Two-Dimensional Non-Carbon Materials-Based Electrochemical Printed Sensors: An Updated Review.

Recently, there has been increasing interest in electrochemical printed sensors for a wide range of applications such as biomedical, pharmaceutical, food safety, and environmental fields. A major challenge is to obtain selective, sensitive, and reliable sensing platforms that can meet the stringent performance requirements of these application areas. Two-dimensional (2D) nanomaterials advances have accelerated the performance of electrochemical sensors towards more practical approaches. This review discusses the recent development of electrochemical printed sensors, with emphasis on the integration of non-carbon 2D materials as sensing platforms. A brief introduction to printed electrochemical sensors and electrochemical technique analysis are presented in the first section of this review. Subsequently, sensor surface functionalization and modification techniques including drop-casting, electrodeposition, and printing of functional ink are discussed. In the next section, we review recent insights into novel fabrication methodologies, electrochemical techniques, and sensors' performances of the most used transition metal dichalcogenides materials (such as MoS2, MoSe2, and WS2), MXenes, and hexagonal boron-nitride (hBN). Finally, the challenges that are faced by electrochemical printed sensors are highlighted in the conclusion. This review is not only useful to provide insights for researchers that are currently working in the related area, but also instructive to the ones new to this field.

Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing.

In this paper, we report on the effect of carboxyl- and amine terminations on a boron-doped diamond surface (BDD) in relation to pH sensitivity. Carboxyl termination was achieved by anodization oxidation in Carmody buffer solution (pH 7). The carboxyl-terminated diamond surface was exposed to nitrogen radicals to generate an amine-terminated surface. The pH sensitivity of the carboxyl- and amine-terminated surfaces was measured from pH 2 to pH 12. The pH sensitivities of the carboxyl-terminated surface at low and high pH are 45 and 3 mV/pH, respectively. The pH sensitivity after amine termination is significantly higher—the pH sensitivities at low and high pH are 65 and 24 mV/pH, respectively. We find that the negatively-charged surface properties of the carboxyl-terminated surface due to ionization of ⁻COOH causes very low pH detection in the high pH region (pH 7⁻12). In the case of the amine-terminated surface, the surface properties are interchangeable in both acidic and basic solutions; therefore, we observed pH detection at both low and high pH regions. The results presented here may provide molecular-level understanding of surface properties with charged ions in pH solutions. The understanding of these surface terminations on BDD substrate may be useful to design diamond-based biosensors.

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors.

High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

Electroreduction of dissolved carbon dioxide on roughened molybdenum microelectrodes.

The increasing levels of carbon dioxide (CO2) in the atmosphere may dissolve into the ocean and affect the marine ecosystem. It is crucial to determine the level of dissolved CO2 in the ocean to enable suitable mitigation actions to be carried out. The conventional electrode materials are expensive and susceptible to chloride ion attack. Therefore, there is a need to find suitable alternative materials. This novel study investigates the electrochemical behaviour of dissolved CO2 on roughened molybdenum (Mo) microdisk electrodes, which were mechanically polished using silicon carbide paper. Pits and dents can be seen on the electrode surface as observed using scanning electron microscopy. X-ray diffraction spectra confirm the absence of abrasive materials and the presence of defects on the electrode surface. The electrochemical surface for the roughened electrodes is higher than that for the smoothened electrodes. Our findings show that the roughened electrodes exhibit a significantly higher electrocatalytic activity than the smoothened electrodes for the reduction of dissolved CO2. Our results reveal a linear relationship between the current and square root of scan rate. Furthermore, we demonstrate that saturating the electrolyte solution with CO2 using a bubbling time of just 20 minutes at a flow rate of 5 L min-1 for a 50 mL solution is sufficient. This study provides new insights into the electrochemical behaviour of dissolved CO2 on roughened Mo microdisk electrodes and highlights their potential as a promising material for CO2 reduction and other electrochemical applications. Ultimately, our work contributes to the ongoing efforts to mitigate the effects of climate change and move towards a sustainable future.

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.

The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET) technologies. Nevertheless, HEMT devices suffer from certain parasitic and reliability concerns that limit their performance. This paper aims to review the latest experimental evidence regarding HEMT technologies on the parasitic issues that affect aluminum gallium nitride (AlGaN)/GaN HEMTs. The first part of this review provides a brief introduction to AlGaN/GaN HEMT technologies, and the second part outlines the challenges often faced during HEMT fabrication, such as normally-on operation, self-heating effects, current collapse, peak electric field distribution, gate leakages, and high ohmic contact resistance. Finally, a number of effective approaches to enhancing the device's performance are addressed.

A Comparative Modelling Study of New Robust Packaging Technology 1 mm2 VCSEL Packages and Their Mechanical Stress Properties.

Face recognition is one of the most sophisticated disciplines of biometric systems. The use of VCSEL in automotive applications is one of the most recent advances. The existing VCSEL package with a diffuser on top of a lens intended for automotive applications could not satisfy the criteria of the automotive TS16949: 2009 specification because the package was harmed and developed a lens fracture during 100 thermal cycle tests. In order to complete a cycle, the temperature rises from -40 °C to 150 °C and then rises again from 150 °C to 260 °C. The package then needs to be tested 500 times to ensure it fits the requirements without failing in terms of appearance or functionality. To this extent, the goal of this research is to develop packaging for 1 mm2 VCSEL chips with a diffuser on top that prevents fractures or damage to the package during heat cycle testing with multiple materials. The package was created using the applications SolidWorks 2017 and AutoCAD Mechanical 2017. The ANSYS Mechanical Structural FEA Analysis program simulated all packages for mechanical stress to guarantee that all packages generated were resilient to high temperature conditions. All packages exhibit no abnormalities and are robust for various temperatures ranging from low to high. Therefore, these packaged 1 mm2 VCSEL chips with a diffuser on top provide an effective approach for the application of VCSEL suitable in high temperature conditions.

Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review.

Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs' electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.

New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications.

Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (<2 V) and the very high gate leakage current (∼1 mA/mm), which degrade device and performance especially in monolithic microwave integrated circuits low-noise amplifiers (MMIC LNAs). These drawbacks are caused by the impact ionization in the low band gap, i.e., the InxGa(1-x)As (x = 0.53 or 0.7) channel material plus the contribution of other parts of the epitaxial structure. The capability to achieve higher frequency operation is also hindered in conventional InGaAs/InAlAs/InP pHEMTs, due to the standard 1 µm flat gate length technology used. A key challenge in solving these issues is the optimization of the InGaAs/InAlAs epilayer structure through band gap engineering. A related challenge is the fabrication of submicron gate length devices using I-line optical lithography, which is more cost-effective, compared to the use of e-Beam lithography. The main goal for this research involves a radical departure from the conventional InGaAs/InAlAs/InP pHEMT structures by designing new and advanced epilayer structures, which significantly improves the performance of conventional low-noise pHEMT devices and at the same time preserves the radio frequency (RF) characteristics. The optimization of the submicron T-gate length process is performed by introducing a new technique to further scale down the bottom gate opening. The outstanding achievements of the new design approach are 90% less gate current leakage and 70% improvement in breakdown voltage, compared with the conventional design. Furthermore, the submicron T-gate length process also shows an increase of about 58% and 33% in fT and fmax, respectively, compared to the conventional 1 µm gate length process. Consequently, the remarkable performance of this new design structure, together with a submicron gate length facilitatesthe implementation of excellent low-noise applications.