Logic Gates Based on 3D Vertical Junctionless Gate-All-Around Transistors with Reliable Multilevel Contact Engineering.

Vertical gate-all-around (V-GAA) represents the ultimate configuration in the forthcoming transistor industry, but it still encounters challenges in the semiconductor community. This paper introduces, for the first time, a dual-input logic gate circuit achieved using 3D vertical transistors with nanoscale sub-20-nm GAA, employing a novel technique for creating contacts and patterning metallic lines at the bottom level without the conventional lift-off process. This involves a two-step oxidation process: patterning the first field oxide to form bottom metal lines and then creating the gate oxide layer on nanowires (NWs), followed by selective removal from the top and bottom of the nanostructures. VGAA-NW transistors, fabricated using the lift-off-free approach, exhibit improved yield and reduced access resistance, leading to an enhanced drive current while maintaining good immunity against short-channel effects. Finally, elementary two-input logic gates within a single cell, using VNW transistors, demonstrate novel possibilities in advanced logic circuitry design and routing options in 3D.

Real-Time and High-Resolution Monitoring of Neuronal Electrical Activity and pH Variations Based on the Co-Integration of Nanoelectrodes and Chem-FinFETs.

Developing new approaches amenable to the measurement of neuronal physiology in real-time is a very active field of investigation, as it will offer improved methods to assess the impact of diverse insults on neuronal homeostasis. Here, the development of an in vitro bio platform is reported which can record the electrical activity of cultured primary rat cortical neurons with extreme sensitivity, while simultaneously tracking the localized changes in the pH of the culture medium. This bio platform features passive vertical nanoprobes with ultra-high signal resolution (several mV amplitude ranges) and Chem-FinFETs (pH sensitivity of sub-0.1 pH units), covering an area as little as a neuronal soma. These multi-sensing units are arranged in an array to probe both chemically and electrically an equivalent surface of ≈ 0.5 mm2. A homemade setup is also developed which allows recording of multiplexed data in real-time (10 ps range) from the active chem-sensors and passive electrodes and which is used to operate the platform. Finally, a proof-of-concept is presented for a neuro-relevant application, by investigating the effect on neuronal activity of Amyloid beta oligomers, the main toxic peptide in Alzheimer's Disease, which reveals that exposure to amyloid beta oligomers modify the amplitude, but not the frequency, of neuronal firing, without any detectable changes in pH values along this process.

Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology.

Integrating self-catalyzed InAs nanowires on Si(111) is an important step toward building vertical gate-all-around transistors. The complementary metal oxide semiconductor (CMOS) compatibility and the nanowire aspect ratio are two crucial parameters to consider. In this work, we optimize the InAs nanowire morphology by changing the growth mode from Vapor-Solid to Vapor-Liquid-Solid in a CMOS compatible process. We study the key role of the Hydrogen surface preparation on nanowire growths and bound it to a change of the chemical potential and adatoms diffusion length on the substrate. We transfer the optimized process to patterned wafers and adapt both the surface preparation and the growth conditions. Once group III and V fluxes are balances, aspect ratio can be improved by increasing the system kinetics. Overall, we propose a method for large scale integration of CMOS compatible InAs nanowire on silicon and highlight the major role of kinetics on the growth mechanism.

Enhancement of electric and magnetic dipole transition of rare-earth-doped thin films tailored by high-index dielectric nanostructures.

We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few-nanometer thin film of rare-earth-ion-doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resolution of a few hundred nanometers, our approach appeals by its simplicity and high signal-to-noise ratio. We demonstrate our technique at the example of single silicon nanorods and dimers, in which we find a significant separation of electric and magnetic near-field contributions. Our method paves the way towards the efficient and rapid characterization of the electric and magnetic optical response of complex photonic nanostructures.

Self-Aligned Functionalization Approach to Order Neuronal Networks at the Single-Cell Level.

