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The novel depth-sensing system presented here revolutionizes structured light (SL) technology by employing metasurfaces and photonic crystal surface-emitting lasers (PCSELs) for efficient facial recognition in monocular depth-sensing. Unlike conventional dot projectors relying on diffractive optical elements (DOEs) and collimators, our system projects approximately 45,700 infrared dots from a compact 297-µm-dimention metasurface, drastically more spots (1.43 times) and smaller (233 times) than the DOE-based dot projector in an iPhone. With a measured field-of-view (FOV) of 158° and a 0.611° dot sampling angle, the system is lens-free and lightweight and boasts lower power consumption than vertical-cavity surface-emitting laser (VCSEL) arrays, resulting in a 5-10 times reduction in power. Utilizing a GaAs-based metasurface and a simplified optical architecture, this innovation not only addresses the drawbacks of traditional SL depth-sensing but also opens avenues for compact integration into wearable devices, offering remarkable advantages in size, power efficiency, and potential for widespread adoption.
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A composite strain-modulation strategy to achieve high-performing green µ-LED devices for visible light communication is proposed. Compared with the conventional pre-well structure, introducing a pre-layer to enlarge the lateral lattice constant of the underlayer decreased the strain in the overall strain-modulated layer and MQW. This improved the crystal quality and suppressed the quantum confinement Stark effect. Using this modulation strategy, the green µ-LED array with the compound pre-strained structure exhibited a light output power of 20.5â mW and modulation bandwidth of 366â MHz, corresponding to improvements of 61% and 78%, respectively, compared with those of µ-LEDs with a pre-well structure.
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The phosphor-converted light-emitting diode (PC-LED) has become an indispensable solid-state lighting and display technologies in the modern society. Nevertheless, the use of scarce rare-earth elements and the thermal quenching (TQ) behavior are still two most crucial issues yet to be solved. Here, this work successfully demonstrates a highly efficient and thermally stable green emissive MnI2 (XanPO) crystals showing a notable photoluminescence quantum yield (PLQY) of 94% and a super TQ resistance from 4 to 623 K. This unprecedented superior thermal stability is attributed to the low electron-phonon coupling and the unique rigid crystal structure of MnI2 (XanPO) over the whole temperature range based on the temperature-dependent photoluminescence (PL) and single crystal X-ray diffraction (SCXRD) analyses. Considering these appealing properties, green PC-LEDs with a power efficacy of 102.5 lm W-1 , an external quantum efficiency (EQE) of 22.7% and a peak luminance up to 7750 000 cd m-2 are fabricated by integrating MnI2 (XanPO) with commercial blue LEDs. Moreover, the applicability of MnI2 (XanPO) in both micro-LEDs and organic light-emitting diodes (OLEDs) is also demonstrated. In a nutshell, this study uncovers a candidate of highly luminescent and TQ resistant manganese halide suitable for a variety of emission applications.
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Meta-optics integrated with light sources has gained significant attention. However, most focused on the efficiency of metasurfaces themselves, rather than the efficiency of integration. To design highly efficient beam deflection, we develop a scheme of homo-metagrating, involving the same material for meta-atoms, substrate, and top layer of the laser, to achieve near-unity power from light-emitting to metasurfaces. We utilize three degrees of freedom: overall add-on phase, parameters of meta-atoms in a period, and lattice arrangement. The overall efficiency of homo-metagratings is higher than that of hetero-metagratings. We believe our approach is capable of being implemented in various ultracompact optic systems.
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The fabrication processes of high-speed oxide-confined single-mode (SM)-vertical-cavity surface-emitting lasers (VCSELs) are complex, costly, and often held back by reliability and yield issues, which substantially set back the high-volume processing and mass commercialization of SM-VCSELs in datacom or other applications. In this article, we report the effects of Al2O3 passivation films deposited by atomic layer deposition (ALD) on the mesa sidewalls of high-speed 850-nm SM-VCSELs. The ALD-deposited film alleviates the trapping of carriers by sidewall defects and is an effective way to improve the performance of SM-VCSELs. The ALD-passivated SM-VCSELs showed statistically significant static performance improvements and reached a believed to be record-breaking SM-modulation bandwidth of 29.1 GHz. We also propose an improved microwave small-signal equivalent circuit model for SM-VCSELs that accounts for the losses attributed to the mesa sidewalls. These findings demonstrate that ALD passivation can mitigate processing-induced surface damage, enhance the performance of SM-VCSELs, and enable mass production of high-quality SM-VCSELs for mid- to long-reach optical interconnects.
