High-Speed Modulation of Polarized Thermal Radiation from an On-Chip Aligned Carbon Nanotube Film.

Spectroscopic analysis with polarized light has been widely used to investigate molecular structure and material behavior. A broadband polarized light source that can be switched on and off at a high speed is indispensable for reading faint signals, but such a source has not been developed. Here, using aligned carbon nanotube (CNT) films, we have developed broadband thermal emitters of polarized infrared radiation with switching speeds of ≲20 MHz. We found that the switching speed depends on whether the electrical current is parallel or perpendicular to the CNT alignment direction with a significantly higher speed achieved in the parallel case. Together with detailed theoretical simulations, our experimental results demonstrate that the contact thermal conductance to the substrate and the conductance to the electrodes are important factors that determine the switching speed. These emitters can lead to advanced spectroscopic analysis techniques with polarized radiation.

Transition from Diffusive to Superdiffusive Transport in Carbon Nanotube Networks via Nematic Order Control.

The one-dimensional confinement of quasiparticles in individual carbon nanotubes (CNTs) leads to extremely anisotropic electronic and optical properties. In a macroscopic ensemble of randomly oriented CNTs, this anisotropy disappears together with other properties that make them attractive for certain device applications. The question however remains if not only anisotropy but also other types of behaviors are suppressed by disorder. Here, we compare the dynamics of quasiparticles under strong electric fields in aligned and random CNT networks using a combination of terahertz emission and photocurrent experiments and out-of-equilibrium numerical simulations. We find that the degree of alignment strongly influences the excited quasiparticles' dynamics, rerouting the thermalization pathways. This is, in particular, evidenced in the high-energy, high-momentum electronic population (probed through the formation of low energy excitons via exciton impact ionization) and the transport regime evolving from diffusive to superdiffusive.

Creating a near-perfect circularly polarized terahertz beam through the nonreciprocity of a magnetoplasma.

Compared to other parts of the electromagnetic spectrum, the terahertz frequency range lacks efficient polarization manipulation techniques, which is impeding the proliferation of terahertz technology. In this work, we demonstrate a tunable and broadband linear-to-circular polarization converter based on an InSb plate containing a free-carrier magnetoplasma. In a wide spectral region (∼ 0.45 THz), the magnetoplasma selectively absorbs one circularly polarized mode due to electron cyclotron resonance and also reflects it at the edges of the absorption band. Both effects are nonreciprocal and contribute to form a near-zero transmission band with a high isolation of -36 dB, resulting in the output of a near-perfect circularly polarized terahertz wave for an incident linearly polarized beam. The near-zero transmission band is tunable with magnetic field to cover a wide frequency range from 0.3 to 4.8 THz.

Phonon-Assisted Intertube Electronic Transport in an Armchair Carbon Nanotube Film.

The electrical conductivity of a macroscopic assembly of nanomaterials is determined through a complex interplay of electronic transport within and between constituent nano-objects. Phonons play dual roles in this situation: their increased populations tend to reduce the conductivity via electron scattering, while they can boost the conductivity by assisting electrons to propagate through the potential-energy landscape. We identified a phonon-assisted coherent electron transport process between neighboring nanotubes in temperature-dependent conductivity measurements on a macroscopic film of armchair single-wall carbon nanotubes. Through atomistic modeling of electronic states and calculations of both electronic and phonon-assisted junction conductances, we conclude that phonon-assisted conductance is the dominant mechanism for observed high-temperature transport in armchair carbon nanotubes. The unambiguous manifestation of coherent intertube dynamics proves a single-chirality armchair nanotube film to be a unique macroscopic solid-state ensemble of nano-objects promising for the development of room-temperature coherent electronic devices.

Dicke-Cooperativity-Assisted Ultrastrong Coupling Enhancement in Terahertz Metasurfaces.