Despite significant progress, our knowledge of the functioning of the central nervous system still remains scarce to date. A better understanding of its behavior, in either normal or diseased conditions, goes through an increased knowledge of basic mechanisms involved in neuronal function, including at the single-cell level. This has motivated significant efforts for the development of miniaturized sensing devices to monitor neuronal activity with high spatial and signal resolution. One of the main challenges remaining to be addressed in this domain is, however, the ability to create in vitro spatially ordered neuronal networks at low density with a precise control of the cell location to ensure proper monitoring of the activity of a defined set of neurons. Here, we present a novel self-aligned chemical functionalization method, based on a repellant surface with patterned attractive areas, which permits the elaboration of low-density neuronal network down to individual cells with a high control of the soma location and axonal growth. This approach is compatible with complementary metal-oxide-semiconductor line technology at a wafer scale and allows performing the cell culture on packaged chip outside microelectronics facilities. Rat cortical neurons were cultured on such patterned surfaces for over one month and displayed a very high degree of organization in large networks. Indeed, more than 90% of the network nodes were settled by a soma and 100% of the connecting lines were occupied by a neurite, with a very good selectivity (low parasitic cell connections). After optimization, networks composed of 75% of unicellular nodes were obtained, together with a control at the micron scale of the location of the somas. Finally, we demonstrated that the dendritic neuronal growth was guided by the surface functionalization, even when micrometer scale topologies were encountered and we succeeded to control the extension growth along one-dimensional-aligned nanostructures with sub-micrometrical scale precision. This novel approach now opens the way for precise monitoring of neuronal network activity at the single-cell level.

Metallic Nanoalloys on Vertical GaAs Nanowires: Growth Mechanisms and Shape Control of Ni-GaAs Compounds.

GaAs nanowires are promising candidates for emerging devices in a broad field of applications (e.g., nanoelectronics, photodetection, or photoconversion). These nanostructures benefit greatly from a vertical integration, as it allows for the exhibition of the entire nanowire surface. However, one of the main challenges related to vertical integration is the conception of an efficient method to create low resistive contacts at nanoscale without degrading the device performance. In this article, we propose a complementary metal-oxide-semiconductor (CMOS)-compatible approach to form alloyed contacts at the extremities of vertical GaAs nanowires. Ni-based and Pd-based alloys on different vertical GaAs nanostructures have been characterized by structural and chemical analyses to identify the phase and to study the growth mechanisms involved at the nanoscale. It is shown that the formation of the Ni3GaAs alloy on top of nanowires following the epitaxial relation Ni3GaAs(0001)∥GaAs(111) leads to a pyramidal shape with four faces. Finally, guidelines are presented to tune the shape of this alloy by varying the initial metal thickness and nanowire diameters. It will facilitate the fabrication of a nanoalloy structure with tailored shape characteristics to precisely align with a designated application.

Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning.

Silicon nanostructure patterning with tight geometry control is an important challenge at the bottom level. In that context, stress based controlled oxidation appears to be an efficient tool for precise nanofabrication. Here, we investigate the stress-retarded oxidation phenomenon in various silicon nanostructures (nanobeams, nanorings and nanowires) at both the experimental and the theoretical levels. Different silicon nanostructures have been fabricated by a top-down approach. Complex dependence of the stress build-up on the nano-object's dimension, shape and size has been demonstrated experimentally and physically explained by modelling. For the oxidation of a two-dimensional nanostructure (nanobeam), relative independence to size effects has been observed. On the other hand, radial stress increase with geometry downscaling of a one-dimensional nanostructure (nanowire) has been carefully emphasized. The study of shape engineering by retarded oxidation effects for vertical silicon nanowires is finally discussed.

Combining PEDOT:PSS Polymer Coating with Metallic 3D Nanowires Electrodes to Achieve High Electrochemical Performances for Neuronal Interfacing Applications.

