RESUMEN
We study radiative relaxation at terahertz frequencies in n-type Ge/SiGe quantum wells, optically pumped with a terahertz free electron laser. Two wells coupled through a tunneling barrier are designed to operate as a three-level laser system with non-equilibrium population generated by optical pumping around the 1â3 intersubband transition at 10 THz. The non-equilibrium subband population dynamics are studied by absorption-saturation measurements and compared to a numerical model. In the emission spectroscopy experiment, we observed a photoluminescence peak at 4 THz, which can be attributed to the 3â2 intersubband transition with possible contribution from the 2â1 intersubband transition. These results represent a step towards silicon-based integrated terahertz emitters.
RESUMEN
It is possible to confine vibrational modes to a crystal by encapsulating it within thin disordered layers with the same average properties as the crystal. This is not due to an impedance mismatch between materials but, rather, to higher order moments in the distribution of density and stiffness in the disordered phase-i.e. it is a result of material substructure. The concept is elucidated in an idealized one-dimensional setting and then demonstrated for a realistic nanocrystalline geometry. This offers the prospect of specifically engineering higher order property distributions as an alternate means of managing phonons.