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Recently, metal sulfides have begun to receive attention as potential cost-effective materials for thermoelectric applications beyond optoelectronic and photovoltaic devices. Herein, based on a comparative analysis of the structural and transport properties of 2D PbSnS2 and 1D PbSnS3, we demonstrate that the intrinsic effects that govern the low lattice thermal conductivity (κL) of these sulfides originate from the combination of the low dimensionality of their crystal structures with the stereochemical activity of the lone-pair electrons of cations. The presence of weak bonds in these materials, responsible for phonon scattering, results in inherently low κL of 1.0 W/m K in 1D PbSnS3 and 0.6 W/m K in 2D PbSnS2 at room temperature. However, the nature of the thermal transport is quite distinct. 1D PbSnS3 exhibits a higher thermal conductivity with a crystalline-like peak at low temperatures, while 2D PbSnS2 demonstrates glassy thermal conductivity in the entire temperature range investigated. First-principles density functional theory calculations reveal that the presence of antibonding states below the Fermi level, especially in PbSnS2, contributes to the very low κL. In addition, the calculated phonon dispersions exhibit very soft acoustic phonon branches that give rise to soft lattices and very low speeds of sounds.
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Comprehending the relationship between crystal structures and transport properties is crucial to develop materials with improved electrical and thermal properties for thermoelectric applications. In this article, we report on the complex crystal structure and physical properties of Cr2Sn3S7, a n-type magnetic semiconductor with a low energy band gap and low thermal conductivity. Importantly, we demonstrate that the high level of structural complexity is related to the coexistence of two sublattices: a host lattice, [Cr4Sn2S11]2-, characterized by a mixed Sn4+/Cr3+ occupancy of its cationic sites, and a guest lattice characterized by [Sn4S3]2+ chains, containing Sn2+ cations only, closely related to the ones encountered in the orthorhombic SnS compound. By combining experiments including X-ray diffraction with ab initio calculations of electrons and phonons, we succeeded to elucidate the origin of the low thermal conductivity in Cr2Sn3S7. We demonstrate that the low dimensionality of the [Sn4S3]2+ chains, which generates weak Sn···S interactions with the 3D host lattice, is induced by the lone pair stereochemical activity of Sn2+. This lattice softening favors strong anisotropic vibrations at low frequencies, highlighting the primordial role played by Sn2+ cations in both crystal structure dimensionality and low thermal conductivity in tin-based sulfides.
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Magnetic interactions in combination with nontrivial band structures can give rise to several exotic physical properties such as a large anomalous Hall effect, the anomalous Nernst effect, and the topological Hall effect (THE). Antiferromagnetic (AFM) materials exhibit the THE due to the presence of nontrivial spin structures. EuCuAs crystallizes in a hexagonal structure with an AFM ground state (Néel temperature â¼ 16 K). In this work, we observe a large topological Hall resistivity of â¼7.4 µΩ-cm at 13 K which is significantly higher than the giant topological Hall effect of Gd2PdSi3 (â¼3 µΩ-cm). Neutron diffraction experiments reveal that the spins form a transverse conical structure during the metamagnetic transition, resulting in the large THE. In addition, by controlling the magnetic ordering structure of EuCuAs with an external magnetic field, several fascinating topological states such as Dirac and Weyl semimetals have been revealed. These results suggest the possibility of spintronic devices based on antiferromagnets with tailored noncoplanar spin configurations.
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S-based semiconductors are attracting attention as environmentally friendly materials for energy-conversion applications because of their structural complexity and chemical flexibility. Here, we show that the delicate interplay between the chemical composition and cationic order/disorder allows one to stabilize a new sphalerite derivative phase of cubic symmetry in the Cu-Sn-S diagram: Cu22Sn10S32. Interestingly, its crystal structure is characterized by a semiordered cationic distribution, with the Cu-Sn disorder being localized on one crystallographic site in a long-range-ordered matrix. The origin of the partial disorder and its influence on the electronic and thermal transport properties are addressed in detail using a combination of synchrotron X-ray diffraction, Mössbauer spectroscopy, transmission electron microscopy, theoretical modeling, and transport property measurements. These measurements evidence that this compound behaves as a pseudogap, degenerate p-type material with very low lattice thermal conductivity (0.5 W m-1 K-1 at 700 K). We show that localized disorder is very effective in lowering κL without compromising the integrity of the conductive framework. Substituting pentavalent Sb for tetravalent Sn is exploited to lower the hole concentration and doubles the thermoelectric figure of merit ZT to 0.55 at 700 K with respect to the pristine compound. The discovery of this semiordered cubic sphalerite derivative Cu22Sn10S32 furthers the understanding of the structure-property relationships in the Cu-Sn-S system and more generally in ternary and quaternary Cu-based systems.
