Secondary-Phase-Assisted Grain Boundary Migration in CuInSe_{2}.

Significant structural evolution occurs during the deposition of CuInSe_{2} solar materials when the Cu content increases. We use in situ heating in a scanning transmission electron microscope to directly observe how grain boundaries migrate during heating, causing nondefected grains to consume highly defected grains. Cu substitutes for In in the near grain boundary regions, turning them into a Cu-Se phase topotactic with the CuInSe_{2} grain interiors. Together with density functional theory and molecular dynamics calculations, we reveal how this Cu-Se phase makes the grain boundaries highly mobile.

Investigation of the potassium fluoride post deposition treatment on the CIGSe/CdS interface using hard X-ray photoemission spectroscopy - a comparative study.

The impact of the potassium fluoride post deposition treatment on CIGSe chalcopyrite absorbers is investigated by means of depth resolved hard X-ray photoemission spectroscopy of the near surface region. Two similar, slightly Cu-poor CIGSe absorbers were used with one being treated by potassium fluoride prior to the chemical bath deposition of an ultrathin CdS layer. The thickness of the CdS layer was chosen to be in the range of about 10 nm in order to allow the investigation of the CIGSe/CdS interface by the application of hard X-rays, increasing the information depth up to 30 nm. Besides strong intermixing on both samples, an increased Cu depletion of the KF treated absorber was observed in combination with an increased accumulation of Cd and S. In addition, a general shift of about 0.15 eV to higher binding energies of the CIGSe valence band at the absorber surface as well as the CIGSe and CdS related core levels was measured on the KF treated sample. This phenomenon is attributed to the impact of additional cadmium which acts as donor and releases further electrons into the conduction band of the absorber. Finally, the electrons accumulate at the CdS surface after having passed the interface region. This additional surface charge leads to a pronounced shift in the photoemission spectra as observed on the KF treated CIGSe absorber compared to the non-treated absorber.

Well-Controlled Dielectric Nanomeshes by Colloidal Nanosphere Lithography for Optoelectronic Enhancement of Ultrathin Cu(In,Ga)Se2 Solar Cells.

Ultrathin Cu(In,Ga)Se2 (CIGSe) solar cells pose challenges of incomplete absorption and back contact recombination. In this work, we applied the simple collodial nanosphere lithography and fabricated 2D SiO2 nanomeshes (NMs), which simultaneously benefit ultrathin CIGSe solar cells electrically and optically. Electrically, the NMs are capable of passivating the back contact recombination and increasing the minimum bandgap of absorbers. Optically, the parasitic absorption in Mo as a main optical loss is reduced. Consequently, the SiO2 NMs give rise to an increase of 3.5 mA/cm2 in short circuit current density (Jsc) and of 57 mV in open circuit voltage increase (Voc), leading to an absolute efficiency enhancement as high as 2.6% (relatively 30%) for CIGSe solar cells with an absorber thickness of only 370 nm and a steep back Ga/[Ga + In] grading.

Correlating the Local Defect-Level Density with the Macroscopic Composition and Energetics of Chalcopyrite Thin-Film Surfaces.

The unusual defect chemistry of polycrystalline Cu(In,Ga)Se2 (CIGSe) thin films is a main issue for a profound understanding of recombination losses in chalcopyrite thin-film solar cells. Especially, impurity-driven passivation of electronic levels due to point defects segregating at the surface and at grain boundaries is extensively debated. By combining current imaging tunneling spectroscopy with photoelectron spectroscopy, the local defect-level density and unusual optoelectronic grain-boundary properties of this material are correlated with the macroscopic energy levels and surface composition. Vacuum annealing of different CIGSe materials provides evidence that Na diffusion from the glass substrate does not affect the surface defect passivation or grain-boundary properties of standard Cu-poor materials. Furthermore, we find no major impact on the observed thermally activated dipole compensation or the accompanying change in surface band bending (up to 0.6 eV) due to Na. In contrast, Cu-rich CIGSe shows an opposing surface defect chemistry with only minor heat-induced band bending. Our results lead to a comprehensive picture, where the highly desirable type inversion at the p/n interface in standard chalcopyrite thin-film solar cells is dominated by band bending within the CIGSe absorber rather than the result of Na impurities or an n-type defect phase segregating at the interface. This is in accordance with recent studies suggesting a surface reconstruction as the origin for Cu depletion and band-gap widening at the surface of chalcopyrite thin films.