Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents.

Spin orbit torque driven switching is a favorable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here, we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in situ characterization using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, with multilevel switching demonstrated. The result is that spin-switching current densities, down to 800 kA cm-2, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements but also neuromorphic and probabilistic computing.

Graphene Magnetoresistance Control by Photoferroelectric Substrate.

Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.

Single Wavelength Operating Neuromorphic Device Based on a Graphene-Ferroelectric Transistor.

As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than 2 orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.

Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors.

Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh opportunities in the search for alternative device architectures toward overcoming the von Neumann bottleneck. However, their implementation is still in its infancy, mostly by electrical control. It is of utmost interest to develop strategies for additional optical and multistate control in the quest for novel neuromorphic architectures. Here, we demonstrate the electrical and optical control of the ferroelectric polarization states of ferroelectric field effect transistors (FeFET). The FeFETs, fully made of ReS2/hBN/CuInP2S6 vdW materials, achieve an on/off ratio exceeding 107, a hysteresis memory window up to 7 V wide, and multiple remanent states with a lifetime exceeding 103 s. Moreover, the ferroelectric polarization of the CuInP2S6 (CIPS) layer can be controlled by photoexciting the vdW heterostructure. We perform wavelength-dependent studies, which allow for identifying two mechanisms at play in the optical control of the polarization: band-to-band photocarrier generation into the 2D semiconductor ReS2 and photovoltaic voltage into the 2D ferroelectric CIPS. Finally, heterosynaptic plasticity is demonstrated by operating our FeFET in three different synaptic modes: electrically stimulated, optically stimulated, and optically assisted synapse. Key synaptic functionalities are emulated including electrical long-term plasticity, optoelectrical plasticity, optical potentiation, and spike rate-dependent plasticity. The simulated artificial neural networks demonstrate an excellent accuracy level of 91% close to ideal-model synapses. These results provide a fresh background for future research on photoferroelectric vdW systems and put ferroelectric vdW heterostructures on the roadmap for the next neuromorphic computing architectures.

Superconductivity of structurally disordered Y5Ir6Sn18.

The structural and physical properties of Y5Ir6Sn18 grown from Sn-flux as large single crystals are studied. Y5Ir6Sn18 crystallizes with a unique structure [space group Fm3̄m, a = 13.7706(1) Å], which is characterized by a strong disorder. A transmission electron microscopy (TEM) study indicated that the structural model of Y5Ir6Sn18 obtained from X-ray diffraction methods is an average description of a complex intergrowth of domains with different structural arrangements. The studied stannide is a type-II superconductor with a critical temperature Tc = 2.1 K, a rather weak electron-phonon coupling and conventional s-wave BCS-like mechanisms. Performed theoretical electronic band structure calculations indicated the inconsistency of an idealized structural model earlier reported for Y5Ir6Sn18.

Room temperature optoelectronic devices operating with spin crossover nanoparticles.

Molecular systems can exhibit multi-stimuli switching of their properties, with spin crossover materials having unique magnetic transition triggered by temperature and light, among others. Light-induced room temperature operation is however elusive, as optical changes between metastable spin states require cryogenic temperatures. Furthermore, electrical detection is hampered by the intrinsic low conductivity properties of these materials. We show here how a graphene underlayer reveals the light-induced heating that triggers a spin transition, paving the way for using these molecules for room temperature optoelectronic applications.

Tuning photovoltaic response in Bi2FeCrO6 films by ferroelectric poling.

Ferroelectric materials are interesting candidates for future photovoltaic applications due to their potential to overcome the fundamental limits of conventional single bandgap semiconductor-based solar cells. Although a more efficient charge separation and above bandgap photovoltages are advantageous in these materials, tailoring their photovoltaic response using ferroelectric functionalities remains puzzling. Here we address this issue by reporting a clear hysteretic character of the photovoltaic effect as a function of electric field and its dependence on the poling history. Furthermore, we obtain insight into light induced nonequilibrium charge carrier dynamics in Bi2FeCrO6 films involving not only charge generation, but also recombination processes. At the ferroelectric remanence, light is able to electrically depolarize the films with remanent and transient effects as evidenced by electrical and piezoresponse force microscopy (PFM) measurements. The hysteretic nature of the photovoltaic response and its nonlinear character at larger light intensities can be used to optimize the photovoltaic performance of future ferroelectric-based solar cells.

Two-gap superconductivity in Ag1-x Mo6S8 Chevrel phase.

The superconducting properties of [Formula: see text]Mo6S8 [[Formula: see text]] Chevrel phase [[Formula: see text] K] are studied on a sample compacted by spark plasma sintering. Both lower ([Formula: see text] mT) and the upper [[Formula: see text] T] critical magnetic fields are obtained from magnetization and electrical resistivity measurements for the first time. The analysis of the low-temperature electronic specific heat indicates [Formula: see text]Mo6S8 to be a two band superconductor with the energy gaps [Formula: see text] meV (95%) and [Formula: see text] meV (5%). Theoretical DFT calculations reveal a much stronger electron-phonon coupling in the studied Chevrel phase compared to earlier reports. Similar to MgB2, the Fermi surface of studied Chevrel phase is formed by two hole-like and one electron-like bands.

Effect of coupled ferroelectric and antiferromagnetic fluctuations on dielectric anomalies in spin induced multiferroics.

Dielectric and magnetodielectric peaks have been evidenced by ε(T, H) measurements in spin induced ferroelectrics: CuCrO(2) and AgCrO(2) delafossites. Such behaviour, also found in several other improper ferroelectrics, can be explained in the frame of Landau analysis of phase transitions with two coupled order parameters: antiferromagnetic ordered moment, L, and polarization, P. The existence of such anomalies in the dielectric constant observed at T(N) is very general. The existence of this peak is not due to any linear coupling term between P and L in this system, but rather due to the L(2)P(2) term which always exists in every compound, whatever the symmetry/space group is.