This study presents a novel approach to improve the performance of microelectrode arrays (MEAs) used for electrophysiological studies of neuronal networks. The integration of 3D nanowires (NWs) with MEAs increases the surface-to-volume ratio, which enables subcellular interactions and high-resolution neuronal signal recording. However, these devices suffer from high initial interface impedance and limited charge transfer capacity due to their small effective area. To overcome these limitations, the integration of conductive polymer coatings, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) is investigated as a mean of improving the charge transfer capacity and biocompatibility of MEAs. The study combines platinum silicide-based metallic 3D nanowires electrodes with electrodeposited PEDOT:PSS coatings to deposit ultra-thin (<50 nm) layers of conductive polymer onto metallic electrodes with very high selectivity. The polymer-coated electrodes were fully characterized electrochemically and morphologically to establish a direct relationship between synthesis conditions, morphology, and conductive features. Results show that PEDOT-coated electrodes exhibit thickness-dependent improved stimulation and recording performances, offering new perspectives for neuronal interfacing with optimal cell engulfment to enable the study of neuronal activity with acute spatial and signal resolution at the sub-cellular level.

Large-scale controlled coupling of single-photon emitters to high-index dielectric nanoantennas by AFM nanoxerography.

Improving the brightness of single-photon sources by means of optically resonant nanoantennas is a major stake for the development of efficient nanodevices for quantum communications. We demonstrate that nanoxerography by atomic force microscopy makes possible the fast, robust and repeatable positioning of model quantum nanoemitters (nitrogen-vacancy NV centers in nanodiamonds) on a large-scale in the gap of silicon nanoantennas with a dimer geometry. By tuning the parameters of the nanoxerography process, we can statistically control the number of deposited nanodiamonds, yielding configurations down to a unique single photon emitter coupled to these high index dielectric nanoantennas, with high selectivity and enhanced brightness induced by a near-field Purcell effect. Numerical simulations are in very good quantitative agreement with time-resolved photoluminescence experiments. A multipolar analysis reveals in particular all the aspects of the coupling between the dipolar single emitter and the Mie resonances hosted by these simple nanoantennas. This proof of principle opens a path to a genuine and large-scale spatial control of the coupling of punctual quantum nanoemitters to arrays of optimized optically resonant nanoantennas. It paves the way for future fundamental studies in quantum nano-optics and toward integrated photonics applications for quantum technologies.

Control of light emission of quantum emitters coupled to silicon nanoantenna using cylindrical vector beams.

Light emission of europium (Eu3+) ions placed in the vicinity of optically resonant nanoantennas is usually controlled by tailoring the local density of photon states (LDOS). We show that the polarization and shape of the excitation beam can also be used to manipulate light emission, as azimuthally or radially polarized cylindrical vector beam offers to spatially shape the electric and magnetic fields, in addition to the effect of silicon nanorings (Si-NRs) used as nanoantennas. The photoluminescence (PL) mappings of the Eu3+ transitions and the Si phonon mappings are strongly dependent of both the excitation beam and the Si-NR dimensions. The experimental results of Raman scattering and photoluminescence are confirmed by numerical simulations of the near-field intensity in the Si nanoantenna and in the Eu3+-doped film, respectively. The branching ratios obtained from the experimental PL maps also reveal a redistribution of the electric and magnetic emission channels. Our results show that it could be possible to spatially control both electric and magnetic dipolar emission of Eu3+ ions by switching the laser beam polarization, hence the near field at the excitation wavelength, and the electric and magnetic LDOS at the emission wavelength. This paves the way for optimized geometries taking advantage of both excitation and emission processes.

A combination of capillary and dielectrophoresis-driven assembly methods for wafer scale integration of carbon-nanotube-based nanocarpets.

The wafer scale integration of carbon nanotubes (CNT) remains a challenge for electronic and electromechanical applications. We propose a novel CNT integration process relying on the combination of controlled capillary assembly and buried electrode dielectrophoresis (DEP). This process enables us to monitor the precise spatial localization of a high density of CNTs and their alignment in a pre-defined direction. Large arrays of independent and low resistivity (4.4 × 10(-5) Ω m) interconnections were achieved using this hybrid assembly with double-walled carbon nanotubes (DWNT). Finally, arrays of suspended individual CNT carpets are realized and we demonstrate their potential use as functional devices by monitoring their resonance frequencies (ranging between 1.7 and 10.5 MHz) using a Fabry-Perot interferometer.

Large-Scale Monolithic Fabrication of III-V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate.

