Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip: publisher's note.

This publisher's note contains corrections to Opt. Lett.44, 5788 (2019)OPLEDP0146-959210.1364/OL.44.005788.

Low-loss TeO2-coated Si3N4 waveguides for application in photonic integrated circuits.

We report on high-quality tellurium oxide waveguides integrated on a low-loss silicon nitride wafer-scale platform. The waveguides consist of silicon nitride strip features, which are fabricated using a standard foundry process and a tellurium oxide coating layer that is deposited in a single post-processing step. We show that by adjusting the Si3N4 strip height and width and TeO2 layer thickness, a small mode area, small bend radius and high optical intensity overlap with the TeO2 can be obtained. We investigate transmission at 635, 980, 1310, 1550 and 2000 nm wavelengths in paperclip waveguide structures and obtain low propagation losses down to 0.6 dB/cm at 2000 nm. These results illustrate the potential for compact linear, nonlinear and active tellurite glass devices in silicon nitride photonic integrated circuits operating from the visible to mid-infrared.

Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip.

We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss of 0.7 dB/cm at 1479 nm based on the quality factor measured in microring resonators. Gain measurements were carried out in straight and 6.7-cm-long s-bend waveguides realized on a 2.2-cm-long chip. We measure internal net gain over the wavelength range 1860-2000 nm under 1620 nm pumping and up to 7.6 dB total gain at 1870 nm, corresponding to 1.1 dB/cm. These results are promising for the realization of highly compact thulium-doped amplifiers in the emerging 2 µm band for silicon-based photonic microsystems.

High-Q tellurium-oxide-coated silicon nitride microring resonators.

We report on tellurium-oxide (TeO2)-coated silicon nitride microring resonators with internal quality factors up to 7.3×105, corresponding to 0.5 dB/cm waveguide loss, at wavelengths around 1550 nm. The microring resonators are fabricated using a silicon nitride foundry process followed by TeO2 coating deposition in a single post-processing step. The silicon nitride strip height of 0.2 µm enables a small microring bending radius, while the TeO2 coating thickness of 0.33 µm results in a large modal overlap with the TeO2 layer. These results are a promising step towards realizing compact and high-performance linear, nonlinear, and rare-earth-doped active integrated photonic devices with this platform.

On-chip visible-to-infrared supercontinuum generation with more than 495 THz spectral bandwidth.

We report ultra-broadband supercontinuum generation in high-confinement Si3N4 integrated optical waveguides. The spectrum extends through the visible (from 470 nm) to the infrared spectral range (2130 nm) comprising a spectral bandwidth wider than 495 THz, which is the widest supercontinuum spectrum generated on a chip.

High confinement, high yield Si(3)N(4) waveguides for nonlinear optical applications.

In this paper we present a novel fabrication technique for silicon nitride (Si(3)N(4)) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si(3)N(4). Using this technique no stress-induced cracks in the Si(3)N(4) layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.