A system of N two-level atoms cooperatively interacting with a photonic field can be described as a single giant atom coupled to the field with interaction strength ∝N. This enhancement, known as Dicke cooperativity in quantum optics, has recently become an indispensable element in quantum information technology. Here, we extend the coupling beyond the standard light-matter interaction paradigm, enhancing Dicke cooperativity in a terahertz metasurface with N meta-atoms. The cooperative enhancement is manifested through the hybridization of the localized surface plasmon resonance in individual meta-atoms and surface lattice resonance due to the periodic array. Furthermore, through engineering of the capacitive split-gap in the meta-atoms, we were able to enhance the coupling rate into the ultrastrong coupling regime by a factor of N. Our strategy can serve as a new platform for demonstrating effective control of fermionic systems by weak pumping, superradiant emission, and ultrasensitive sensing of molecules.

Magnetic Control of Soft Chiral Phonons in PbTe.

PbTe crystals have a soft transverse optical phonon mode in the terahertz frequency range, which is known to efficiently decay into heat-carrying acoustic phonons, resulting in anomalously low thermal conductivity. Here, we studied this phonon via polarization-dependent terahertz spectroscopy. We observed softening of this mode with decreasing temperature, indicative of incipient ferroelectricity, which we explain through a model including strong anharmonicity with a quartic displacement term. In magnetic fields up to 25 T, the phonon mode splits into two modes with opposite handedness, exhibiting circular dichroism. Their frequencies display Zeeman splitting together with an overall diamagnetic shift with increasing magnetic field. Using a group-theoretical approach, we demonstrate that these observations are the result of magnetic field-induced morphic changes in the crystal symmetries through the Lorentz force exerted on the lattice ions. Thus, our Letter reveals a novel process of controlling phonon properties in a soft ionic lattice by a strong magnetic field.

Tunable ultrasharp terahertz plasma edge in a lightly doped narrow-gap semiconductor.

Plasma edges in metals typically occur in the visible range, producing characteristic colors of metals. In a lightly doped semiconductor, the plasma edge can occur in the terahertz (THz) frequency range. Due to low scattering rates and variable electron densities in semiconductors, such THz plasma edges can be extremely sharp and greatly tunable. Here, we show that an ultrasharp THz plasma edge exists in a lightly n-doped InSb crystal with a record-high transmittance slope of 80 dB/THz. The frequency at which this sharp edge happens can be readily tuned by changing the temperature, electron density, scattering rate, and sample thickness. The edge frequency exhibited a surprising increase with decreasing temperature below 15 K, which we explain as a result of a weak-to-strong transition in the scattering rate, going from ωτ  ≫ 1 to ωτ âˆ¼ 1. These results indicate that doped narrow-gap semiconductors provide a versatile platform for manipulating THz waves in a controllable manner, especially as a high-pass filter with an unprecedented on/off ratio.

Groove-Assisted Global Spontaneous Alignment of Carbon Nanotubes in Vacuum Filtration.

Ever since the discovery of carbon nanotubes (CNTs), it has long been a challenging goal to create macroscopically ordered assemblies, or crystals, of CNTs that preserve the one-dimensional quantum properties of individual CNTs on a macroscopic scale. Recently, a simple and well-controlled method was reported for producing wafer-scale crystalline films of highly aligned and densely packed CNTs through spontaneous global alignment that occurs during vacuum filtration (Nat. Nanotechnol. 2016, 11, 633). However, a full understanding of the mechanism of such global alignment has not been achieved. Here, we report results of a series of systematic experiments that demonstrate that the CNT alignment direction can be controlled by the surface morphology of the filter membrane used in the vacuum filtration process. More specifically, we found that the direction of parallel grooves pre-existing on the surface of the filter membrane dictates the direction of the resulting CNT alignment. Furthermore, we intentionally imprinted periodically spaced parallel grooves on a filter membrane using a diffraction grating, which successfully defined the direction of the global alignment of CNTs in a precise and reproducible manner. These results are promising not only for developing novel devices based on macroscopically aligned CNTs but also for understanding the microscopic physical mechanism of the alignment process.

Terahertz Excitonics in Carbon Nanotubes: Exciton Autoionization and Multiplication.

