Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime.

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe^{2}/h), are hallmarks of a three-dimensional topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe_{2} and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe nonlinear QH transitions at low charge density in strongly coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N=0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates intersurface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation.

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions.

Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices.

Fade and quench-resistant emission in calcium phosphate nanoreactors.

The fluorescence emission and photodegradation properties of fluorescein dye inside fluid-filled spherical nanoreactors ∼ 150 nm in diameter and surrounded by a few nanometres thick layer of calcium phosphate are considered in detail. Steady state, stopped flow, and laser pulsed fluorescence spectroscopies, absorption spectroscopy, dynamic light scattering and electron microscopy were used to characterize the materials as a function of encapsulated dye concentration, particle concentration, illumination time, and pH. Fluorescein tends to form stable J-aggregates inside the nanoreactors. The molecular collision rate constants between the dye aggregates and between the dyes and soluble quenchers are greatly reduced inside the nanoreactors and are responsible for the observed resistance to photodegradation and reduced emission quenching. A model for dye behaviour in nanoreactors is suggested. Nanoreactors can be concentrated to a high suspension concentration, yielding exceptionally strong luminescence affected only by inner filter effects absent particle-particle crosstalk. These and similar nanoreactors can be utilized as building blocks for three-dimensional photo-optical devices, and as versatile and resilient supramolecular chromophores or tracers in complex fluids, cells and microfluidic systems where high resolution visualization is needed.

Enhancement in surface mobility and quantum transport of Bi2-xSbxTe3-ySey topological insulator by controlling the crystal growth conditions.

Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field.