Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge2SSe van der Waals Heterostructures.

Recently, searching for a metal-semiconductor junction (MSJ) that exhibits low-contact resistance has received tremendous consideration, as they are essential components in next-generation field-effect transistors. In this work, we design a MSJ by integrating two-dimensional (2D) graphene as the metallic electrode and 2D Janus γ-Ge2SSe as the semiconducting channel using first-principles simulations. All the graphene/γ-Ge2SSe MSJs are predicted to be energetically, mechanically, and thermodynamically stable, characterized by the weak van der Waals (vdW) interactions. The graphene/γ-SGe2Se MSJ-vdWH form the n-type Schottky contact (SC), while the graphene/γ-SeGe2S MSJ-vdWH form the p-type one, suggesting that the switching between p-type and n-type SC in the graphene/γ-Ge2SSe MSJ-vdWHs can occur spontaneously by simply altering the stacking patterns, without requiring any external conditions. Notably, the contact features, including contact types and barriers of the graphene/γ-Ge2SSe MSJs are significant in versatility and can be altered by applying electric gating and adjusting interlayer spacing. Both the applied electric gating and strain engineering induce switchability between p- and n-type and SC to OC in the graphene/γ-Ge2SSE MSJs. This versatility underscores the potential of the graphene/γ-Ge2SSe MSJ for next-generation applications that require low-contact resistance and high performance.

Electronic phase transition in bilayer P6mmm borophene.

In this study, using the tight-binding model and Green's function technique, we investigate potential electronic phase transitions in bilayer P6mmm borophene under the influence of external stimuli, including a perpendicular electric field, electron-hole coupling between sublayers (excitonic effects), and dopants. Our focus is on key electronic properties such as the band structure and density of states. Our findings reveal that the pristine lattice is metal with Dirac cones around the Fermi level, where their intersection forms a nodal line. The system undergoes transitions to a semiconducting state - elimination of nodal line - with a perpendicular electric field and a semimetallic state - transition from two Dirac cones to a single Dirac cone - with combined electric field and excitonic effects. Notably, with these, the system retains its massless Dirac-like bands characteristic at finite energy. However, introducing a dopant still leads to a metallic phase, but the Dirac-like bands become massive. Considering all these effects, the system ultimately reaches a semiconducting phase with massive Dirac-like bands. These results hold significance for optoelectronic applications.

Electron-phonon coupling effect on the optical absorption of gated ß12-borophene.

This study addresses the effect of electron-phonon coupling (EPC) on the electro-optical properties of gated ß12-borophene. The focus is on how EPC influences the orbital hybridization of boron atoms, particularly within the Barisic-Labbe-Friedel-Su-Schrieffer-Heeger framework, and considers the role of gate electrodes in this process. The results reveal a redshift in the optical spectrum only when there is positive feedback from one electrode on EPC. In other configurations, except for the y-direction, a blueshift spectrum is observed. The study emphasizes the importance of tuning these spectral shifts for maximizing the performance of solar cells in converting sunlight into usable energy.

Exploring the ultrafast and isomer-dependent photodissociation of iodothiophenes via site-selective ionization.

C-I bond extension and fission following ultraviolet (UV, 262 nm) photoexcitation of 2- and 3-iodothiophene is studied using ultrafast time-resolved extreme ultraviolet (XUV) ionization in conjunction with velocity map ion imaging. The photoexcited molecules and eventual I atom products are probed by site-selective ionization at the I 4d edge using intense XUV pulses, which induce multiple charges initially localized to the iodine atom. At C-I separations below the critical distance for charge transfer (CT), charge can redistribute around the molecule leading to Coulomb explosion and charged fragments with high kinetic energy. At greater C-I separations, beyond the critical distance, CT is no longer possible and the measured kinetic energies of the charged iodine atoms report on the neutral dissociation process. The time and momentum resolved measurements allow determination of the timescales and the respective product momentum and kinetic energy distributions for both isomers, which are interpreted in terms of rival 'direct' and 'indirect' dissociation pathways. The measurements are compared with a classical over the barrier model, which reveals that the onset of the indirect dissociation process is delayed by ∼1 ps relative to the direct process. The kinetics of the two processes show no discernible difference between the two parent isomers, but the branching between the direct and indirect dissociation channels and the respective product momentum distributions show isomer dependencies. The greater relative yield of indirect dissociation products from 262 nm photolysis of 3-iodothiophene (cf. 2-iodothiophene) is attributed to the different partial cross-sections for (ring-centred) π∗ ← π and (C-I bond localized) σ∗ ← (n/π) excitation in the respective parent isomers.

