Hybrid mode for absorption enhancement in the Ga2O3 nanocavity photodetector with grating electrodes.

Gallium oxide (G a 2 O 3) photodetectors have drawn increased interest for their widespread applications ranging from military to civil. Due to the inherent oxygen vacancy defects, they seriously suffer from trade-offs that make them incompetent for high-responsivity, quick-response detection. Herein, a G a 2 O 3 nanocavity photodetector assisted with grating electrodes is designed to break the constraint. The proposed structure supports both the plasmonic mode and the Fabry-Perot (F-P) mode. Numerical calculations show that the absorption of 99.8% is realized for ultra-thin G a 2 O 3 (30 nm), corresponding to a responsivity of 12.35 A/W. Benefiting from optical mechanisms, the external quantum efficiency (EQE) reaches 6040%, which is 466 times higher than that of bare G a 2 O 3 film. Furthermore, the proposed photodetector achieves a polarization-dependent dichroism ratio of 9.1, enabling polarization photodetection. The grating electrodes also effectively reduce the transit time of the photo-generated carriers. Our work provides a sophisticated platform for developing high-performance G a 2 O 3 photodetectors with the advantages of simplified fabrication processes and multidimensional detection.

High-enhancement photoluminescence of monolayer MoS2 in hybrid plasmonic systems.

Monolayer molybdenum disulfide (M o S 2) has a weak light-matter interaction due to ultrathin thickness, which limits its potential application in lasing action. In this study, we propose a hybrid structure consisting of a nanocavity and Au nanoparticles to enhance the photon emission efficiency of monolayer M o S 2. Numerical simulations show that photoluminescence (PL) emission is significantly enhanced by introducing localized surface plasmon resonance (LSPR) to the proposed structure. Furthermore, an exciton energy band system is proposed to elucidate the physical mechanism of the PL process. By optimizing the spacer thickness, a high Purcell enhancement factor of 95 can be achieved. The results provided by this work pave the way to improve the PL efficiency of two-dimensional (2D) material, which constitutes a significant step towards the development of nanodevices such as nanolasers and sensors.

BP-based supervised learning algorithm for multilayer photonic spiking neural network and hardware implementation.

We introduce a supervised learning algorithm for photonic spiking neural network (SNN) based on back propagation. For the supervised learning algorithm, the information is encoded into spike trains with different strength, and the SNN is trained according to different patterns composed of different spike numbers of the output neurons. Furthermore, the classification task is performed numerically and experimentally based on the supervised learning algorithm in the SNN. The SNN is composed of photonic spiking neuron based on vertical-cavity surface-emitting laser which is functionally similar to leaky-integrate and fire neuron. The results prove the demonstration of the algorithm implementation on hardware. To seek ultra-low power consumption and ultra-low delay, it is great significance to design and implement a hardware-friendly learning algorithm of photonic neural networks and realize hardware-algorithm collaborative computing.

Ultrahigh thermal-efficient all-optical silicon photonic crystal nanobeam cavity modulator with TPA-induced thermo-optic effect.

We propose and experimentally demonstrate an on-chip all-optical silicon photonic crystal nanobeam cavity (PCNBC) modulator. With the advantages of the strong two-photon absorption (TPA)-induced thermo-optic (TO) effect, ultrahigh thermal-efficient tuning with π phase shift temperature difference ΔTπ of 0.77°C and power Pπ of 0.26 mW is implemented. Moreover, the all-optical modulation is carried out by a pulsed pump light with an average switching power of 0.11 mW. The response times for the rising and falling edges are 7.6 µs and 7.4 µs, respectively. Such a thermal-efficient modulator is poised to be the enabling device for large-scale integration optical signal control systems.

Impact of multi-domain effect on the effective carrier mobility of ferroelectric field-effect transistor.