Vertical III-V nanowires are of great interest for a large number of applications, but their integration still suffers from manufacturing difficulties of these one-dimensional nanostructures on the standard Si(100) microelectronic platform at a large scale. Here, a top-down approach based on the structure of a thin III-V epitaxial layer on Si was proposed to obtain monolithic GaAs or GaSb nanowires as well as GaAs-Si nanowires with an axial heterostructure. Based on a few complementary metal-oxide-semiconductor-compatible fabrication steps, III-V nanowires with a high crystalline quality as well as a uniform diameter (30 nm), morphology, positioning, and orientation were fabricated. In addition, the patterning control of nanowires at the nanoscale was thoroughly characterized by structural and chemical analyses to finely tune the key process parameters. To properly control the morphology of the nanowires during reactive-ion etching (RIE), the balance between the plasma properties and the formation of a protective layer on the nanowire sidewall was studied in detail. Furthermore, high-resolution microscopy analyses were performed to gain a better understanding of the protective layer's composition and to observe the crystalline quality of the nanowires. This approach paves the way for the possible scale-up integration of III-V-based nanowire devices with conventional Si/complementary metal-oxide-semiconductor technology.

Borna disease virus docks on neuronal DNA double-strand breaks to replicate and dampens neuronal activity.

Borna disease viruses (BoDV) have recently emerged as zoonotic neurotropic pathogens. These persistent RNA viruses assemble nuclear replication centers (vSPOT) in close interaction with the host chromatin. However, the topology of this interaction and its consequences on neuronal function remain unexplored. In neurons, DNA double-strand breaks (DSB) have been identified as novel epigenetic mechanisms regulating neurotransmission and cognition. Activity-dependent DSB contribute critically to neuronal plasticity processes, which could be impaired upon infection. Here, we show that BoDV-1 infection, or the singled-out expression of viral Nucleoprotein and Phosphoprotein, increases neuronal DSB levels. Of interest, inducing DSB promoted the recruitment anew of vSPOT colocalized with DSB and increased viral RNA replication. BoDV-1 persistence decreased neuronal activity and response to stimulation by dampening the surface expression of glutamate receptors. Taken together, our results propose an original mechanistic cross talk between persistence of an RNA virus and neuronal function, through the control of DSB levels.

Challenges in nanofabrication for efficient optical metasurfaces.

Optical metasurfaces have raised immense expectations as cheaper and lighter alternatives to bulk optical components. In recent years, novel components combining multiple optical functions have been proposed pushing further the level of requirement on the manufacturing precision of these objects. In this work, we study in details the influence of the most common fabrication errors on the optical response of a metasurface and quantitatively assess the tolerance to fabrication errors based on extensive numerical simulations. We illustrate these results with the design, fabrication and characterization of a silicon nanoresonator-based metasurface that operates as a beam deflector in the near-infrared range.

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.

We report growth by molecular beam epitaxy and structural characterization of gallium-nucleated GaAs nanowires on silicon. The influences of growth temperature and V/III ratio are investigated and compared in the case of oxide-covered and oxide-free substrates. We demonstrate a precise positioning process for Ga-nucleated GaAs nanowires using a hole array in a dielectric layer thermally grown on silicon. Crystal quality is analyzed by high resolution transmission electron microscopy. Crystal structure evolves from pure zinc blende to pure wurtzite along a single nanowire, with a transition region.

Realization of vertical silicon nanowire networks with an ultra high density using a top-down approach.

In this paper, we demonstrate the top-down fabrication of vertical silicon nanowires networks with an ultra high density (4 x 10(10) cm(-2)), a yield of 100%, and a precise control of both diameter and location. Firstly, dense and well-defined networks of nanopillars have been patterned by e-beam lithography using a negative tone e-beam resist Hydrogen SylsesQuioxane (HSQ). A very high contrast has been obtained using a high acceleration voltage (100 kV), very small beam size at a current of 100 pA and a concentrated developer, 25% Tetramethylammonium Hydroxide. The patterns were transferred by reactive ion etching. Using chlorine based plasma chemistry and low pressure, etching anisotropy was guaranteed while avoiding the so-called 'grass effect'. This approach enabled the production of vertical silicon nanowires networks with a 20 nm diameter and a pitch of 30 nm. Lastly, the self-limited oxidation phenomenon in 1D structure has been used to perfectly control the shrinking of NWs and to obtain a Si surface free of defects induced by reactive ion etching. The silicon nanowires networks have been tapered by wet oxidation (850 degrees C) down to a diameter of 10 nm with a high aspect ratio 11.