Excitons play major roles in optical processes in modern semiconductors, such as single-wall carbon nanotubes (CNTs), transition metal dichalcogenides, and 2D perovskite quantum wells. They possess extremely large binding energies (>100 meV), dominating absorption and emission spectra even at high temperatures. The large binding energies imply that they are stable, that is, hard to ionize, rendering them seemingly unsuited for optoelectronic devices that require mobile charge carriers, especially terahertz emitters and solar cells. Here, we have conducted terahertz emission and photocurrent studies on films of aligned single-chirality semiconducting CNTs and find that excitons autoionize, i.e., spontaneously dissociate into electrons and holes. This process naturally occurs ultrafast (<1 ps) while conserving energy and momentum. The created carriers can then be accelerated to emit a burst of terahertz radiation when a dc bias is applied, with promising efficiency in comparison to standard GaAs-based emitters. Furthermore, at high bias, the accelerated carriers acquire high enough kinetic energy to create secondary excitons through impact exciton generation, again in a fully energy and momentum conserving fashion. This exciton multiplication process leads to a nonlinear photocurrent increase as a function of bias. Our theoretical simulations based on nonequilibrium Boltzmann transport equations, taking into account all possible scattering pathways and a realistic band structure, reproduce all of our experimental data semiquantitatively. These results not only elucidate the momentum-dependent ultrafast dynamics of excitons and carriers in CNTs but also suggest promising routes toward terahertz excitonics despite the orders-of-magnitude mismatch between the exciton binding energies and the terahertz photon energies.

Observation of Photoinduced Terahertz Gain in GaAs Quantum Wells: Evidence for Radiative Two-Exciton-to-Biexciton Scattering.

We have observed photoinduced negative optical conductivity, or gain, in the terahertz frequency range in a GaAs multiple-quantum-well structure in a strong perpendicular magnetic field at low temperatures. The gain is narrow band: it appears as a sharp peak (linewidth <0.45 meV) whose frequency shifts with applied magnetic field. The gain has a circular-polarization selection rule: a strong line is observed for hole-cyclotron-resonance-active polarization. Furthermore, the gain appears only when the exciton 1s state is populated, which rules out intraexcitonic transitions to be its origin. Based on these observations, we propose a possible process in which the stimulated emission of a terahertz photon occurs while two free excitons scatter into one biexciton in an energy and angular-momentum conserving manner.

Solving the Thermoelectric Trade-Off Problem with Metallic Carbon Nanotubes.

Semiconductors are generally considered far superior to metals as thermoelectric materials because of their much larger Seebeck coefficients (S). However, a maximum value of S in a semiconductor is normally accompanied by a minuscule electrical conductivity (σ), and hence, the thermoelectric power factor (P = S2σ) remains small. An attempt to increase σ by increasing the Fermi energy (EF), on the other hand, decreases S. This trade-off between S and σ is a well-known dilemma in developing high-performance thermoelectric devices based on semiconductors. Here, we show that the use of metallic carbon nanotubes (CNTs) with tunable EF solves this long-standing problem, demonstrating a higher thermoelectric performance than semiconducting CNTs. We studied the EF dependence of S, σ, and P in a series of CNT films with systematically varied metallic CNT contents. In purely metallic CNT films, both S and σ monotonically increased with EF, continuously boosting P while increasing EF. Particularly, in an aligned metallic CNT film, the maximum of P was ∼5 times larger than that in the highest-purity (>99%) single-chirality semiconducting CNT film. We attribute these superior thermoelectric properties of metallic CNTs to the simultaneously enhanced S and σ of one-dimensional conduction electrons near the first van Hove singularity.

Bright and Ultrafast Photoelectron Emission from Aligned Single-Wall Carbon Nanotubes through Multiphoton Exciton Resonance.

