Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications.

Exploring multiple states based on the domain wall (DW) position has garnered increased attention for in-memory computing applications, particularly focusing on the utilization of spin-orbit torque (SOT) to drive DW motion. However, devices relying on the DW position require efficient DW pinning. Here, we achieve granular magnetization switching by incorporating an HfOx insertion layer between the Co/Ti interface. This corresponds to a transition in the switching model from the DW motion to DW nucleation. Compared to the conventional Pt/Co/Ti structure, incorporation of the HfOx layer results in an enhanced SOT efficiency and a lower switching current density. We also realized stable multistate storage and synaptic plasticity by applying pulse current in the Pt/Co/HfOx/Ti device. The simulation of artificial neural networks (ANN) based on the device can perform digital recognition tasks with an accuracy rate of 91%. These results identify that DW nucleation with a Pt/Co/HfOx/Ti based device has potential applications in multistate storage and ANN.

Electric field control of spin-orbit torque in annealed Ta/CoFeB/HfOxheterostructures via interfacial oxidation modulation.

Electric field control of spin-orbit torque (SOT) exhibits promising potential in advanced spintronic devices through interfacial modulation. In this work, we investigate the influence of electric field and interfacial oxidation on SOT efficiency in annealed Ta/CoFeB/HfOxheterostructures. By varying annealing temperatures, the damping-like SOT efficiency reaches its peak at the annealing temperature of 320 °C, with an 80% field-free magnetization switching ratio induced by SOT having been demonstrated. This enhancement is ascribed to the annealing-induced modulation of oxygen ion migration at the CoFeB/HfOxinterface. By applying voltages across the Ta/CoFeB/HfOxheterostructures, which drives the O2‒migration across the interface, a reversible, bipolar, and non-volatile modulation of SOT efficiency was observed. The collective influence of annealing temperature and electric field effects on SOT carried out in this work provides an effective approach into facilitating the optimization and control of SOT in spintronic devices.

A multilevel electrolyte-gated artificial synapse based on ruthenium-doped cobalt ferrite.

Synaptic devices that emulate synchronized memory and processing are considered the core components of neuromorphic computing systems for the low-power implementation of artificial intelligence. In this regard, electrolyte-gated transistors (EGTs) have gained much scientific attention, having a similar working mechanism as the biological synapses. Moreover, compared to a traditional solid-state gate dielectric, the liquid dielectric has the key advantage of inducing extremely large modulation of carrier density while overcoming the problem of electric pinholes, that typically occurs when using large-area films gated through ultra-thin solid dielectrics. Herein we demonstrate a three-terminal synaptic transistor based on ruthenium-doped cobalt ferrite (CRFO) thin films by electrolyte gating. In the CRFO-based EGT, we have obtained multilevel non-volatile conductance states for analog computing and high-density storage. Furthermore, the proposed synaptic transistor exhibited essential synaptic behavior, including spike amplitude-dependent plasticity, spike duration-dependent plasticity, long-term potentiation, and long-term depression successfully by applying electrical pulses. This study can motivate the development of advanced neuromorphic devices that leverage simultaneous modulation of electrical and magnetic properties in the same device and show a new direction to synaptic electronics.

Spin-based magnetic random-access memory for high-performance computing.

Spin-based memory technology is now available as embedded magnetic random access memory (eMRAM) for fast, high-density and non-volatile memory products, which can significantly boost computing performance and ignite the development of new computing architectures.

Clinical Observations on the Combined Use of Hyperbaric Oxygenation and Conventional Medications in the Management of Type 2 Diabetes Mellitus Concurrent With Sudden Deafness.

