observed to have the same atomic compositions and an almost constant c-axis lattice parameter of ≈4.90(5) nm, with a slight trend in the c-axis lattice parameter correlated with the different number of interfaces in the isomers: two, four and six. The structures of the constituents in the ab-plane were independent of one another, confirming the nonepitaxial relationship between them. The temperature dependent electrical resistivities revealed metallic behavior for all the six compounds. Surprisingly, the electrical resistivity at room temperature decreases with increasing number of interfaces. Hall measurements suggest this results from changes in carrier concentration, which increases with increasing thickness of the thickest SnSe block in the isomer. Carrier mobility scales with the thickness of the thickest NbSe2 block due to increased interfacial scattering as the NbSe2 blocks become thinner. The observed behavior suggests that the two constituents serve different purposes with respect to electrical transport. SnSe acts as a charge donor and NbSe2 acts as the charge transport layer. This separation of function suggests that such heterostructures can be designed to optimize performance through choice of constituent, layer thickness, and layer sequence. A simplistic model, which predicts the properties of the complex isomers from a weighted sum of the properties of building blocks, was developed. A theoretical model is needed to predict the optimal compound for specific properties among the many potential compounds that can be prepared.

Charge transfer vs. dimensionality: what affects the transport properties of ferecrystals?

A series of ([SnSe]1+δ)m(NbSe2)2 compounds with two layers of NbSe2 separated by m bilayers of SnSe, where 1 ≤ m ≤ 20, were prepared from modulated precursors by systematically changing the number of SnSe layers in the repeating unit. A change in the c-lattice parameter of 0.579(3) nm per SnSe bilayer was observed. The thickness of the NbSe2 layer was determined to be 1.281(4) nm: twice the value of a single NbSe2 layer. HAADF-STEM images revealed the presence of extensive rotational disorder and the lack of any epitaxial relationship among the constituent layers. Two different coordination environments for the Nb in NbSe2 (trigonal prismatic and octahedral) were observed. The electrical resistivity increases and the carrier concentration decreases in the ([SnSe]1+δ)m(NbSe2)2 compounds with increasing number of SnSe bilayers. The temperature dependence of the resistivity suggests localization of carriers for higher m values. The decline in carrier concentration as a function of m implies the presence of charge transfer from SnSe to NbSe2. The transport properties of the ([SnSe]1+δ)m(NbSe2)2 compounds and the previously reported ([SnSe]1+δ)m(NbSe2)1 compounds both have unusually temperature independent resistivity compared to bulk NbSe2. Compounds with similar m/n ratios exhibit similar transport properties. Consequently, the dominant effect on the transport properties of ([SnSe]1+δ)m(NbSe2)2 is charge transfer, and there are only subtle differences between a monolayer and a bilayer of NbSe2.