HfO2-based ferroelectric field-effect transistors (FeFETs) are a promising candidate for multilevel memory manipulation and brain-like computing due to the multi-domain properties of the HfO2FE films based polycrystalline structure. Although there have been many reports on the working mechanism of the HfO2-based FeFET and improving its reliability, the impact of multi-domain effect on the effective carrier mobility (µchannel) has not been carried out yet. The effectiveµchanneldetermines the level of readout current and affects the accuracy of the precision of peripheral circuit. In this work, FeFETs with HfZrOxFE gate dielectric were fabricated, and the effect of write (or erase) pulses with linear gradient variation on the effectiveµchannelwas studied. For the multiple downward polarization under write pulses, theµchanneldegrades as the domains gradually switch to downward. This is mainly due to the enhancement of the scattering effect induced by the positive charges (e.g. oxygen vacanciesVO2+) trapping and the increase of channel carrier density. For the erase pulses, theµchannelincreases as the domains gradually reverse to upward, which is mainly due to the reduction of the scattering effect induced by the detrapping of positive charges and the decrease of channel carrier density. In addition, the modulation effect of multilevel polarization states onµchannelis verified by numerical simulation. This effect provides a new idea and solution for the development of low power HfO2-based FeFETs in neuromorphic computing.

Compact non-volatile ferroelectric electrostatic doping optical memory based on the epsilon-near-zero effect.

With the booming development of optoelectronic hybrid integrated circuits, the footprint and power consumption of photonic devices have become the most constraining factors for development. To solve these problems, this paper proposes a compact, extremely low-energy and non-volatile optical readout memory based on ferroelectric electrostatic doping and the epsilon-near-zero (ENZ) effect. The writing/erasing state of an optical circuit is controlled by electrical pulses and can remain non-volatile. The device works on the principle that residual polarization charges of ferroelectric film, which is compatible with CMOS processes, are utilized to electrostatically dope indium tin oxide to achieve the ENZ state. Simulation results show that a significant modulation depth of 10.4 dB can be achieved for a device length of 60 µm with an energy consumption below 1 pJ.

Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film.

HfO2-based films with high compatibility with Si and complementary metal-oxide semiconductors (CMOS) have been widely explored in recent years. In addition to ferroelectricity and antiferroelectricity, flexoelectricity, the coupling between polarization and a strain gradient, is rarely reported in HfO2-based films. Here, we demonstrate that the mechanically written out-of-plane domains are obtained in 10 nm Hf0.5Zr0.5O2 (HZO) ferroelectric film at room temperature by generating the stress gradient via the tip of an atomic force microscope. The results of scanning Kelvin force microscopy (SKPM) exclude the possibility of flexoelectric-like mechanisms and prove that charge injection could be avoided by mechanical writing and thus reveal the true polarization state, promoting wider flexoelectric applications and ultrahigh-density storage of HZO thin films.

Energy-efficient non-volatile ferroelectric based electrostatic doping multilevel optical readout memory.

Non-volatile multilevel optical memory is an urgent needed artificial component in neuromorphic computing. In this paper, based on ferroelectric based electrostatic doping (Fe-ED) and optical readout due to plasma dispersion effect, we propose an electrically programmable, multi-level non-volatile photonics memory cell, which can be fabricated by standard complementary-metal-oxide-semiconductor (CMOS) compatible processes. Hf0.5Zr0.5O2 (HZO) film is chosen as the ferroelectric ED layer and combines with polysilicon layers for an enhanced amplitude modulation between the carrier accumulation and the confined optical field. Insertion loss below 0.4 dB in erasing state and the maximum recording depth of 9.8 dB are obtained, meanwhile maintaining an extremely low dynamic energy consumption as 1.0-8.4 pJ/level. Those features make this memory a promising candidate for artificial optical synapse in neuromorphic photonics and parallel computing.

Lateral waveguide scanner integration on surface-emitting mid-infrared lasers.