Ultrashort bunches of electrons, emitted from solid surfaces through excitation by ultrashort laser pulses, are an essential ingredient in advanced X-ray sources, and ultrafast electron diffraction and spectroscopy. Multiphoton photoemission using a noble metal as the photocathode material is typically used but more brightness is desired. Artificially structured metal photocathodes have been shown to enhance optical absorption via surface plasmon resonance but such an approach severely reduces the damage threshold in addition to requiring state-of-the-art facilities for photocathode fabrication. Here, we report ultrafast photoelectron emission from sidewalls of aligned single-wall carbon nanotubes. We utilized strong exciton resonances inherent in this prototypical one-dimensional material, and its excellent thermal conductivity and mechanical rigidity leading to a high damage threshold. We obtained unambiguous evidence for resonance-enhanced multiphoton photoemission processes with definite power-law behaviors. In addition, we observed strong polarization dependence and ultrashort photoelectron response time, both of which can be quantitatively explained by our model. These results firmly establish aligned single-wall carbon nanotube films as novel and promising ultrafast photocathode material.

Probing low-density carriers in a single atomic layer using terahertz parallel-plate waveguides.

As novel classes of two-dimensional (2D) materials and heterostructures continue to emerge at an increasing pace, methods are being sought for elucidating their electronic properties rapidly, non-destructively, and sensitively. Terahertz (THz) time-domain spectroscopy is a well-established method for characterizing charge carriers in a contactless fashion, but its sensitivity is limited, making it a challenge to study atomically thin materials, which often have low conductivities. Here, we employ THz parallel-plate waveguides to study monolayer graphene with low carrier densities. We demonstrate that a carrier density of ~2 × 10(11) cm(-2), which induces less than 1% absorption in conventional THz transmission spectroscopy, exhibits ~30% absorption in our waveguide geometry. The amount of absorption exponentially increases with both the sheet conductivity and the waveguide length. Therefore, the minimum detectable conductivity of this method sensitively increases by simply increasing the length of the waveguide along which the THz wave propagates. In turn, enabling the detection of low-conductivity carriers in a straightforward, macroscopic configuration that is compatible with any standard time-domain THz spectroscopy setup. These results are promising for further studies of charge carriers in a diverse range of emerging 2D materials.

Single-shot terahertz time-domain spectroscopy in pulsed high magnetic fields.

We have developed a single-shot terahertz time-domain spectrometer to perform optical-pump/terahertz-probe experiments in pulsed, high magnetic fields up to 30 T. The single-shot detection scheme for measuring a terahertz waveform incorporates a reflective echelon to create time-delayed beamlets across the intensity profile of the optical gate beam before it spatially and temporally overlaps with the terahertz radiation in a ZnTe detection crystal. After imaging the gate beam onto a camera, we can retrieve the terahertz time-domain waveform by analyzing the resulting image. To demonstrate the utility of our technique, we measured cyclotron resonance absorption of optically excited carriers in the terahertz frequency range in intrinsic silicon at high magnetic fields, with results that agree well with published values.

Stability of High-Density Two-Dimensional Excitons against a Mott Transition in High Magnetic Fields Probed by Coherent Terahertz Spectroscopy.

We have performed time-resolved terahertz absorption measurements on photoexcited electron-hole pairs in undoped GaAs quantum wells in magnetic fields. We probed both unbound- and bound-carrier responses via cyclotron resonance and intraexciton resonance, respectively. The stability of excitons, monitored as the pair density was systematically increased, was found to dramatically increase with increasing magnetic field. Specifically, the 1s-2p_{-} intraexciton transition at 9 T persisted up to the highest density, whereas the 1s-2p feature at 0 T was quickly replaced by a free-carrier Drude response. Interestingly, at 9 T, the 1s-2p_{-} peak was replaced by free-hole cyclotron resonance at high temperatures, indicating that 2D magnetoexcitons do dissociate under thermal excitation, even though they are stable against a density-driven Mott transition.

Generation of terahertz radiation by optical excitation of aligned carbon nanotubes.

We have generated coherent pulses of terahertz radiation from macroscopic arrays of aligned single-wall carbon nanotubes (SWCNTs) excited by femtosecond optical pulses without externally applied bias. The generated terahertz radiation is polarized along the SWCNT alignment direction. We propose that top-bottom asymmetry in the SWCNT arrays produces a built-in electric field in semiconducting SWCNTs, which enables generation of polarized terahertz radiation by a transient photocurrent surge directed along the nanotube axis.