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Previous experimental and theoretical studies revealed that carbon insertion into the RCr2Si2 compounds drastically affects the magnetic behavior, since chromium does not carry any magnetic moment in RCr2Si2C (R = Y, La-Sm, Gd-Er) compounds in contrast to RCr2Si2 (R = Y, Sm, Gd-Lu, Th) compounds. In this study, we report on the unexpected magnetic ordering of chromium atoms in the isotype quaternary UCr2Si2C compound. While specific heat and magnetic measurements suggest a Pauli paramagnetic behavior, neutron powder diffraction reveals an antiferromagnetic ordering of the chromium substructure at high temperature ( TN > 300 K), while that of uranium remains nonmagnetically ordered down to 2 K. Its magnetic behavior, inverse in comparison to the RCr2Si2C carbides involving a magnetic lanthanide, is discussed in relation with the singularity of its crystal structure among the series. Moreover, the crystallographic structures and the structural stability of UCr2Si2C and of two other quaternary U-Cr-Si-C compounds (i.e., UCr3Si2C and U2Cr3Si2C3), based on the full occupancy of interstitial sites by carbon atoms, are discussed and compared to those of the related ternary intermetallics. Finally, the low-temperature form of UCr2Si2, corresponding to a displacive transformation around 210 K of the ThCr2Si2-type structure, is reinvestigated by considering a higher symmetry monoclinic unit cell ( C2/ m) instead of the previously reported triclinic cell ( P1Ì ). The antiferromagnetic ordering at low temperature ( TN = 30(2) K) of the uranium substructure is confirmed, and its magnetic structure is reanalyzed and discussed considering the monoclinic crystal structure.
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We report on a detailed investigation of the crystal structure and transport properties in a broad temperature range (2-723 K) of the homologous compounds (PbSe)5(Bi2Se3)3m for m = 2, 3. Single-crystal X-ray diffraction data indicate that the m = 2, 3 compounds crystallize in the monoclinic space groups C2/m (No. 12) and P21/m (No. 11), respectively. In agreement with diffraction data, high-resolution transmission electron microscopy analyses carried out on single crystals show that the three-dimensional crystal structures are built from alternating Pb-Se and m Bi-Se layers stacked along the a axis in both compounds. Scanning electron microcopy and electron-probe microanalyses reveal deviations from the nominal stoichiometry, suggesting a domain of existence in the pseudo binary phase diagram at 873 K. The complex atomic-scale structures of these compounds lead to very low lattice thermal conductivities κL that approach the glassy limit at high temperatures. A comparison of the κL values across this series unveiled an unexpected increase with increasing m from m = 1 to m = 3, in contrast to the expectation that increasing the structural complexity should tend to lower the thermal transport. This result points to a decisive role played by the Pb-Se/Bi-Se interfaces in limiting κL in this series. Both compounds behave as heavily doped n-type semiconductors with relatively low electrical resistivity and thermopower values. As a result, moderate peak ZT values of 0.25 and 0.20 at 700 K were achieved in the m = 2, 3 compounds, respectively. The inherent poor ability of these structures to conduct heat suggests that these homologous compounds may show interesting thermoelectric properties when properly optimized by extrinsic dopants.
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We report on the influence of Se substitution on the electronic band structure and thermoelectric properties (5-523 K) of the solid solution α-As2Te3-xSex (0 ≤ x ≤ 1.5). All of the polycrystalline compounds α-As2Te3-xSex crystallize isostructurally in the monoclinic space group C2/m (No. 12, Z = 4). Regardless of the Se content, chemical analyses performed by scanning electron microscopy and electron probe microanalysis indicate a good chemical homogeneity, with only minute amounts of secondary phases for some compositions. In agreement with electronic band structure calculations, neutron powder diffraction suggests that Se does not randomly substitute for Te but exhibits a site preference. These theoretical calculations further predict a monotonic increase in the band gap energy with the Se content, which is confirmed experimentally by absorption spectroscopy measurements. Increasing x up to x = 1.5 leaves unchanged both the p-type character and semiconducting nature of α-As2Te3. The electrical resistivity and thermopower gradually increase with x as a result of the progressive increase in the band gap energy. Despite the fact that α-As2Te3 exhibits very low lattice thermal conductivity κL, the substitution of Se for Te further lowers κL to 0.35 W m-1 K-1 at 300 K. The compositional dependence of the lattice thermal conductivity closely follows classical models of phonon alloy scattering, indicating that this decrease is due to enhanced point-defect scattering.
