Broadband non-contact characterization of epitaxial graphene by near-field microwave microscopy.

In this paper, a broadband non-destructive and non-contact local characterization of graphene fabricated by epitaxial method on silicon carbide is demonstrated by using an interferometer-based near-field microwave microscope. First, a method has been proposed to extract the dielectric properties of silicon carbide, and finally, the graphene flake has been characterized as a resistance (∼20 kΩ) and a small inductance (360 pH) in the frequency band (2-18 GHz). The advantage of the proposed method is that there is no need to fabricate electrodes on the sample surface for the characterization. The instrument proposed is a good candidate for the local characterization of 2D materials.