Objective: The aim of this study is to investigate the effectiveness of combining hyperbaric oxygen therapy (HBOT) with conventional pharmacological interventions in the management of type 2 diabetes mellitus concurrent with sudden deafness. Methods: A cohort of 96 patients diagnosed with sudden deafness was enrolled and subsequently randomized into 2 groups: a treatment group (n = 50) and a control group (n = 46). The control group received standard conventional treatment aimed at enhancing microcirculation and nutritional support for nerves, while the treatment group underwent conventional symptomatic treatment coupled with HBOT. The evaluation encompassed the monitoring of blood glucose and blood lipid levels, clinical efficacy, and absolute hearing threshold improvement in both groups. Results: Following the intervention, noteworthy reductions in blood glucose and blood lipid levels were observed in both groups compared to their respective pretreatment values. Furthermore, posttreatment values in the treatment group exhibited a statistically significant decrease in comparison to those in the control group (P < .05). On assessing clinical efficacy posttreatment, the treatment group demonstrated a significantly higher efficacy than the control group (P < .05). In addition, the absolute hearing thresholds in both groups exhibited a significant decrease posttreatment compared to baseline values. Notably, the treatment group displayed a statistically significant reduction in absolute hearing thresholds compared to the control group posttreatment (P < .05). Conclusion: The combined therapeutic approach utilizing hyperbaric oxygen exhibits effectiveness in mitigating auditory impairment among individuals manifesting sudden deafness concomitant with type 2 diabetes mellitus. Furthermore, this treatment approach is associated with a concurrent reduction in blood glucose and blood lipid levels.

NIR and magnetism dual-response multi-core magnetic vortex nanoflowers for boosting magneto-photothermal cancer therapy.

Due to the relatively low efficiency of magnetic hyperthermia and photothermal conversion, it is rather challenging for magneto-photothermal nanoagents to be used as an effective treatment during tumor hyperthermal therapy. The advancement of magnetic nanoparticles exhibiting a vortex-domain structure holds great promise as a viable strategy to enhance the application performance of conventional magnetic nanoparticles while retaining their inherent biocompatibility. Here, we report the development of Mn0.5Zn0.5Fe2O4 nanoflowers with ellipsoidal magnetic cores, and show them as effective nanoagents for magneto-photothermal synergistic therapy. Comparative studies were conducted on the heating performance of anisometric Mn0.5Zn0.5Fe2O4 (MZF) nanoparticles, including nanocubes (MZF-C), hollow spheres (MZF-HS), nanoflowers consisting of ellipsoidal magnetic cores (MZF-NFE), and nanoflowers consisting of needle-like magnetic cores (MZF-NFN). MZF-NFE exhibits an intrinsic loss parameter (ILP) of up to 15.3 N h m2 kg-1, which is better than that of commercial equivalents. Micromagnetic simulations reveal the magnetization configurations and reversal characteristics of the various MZF shapes. Additionally, all nanostructures displayed a considerable photothermal conversion efficiency rate of more than 18%. Our results demonstrated that by combining the dual exposure of MHT and PTT for hyperthermia treatments induced by MZF-NFE, BT549, MCF-7, and 4T1 cell viability can be significantly decreased by ∼95.7% in vitro.

Ultralow Energy Domain Wall Device for Spin-Based Neuromorphic Computing.

Neuromorphic computing (NC) is gaining wide acceptance as a potential technology to achieve low-power intelligent devices. To realize NC, researchers investigate various types of synthetic neurons and synaptic devices, such as memristors and spintronic devices. In comparison, spintronics-based neurons and synapses have potentially higher endurance. However, for realizing low-power devices, domain wall (DW) devices that show DW motion at low energies─typically below pJ/bit─are favored. Here, we demonstrate DW motion at current densities as low as 106 A/m2 by engineering the ß-W spin-orbit coupling (SOC) material. With our design, we achieve ultralow pinning fields and current density reduction by a factor of 104. The energy required to move the DW by a distance of about 18.6 µm is 0.4 fJ, which translates into the energy consumption of 27 aJ/bit for a bit-length of 1 µm. With a meander DW device configuration, we have established a controlled DW motion for synapse applications and have shown the direction to make ultralow energy spin-based neuromorphic elements.

Diode Characteristics in Magnetic Domain Wall Devices via Geometrical Pinning for Neuromorphic Computing.

Neuromorphic computing (NC) is considered a potential vehicle for implementing energy-efficient artificial intelligence. To realize NC, several technologies are being investigated. Among them, the spin-orbit torque (SOT)-driven domain wall (DW) devices are one of the potential candidates. Researchers have proposed different device designs to achieve neurons and synapses, the building blocks of NC. However, the experimental realization of DW device-based NC is only at the primeval stage. Here, we have studied pine-tree DW devices, based on the Laplace pressure on the elastic DWs, for achieving synaptic functionalities and diode-like characteristics. We demonstrate an asymmetric pinning strength for DW motion in two opposite directions to show the potential of these devices as DW diodes. We have used micromagnetic simulations to understand the experimental findings and to estimate the Laplace pressure for various design parameters. The study provides a strategy to fabricate a multifunctional DW device, exhibiting synaptic properties and diode characteristics.