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This study shows that the design of copper-rich sulfides by mimicking natural minerals allows a new germanite-type sulfide Cu22Fe8Ge4S32 with promising thermoelectric properties to be synthesized. The Mössbauer spectroscopy and X-ray diffraction analyses provide evidence that the structure of our synthetic compound differs from that of the natural germanite mineral Cu26Fe4Ge4S32 by its much higher Cu+/Cu2+ ratio and different cationic occupancies. The coupled substitution Cu/Fe in the Cu26-xFe4+xGe4S32 series also appears as a promising approach to optimize the thermoelectric properties. The electrical resistivity, which decreases slightly as the temperature increases, shows that these materials exhibit a semiconducting behavior, but are at the border of a metallic state. The magnitudes of the electrical resistivity and Seebeck coefficient increase with x, which suggests that Fe for Cu substitution decreases the hole concentration. The thermal conductivity decreases as the temperature increases leading to a moderately low value of 1.2 W m-1 K-1 and a maximum ZT value of 0.17 at 575 K.
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Dehydration of the hybrid compound [Ni3(OH)2(tp)2(H2O)4] (1) upon heating led to the sequential removal of coordinated water molecules to give [Ni3(OH)2(tp)2(H2O)2] (2) at T1 = 433 K and thereafter anhydrous [Ni2(OH)2(tp)] (3) at T2 = 483 K. These two successive structural transformations were thoroughly characterized by powder X-ray diffraction assisted by density functional theory calculations. The crystal structures of the two new compounds 2 and 3 were determined. It was shown that at T1 (433 K) the infinite nickel oxide chains built of the repeating structural unit [Ni3(µ3-OH)2](4+) in 1 collapse and lead to infinite porous layers, forming compound 2. The second transformation at T2 (483 K) gave the expected anhydrous compound 3, which is isostructural with Co2(OH)2(tp). These irreversible transitions directly affect the magnetic behavior of each phase. Hence, 1 was found to be antiferromagnetic at TN = 4.11 K, with metamagnetic behavior with a threshold field Hc of ca. 0.6 T. Compound 2 exhibits canted antiferromagnetism below TN = 3.19 K, and 3 is ferromagnetic below TC = 4.5 K.
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We report on a detailed investigation of the crystal and electronic band structures and of the transport and thermodynamic properties of the Mo-based cluster compound Ag2Tl2Mo9Se11. This novel structure type crystallizes in the trigonal space group R3Ì c and is built of a three-dimensional network of interconnected Mo9Se11 units. Single-crystal X-ray diffraction indicates that the Ag and Tl atoms are distributed in the voids of the cluster framework, both of which show unusually large anisotropic thermal ellipsoids indicative of strong local disorder. First-principles calculations show a weakly dispersive band structure around the Fermi level as well as a semiconducting ground state. The former feature naturally explains the presence of both hole-like and electron-like signals observed in Hall effect. Of particular interest is the very low thermal conductivity that remains quasi-constant between 150 and 800 K at a value of approximately 0.6 W·m(-1)·K(-1). The lattice thermal conductivity is close to its minimum possible value, that is, in a regime where the phonon mean free path nears the mean interatomic distance. Such extremely low values likely originate from the disorder induced by the Ag and Tl atoms giving rise to strong anharmonicity of the lattice vibrations. The strongly limited ability of this compound to transport heat is the key feature that leads to a dimensionless thermoelectric figure of merit ZT of 0.6 at 800 K.
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Dynamic nuclear polarization surface enhanced NMR (DNP-SENS), Mössbauer spectroscopy, and computational chemistry were combined to obtain structural information on the active-site speciation in Sn-ß zeolite. This approach unambiguously shows the presence of framework Sn(IV)-active sites in an octahedral environment, which probably correspond to so-called open and closed sites, respectively (namely, tin bound to three or four siloxy groups of the zeolite framework).
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The discovery of novel quaternary intermetallic compounds R2MoSi2C (R = Y, Gd) in the R-Mo-Si-C system is reported. Their crystal structure was investigated using single-crystal X-ray diffraction. It is shown that the Y2MoSi2C and Gd2MoSi2C compounds crystallize in the tetragonal space group P4/mbm (Pearson symbol tP12) with unit-cell parameters a = 6.9525â (18)â Å, c = 4.1962â (16)â Å, and a = 6.9945â (16)â Å, c = 4.2020â (14)â Å, respectively.