Valence shell electronically excited states of norbornadiene and quadricyclane.

The absolute photoabsorption cross sections of norbornadiene (NBD) and quadricyclane (QC), two isomers with chemical formula C7H8 that are attracting much interest for solar energy storage applications, have been measured from threshold up to 10.8 eV using the Fourier transform spectrometer at the SOLEIL synchrotron radiation facility. The absorption spectrum of NBD exhibits some sharp structure associated with transitions into Rydberg states, superimposed on several broad bands attributable to valence excitations. Sharp structure, although less pronounced, also appears in the absorption spectrum of QC. Assignments have been proposed for some of the absorption bands using calculated vertical transition energies and oscillator strengths for the electronically excited states of NBD and QC. Natural transition orbitals indicate that some of the electronically excited states in NBD have a mixed Rydberg/valence character, whereas the first ten excited singlet states in QC are all predominantly Rydberg in the vertical region. In NBD, a comparison between the vibrational structure observed in the experimental 11B1-11A1 (3sa1 ← 5b1) band and that predicted by Franck-Condon and Herzberg-Teller modeling has necessitated a revision of the band origin and of the vibrational assignments proposed previously. Similar comparisons have encouraged a revision of the adiabatic first ionization energy of NBD. Simulations of the vibrational structure due to excitation from the 5b2 orbital in QC into 3p and 3d Rydberg states have allowed tentative assignments to be proposed for the complex structure observed in the absorption bands between ∼5.4 and 7.0 eV.

Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices.

Conducting heterostructures have emerged as a promising strategy to enhance physical properties and unlock the potential application of such materials. Herein, we conduct and investigate the electronic and transport properties of the BSe/Sc2CF2 heterostructure using first-principles calculations. The BSe/Sc2CF2 heterostructure is structurally and thermodynamically stable, indicating that it can be feasible for further experiments. The BSe/Sc2CF2 heterostructure exhibits a semiconducting behavior with an indirect band gap and possesses type-II band alignment. This unique alignment promotes efficient charge separation, making it highly promising for device applications, including solar cells and photodetectors. Furthermore, type-II band alignment in the BSe/Sc2CF2 heterostructure leads to a reduced band gap compared to the individual BSe and Sc2CF2 monolayers, leading to enhanced charge carrier mobility and light absorption. Additionally, the generation of the BSe/Sc2CF2 heterostructure enhances the transport properties of the BSe and Sc2CF2 monolayers. The electric fields and strains can modify the electronic properties, thus expanding the potential application possibilities. Both the electric fields and strains can tune the band gap and lead to the type-II to type-I conversion in the BSe/Sc2CF2 heterostructure. These findings shed light on the versatile nature of the BSe/Sc2CF2 heterostructure and its potential for advanced nanoelectronic and optoelectronic devices.

On the impact of adsorbed gas molecules on the anisotropic electro-optical properties of ß12-borophene.

We theoretically study the role of adsorbed gas molecules on the electronic and optical properties of monolayer ß12-borophene with {a,b,c,d,e} atoms in its unit cell. We focus our attention on molecules NH3, NO, NO2, and CO, which provide additional states permitted by the host electrons. Utilizing the six-band tight-binding model based on an inversion symmetry (between {a,e} and {b,d} atoms) and the Kubo formalism, we survey the anisotropic electronic dispersion and the optical multi-interband spectrum produced by molecule-boron coupling. We consider the highest possibilities for the position of molecules on the boron atoms. For molecules on {a,e} atoms, the inherent metallic phase of ß12-borophene becomes electron-doped semiconducting, while for molecules on {b,d} and c atoms, the metallic phase remains unchanged. For molecules on {a,e} and {b,d} atoms, we observe a redshift (blueshift) optical spectrum for longitudinal/transverse (Hall) component, while for molecules on c atoms, we find a redshift (blueshift) optical spectrum for longitudinal (transverse/Hall) component. We expect that this study provides useful information for engineering field-effect transistor-based gas sensors.

Two-dimensional Janus MGeSiP4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations.