Hollow spherical Mn0.5Zn0.5Fe2O4 nanoparticles with a magnetic vortex configuration for enhanced magnetic hyperthermia efficacy.

Conventional magnetic nanoagents in cancer hyperthermia therapy suffer from a low magnetic heating efficiency. To address this issue, researchers have pursued magnetic nanoparticles with topological magnetic domain structures, such as the vortex-domain structure, to enhance the magnetic heating performance of conventional nanoparticles while maintaining excellent biocompatibility. In this study, we synthesized hollow spherical Mn0.5Zn0.5Fe2O4 (MZF-HS) nanoparticles using a straightforward solvothermal method, yielding samples with an average outer diameter of approximately 350 nm and an average inner diameter of about 220 nm. The heating efficiency of the nanoparticles was experimentally verified, and the specific absorption rate (SAR) value of the hollow MZF was found to be approximately 1.5 times that of solid MZF. The enhanced heating performance is attributed to the vortex states in the hollow MZF structure as validated with micromagnetic simulation studies. In vitro studies demonstrated the lower cell viability of breast cancer cells (MCF-7, BT549, and 4T1) after MHT in the presence of MZF-HS. The synthesized MZF caused 51% cell death after MHT, while samples of MZF-HS resulted in 77% cell death. Our findings reveal that magnetic particles with a vortex state demonstrate superior heating efficiency, highlighting the potential of hollow spherical particles as effective heat generators for MHT applications.

Spin Reflection-Induced Field-Free Magnetization Switching in Perpendicularly Magnetized MgO/Pt/Co Heterostructures.

Field-free magnetization switching is critical towards practical, integrated spin-orbit torque (SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our work proposes a technique to modulate the spin reflection and spin density of states within a heavy-metal Pt through interfacing with a dielectric MgO layer. We demonstrate tunability of the effective out-of-plane spin torque acting on the ferromagnetic Co layer, enabling current-induced SOT magnetization switching without the assistance of an external magnetic field. The influence of the MgO layer thickness on effective SOT efficiency shows saturation at 4 nm, while up to 80% of field-free magnetization switching ratio is achieved with the MgO between 5 and 8 nm. We analyze and attribute the complex interaction to spin reflection at the dielectric/heavy metal interface and spin scattering within the dielectric medium due to interfacial electric fields. Further, through substituting the dielectric with Ti or Pt, we confirm that the MgO layer is indeed responsible for the observed field-free magnetization switching mechanism.

Spin orbit torques induced magnetization reversal through asymmetric domain wall propagation in Ta/CoFeB/MgO structures.

The magnetization reversal induced by spin orbit torques in the presence of Dzyaloshinskii-Moriya interaction (DMI) in perpendicularly magnetized Ta/CoFeB/MgO structures were investigated by using a combination of Anomalous Hall effect measurement and Kerr effect microscopy techniques. By analyzing the in-plane field dependent spin torque efficiency measurements, an effective field value for the DMI of ~300 Oe was obtained, which plays a key role to stabilize Néel walls in the film stack. Kerr imaging reveals that the current-induced reversal under small and medium in-plane field was mediated by domain nucleation at the edge of the Hall bar, followed by asymmetric domain wall (DW) propagation. However, as the in-plane field strength increases, an isotropic DW expansion was observed before reaching complete reversal. Micromagnetic simulations of the DW structure in the CoFeB layer suggest that the DW configuration under the combined effect of the DMI and the external field is responsible for the various DW propagation behaviors.

Effects of Ru and Ag cap layers on microstructure and magnetic properties of FePt ultrathin films.

The effects of Ru and Ag cap layers on the microstructure and magnetic properties of the FePt ultrathin films have been investigated. The results indicate that i) The Ag cap layer segregates from the FePt/Ag bilayer, lowers the FePt ordering temperature, promotes the FePt thin films to form island structure, and enhances the coercivity; ii) The Ru cap layer increases the FePt ordering temperature, helps to maintain smooth continuous structure film, and restrains the FePt (001) orientation and perpendicular magnetic anisotropy (PMA). The effects become more pronounced for the 3-nm-thick FePt thin films. The effects can be mainly attributed to the different melting point and thermal expansion stress between the cap layer and FePt thin films.