Micro/Nanostructure Engineering of Epitaxial Piezoelectric α-Quartz Thin Films on Silicon.

The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of piezoelectric devices as prospective sensors with applications based on the operation in the high-frequency range. However, to date, it has not been possible to make existing quartz manufacturing methods compatible with integration on silicon and structuration by top-down lithographic techniques. Here, we report an unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three lithographic techniques: (i) laser interference lithography, (ii) soft nanoimprint lithography on Sr-doped SiO2 sol-gel thin films, and (iii) self-assembled SrCO3 nanoparticle reactive nanomasks. Epitaxial α-quartz nanopillars with different diameters (from 1 µm down to 50 nm) and heights (up to 2 µm) were obtained. This work demonstrates the complementarity of soft-chemistry and top-down lithographic techniques for the patterning of epitaxial quartz thin films on silicon while preserving its epitaxial crystallinity and piezoelectric properties. These results open up the opportunity to develop a cost-effective on-chip integration of nanostructured piezoelectric α-quartz MEMS with enhanced sensing properties of relevance in different fields of application.

Pushing the limits of optical information storage using deep learning.

Diffraction drastically limits the bit density in optical data storage. To increase the storage density, alternative strategies involving supplementary recording dimensions and robust readout schemes must be explored. Here, we propose to encode multiple bits of information in the geometry of subwavelength dielectric nanostructures. A crucial problem in high-density information storage concepts is the robustness of the information readout with respect to fabrication errors and experimental noise. Using a machine-learning-based approach in which the scattering spectra are analysed by an artificial neural network, we achieve quasi-error-free readout of sequences of up to 9 bits, encoded in top-down fabricated silicon nanostructures. We demonstrate that probing few wavelengths instead of the entire spectrum is sufficient for robust information retrieval and that the readout can be further simplified, exploiting the RGB values from microscopy images. Our work paves the way towards high-density optical information storage using planar silicon nanostructures, compatible with mass-production-ready complementary metal-oxide-semiconductor technology.

Evolutionary multi-objective optimization of colour pixels based on dielectric nanoantennas.

The rational design of photonic nanostructures consists of anticipating their optical response from systematic variations of simple models. This strategy, however, has limited success when multiple objectives are simultaneously targeted, because it requires demanding computational schemes. To this end, evolutionary algorithms can drive the morphology of a nano-object towards an optimum through several cycles of selection, mutation and cross-over, mimicking the process of natural selection. Here, we present a numerical technique that can allow the design of photonic nanostructures with optical properties optimized along several arbitrary objectives. In particular, we combine evolutionary multi-objective algorithms with frequency-domain electrodynamical simulations to optimize the design of colour pixels based on silicon nanostructures that resonate at two user-defined, polarization-dependent wavelengths. The scattering spectra of optimized pixels fabricated by electron-beam lithography show excellent agreement with the targeted objectives. The method is self-adaptive to arbitrary constraints and therefore particularly apt for the design of complex structures within predefined technological limits.

Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around.

Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction channel and then a better immunity against the short channel effects (SCE). In this letter, a large-scale process of GAA vertical silicon nanowire (VNW) MOSFETs is presented. A top-down approach is adopted for the realization of VNWs with an optimum reproducibility followed by thin layer engineering at nanoscale. Good overall electrical performances were obtained, with excellent electrostatic behavior (a subthreshold slope (SS) of 95 mV/dec and a drain induced barrier lowering (DIBL) of 25 mV/V) for a 15-nm gate length. Finally, a first demonstration of dual integration of n-type and p-type VNW transistors for the realization of CMOS inverter is proposed.