Imaging the dynamics of individually adsorbed molecules.

Although noise is observed in many experiments, it is rarely used as a source of information. However, valuable information can be extracted from noisy signals. The motion of particles on a surface induced, for example, by thermal activation or by the interaction with the tip of a scanning tunnelling microscope may lead to fluctuations or switching of the tunnelling current. The analysis of these processes gives insight into dynamics on a single atomic or molecular level. Unfortunately, scanning tunnelling microscopy (STM) is not a useful tool to study dynamics in detail, as it is an intrinsically slow technique. Here, we show that this problem can be solved by providing a full real-time characterization of random telegraph noise in the current signal. The hopping rate, the noise amplitude and the relative occupation of the involved states are measured as a function of the tunnelling parameters, providing spatially resolved maps. In contrast to standard STM, our technique gives access to transiently populated states revealing an electron-driven hindered rotation between the equilibrium and two metastable positions of an individually adsorbed molecule. The new approach yields a complete characterization of copper phthalocyanine molecules on Cu(111), ranging from dynamical processes on surfaces to the underlying electronic structure on the single-molecule level.

Interplay between forward and backward scattering of spin-orbit split surface states of Bi(111).

The electronic structure at the surface of Bi(111) enables us to study the effect of defects scattering into multiple channels. By performing scanning tunneling spectroscopy near step edges, we analyze the resulting oscillations in the local density of electronic states (LDOS) as function of position. At a given energy, forward and backward scattering not only occur simultaneously but may contribute to the same scattering vector Δk. If the scattering phase of both processes differs by π and the amplitudes are almost equal, the oscillations cancel out. A sharp dip in the magnitude of the Fourier transform of the LDOS marks the crossover between forward and backward scattering channels.

Surface-induced dechlorination of FeOEP-Cl on Cu(111).

To be or not to be chlorinated: When octaethylporphyrin iron(III) chloride (FeOEP-Cl) molecules are sublimated onto Cu(111) surfaces, two different molecular species are observed through scanning tunneling microscopy, showing either a protrusion or a depression at the center. In combination with van der Waals-corrected density functional calculations, our experiments reveal that one species corresponds to FeOEP-Cl molecules with the chlorine atom pointing away from the surface, whereas the other species has been dechlorinated.

Electron transport at surfaces and interfaces.

Here we present two techniques which give insight on transport phenomena with atomic resolution. Ballistic electron emission microscopy is used to study the ballistic transport through layered heterogeneous systems. The measured ballistic fraction of the tunneling current provides information about lossless transport channels through metallic layers and organic adsorbates. The transport characteristics of Bi(111)/Si Schottky devices and the influence of the organic adsorbates perylene tetracaboxylic dianhydride acid and C(60) on the ballistic current are discussed. Scanning tunneling potentiometry gives access to the lateral transport along a surface, thus scattering processes within two-dimensional electron systems for the Bi(111) surface and the Si(111)(√3 × âˆš3)-Ag surface could be visualized.

Upgrade of a commercial four-probe scanning tunneling microscopy system.

Upgrade of a commercial ultra-high vacuum four-probe scanning tunneling microscopy system for atomic resolution capability and thermal stability is reported. To improve the mechanical and thermal performance of the system, we introduced extra vibration isolation, magnetic damping, and double thermal shielding, and we redesigned the scanning structure and thermal links. The success of the upgrade is characterized by its atomically resolved imaging, steady cooling down cycles with high efficiency, and standard transport measurement capability. Our design may provide a feasible way for the upgrade of similar commercial systems.

Nanoscale electron transport at the surface of a topological insulator.

The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

Following the steps of a reaction by direct imaging of many individual molecules.

The dehydrogenation and dechlorination of FeOEP-Cl on Cu(111) has been studied in detail by scanning tunneling microscopy. Although, it is not possible to follow the reaction of an individual molecule, the complete pathway of the reaction with 22 inequivalent intermediate states and the rates of the involved processes are revealed. This is achieved by combining the analysis of a large data set showing thousands of molecules in the different stages of the reaction with numerical simulations.

Probing the electronic transport on the reconstructed Au/Ge(001) surface.

By using scanning tunnelling potentiometry we characterized the lateral variation of the electrochemical potential µec on the gold-induced Ge(001)-c(8 × 2)-Au surface reconstruction while a lateral current flows through the sample. On the reconstruction and across domain boundaries we find that µec shows a constant gradient as a function of the position between the contacts. In addition, nanoscale Au clusters on the surface do not show an electronic coupling to the gold-induced surface reconstruction. In combination with high resolution scanning electron microscopy and transmission electron microscopy, we conclude that an additional transport channel buried about 2 nm underneath the surface represents a major transport channel for electrons.