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In this work, we demonstrate a new tapered prism-shaped luminescent solar concentrator (LSC), which guides most of the luminescence toward one edge instead of four, for the solar window application. Only one Si photovoltaic (PV) strip attached to the light-emitting sidewall is needed to collect the luminescence, which further reduces PV material cost and avoids electrical mismatch. To achieve high visible transmission and mitigate reabsorption, colloidal silicon quantum dots (SiQDs) with ultraviolet-selective absorption and large Stokes shift are used as the fluorophores. With the SiQD concentration equal to 8 mg mL-1, the SiQD-LSC as a solar window can attain a power conversion efficiency (PCE) equal to 0.27%, while ensuring high average visible transmission (AVT = 86%) and high color rendering index (CRI = 94 with AM1.5G as the incident spectrum). When adjusted to front-facing, the Si PV strip can harvest not only the direct sunlight but also the concentrated SiQD fluorescence guided from the LSC. As a result, the overall solar window PCE can be increased to 1.18%, and the PCE of the front-facing Si PV strip alone can be increased by 7% due to the luminescence guided from the SiQD-LSC.
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This study utilized thin p-GaN, indium tin oxide (ITO), and a reflective passivation layer (RPL) to improve the performance of deep ultra-violet light-emitting diodes (DUV-LEDs). RPL reflectors, which comprise HfO2/SiO2 stacks of different thickness to maintain high reflectance, were deposited on the DUV-LEDs with 40 nm-thick p-GaN and 12 nm-thick ITO thin films. Although the thin p-GaN and ITO films affect the operation voltage of DUV-LEDs, the highly reflective RPL structure improved the WPE and light extraction efficiency (LEE) of the DUV-LEDs, yielding the best WPE and LEE of 2.59% and 7.57%, respectively. The junction temperature of DUV-LEDs with thick p-GaN increased linearly with the injection current, while that of DUV-LEDs with thin p-GaN, thin ITO, and RPL was lower than that of the Ref-LED under high injection currents (> 500 mA). This influenced the temperature sensitive coefficients (dV/dT, dLOP/dT, and dWLP/dT). The thermal behavior of DUV-LEDs with p-GaN and ITO layers of different thicknesses with/without the RPL was discussed in detail.
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We propose and implement a high-bandwidth white-light visible light communication (VLC) system accomplishing data rate of 2.805 Gbit/s utilizing a semipolar blue micro-LED. The system uses an InGaN/GaN semipolar (20-21) blue micro-LED to excite yellow phosphor film for high-speed VLC. The packaged 30 µm 2 × 4 blue micro-LED array has an electrical-to-optical (EO) bandwidth of 1042.5 MHz and a peak wavelength of 447 nm. The EO bandwidth of the white-light VLC system is 849 MHz. Bit error rate (BER) of 2.709 × 10-3 meeting the pre-forward error correction (FEC) threshold is accomplished by employing a bit and power loaded orthogonal frequency division multiplexing (OFDM) signal. The proposed white-light VLC system employs simple and inexpensive yellow phosphor film for white-light conversion, complex color conversion material is not needed. Besides, no optical blue filter is employed in the white-light VLC system. The fabrication of the InGaN/GaN semipolar (20-21) blue micro-LED is discussed, and its characteristics are also evaluated.
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The effect of atomic-layer deposition (ALD) sidewall passivation on the enhancement of the electrical and optical efficiency of micro-light-emitting diode (µ-LED) is investigated. Various blue light µ-LED devices (from 5 × 5 µm2 to 100 × 100 µm2) with ALD-Al2O3 sidewall passivation were fabricated and exhibited lower leakage and better external quantum efficiency (EQE) comparing to samples without ALD-Al2O3 sidewall treatment. Furthermore, the EQE values of 5 × 5 and 10 × 10 µm2 devices yielded an enhancement of 73.47% and 66.72% after ALD-Al2O3 sidewall treatments process, and the output power also boosted up 69.3% and 69.9%. The Shockley-Read-Hall recombination coefficient can be extracted by EQE data fitting, and the recombination reduction in the ALD samples can be observed. The extracted surface recombination velocities are 551.3 and 1026 cm/s for ALD and no-ALD samples, respectively.
