RESUMEN
The recent report of a p-type graphene(Gr)/carbon-nanotube(CNT) barristor facilitates the application of graphene barristors in the fabrication of complementary logic devices. Here, a complementary inverter is presented that combines a p-type Gr/CNT barristor with a n-type Gr/MoS2 barristor, and its characteristics are reported. A sub-nW (~0.2 nW) low-power inverter is demonstrated with a moderate gain of 2.5 at an equivalent oxide thickness (EOT) of ~15 nm. Compared to inverters based on field-effect transistors, the sub-nW power consumption was achieved at a much larger EOT, which was attributed to the excellent switching characteristics of Gr barristors.
RESUMEN
The controlled synthesis of single-walled carbon nanotubes (SWNTs) is essential for their industrial application. This study investigates the synthesis yield of SWNTs, which depends on the positions of the samples on a horizontal chemical vapor deposition (CVD) system. Methane and Fe thin films were used as the feedstock and catalyst for SWNTs synthesis, respectively. A high-resolution scanning electron microscope was used to examine the synthesis yield variation of the SWNTs along the axial distance of the reactor. The morphology and crystallinity of the fabricated SWNTs were evaluated by atomic force microscopy and Raman spectroscopy, respectively. We observed that the highest synthesis yield of the SWNTs was obtained in the rear region of the horizontal reactor, and not the central region. These results can be applied to the synthesis of various low-dimensional nanomaterials, such as semiconducting nanowires and transition metal dichalcogenides, especially when a horizontal CVD chamber is used.
RESUMEN
We investigate the early stage of carbon nanotube (CNTs) growth on Inconel 600 to address the effect of pretreatments such as annealing and plasma pretreatment on growth behavior. In addition, we compare the growth results to other Ni-based superalloys including Invar 42 and Hastelloy C276. The growth substrates were prepared using mechanical polish, thermal annealing and plasma pretreatment. The air annealing was performed at 725 °C for 10 min and plasma pretreatment was subsequently undergone with 10.5 W at 500 °C for 30 min. The annealed and plasma-pretreated substrates exhibited different surface morphologies on the surface and enhanced growth behavior of CNT was observed from the region of particulate surface. The optimized growth temperature, which produces the highest CNT height, was determined at 525 °C for Ni and Inconel 600 and 625 °C for Invar 42 and Hastelloy C276 substrates. The difference of optimal growth temperature is expected to the existence of high temperature elements such as Mn or Mo in the alloys. X-ray diffraction spectroscopy revealed that the formation of roughened oxide layers caused by the pretreatments would promote the nucleation and growth of the CNTs.
RESUMEN
Zinc oxide (ZnO) nanomaterials were efficiently synthesized using a microwave plasma torch system at atmospheric pressure. The Zn powder was passed through a microwave plasma region, in which it melted and vaporized. Tetrapod-type ZnO nanomaterials with a diameter of 29.8 ± 8.0 nm were synthesized using a high-purity O2/N2 mixed gas. In particular, ZnO nanowires with a diameter of 109.5 ± 8.0 nm and a length of 5-6 µm were produced using an inexpensive compressed air as a microwave plasma gas. It was confirmed that the nanowires synthesized using the compressed air showed higher light absorption in the visible region than the tetrapod-type ZnO. In addition, the redshifts in the absorption peak and photoluminescence peak were observed from 370.6 to 375.2 nm and 380 to 390 nm, respectively. The obtained results can be explained by the change of energy levels due to the defects in the ZnO nanowires such as vacancies and interstitials of Zn and oxygen. Finally, we can conclude that cost-effective compressed air is appropriate not only for the synthesis of ZnO nanowire, but also the enlargement of optical absorption and emission range.