In this paper, a novel, to the best of our knowledge, monolithic non-mechanical semiconductor laser scanner in the mid-infrared (MIR) spectrum is proposed. A deflector above the active region at the substrate side is used for coupling the vertical light into a lateral substrate waveguide, which creates a chain of coherent emitters such as optical phased arrays (OPAs) for beam steering. The numerical simulation reveals that GaSb-based surface-emitting interband cascade lasers (SE-ICLs) are an excellent platform for waveguide scanner integration. Due to the hundreds of micrometers of optical path difference and the narrow gap between each emitter, an extremely high angle tuning coefficient of 0.84°/nm covering the whole 28.6° steering range is obtained. This work theoretically verifies the feasibility of integrating an OPA scanner into the GaSb-based SE-ICLs, providing a practical solution to fabricate compact steerable MIR laser sources. Note that this substrate OPA concept has strong adaptation potential to extend to even longer wavelength devices such as InP and GaAs-based quantum cascade lasers.

Dynamical manipulation of a dual-polarization plasmon-induced transparency employing an anisotropic graphene-black phosphorus heterostructure.

Dynamical tunable plasmon-induced transparency (PIT) possesses the unique characteristics of controlling light propagation states, which promises numerous potential applications in efficient optical signal processing chips and nonlinear optical devices. However, previously reported configurations are sensitive to polarization and can merely operate under specific single polarization. In this work we propose an anisotropic PIT metamaterial device based on a graphene-black phosphorus (G-BP) heterostructure to realize a dual-polarization tunable PIT effect. The destructive interference coupling between the bright mode and dark modes under the orthogonal polarization state pronounced anisotropic PIT phenomenon. The coupling strength of the PIT system can be modulated by dynamically manipulating the Fermi energy of the graphene via the external electric field voltage. Moreover, the three-level plasmonic system and the coupled oscillator model are employed to explain the underlying mechanism of the PIT effect, and the analytical results show good consistency with the numerical calculations. Compared to the single-polarization PIT devices, the proposed device offers additional degrees of freedom in realizing universal tunable functionalities, which could significantly promote the development of next-generation integrated optical processing chips, optical modulation and slow light devices.

Enhanced transmission through a Si-InSb-Si bimaterial subwavelength grating with slits at the terahertz range.

Two groups of grating structures with subwavelength slits, composed of different materials are investigated to realize an extraordinary optical transmission (EOT) phenomenon. We find that the transmittance of a InSb grating at the frequencies corresponding to surface plasmon (SP) excitation is almost zero, which verifies the negative role of SPPs in transmission anomalies. And optical characteristics of these bimaterial grating structures are thoroughly analyzed by the transmittance spectrum and optical field intensity. In addition, the greatly enhanced transmission was achieved by changing the temperature, doping concentration, and the geometrical parameters of the InSb-Si-InSb bimaterial grating structure, and the optimized transmission can reach almost 94%. Besides, it is verified that the position of the peaks is strongly dependent on the depth of the slits. Last, we demonstrate the transmission of the InSb-Si-InSb bimaterial grating is higher than its counterparts, and the collimated beaming effect is also realized through it. These features make this structure an excellent candidate for plasmonic components in all optical and optoelectronic fields.

High-Q resonance in GeSn-based bound states in the continuum microcavity.

In recent years, the investigations of lasers based on group IV material have been limited by the low quality (Q) factor of the resonant modes. With the improvement of the optical bound states in the continuum (BICs) in various dielectric systems, we propose a novel design that takes advantages of both the direct bandgap dielectric material GeSn and the BIC phenomenon. In addition to the demonstration of the unprecedented high-Q factors (i.e., ∼1010) that improve the emission process, the vertical symmetry broken structure can emit light at the wavelength of 1870 nm with higher luminous intensity (i.e., ∼24). The modulation effect of the material and geometric parameters on the Q value and the luminous intensity of the structure are also demonstrated. Our investigations provide useful guidelines for potential applications such as on-chip light sources in group IV photonics and optical communications.