Novel Janus materials have attracted broad interest due to the outstanding properties created by their out-of-plane asymmetry, with increasing theoretical exploration and more reports of successful fabrication in recent years. Here, we construct and explore the crystal structures, stabilities, electronic band structures, and transport properties - including carrier mobilities - of two-dimensional Janus MGeSiP4 (M = Ti, Zr, or Hf) monolayers based on density functional theory calculations. From the cohesive energies, elastic constants, and phonon dispersion calculations, the monolayers are confirmed to exhibit structural stability with high feasibility for experimental synthesis. All the structures are indirect band-gap semiconductors with calculated band-gap energies in the range of 0.77 eV to 1.01 eV at the HSE06 (Heyd-Scuseria-Ernzerhof) level. Interestingly, by applying external biaxial strain, a semiconductor to metal phase transition is observed for the three Janus structures. This suggests potential for promising applications in optoelectronic and electromechanical devices. Notably, the MGeSiP4 monolayers show directionally anisotropic carrier mobility with a high electron mobility of up to 2.72 × 103 cm2 V-1 s-1 for the ZrGeSiP4 monolayer, indicating advantages for applications in electronic devices. Hence, the presented results reveal the novel properties of the 2D Janus MGeSiP4 monolayers and demonstrate their great potential applications in nanoelectronic and/or optoelectronic devices. This investigation could stimulate further theoretical and experimental studies on these excellent materials and motivate further explorations of new members of this 2D Janus family.

Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayers.

We discuss and examine the stability, electronic properties, and transport characteristics of asymmetric monolayers XWGeN2 (X = O, S, Se, Te) using ab initio density functional theory. All four monolayers of quintuple-layer atomic Janus XWGeN2 are predicted to be stable and they are all indirect semiconductors in the ground state. When the spin-orbit coupling (SOC) is included, a large spin splitting at the K point is found in XWGeN2 monolayers, particularly, a giant Rashba-type spin splitting is observed around the Γ point in three structures SWGeN2, SeWGeN2, and TeWGeN2. The Rashba parameters in these structures are directionally isotropic along the high-symmetry directions Γ-K and Γ-M and the Rashba constant αR increases as the X element moves from S to Te. TeWGeN2 has the largest Rashba energy up to 37.4 meV (36.6 meV) in the Γ-K (Γ-M) direction. Via the deformation potential method, we calculate the carrier mobility of all four XWGeN2 monolayers. It is found that the electron mobilities of OWGeN2 and SWGeN2 monolayers exceed 200 cm2 V-1 s-1, which are suitable for applications in nanoelectronic devices.

Stark and Zeeman effects on the topological phase and transport properties of topological crystalline insulator thin films.

The fundamental investigation of topological crystalline insulator (TCI) thin films is essential for observing interesting phenomena. In practice, a promising pathway involves the application of electric and magnetic fields to tune the topological phases of TCI thin films. To achieve this, we applied a perpendicular electric field and an in-plane magnetic field to not only tune the Dirac gap of a SnTe(001) thin film and find the phase transition but also to directly connect them with their effects on the group velocity of both massless and massive surface Dirac fermions. The TCI thin film is an inherent insulator due to the hybridization between the front and back surfaces, and it transitions to a semimetal phase at a critical perpendicular electric field due to the Stark effect. Correspondingly, the anisotropic group velocity of the upper (lower) conduction (valence) band decreases (increases) with the electric field at certain momenta. We found that when one of the in-plane Zeeman field components becomes stronger than the intrinsic hybridization potential, the anisotropic Weyl cones with opposite chiralities retrieve at the critical momenta and the corresponding group velocities become zero. Further, the isotropic in-plane Zeeman field leads to rotation of the band structure, as expected, resulting in non-zero group velocities along all directions. Finally, for the sake of completeness, the combined Stark and Zeeman effects are tracked and the results show that the system is an insulator at all fields and the group velocities are altered more than when the individual Stark and Zeeman effects are applied. Our findings may provide interesting physical insights for practical applications in nanoelectronics and spintronics.

Effects of different surface functionalization on the electronic properties and contact types of graphene/functionalized-GeC van der Waals heterostructures.

