2,2'-Bipyridyl-4,4'-Dicarboxylic Acid Modified Buried Interface of High-Performance Perovskite Solar Cells.

The regulation of interfaces remains a critical and challenging aspect in the pursuit of highly efficient and stable perovskite solar cells (PSCs). Here, 2,2'-bipyridyl-4,4'-dicarboxylic acid (HBPDC) is incorporated as an interfacial layer between SnO2 and perovskite layers in PSCs. The two carboxylic acid moieties on HBPDC bind to SnO2 through esterification, while its nitrogen atoms, possessing lone electron pairs, interact with uncoordinated lead (Pb2+) atoms through Lewis acid-base interactions. This dual functionality enables simultaneous passivation of surface defects on both the SnO2 and buried perovskite layers. In addition, the electron-deficient nature of HBPDC enhances interfacial energy band alignment and facilitates electron transfer from the perovskite to SnO2. Furthermore, the incorporation of HBPDC strengthens the interfacial adhesion, improving mechanical reliability. As a result, the PSCs exhibited an impressive power conversion efficiency (PCE) of 25.41 % under standard AM 1.5G conditions, along with remarkable environmental stability.

In-Situ Cyclized Polyacrylonitrile as an Electron Selective Layer for n-i-p Perovskite Solar Cell with Enhanced Efficiency and Stability.

In situ cyclized polyacrylonitrile (CPAN) is developed to replace n-type metal oxide semiconductors (TiO2 or SnO2) as an electron selective layer (ESL) for highly efficient and stable n-i-p perovskite solar cells (PSCs). The CPAN layer is fabricated via facile in situ cyclization reaction of polyacrylonitrile (PAN) coated on a conducting glass substrate. The CPAN layer is robust and insoluble in common solvents, and possesses n-type semiconductor properties with a high electron mobility of 4.13×10-3 cm2 V-1 s-1. With the CPAN as an ESL, the PSC affords a power conversion efficiency (PCE) of 23.12 %, which is the highest for the n-i-p PSCs with organic ESLs. Moreover, the device with the CPAN layer holds superior operational stability, maintaining over 90 % of their initial efficiency after 500 h continuous light soaking. These results confirm that the CPAN layer would be a desirable low-cost and efficient ESL for n-i-p PSCs and other photoelectronic devices with high performance and stability.

Vacuum-Assisted Thermal Annealing of CsPbI3 for Highly Stable and Efficient Inorganic Perovskite Solar Cells.

Inorganic cesium lead iodide perovskite CsPbI3 is attracting great attention as a light absorber for single or multi-junction photovoltaics due to its outstanding thermal stability and proper band gap. However, the device performance of CsPbI3 -based perovskite solar cells (PSCs) is limited by the unsatisfactory crystal quality and thus severe non-radiative recombination. Here, vacuum-assisted thermal annealing (VATA) is demonstrated as an effective approach for controlling the morphology and crystallinity of the CsPbI3 perovskite films formed from the precursors of PbI2 , CsI, and dimethylammonium iodide (DMAI). By this method, a large-area and high-quality CsPbI3 film is obtained, exhibiting a much reduced trap-state density with prolonged charge lifetime. Consequently, the solar cell efficiency is raised from 17.26 to 20.06 %, along with enhanced stability. The VATA would be an effective approach for fabricating high-performance thin-film CsPbI3 perovskite optoelectronics.

Facile Dimension Transformation Strategy for Fabrication of Efficient and Stable CsPbI3 Perovskite Solar Cells.

All-inorganic cesium lead triiodide (CsPbI3) perovskite has received increasing attention due to its intrinsic thermal stability and suitable band gap for photovoltaic applications. However, it is difficult to deposit high-quality pure-phase CsPbI3 films using CsI and PbI2 as precursors due to the rapid nucleation and crystal growth by the solution coating method. Here, a simple cation-exchange approach is employed to fabricate all-inorganic 3D CsPbI3 perovskite, where 1D ethylammonium lead (EAPbI3) perovskite is first solution-deposited and then transformed to 3D CsPbI3 via ion exchange between EA+ and Cs+ during thermal annealing. The large space between the PbI3- skeletons in 1D EAPbI3 favors the cation interdiffusion and exchange for the formation of pure-phase 3D CsPbI3 with full compactness and high crystallinity and orientation. The resulting CsPbI3 film exhibits a low trap density of state and high charge mobility, and the perovskite solar cell shows a power-conversion efficiency of 18.2% with enhanced stability. This strategy provides an alternative and promising fabrication route for the fabrication of high-quality all-inorganic perovskite devices.