Multiple-layer black phosphorus phototransistor with Si microdisk resonator based on whispering gallery modes.

In this study, we investigate the whispering gallery modes (WGMs) of a 14-layer black phosphorous (BP) phototransistor based on a silicon microdisk. The transmission characteristics of the waveguide-coupled microdisk resonator with and without BP are analyzed to determine the resonance wavelength. The effect of BP on the electric field distributions of the WGMs of the Si microdisk resonator is simulated by using the finite-element method. In addition, the enhanced optical absorption of the BP-covered Si microdisk resonator is further analyzed by the coupled mode theory. Contrastingly, the device also functions as a phototransistor with a peak responsivity of 328.1 A/W and high field-effect mobility of nearly 466.6 cm2 V-1 s-1. Our proposed device paves the path for the exploitation of BP optoelectronics devices with the assistance of optical microresonators in the near-infrared range (NIR).

Localized plasmon resonances for black phosphorus bowtie nanoantennas at terahertz frequencies.

In this work, a periodic bowtie structure based on black phosphorus (BP) is theoretically proposed and characterized. It is demonstrated that localized surface plasmons can be excited in the BP nanoantennas at terahertz (THz) frequencies. Numerical investigations, using the numerical method finite-difference time-domain (FDTD), have been utilized to analyze the the dimensions' impact on absorption spectra. Furthermore, the electric field distribution is plotted and discussed to explain the resonance wavelength tuning by different geometrical sizes of the structure. Results reveal that the optimized BP bow-tie structure can be allowed for the realization of two-dimensional nanophotonics at terahertz frequencies.

Simulation investigation of strained black phosphorus photodetector for middle infrared range.

In this paper, we design the uniaxially and biaxially strained black phosphorus (BP) photodetectors. Different strains applied in the zigzag or armchair direction can effectively tune the direct band gap of 5-layer of BP. The optical field intensity is modeled to determine the absorption for the BP layer. The strain effect on the band structure of BP is investigated using first-principles method based on density functional theory. The cut-off wavelength of strained 5-layer of BP pin photodetector is extended to middle infrared range with a high responsivity of 66.29 A/W, which means that the strained black phosphorus photodetector provides a new approach for the middle-infrared range optoelectronic devices.

Engineering rainbow trapping and releasing in ultrathin THz plasmonic graded metallic grating strip with thermo-optic material.

In this paper, we propose an ultrathin THz plasmonic metallic strip based on graded grating structure with thermo-optic material, which exhibits a strong engineering of trapping and releasing electromagnetic waves in terahertz regimes. The dispersion properties of the ultrathin spoof slow-wave plasmonic graded grating waveguide are characterized using the finite element method, and the propagation characteristics of the grating structures are thoroughly analyzed by the dispersion curves, electric field magnitude distribution, and electric field vertical distribution. The gradient grating waveguide is demonstrated to be an ideal slow-wave system for trapping and releasing surface plasmon polaritons (SPPs) waves through tuning the refractive index of the thermo-optic material. The reflected location for the SPPs waves on the graded corrugated metal strip at 1.1 THz at different temperatures are compared. It is proved that such ultrathin gradient grating waveguide provides an excellent performance for trapping and releasing surface waves at THz, which permits applications for future optical communications.

Spoof surface plasmon polaritons based on ultrathin corrugated metallic grooves at terahertz frequency.

We investigate the dispersion properties of an ultrathin spoof plasmonic waveguide based on metal strip grooves using the finite element method. The confinement ability of the surface plasmon polariton (SPP) waves are influenced by the dispersion curves, which can be modulated by the structure parameters. The propagation characteristics of a subwavelength planar plasmonic waveguide ring resonator have also been studied. Furthermore, a gain medium is introduced to compensate for the propagation loss of the SPP wave in the device at terahertz frequency. It is demonstrated that the gain medium provides an enhancement for the control of on/off states of the signal with the presence of pumping, which paves a way for gain-assisted switching and lasing applications in the terahertz regime.