Constructing vertical heterostructures by placing graphene (Gr) on two-dimensional materials has recently emerged as an effective way to enhance the performance of nanoelectronic and optoelectronic devices. In this work, first principles calculations are employed to explore the structural and electronic properties of Gr/GeC and Gr/functionalized-GeC by H/F/Cl surface functionalization. Our results imply that the electronic properties of the Gr, GeC and all functionalized-GeC monolayers are well preserved in Gr/GeC and Gr/functionalized-GeC heterostructures, and the Gr/GeC heterostructure forms a p-type Schottky contact. Interestingly, we find that the p-type Schottky contact in Gr/GeC can be converted into the n-type one and into an n-type ohmic contact by H/F/Cl surface functionalization to form Gr/functionalized-GeC heterostructures. Furthermore, we find that electric fields and strain engineering can change both the Schottky barrier heights and the contact types of the Gr/functionalized-GeC vdWHs. These findings suggest that Gr/functionalized-GeC heterostructures can be considered as a promising candidate for designing high-performance optoelectronic and nanoelectronic devices.

Electronic and optical properties of a Janus SnSSe monolayer: effects of strain and electric field.

In this paper, detailed investigations of the electronic and optical properties of a Janus SnSSe monolayer under a biaxial strain and electric field using ab initio methods are presented. Our calculations indicate that the Janus SnSSe monolayer is a semiconductor with an indirect band gap larger/lower than that of the SnSe2/SnS2 monolayer. To obtain accurate estimates of the band gap, both Perdew-Burke-Ernzerhof (PBE) and Heyd-Scuseria-Ernzerhof (HSE06) hybrid functionals have been used and the effect of spin-orbit coupling has also been included. While the influence of the electric field on the electronic and optical properties of the Janus SnSSe monolayer is quite weak, biaxial strain plays a key role in controlling these properties. The Janus SnSSe monolayer has a wide absorption spectrum, from visible light to the ultraviolet region. At equilibrium, the maximum absorption coefficient of the monolayer is up to 11.152 × 104 cm-1 in the ultraviolet region and it can be increased by strain engineering. With high absorption intensity in the visible light area and being able to tune the absorbance by strain, the Janus SnSSe monolayer becomes a promising material for applications in optoelectronic devices.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet.

van der Waals heterostructures (vdWHs), obtained by vertically stacking different two-dimensional (2D) layered materials are being considered intensively as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials. Here, we construct the SnSe2/MoS2 vdWH and investigate its electronic and optical properties using first-principles calculations. We find that the band structures of both MoS2 and SnSe2 monolayers are well kept in the SnSe2/MoS2 vdWH because of their weakly interacting features via vdW interaction. The SnSe2/MoS2 vdWH forms a type-I band alignment and exhibits an indirect semiconductor band gap of 0.45 eV. The type-I band alignment makes the SnSe2/MoS2 vdWH a promising material for optoelectronic nanodevices, such as light emitting diodes because of ultra-fast recombination of electrons and holes. Moreover, the band gap and band alignment of the SnSe2/MoS2 vdWH can be tailored by the electric field and the insertion of a graphene sheet. After applying an electric field, type-I to type-II and semiconductor to metal transitions can be achieved in the SnSe2/MoS2 vdWH. Besides, when a graphene sheet is inserted into the SnSe2/MoS2 vdWH to form three stacking types of G/SnSe2/MoS2, SnSe2/G/MoS2 and SnSe2/MoS2/G, the p-type semiconductor of the SnSe2/MoS2 vdWH is converted to an n-type Ohmic contact. These findings provide theoretical guidance for designing future nanoelectronic and optoelectronic devices based on the SnSe2/MoS2 vdWH.

Band alignment and optical features in Janus-MoSeTe/X(OH)2 (X = Ca, Mg) van der Waals heterostructures.

