Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry.

Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated.

III-V-on-silicon anti-colliding pulse-type mode-locked laser.

An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the first time based on a III-V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III-V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated. The generated fundamental RF tone shows a 1.7 kHz 3 dB linewidth. Over 9 mW waveguide coupled output power is demonstrated.

Frequency resolved optical gating characterization of sub-ps pulses from single-section InAs/InP quantum dash based mode-locked lasers.

Mode-locking of single-section Fabry-Pérot InAs/InP edge emitting quantum dash based lasers at 1.56 µm under continuous wave operation is studied by second-harmonic generation frequency resolved optical gating. Self-starting pulses of a width down to 374 fs can be observed after external chirp compensation using standard single-mode fiber (SMF-28). Pulse compression using different lengths of SMF-28 and pulse shape as well as phase dependence on bias conditions are investigated. Consistency with stepped-heterodyne technique for advanced pulse characterization is shown.

Near-field analysis of metallic DFB lasers at telecom wavelengths.

We image in near-field the transverse modes of semiconductor distributed feedback (DFB) lasers operating at λ ≈ 1.3 µm and employing metallic gratings. The active region is based on tensile-strained InGaAlAs quantum wells emitting transverse magnetic polarized light and is coupled via an extremely thin cladding to a nano-patterned gold grating integrated on the device surface. Single mode emission is achieved, which tunes with the grating periodicity. The near-field measurements confirm laser operation on the fundamental transverse mode. Furthermore--together with a laser threshold reduction observed in the DFB lasers--it suggests that the patterning of the top metal contact can be a strategy to reduce the high plasmonic losses in this kind of systems.

III-V-on-silicon multi-frequency lasers.

Compact multi-frequency lasers are realized by combining III-V based optical amplifiers with silicon waveguide optical demultiplexers using a heterogeneous integration process based on adhesive wafer bonding. Both devices using arrayed waveguide grating routers as well as devices using ring resonators as the demultiplexer showed lasing with threshold currents between 30 and 40 mA and output powers in the order of a few mW. Laser operation up to 60°C is demonstrated. The small bending radius allowable for the silicon waveguides results in a short cavity length, ensuring stable lasing in a single longitudinal mode, even with relaxed values for the intra-cavity filter bandwidths.

Heterogeneously integrated III-V/silicon distributed feedback lasers.

Heterogeneously integrated III-V-on-silicon second-order distributed feedback lasers utilizing an ultra-thin DVS-BCB die-to-wafer bonding process are reported. A novel DFB laser design exploiting high confinement in the active waveguide is demonstrated. A 14 mW single-facet output power coupled to a silicon waveguide, 50 dB side-mode suppression ratio and continuous wave operation up to 60°C around 1550 nm is obtained.

In situ generation of surface plasmon polaritons using a near-infrared laser diode.

We demonstrate a semiconductor laser-based approach which enables plasmonic active devices in the telecom wavelength range. We show that optimized laser structures based on tensile-strained InGaAlAs quantum wells-coupled to integrated metallic patternings-enable surface plasmon generation in an electrically driven compact device. Experimental evidence of surface plasmon generation is obtained with the slit-doublet experiment in the near-field, using near-field scanning optical microscopy measurements.

170 GHz Uni-Traveling Carrier Photodiodes for InP-based photonic integrated circuits.

We demonstrate the capability of fabricating extremely high-bandwidth Uni-Traveling Carrier Photodiodes (UTC-PDs) using techniques that are suitable for active-passive monolithic integration with Multiple Quantum Well (MQW)-based photonic devices. The devices achieved a responsivity of 0.27 A/W, a 3-dB bandwidth of 170 GHz, and an output power of -9 dBm at 200 GHz. We anticipate that this work will deliver Photonic Integrated Circuits with extremely high bandwidth for optical communications and millimetre-wave applications.

146-GHz millimeter-wave radio-over-fiber photonic wireless transmission system.

We report the experimental implementation of a wireless transmission system with a 146-GHz carrier frequency which is generated by optical heterodyning the two modes from a monolithically integrated quantum dash dual-DFB source. The monolithic structure of the device and the inherent low noise characteristics of quantum dash gain material allow us to demonstrate the transmission of a 1 Gbps ON-OFF keyed data signal with the two wavelengths in a free-running state at 146-GHz carrier wave frequency. The tuning range of the device fully covers the W-band (75 - 110 GHz) and the F-band (90 - 140 GHz).

High-speed photodiodes for InP-based photonic integrated circuits.

We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).

Linear semiconductor optical amplifiers for amplification of advanced modulation formats.

The capability of semiconductor optical amplifiers (SOA) to amplify advanced optical modulation format signals is investigated. The input power dynamic range is studied and especially the impact of the SOA alpha factor is addressed. Our results show that the advantage of a lower alpha-factor SOA decreases for higher-order modulation formats. Experiments at 20 GBd BPSK, QPSK and 16QAM with two SOAs with different alpha factors are performed. Simulations for various modulation formats support the experimental findings.

Directly modulated and fully tunable hybrid silicon lasers for future generation of coherent colorless ONU.

We propose and demonstrate asymmetric 10 Gbit/s upstream--100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.

Quantum dot SOA input power dynamic range improvement for differential-phase encoded signals.

Experimentally we find a 10 dB input power dynamic range advantage for amplification of phase encoded signals with quantum dot SOA as compared to low-confinement bulk SOA. An analysis of amplitude and phase effects shows that this improvement can be attributed to the lower alpha-factor found in QD SOA.

Experimental investigation of the timing jitter in self-pulsating quantum-dash lasers operating at 1.55 microm.

We report for the first time on the systematic measurement of timing jitter of 40-GHz self-pulsating Fabry-Perot laser based on InAs/InP quantum dashes emitting at 1.55 microm. Two different methods, one based on optical cross-correlation and one on electrical spectrum sideband integration are used and show a good agreement, yielding a jitter of 0.86 ps in the 1 MHz---20 MHz frequency range with a potential of 280 fs for optimized driving conditions. Amplitude noise and high-frequency timing jitter contributions are also discussed.

Short pulse generation using a passively mode locked single InGaAsP/InP quantum well laser.

We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.

Coherence collapse and low-frequency fluctuations in quantum-dash based lasers emitting at 1.57 mum.

Optical feedback tolerance is experimentally investigated on a 600-mum-long quantum-dash based Fabry-Pérot laser emitting at 1.57mum. While quantum-dashes are structurally intermediate to quantum-wells and quantum-dots, the observed behaviour is distinctly like that of a quantum-well based laser but with greater stability. Coherence collapse and low-frequency fluctuation regimes are observed and are reported here. The onset of the coherence collapse regime is experimentally determined and is found to vary from -29 dB to -21 dB external feedback level when increasing the current from twice to nine times the threshold current.

Phase-amplitude characterization of a high-repetition-rate quantum dash passively mode-locked laser.

We apply a novel phase-amplitude characterization method to a one-section quantum dash-based passively mode-locked laser at a 42.2 GHz repetition rate. The method relies on the measurement of the spectral phase of the longitudinal modes by the successive analysis of the correlation signal of a group of three adjacent modes. It provides both the temporal shape of the intensity and the phase of the emitted signal. A pulse of 1.5 ps of width is measured, and a pedestal is exhibited. Extinction ratio limitation is explained by investigating the origin of this pedestal. The accuracy of the method is estimated by comparing the measured autocorrelation signal and the calculated one from the phase analysis.