3D Band Diagram and Photoexcitation of 2D-3D Semiconductor Heterojunctions.

The emergence of a rich variety of two-dimensional (2D) layered semiconductor materials has enabled the creation of atomically thin heterojunction devices. Junctions between atomically thin 2D layers and 3D bulk semiconductors can lead to junctions that are fundamentally electronically different from the covalently bonded conventional semiconductor junctions. Here we propose a new 3D band diagram for the heterojunction formed between n-type monolayer MoS2 and p-type Si, in which the conduction and valence band-edges of the MoS2 monolayer are drawn for both stacked and in-plane directions. This new band diagram helps visualize the flow of charge carriers inside the device in a 3D manner. Our detailed wavelength-dependent photocurrent measurements fully support the diagrams and unambiguously show that the band alignment is type I for this 2D-3D heterojunction. Photogenerated electron-hole pairs in the atomically thin monolayer are separated and driven by an external bias and control the "on/off" states of the junction photodetector device. Two photoresponse regimes with fast and slow relaxation are also revealed in time-resolved photocurrent measurements, suggesting the important role played by charge trap states.

An Atomically Layered InSe Avalanche Photodetector.

Atomically thin photodetectors based on 2D materials have attracted great interest due to their potential as highly energy-efficient integrated devices. However, photoinduced carrier generation in these media is relatively poor due to low optical absorption, limiting device performance. Current methods for overcoming this problem, such as reducing contact resistances or back gating, tend to increase dark current and suffer slow response times. Here, we realize the avalanche effect in a 2D material-based photodetector and show that avalanche multiplication can greatly enhance the device response of an ultrathin InSe-based photodetector. This is achieved by exploiting the large Schottky barrier formed between InSe and Al electrodes, enabling the application of a large bias voltage. Plasmonic enhancement of the photosensitivity, achieved by patterning arrays of Al nanodisks onto the InSe layer, further improves device efficiency. With an external quantum efficiency approaching 866%, a dark current in the picoamp range, and a fast response time of 87 µs, this atomic layer device exhibits multiple significant advances in overall performance for this class of devices.

Efficient modulation of 1.55 µm radiation with gated graphene on a silicon microring resonator.

The gate-controllability of the Fermi-edge onset of interband absorption in graphene can be utilized to modulate near-infrared radiation in the telecommunication band. However, a high modulation efficiency has not been demonstrated to date, because of the small amount of light absorption in graphene. Here, we demonstrate a ∼ 40% amplitude modulation of 1.55 µm radiation with gated single-layer graphene that is coupled with a silicon microring resonator. Both the quality factor and resonance wavelength of the silicon microring resonator were strongly modulated through gate tuning of the Fermi level in graphene. These results promise an efficient electro-optic modulator, ideal for applications in large-scale on-chip optical interconnects that are compatible with complementary metal-oxide-semiconductor technology.

Boron nitride-graphene nanocapacitor and the origins of anomalous size-dependent increase of capacitance.

Conventional wisdom suggests that decreasing dimensions of dielectric materials (e.g., thickness of a film) should yield increasing capacitance. However, the quantum capacitance and the so-called "dead-layer" effect often conspire to decrease the capacitance of extremely small nanostructures, which is in sharp contrast to what is expected from classical electrostatics. Very recently, first-principles studies have predicted that a nanocapacitor made of graphene and hexagonal boron nitride (h-BN) films can achieve superior capacitor properties. In this work, we fabricate the thinnest possible nanocapacitor system, essentially consisting of only monolayer materials: h-BN with graphene electrodes. We experimentally demonstrate an increase of the h-BN films' permittivity in different stack structures combined with graphene. We find a significant increase in capacitance below a thickness of ∼5 nm, more than 100% of what is predicted by classical electrostatics. Detailed quantum mechanical calculations suggest that this anomalous increase in capacitance is due to the negative quantum capacitance that this particular materials system exhibits.