Highly Stable Bulk Perovskite for Blue LEDs with Anion-Exchange Method.

To date, the light emitting diode (LED) based halide perovskite was rapidly developed due to the outstanding property of perovskite materials. However, the blue perovskite LEDs based on the bulk halide perovskites have been rarely researched and showed low efficiencies. The bulk blue perovskite LEDs suffered from insufficient coverage on the substrate due to the low solubility of the inorganic Cl sources or damaged by the structural instability with participation of organic cations. Here, we show the new method of fabricating stable inorganic bulk blue perovskite LEDs with the anion exchange approach to avoid use of insoluble Cl precursors. The devices showed nice operational spectral stability at the desired blue emission peak. The bulk perovskite blue LEDs showed a maximum luminance of 1468 and 494 cd m-2 for the 490 and 470 nm emission peaks, respectively.

Fluorine Functionalized Graphene Nano Platelets for Highly Stable Inverted Perovskite Solar Cells.

Edged-selectively fluorine (F) functionalized graphene nanoplatelets (EFGnPs-F) with a p-i-n structure of perovskite solar cells achieved 82% stability relative to initial performance over 30 days of air exposure without encapsulation. The enhanced stability stems from F-substitution on EFGnPs; fluorocarbons such as polytetrafluoroethylene are well-known for their superhydrophobic properties and being impervious to chemical degradation. These hydrophobic moieties tightly protect perovskite layers from air degradation. To directly compare the effect of similar hydrophilic graphene layers, edge-selectively hydrogen functionalized graphene nanoplatelet (EFGnPs-H) treated devices were tested under the same conditions. Like the pristine MAPbI3 perovskite devices, EFGnPs-H treated devices were completely degraded after 10 days. The hydrophobic properties of EFGnPs-F were characterized by contact angle measurement. The test results showed great water repellency compared to pristine perovskite films or EFGnPs-H coated films. This resulted in highly air-stable p-i-n perovskite solar cells.

Enhancing Performance and Stability of Sn-Pb Perovskite Solar Cells with Oriented Phenyl-C61-Butyric Acid Methyl Ester Layer via High-Temperature Annealing.

Phenyl-C61-butyric acid methyl ester (PCBM) can be used as a passivation material in perovskite solar cells (PeSCs) in order to reduce the trap site of the perovskite. Here, we show that a thick PCBM layer can form a smoother surface on the SnO2 substrate, improving the grain size and reducing the microstrain of the perovskite. High-temperature annealing treatment of PCBM layer not only increases its solvent resistance to perovskite precursor or antisolvent, but also enhances its molecular alignment, resulting in improved conductivity as an electron transport layer. High-temperature annealed PCBM (HT-PCBM) effectively minimizes trap-assisted nonradiative recombination by reducing trap density in perovskite and improving the electrical properties at the interface between SnO2 and perovskite layers. This HT-PCBM process significantly enhances the performance of the PeSCs, including the open-circuit voltage (VOC) from 0.39 to 0.77 V, fill factor from 52% to 65%, and power conversion efficiency (PCE) from 6.03% to 15.50%, representing substantial improvements compared to devices without PCBM. This PCE is the highest efficiency among conventional (n-i-p) Sn-Pb PeSCs reported to date. Moreover, passivating the trap sites of SnO2 and separating the interface between the Sn-containing perovskite and the substrate effectively have improved the stability of the Sn-Pb perovskite in the n-i-p structure. The optimized best device with HT-PCBM has maintained an efficiency of over 90% for more than 300 h at 85 °C and 5000 h at room temperature in a glovebox atmosphere.

Synergistic Buried Interface Regulation of Tin-Lead Perovskite Solar Cells via Co-Self-Assembled Monolayers.

Tin-lead (Sn-Pb) perovskite solar cells (PSCs) hold considerable potential for achieving efficiencies near the Shockley-Queisser (S-Q) limit. Notably, the inverted structure stands as the preferred fabrication method for the most efficient Sn-Pb PSCs. In this regard, it is imperative to implement a strategic customization of the hole selective layer to facilitate carrier extraction and refine the quality of perovskite films, which requires effective hole selectivity and favorable interactions with Sn-Pb perovskites. Herein, we propose the development of Co-Self-Assembled Monolayers (Co-SAM) by integrating both [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and glycine at the buried contacts. The one-step deposition process employed in the fabrication of the Co-SAM ensures uniform coverage, resulting in a homogeneous surface potential. This is attributed to the molecular interactions occurring between 2PACz and glycine in the processing solution. Furthermore, the amine (-NH2) and ammonium (-NH3+) groups in glycine effectively passivate Sn4+ defects at the buried interface of Sn-Pb perovskite films, even under thermal stress. Consequently, the synergistic buried interface regulation of Co-SAM leads to a power conversion efficiency (PCE) of 23.46%, which outperforms devices modified with 2PACz or glycine alone. The Co-SAM-modified Sn-Pb PSC demonstrates enhanced thermal stability, maintaining 88% of its initial PCE under 65 °C thermal stress for 590 h.

High-Performance Perovskite Light-Emitting Diodes with Surface Passivation of CsPbBrxI3-x Nanocrystals via Antisolvent-Triggered Ion-Exchange.

Inorganic lead halide perovskite nanocrystals (PeNCs) have intensively drawn attention as efficient light-emitting materials for optoelectronic applications due to their fine optoelectronic properties with a high photoluminescence quantum yield and easily tunable saturated emission color. However, the poor stability of the red-emitting PeNCs has become an obstacle because of the uncontrollable iodine substitution from the PeNCs due to weak Pb-I bonding. In this work, we have demonstrated a ligand-mediated post-treatment (LMPT) method using a halide ion-pair ligand, tridodecylmethyl ammonium iodide (TrDAI), for the air stable and high-quality red-emitting PeNCs. Through the LMPT method, the optoelectronic properties of red-emitting PeNCs are dramatically improved resulting in a PLQY of 88.7% at 637 ± 2 nm emission with an increased carrier lifetime from 20.77 to 31.52 ns. We achieve highly efficient red perovskite light-emitting diodes exhibiting a maximum current efficiency of 7.69 cd A-1 and an external quantum efficiency of 6.36% at 637 ± 2 nm electroluminescence emission with a sharp full-width at half maximum of 31 nm.