Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2.

Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride (Si3N4) has emerged as a leading on-chip platform. To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>∼700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave-spanning SCG in a thinner moderate-confinement 400-nm Si3N4 platform using a highly nonlinear tellurium oxide (TeO2) coating. An octave supercontinuum spanning from 0.89 to 2.11 µm is achieved at a low peak power of 258 W using a 100-fs laser centered at 1565 nm. Our numerical simulations agree well with the experimental results giving a nonlinear parameter of 2.5 ± 0.5 W-1m-1, an increase by a factor of 2.5, when coating the Si3N4 waveguide with a TeO2 film. This work demonstrates highly efficient SCG via effective dispersion engineering and an enhanced nonlinearity in CMOS-compatible hybrid TeO2-Si3N4 waveguides and a promising route to monolithically integrated nonlinear, linear, and active functionalities on a single silicon photonic chip.

Erbium-ytterbium co-doped aluminium oxide waveguide amplifiers fabricated by reactive co-sputtering and wet chemical etching.

We report on the fabrication and optical characterization of erbium-ytterbium co-doped aluminum oxide (Al2O3:Er3+:Yb3+) waveguides using low-cost, low-temperature deposition and etching steps. We deposited Al2O3:Er3+:Yb3+ films using reactive co-sputtering, with Er3+ and Yb3+ ion concentrations ranging from 1.4-1.6 × 1020 and 0.9-2.1 × 1020 ions/cm3, respectively. We etched ridge waveguides in 85% pure phosphoric acid at 60°C, allowing for structures with minimal polarization sensitivity and acceptable bend radius suitable for optical amplifiers and avoiding alternative etching chemistries which use hazardous gases. Scanning-electron-microscopy (SEM) and profilometry were used to assess the etch depth, sidewall roughness, and facet profile of the waveguides. The Al2O3:Er3+:Yb3+ films exhibit a background loss as low as 0.2 ± 0.1 dB/cm and the waveguide loss after structuring is determined to be 0.5 ± 0.3 dB/cm at 1640 nm. Internal net gain of 4.3 ± 0.9 dB is demonstrated at 1533 nm for a 3.0 cm long waveguide when pumped at 970 nm. The material system is promising moving forward for compact Er-Yb co-doped waveguide amplifiers and lasers on a low-cost silicon wafer-scale platform.

Low-loss TeO2-coated Si3N4 waveguides for application in photonic integrated circuits.

We report on high-quality tellurium oxide waveguides integrated on a low-loss silicon nitride wafer-scale platform. The waveguides consist of silicon nitride strip features, which are fabricated using a standard foundry process and a tellurium oxide coating layer that is deposited in a single post-processing step. We show that by adjusting the Si3N4 strip height and width and TeO2 layer thickness, a small mode area, small bend radius and high optical intensity overlap with the TeO2 can be obtained. We investigate transmission at 635, 980, 1310, 1550 and 2000 nm wavelengths in paperclip waveguide structures and obtain low propagation losses down to 0.6 dB/cm at 2000 nm. These results illustrate the potential for compact linear, nonlinear and active tellurite glass devices in silicon nitride photonic integrated circuits operating from the visible to mid-infrared.

A Tellurium Oxide Microcavity Resonator Sensor Integrated On-Chip with a Silicon Waveguide.

We report on thermal and evanescent field sensing from a tellurium oxide optical microcavity resonator on a silicon photonics platform. The on-chip resonator structure is fabricated using silicon-photonics-compatible processing steps and consists of a silicon-on-insulator waveguide next to a circular trench that is coated in a tellurium oxide film. We characterize the device's sensitivity by both changing the temperature and coating water over the chip and measuring the corresponding shift in the cavity resonance wavelength for different tellurium oxide film thicknesses. We obtain a thermal sensitivity of up to 47 pm/°C and a limit of detection of 2.2 × 10-3 RIU for a device with an evanescent field sensitivity of 10.6 nm/RIU. These results demonstrate a promising approach to integrating tellurium oxide and other novel microcavity materials into silicon microphotonic circuits for new sensing applications.

Hybrid silicon-tellurium-dioxide DBR resonators coated in PMMA for biological sensing.

We report on silicon waveguide distributed Bragg reflector (DBR) cavities hybridized with a tellurium dioxide (TeO2) cladding and coated in plasma functionalized poly (methyl methacrylate) (PMMA) for label free biological sensors. We describe the device structure and fabrication steps, including reactive sputtering of TeO2 and spin coating and plasma functionalization of PMMA on foundry processed Si chips, as well as the characterization of two DBR designs via thermal, water, and bovine serum albumin (BSA) protein sensing. Plasma treatment on the PMMA films was shown to decrease the water droplet contact angle from ∼70 to ∼35°, increasing hydrophilicity for liquid sensing, while adding functional groups on the surface of the sensors intended to assist with immobilization of BSA molecules. Thermal, water and protein sensing were demonstrated on two DBR designs, including waveguide-connected sidewall (SW) and waveguide-adjacent multi-piece (MP) gratings. Limits of detection of 60 and 300 × 10-4 RIU were measured via water sensing, and thermal sensitivities of 0.11 and 0.13 nm/°C were measured from 25-50 °C for SW and MP DBR cavities, respectively. Plasma treatment was shown to enable protein immobilization and sensing of BSA molecules at a concentration of 2 µg/mL diluted in phosphate buffered saline, demonstrating a ∼1.6 nm resonance shift and subsequent full recovery to baseline after stripping the proteins with sodium dodecyl sulfate for a MP DBR device. These results are a promising step towards active and laser-based sensors using rare-earth-doped TeO2 in silicon photonic circuits, which can be subsequently coated in PMMA and functionalized via plasma treatment for label free biological sensing.