RESUMEN
In this paper, a broadband non-destructive and non-contact local characterization of graphene fabricated by epitaxial method on silicon carbide is demonstrated by using an interferometer-based near-field microwave microscope. First, a method has been proposed to extract the dielectric properties of silicon carbide, and finally, the graphene flake has been characterized as a resistance (â¼20 kΩ) and a small inductance (360 pH) in the frequency band (2-18 GHz). The advantage of the proposed method is that there is no need to fabricate electrodes on the sample surface for the characterization. The instrument proposed is a good candidate for the local characterization of 2D materials.
RESUMEN
Polyimide is of great interest in the field of MEMS and microtechnology. It is often used for its chemical, thermal, mechanical, and optical properties. In this paper, an original study is performed on controlled variation of polyimide film wettability. A two-step microtexturing method is developed to transform hydrophilic polyimide surfaces into a superhydrophobic surface with low magnitude of hysteresis (Δθ ≈ 0° and contact angle θ ≈ 158°). This method is based on the conception of a new kind of fakir surface with triangular cross-section micropillars, the use of a two-scale roughening, and a C(4)F(8) coating. We demonstrate that the absence of hysteresis is related to a combination of two scales of structuring and the pillar shape. The technology that has been developed results in the simultaneous fabrication of adjacent superhydrophobic and superhydrophilic small areas, which allows an effect of self-positioning of water droplets when deposited on such a checkerboard-like surface.
RESUMEN
A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.