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This work combines the high-temperature sintering method and atomic layer deposition (ALD) technique, and yields SiO2 /AlOx -sealed γ-CsPbI3 nanocrystals (NCs). The black-phase CsPbI3 NCs, scattered and encapsulated firmly in solid SiO2 sub-micron particles, maintain in black phases against water soaking, ultraviolet irradiation, and heating, exhibiting remarkable phase stability. A new phase-transition route, from γ via ß to α phase without transferring into δ phase, has been discovered upon temperature increasing. The phase stability is ascribed to the high pressure exerted by the rigid SiO2 encapsulations, and its condensed amorphous structures that prevent the permeation of H2 O molecules. Nanoscale coating of Al2 O3 thin films, which are deposited on the surface of the CsPbI3 -SiO2 by ALD, enhances the protection against O2 infiltration, greatly elevating the high-temperature stability of CsPbI3 NCs sealed inside, as the samples remain bright after 1-h annealing in air at 400 °C. These fabrication and encapsulation techniques effectively prevent the formation of δ-CsPbI3 under harsh environment, bringing the high-pressure preservation of black-phase CsPbI3 from laboratory to industry toward potential applications in both photovoltaic and fluorescent areas.
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The role of a superlattice distributed Bragg reflector (SL DBR) as the p-type electron blocking layer (EBL) in a GaN micro-light-emitting diode (micro-LED) is numerically investigated to improve wall-plug efficiency (WPE). The DBR consists of AlGaN/GaN superlattice (high refractive index layer) and GaN (low refractive index layer). It is observed that the reflectivity of the p-region and light extraction efficiency (LEE) increase with the number of DBR pairs. The AlGaN/GaN superlattice EBL is well known to reduce the polarization effect and to promote hole injection. Thus, the superlattice DBR structure shows a balanced carrier injection and results in a higher internal quantum efficiency (IQE). In addition, due to the high refractive-index layer replaced by the superlattice, the conductive DBR results in a lower operation voltage. As a result, WPE is improved by 22.9% compared to the identical device with the incorporation of a conventional p-type EBL.
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The external bandwidth of germanium waveguide photodetectors (PDs) decreases with the device length due to the load and parasitic effects even if the internal one is less affected. Shortening PDs raises the external bandwidth but lowers the responsivity, introducing a trade-off between the two figures of merits. Here, we present a scheme of waveguide PDs based on total internal reflections of corner reflectors. The reflector can be easily fabricated with the standard photolithography at the end of PDs to efficiently reflect optical power back to germanium for additional absorption, allowing for further size reduction. The structure may render the optimization of PDs more flexible.
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We propose and demonstrate a green semipolar (20-21) micro-light emitting diode (LED) acting as a high speed visible light communication (VLC) photodiode (PD). The micro-LED PD has the optical-to-electrical (OE) response of 228 MHz. A record data rate of 540 Mbit/s in on-off-keying (OOK) format with free-space transmission distance of 1.1 m was achieved, fulfilling the pre-forward error correction (FEC) limit. Many transmitters (Txs) and receivers (Rxs) is required to support the high density pico/femto-cells in future wireless networks, as well as the Internet-of-Things (IOT) networks. The proposed work could allow the realization of a low-cost, small-footprint and a high level of integration of VLC Txs and Rxs on the same platform.
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In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO2/SiO2 stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p-GaN thicknesses. The RPL structure improved the external quantum efficiency droops of the DUV-LEDs with thick and thin p-GaN, thereby increasing their light output power by 18.4% and 39.4% under injection current of 500 mA and by 17.9% and 37.9% under injection current of 1000 mA, respectively. The efficiency droops of the DUV-LEDs with and without the RPL with thick p-GaN were 20.1% and 19.1% and with thin p-GaN were 18.0% and 15.6%, respectively. The DUV-LEDs with the RPL presented improved performance. The above results demonstrate the potential for development of the RPLs for DUV-LED applications.
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In this work, we propose adopting step-type quantum wells to improve the external quantum efficiency for GaN-based yellow micro light-emitting diodes. The step-type quantum well is separated into two parts with slightly different InN compositions. The proposed quantum well structure can partially reduce the polarization mismatch between quantum barriers and quantum wells, which increases the overlap for electron and hole wave functions without affecting the emission wavelength. Another advantage is that the slightly decreased InN composition in the quantum well helps to decrease the valence band barrier height for holes. For this reason, the hole injection capability is improved. More importantly, we also find that step-type quantum wells can make holes spread less to the mesa edges, thus suppressing the surface nonradiative recombination and decreasing the leakage current.