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A new hydroxythiophenedicarboxylate metal-organic framework based on Mn(II) cations has been obtained by an aqueous two-step procedure including hydrothermal treatment. The structure of Mn(3)(OH)(2)(C(6)H(2)O(4)S)(2) has been determined ab initio from synchrotron X-ray powder diffraction data and consists of infinite inorganic ribbons which are interlinked by 2,5-thiophenedicarboxylate (tdc) molecules (monoclinic, space group P2(1)/c, a = 3.4473(1) Å, b = 19.1287(1) Å, c = 11.0069(1) Å, ß = 97.48(1)°, V = 719.65(1) Å(3), and Z = 2). Each ribbon is built of three vertex-sharing chains of edge-sharing MnO(6) octahedrons. These ribbons are bridged together by the carboxylate functions of the tdc molecule to form a pseudo-2D inorganic subnetwork, while this molecule develops in the third dimension to pillar these pseudo-2D layers. An unprecedented hexadentate symmetric bridging mode is adopted by tdc which bridges two chains of a ribbon on one side and two ribbons of a pseudo-2D inorganic subnetwork on the other side. Magnetic measurements suggest that the titled compound is antiferromagnetic below T(N) = 17.7 K. Heat capacity measurements confirm the existence of a magnetic phase transition toward a 3D long-range ordered state. These C(P)(T) data have also been used for the calculation of the thermal variations of both the adiabatic temperature change ΔT(ad) and magnetic entropy change ΔS(m) of the material, namely its magnetocaloric effect.
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The discovery of a new FeII oxalate framework of composition K2Fe[(C2O4)2(H2O)2]·0.18H2O is reported. Its crystal structure was solved by means of single crystal and powder X-ray diffraction. The new organic-inorganic hybrid compound crystallizes in the orthorhombic space group Pca21 with unit-cell parameters: a = 12.0351 (4)â Å, b = 15.1265 (5)â Å, c = 10.5562 (4)â Å. This crystal structure, containing eight chemical formula, consists of a succession of FeO4(H2O)2 octahedra and K+ cations growing along b direction. Magnetization measurements indicate that the title compound is paramagnetic over the investigated temperature range (2-300â K). Both magnetization and 57Fe Mössbauer data indicate that Fe2+ is in a high-spin state.
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Narrow band gap tin(II) chalcogenide (SnS, SnSe, SnTe) nanocrystals are of high interest for optoelectronic applications such as thin film solar cells or photodetectors. However, charge transfer and charge transport processes strongly depend on nanocrystals' surface quality. Using (119)Sn-Mössbauer spectroscopy, which is the most sensitive tool for probing the Sn oxidation state, we show that SnS nanocrystals exhibit a Sn((IV))/Sn((II)) ratio of around 20:80 before and 40:60 after five minutes exposure to air. Regardless of the tin or sulfur precursors used, similar results are obtained using six different synthesis protocols. The Sn((IV)) content before air exposure arises from surface related SnS(2) and Sn(2)S(3) species as well as from surface Sn atoms bound to oleic acid ligands. The increase of the Sn((IV)) content upon air exposure results from surface oxidation. Full oxidation of the SnS nanocrystals without size change is achieved by annealing at 500 °C in air. With the goal to prevent surface oxidation, SnS nanocrystals are capped with a cadmium-phosphonate complex. A broad photoluminescence signal centered at 600 nm indicates successful capping, which however does not reduce the air sensitivity. Finally we demonstrate that SnSe nanocrystals exhibit a very similar behavior with a Sn((IV))/Sn((II)) ratio of 43:57 after air exposure. In the case of SnTe nanocrystals, the ratio of 55:45 is evidence of a more pronounced tendency for oxidation. These results demonstrate that prior to their use in optoelectronics further surface engineering of tin chalcogenide nanocrystals is required, which otherwise have to be stored and processed under inert atmosphere.
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Magnetocaloric effect: A Gd(III)-based metal-organic framework (MOF) has an unprecedented large magnetocaloric effect around 2â K. It was shown to be an interesting magnetorefrigerant for ultralow-temperature applications, because it combines the advantages of molecular materials and the robustness of a framework with strong 3D chemical connections (see figure).