van der Waals heterostructures can be effectively used to enhance the electronic and optical properties and extend the application range of two-dimensional materials. Here, we construct for the first time MoSeTe/X(OH)2 (X = Ca, Mg) heterostructures and investigate their electronic and optical properties as well as the relative orientation of these layers with respect to each other and the effects of an electric field. Our results show that in the MoSeTe/X(OH)2 heterostructures, the Janus MoSeTe monolayer is bonded to the X(OH)2 layer via weak van der Waals forces. Owing to different kinds of chalcogen Se and Te atoms in both sides of Janus MoSeTe, there exist two main stacking types of the MoSeTe/X(OH)2 heterostructures, that are MoSeTe-Se/X(OH)2 and MoSeTe-Te/X(OH)2 heterostructures. Interestingly, the Se- and Te-interface can induce straddling type-II and type-I band alignments. The MoSeTe-Se/X(OH)2 heterostructure exhibits a type-II band alignment, thus endowing it with a potential ability to separate photogenerated electrons and holes. Whereas, the MoSeTe-Te/Ca(OH)2 heterostructure displays a type-I band alignment, which may result in an ultrafast recombination between electrons and holes, making the MoSeTe-Te/Ca(OH)2 heterostructure a suitable material for optoelectronic applications. The MoSeTe/X(OH)2 heterostructures show an isotropic behavior in the low energy region while an anisotropic behaviour in the high photon energy region. The dielectric function of the MoSeTe-Te/Ca(OH)2 heterostructure is high at low photon energy relative to other heterostructures verifying it to have a good optical absorption. Furthermore, the band gap values and band alignment of the MoSeTe/X(OH)2 heterostructures can be modulated by applying an electric field, which induces semiconductor-to-metal and type-I(II) to type-II(I) band alignment. These results demonstrate that the MoSeTe/X(OH)2 heterostructures are promising candidates for optoelectronic and photovoltaic nanodevices.

Autonomous system for rapid field quantification of Escherichia coli in surface waters.

AIMS: The purpose of this work is to present and evaluate the performance of a novel Automatic Lab-in-vial Escherichia coli Remote Tracking technology based on an automated real-time defined substrate approach, implemented in both portable and in situ instruments. METHODS AND RESULTS: We present the fresh water calibration procedure, and assess performance using side-by-side comparison with most probable number (MPN) approaches in terms of accuracy, reproducibility and capability to correctly generate early-warning alerts. Long-term data from an operational in situ deployment at a potential bathing site is presented as well. CONCLUSIONS: Automatic Lab-in-vial Escherichia coli Remote Tracking technology is shown to be an accurate and rapid bacterial quantification technology, capable of autonomous in situ measurements with metrological capabilities comparable to those of an approved laboratory using MPN microplate techniques. SIGNIFICANCE AND IMPACT OF THE STUDY: Rapid quantification of bacterial pollution is a requirement in water quality applications ranging from recreational water use, agriculture and aquaculture to drinking and wastewater treatment. The method and instruments presented in this work should enable fast and accurate bacterial concentration measurements to be performed in a portable or in situ manner, thus simplifying operational logistics, reducing time-to-result delays, and eliminating sample transportation constraints associated with traditional techniques.

Interlayer coupling and electric field tunable electronic properties and Schottky barrier in a graphene/bilayer-GaSe van der Waals heterostructure.

In this work, using density functional theory we investigated systematically the electronic properties and Schottky barrier modulation in a multilayer graphene/bilayer-GaSe heterostructure by varying the interlayer spacing and by applying an external electric field. At the equilibrium state, the graphene is bound to bilayer-GaSe by a weak van der Waals interaction with the interlayer distance d of 3.40 Å with the binding energy per carbon atom of -37.71 meV. The projected band structure of the graphene/bilayer-GaSe heterostructure appears as a combination of each band structure of graphene and bilayer-GaSe. Moreover, a tiny band gap of about 10 meV is opened at the Dirac point in the graphene/bilayer-GaSe heterostructure due to the sublattice symmetry breaking. The band gap opening in graphene makes it suitable for potential applications in nanoelectronic and optoelectronic devices. The graphene/bilayer-GaSe heterostructure forms an n-type Schottky contact with the Schottky barrier height of 0.72 eV at the equilibrium interlayer spacing. Furthermore, a transformation from the n-type to p-type Schottky contact could be performed by decreasing the interlayer distance or by applying an electric field. This transformation is observed when the interlayer distance is smaller than 3.30 Å, or when the applied positive external electric field is larger than 0.0125 V Å-1. These results are very important for designing new electronic Schottky devices based on graphene and other 2D semiconductors such as a graphene/bilayer-GaSe heterostructure.

Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field.

Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials. In this work, by means of first principles calculations, we investigate systematically the structural and electronic properties of six different stacking configurations of a Si/GaSe heterostructure. The effect of biaxial strain and electric field on the electronic properties of the most energetically stable configuration of the Si/GaSe heterostructure has also been discussed. At the equilibrium state, the electronic properties of the Si/GaSe heterostructure in all its stacking configurations are well kept as compared with that of single layers owing to their weak van der Waals interactions. Interestingly, we find that a sizable band gap is opened at the Dirac K point of silicene in the Si/GaSe heterostructure, which could be further controlled by biaxial strain or electric field. These findings open up a possibility for designing silicene-based electronic devices, which exhibit a controllable band gap. Furthermore, the Si/GaSe heterostructure forms an n-type Schottky contact with a small Schottky barrier height of 0.23 eV. A transformation from the n-type Schottky contact to a p-type one, or from the Schottky contact to an ohmic contact may occur in the Si/GaSe heterostructure when strain or an electric field is applied.

[Fixed drug eruption to clarithromycin: The importance of challenge tests in diagnosis]. / Érythème pigmenté fixe à la clarithromycine : importance des tests de provocation pour le diagnostic.

BACKGROUND: Determining the substance responsible for recurrent fixed drug eruption (FDE) may be difficult in the case of patients on multiple medication. Allergy testing may prove invaluable in such situations, as we demonstrate herein with an original case. PATIENTS AND METHODS: A 49-year-old man presented a rash on the seventh day of treatment with esomeprazole, clarithromycin and amoxicillin prescribed for gastritis involving Helicobacter pylori. The condition regressed spontaneously within a few days, but left three areas of hyperpigmentation. The patient subsequently reported four further episodes consisting of stereotypical reactivation in the areas of the three initial lesions and occurring 24hours after use of clarithromycin (2 episodes) and amoxicillin (2 episodes). The patient resumed proton pump inhibitor therapy (esomeprazole) without incident. Based on history taking, an initial diagnosis was made of multiple fixed drug eruption involving amoxicillin and clarithromycin. The initial skin allergy investigations were negative (patch-tests for amoxicillin and clarithromycin on healthy skin on the patient's back and on the affected area). After discussion, we decided to reintroduce the suspected drugs in succession. Beginning with clarithromycin, 12h after a single dose of 250mg, we noted an erythematous reaction on the pigmented areas, together with a burning sensation. In an identical challenge test with amoxicillin (500mg), the latter drug was perfectly well tolerated, ruling out the diagnosis of FDE to amoxicillin and thus the diagnosis of multiple FDE suggested by the patient history. DISCUSSION: FDEs to macrolides are rare, and herein we report a new case. Our observation confirms the diagnostic value of challenge tests in FDE. These tests should only be performed in the event of non-severe FDE, in other words not in bullous or systemic reactions, and they often constitute the only diagnostic approach possible, since skin tests are rarely positive during investigation for FDE.

Investigation of falsified documents via direct analyte-probed nanoextraction coupled to nanospray mass spectrometry, fluorescence microscopy, and Raman spectroscopy.

Microscopy with direct analyte-probed nanoextraction coupled to nanospray ionization mass spectrometry (DAPNe-NSI-MS) is a direct extraction technique that extracts ultra-trace amounts of analyte. It has been proven to extract ink from documents with little to no physical or chemical footprint. In this study, DAPNe has been coupled to Raman spectroscopy, fluorescence microscopy, and NSI-MS to determine if an ink entry from a document was falsified. A handwritten number was altered using a different ink pen to test if the aforementioned techniques could discriminate the original number from the altered number, qualitatively and/or quantitatively. Chemical species from part of the original number, altered number, and a point at which both inks intersect were successfully differentiated by all techniques when using different pens. DAPNe coupled to fluorescence microscopy and Raman spectroscopy was not able to discriminate the forged ink entry when the exact same pen was used to modify the text (due to the same ink formula). However, DAPNe-NSI-MS successfully discerned that the pen was dispensed on different days by quantitating the oxidation process.

[Diversity of cutaneous bacteria decreases inflammation]. / Plus il y a de bactéries différentes, moins il y a d'inflammation : la révolution microbiotique.

Human microbiota includes all microorganisms, saprophytes and pathogens that colonize our bodies. Recent advances in metagenomic analysis techniques have expanded our knowledge of the microbiota and fundamentally changed our view of its relationships with the immune system. The commensal flora appears to be essential to the development of the immune system, and the diversity of the microbiota is correlated with good health status of individuals. These findings open up new conceptual and therapeutic approaches in chronic inflammatory diseases.