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In this study, AlGaInP red light emitting diodes with sizes ranging from 5 to 50 micrometers were fabricated and characterized. The atomic layer deposition technology is applied to coat a layer of silicon dioxide for passivation and protection. The top emission area is covered by ITO layer to maximize the optical output. From the optical measurement, the linewidth and emission peaks shift very little among different current levels (from 30 to 150 A/cm2). High current level lifetests are performed and a 15â µm ALD device can last 27 hours of continuous operation at 100 A/cm2 before their diode junction failed. A much shorter lifetime of 5.32 hours was obtained when the driving current is raised to 400 A/cm2. When the same condition was applied to 15â µm PECVD devices, 25 hours and 4.33 hours are registered for 100 A/cm2 and 400 A/cm2 tests, respectively. The cross-sectional SEM reveals the voids, defects, and dark lines developed during the aging tests, and most of them are caused by top contact failure. The surface layers of ITO and SiO2 were melted and the dark lines which were originated from the top surface propagated through the device and led to the eventual failure of the diode. The optical intensity degradation slopes of different sizes of devices indicate a large device can last longer in this accelerated aging test. The efficiencies of the devices are also evaluated by the ABC model and the fitted bimolecular coefficient ranges from 1.35 to 3.40×10-10 cm3/s.
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We demonstrate a highly sensitive, low-cost, environmental-friendly pressure sensor derived from a wool-based pressure sensor with wide pressure sensing range using wool bricks embedded with a Ag nano-wires. The easy fabrication and light weight allow portable and wearable device applications. Wth the integration of a light-emitting diode possessing multi-wavelength emission, we illustrate a hybrid multi-functional LED-integrated pressure sensor that is able to convert different applied pressures to light emission with different wavelengths. Due to the high sensitivity of the pressure sensor, the demonstration of acoustic signal detection has also been presented using sound of a metronome and a speaker playing a song. This multi-functional pressure sensor can be implemented to technologies such as smart lighting, health care, visible light communication (VLC), and other internet of things (IoT) applications.
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The low luminance efficiency, poor reliability and parasitic peaks have greatly limited the commercialization of deep ultraviolet (DUV) light-emitting diodes. Tasks of identifying the culprits of these deficits are of paramount importance but remains unaccomplished. We employ the full-range temperature (20 K -300 K) measurement on 275-nm DUV devices that subjected to a 15-hour current-stress aging. The results suggest that the primary culprit of fast luminous decay is the proliferation of non-radiative centers. The origins of two main parasitic peaks are identified. The 310-nm peak is considered to solely come from deep-level radiative centers (DLRCs) that only dwell in the active region. Whereas, the 400-nm peak is proven to be dual-sources. One is related to the DLRCs in the active region, which only can be observed at very low currents; the other emerging at higher currents are associated with similar kinds of DLRCs located in the p-region, which only are excited when electrons overflow. This new discovery also demonstrates that a thorough investigation on the interplay among carriers and various types of defects should be conducted on the basis of the measurement that is taken under a wide temperature range, as well as under a proper forward voltage. This is to let the quasi-Fermi level shift across deep defect levels, the band-edge, and to over-band, whereby these recombination sites are exposed to deficit, moderate and saturated electron environment so that their natures can be well tested.
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In this work, the size-dependent effect for InGaN/GaN-based blue micro-light emitting diodes (µLEDs) is numerically investigated. Our results show that the external quantum efficiency (EQE) and the optical power density drop drastically as the device size decreases when sidewall defects are induced. The observations are owing to the higher surface-to-volume ratio for small µLEDs, which makes the Shockley-Read-Hall (SRH) non-radiative recombination at the sidewall defects not negligible. The sidewall defects also severely affect the injection capability for electrons and holes, such that the electrons and holes are captured by sidewall defects for the SRH recombination. Thus, the poor carrier injection shall be deemed as a challenge for achieving high-brightness µLEDs. Our studies also indicate that the sidewall defects form current leakage channels, and this is reflected by the current density-voltage characteristics. However, the improved current spreading effect can be obtained when the chip size decreases. The better current spreading effect takes account for the reduced forward voltage.
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The formation of PtSe2 -layered films is reported in a large area by the direct plasma-assisted selenization of Pt films at a low temperature, where temperatures, as low as 100 °C at the applied plasma power of 400 W can be achieved. As the thickness of the Pt film exceeds 5 nm, the PtSe2 -layered film (five monolayers) exhibits a metallic behavior. A clear p-type semiconducting behavior of the PtSe2 -layered film (≈trilayers) is observed with the average field effective mobility of 0.7 cm2 V-1 s-1 from back-gated transistor measurements as the thickness of the Pt film reaches below 2.5 nm. A full PtSe2 field effect transistor is demonstrated where the thinner PtSe2 , exhibiting a semiconducting behavior, is used as the channel material, and the thicker PtSe2 , exhibiting a metallic behavior, is used as an electrode, yielding an ohmic contact. Furthermore, photodetectors using a few PtSe2 -layered films as an adsorption layer synthesized at the low temperature on a flexible substrate exhibit a wide range of absorption and photoresponse with the highest photocurrent of 9 µA under the laser wavelength of 408 nm. In addition, the device can maintain a high photoresponse under a large bending stress and 1000 bending cycles.