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Reported here are the synthesis and structural and topological analysis as well as a magnetic investigation of the new Co(4)(OH)(2)(C(10)H(16)O(4))(3) metal-organic framework. The structural analysis reveals a one-dimensional inorganic subnetwork based on complex chains of cobalt(II) ions in two different oxygen environments. Long alkane dioic acid molecules bridge these inorganic chains together to afford large distances and poor magnetic media between dense spin chains. The thermal dependence of the χT product provides evidence for uncompensated antiferromagnetic interactions within the cobaltous chains. In zero-field, dynamic magnetic susceptibility measurements show slow magnetic relaxation below 5.4 K while both neutron diffraction and heat capacity measurements give evidence of long-range order (LRO) below this temperature. The slow dynamics may originate from the motion of broad domain walls and is characterized by an Arrhenius law with a single energy barrier Δ(τ)/k(B) = 67(1) K for the [10-5000 Hz] frequency range. Moreover, in nonzero dc fields the ac susceptibility signal splits into a low-temperature frequency-dependent peak and a high-temperature frequency-independent peak which strongly shifts to higher temperature upon increasing the bias dc field. Heat capacity measurements have been carried out for various applied field values, and the recorded C(P)(T) data are used for the calculation of the thermal variations of both the adiabatic temperature change ΔT(ad) and magnetic entropy change ΔS(m). The deduced data show a modest magnetocaloric effect at low temperature. Its maximum moves up to higher temperature upon increasing the field variation, in relation with the field-sensibility of the intrachain magnetic correlation length.
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Conduction mechanisms in solid polymer electrolytes of Li ion batteries have always been a concern due to their theoretical limitation in conductivity value. In an attempt to increase the ionic conductivity of solid state electrolytes, used in lithium ion secondary batteries (LiBs), we studied the synthesis and conductive properties of a low molecular weight cyclic organoboron crystalline electrolyte. This electrolyte was expected to show better electrochemical properties than solid polymer electrolytes. The electrolyte was doped with LiTFSI salt via two different methods viz. (1) facile grinding of the crystalline sample with lithium salt under a nitrogen atmosphere and (2) a conventional method of solvent dissolution and evaporation under vacuum. The electrochemical properties were studied under specific composition of Li salt. The presence of crystallinity in the electrolyte can be considered as an important factor behind the high ionic conductivity of an all solid electrolyte of this type. Charge-discharge properties of the cell using the electrolyte were investigated in anodic half-cell configuration.
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Because the binary chalcogenide SnTe is an interesting Pb-free alternative to the state-of-the-art thermoelectric material PbTe, significant efforts were devoted to the optimization of its thermoelectric properties over the last few years. Here, we show that saturation-annealing treatments performed at 823, 873 or 973 K under Sn-rich conditions provide a successful strategy to prepare polycrystalline samples with a controlled concentration of Sn vacancies. Both scanning transmission electron microscopy and Mössbauer spectroscopy demonstrate the absence of Sn-rich areas at the grain boundaries in the saturation-annealed samples. Transport property measurements, performed over a wide range of temperatures (5-800 K), show that this technique enables achieving thermoelectric performances at 800 K similar to those obtained using Sn self-compensation. The three saturation annealing temperatures result in comparable transport properties across the entire temperature range due to similar hole concentrations ranging between 1.0 and 1.5 × 1020 cm-3 at 300 K. As equally observed in samples prepared by other synthetic routes, the temperature dependence of the Hall mobility evidences that charge transport is strongly affected by point-defect scattering caused by the random distribution of Sn vacancies.
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The CoSn structure type contains large interstitial void spaces that frequently host electropositive guest atoms, such as rare earth elements. In this stuffing process, an intriguing ordering occurs between the neighboring void spaces leading to a family of long-period superstructures comprising intergrowths of the ScFe6Ge6 and ScFe6Ga6 structure types. This superstucture ordering culminates in incommensurability in the REFe6Ge6-deltaGa delta systems with RE = Sc, Tb, and Lu. In this work, we derive a 3 + 1D superspace model encompassing this series of structures and investigate the origins of the structural trends in this family with electronic structure calculations, at both the LDA-DFT and extended Hückel levels. Using our 3 + 1D model, we refine the structures of four new ErFe6Ge6-deltaGa delta (0 < or = delta < or = 6) phases, two commensurate and two incommensurate, from powder X-ray diffraction data. The refinement results confirm trends observed in the Sc-, Tb-, and Lu-based series: a gradual lengthening and, eventually, turning of the q-vector as Ge is progressively exchanged for Ga. These trends, and the incommensurate ordering as a whole, are traced to a tension between two modes by which the host lattice responds to stuffing atom insertion: (1) an atomic charge modulation enhancing the anionic character of the cavity walls around the guest atoms, and (2) a positional modulation expanding the cavities occupied by guest atoms. These two modes direct the stuffing atom ordering pattern toward opposite ends of the ScFe6Ge6-ScFe6Ga6 intergrowth series. The full series of structures, complex and incommensurate, reflects various degrees of balance between these two factors.