Theoretical analysis of performance enhancement in GeSn/SiGeSn light-emitting diode enabled by Si3N4 liner stressor technique.

We comprehensively investigate the energy band diagrams, carrier distribution, spontaneous emission rate rsp, and the internal quantum efficiency ηIQE in the lattice-matched GeSn/SiGeSn double heterostructure light-emitting diode (LED) wrapped in a Si3N4 liner stressor. The large tensile strain introduced into the device by the expansion of the Si3N4 liner is characterized by numerical simulation. A lower Sn composition required for the indirect to direct bandgap transition and a higher ratio of the electron occupation probability in the Γ conduction valley are achieved in the tensile strained GeSn/SiGeSn LED in comparison with the relaxed device. Analytical calculation shows that the tensile strained LED wrapped in the Si3N4 liner stressor exhibits the improved rsp and ηIQE compared to the relaxed device. rsp and ηIQE also can be enhanced by increasing Sn composition, carrier injection density, and n-type doping concentration in the GeSn active layer.

Simulation investigation of tensile strained GeSn fin photodetector with Si(3)N(4) liner stressor for extension of absorption wavelength.

In this paper, we design a biaxial tensile strained GeSn photodetector with fin structure wrapped in Si(3)N(4) liner stressor. A large biaxial tensile strain is induced in GeSn fins by the expansion of Si(3)N(4) liner stressor. The distribution of tensile strain in GeSn fins was calculated by a finite element simulation. It is observed that magnitude of the strain increases with the reduction of fin thickness T(fin). Under the biaxial tensile strain, the direct band gap E(G,Γ) of GeSn fin photodetector is significantly reduced by lowering Γ conduction valley in energy and lifting of degeneracy of valence bands. As the 30 nm Si(3)N(4) liner stressor expanses by 1%, a E(G,Γ) reduction of ~0.14 eV is achieved in Ge(0.92)Sn(0.08) fins with a T(fin) of 100 nm. The cut-off wavelengths of strained Ge(0.96)Sn(0.04), Ge(0.92)Sn(0.08) and Ge(0.90)Sn(0.10) fin photodetectors with a T(fin) of 100 nm are extended to 2.4, 3.3, and 4 µm, respectively. GeSn fin photodetector integrated with Si(3)N(4) liner stressor provides an effective technique for extending the absorption edge of GeSn with Sn composition less than 10% to mid-infrared wavelength.

Theoretical investigation of tensile strained GeSn waveguide with Si3N4 liner stressor for mid-infrared detector and modulator applications.

We theoretically investigate a tensile strained GeSn waveguide integrated with Si3N4 liner stressor for the applications in mid-infrared (MIR) detector and modulator. A substantial tensile strain is induced in a 1 × 1 µm² GeSn waveguide by the expansion of 500 nm Si3N4 liner stressor and the contour plots of strain are simulated by the finite element simulation. Under the tensile strain, the direct bandgap E(G,Γ) of GeSn is significantly reduced by lowering the Γ conduction valley in energy and lifting of degeneracy of valence bands. Absorption coefficients of tensile strained GeSn waveguides with different Sn compositions are calculated. As the Si3N4 liner stressor expands by 1%, the cut-off wavelengths of tensile strained Ge(0.97)Sn(0.03), Ge(0.95)Sn(0.05), and Ge(0.90)Sn(0.10) waveguide photodetectors are extended to 2.32, 2.69, and 4.06 µm, respectively. Tensile strained Ge(0.90)Sn(0.10) waveguide electro-absorption modulator based on Franz-Keldysh (FK) effect is demonstrated in theory. External electric field dependence of cut-off wavelength and propagation loss of tensile strained Ge(0.90)Sn(0.10) waveguide is observed, due to the FK effect.