Reconfigurable Positioning of Vertically-Oriented Nanowires Around Topographical Features in an AC Electric Field.

We report the effect of topographical features on gold nanowire assemblies in a vertically applied AC electric field. Nanowires 300 nm in diameter ×2.5 µm long, and coated with ∼30 nm silica shell, were assembled in aqueous solution between top and bottom electrodes, where the bottom electrode was patterned with cylindrical dielectric posts. Assemblies were monitored in real time using optical microscopy. Dielectrophoretic and electrohydrodynamic forces were manipulated through frequency and voltage variation, organizing nanowires parallel to the field lines, i.e., standing perpendicular to the substrate surface. Field gradients around the posts were simulated and assembly behavior was experimentally evaluated as a function of patterned feature diameter and spacing. The electric field gradient was highest around these topographic features, which resulted in accumulation of vertically oriented nanowires around the post perimeters when dielectrophoresis dominated (high AC frequency) or between the posts when electrohydrodynamics dominated (low AC frequency). This general type of reconfigurable assembly, coupled with judicious choice of nanowire and post materials/dimensions, could ultimately enable new types of optical materials capable of switching between two functional states by changing the applied field conditions.

Titanium dioxide nanowire sensor array integration on CMOS platform using deterministic assembly.

Nanosensor arrays have recently received significant attention due to their utility in a wide range of applications, including gas sensing, fuel cells, internet of things, and portable health monitoring systems. Less attention has been given to the production of sensor platforms in the µW range for ultra-low power applications. Here, we discuss how to scale the nanosensor energy demand by developing a process for integration of nanowire sensing arrays on a monolithic CMOS chip. This work demonstrates an off-chip nanowire fabrication method; subsequently nanowires link to a fused SiO2 substrate using electric-field assisted directed assembly. The nanowire resistances shown in this work have the highest resistance uniformity reported to date of 18%, which enables a practical roadmap towards the coupling of nanosensors to CMOS circuits and signal processing systems. The article also presents the utility of optimizing annealing conditions of the off-chip metal-oxides prior to CMOS integration to avoid limitations of thermal budget and process incompatibility. In the context of the platform demonstrated here, directed assembly is a powerful tool that can realize highly uniform, cross-reactive arrays of different types of metal-oxide nanosensors suited for gas discrimination and signal processing systems.

Formation and frequency response of two-dimensional nanowire lattices in an applied electric field.

Ordered two-dimensional (2D) lattices were formed by assembling silica-coated solid and segmented Au nanowires between coplanar electrodes using alternating current (ac) electric fields. Dielectrophoretic forces from the ac field concentrated wires between the electrodes, with their long axis aligned parallel to the field lines. After reaching a sufficient particle density, field-induced dipolar interactions resulted in the assembly of dense 2D lattices that spanned the electrodes, a distance of at least ten wire lengths. The ends of neighboring Au wires or segments overlapped a fraction of their length to form lattice structures with a "running bond" brickwork-like pattern. The observed lattice structures were tunable in three distinct ways: (1) particle segmentation pattern, which fixed the lattice periodicity for a given field condition; (2) ac frequency, which varied lattice periodicity in real time; and (3) switching the field on/off, which converted between lattice and smectic particle organizations. Electric field simulations were performed to understand how the observed lattice periodicity depends on the assembly conditions and particle segmentation. Directed self-assembly of well-ordered 2D metallic nanowire lattices that can be designed by Au striping pattern and reconfigured by changes in field conditions could enable new types of switchable optical or electronic devices.

Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

Deterministic assembly of functional nanostructures using nonuniform electric fields.

The force induced on anisotropic nanoparticles in a nonuniform electric field can be used to attract, orient, and position the nanoparticles with respect to microelectrodes on a surface. For polarizable nanomaterials, such as nanowires, carbon nanotubes, or graphene sheets suspended in solvent, this dielectrophoretic force results in movement to regions of highest electric field strength. This review discusses the origin of this force, its production by different microelectrode designs, and its use for nanomaterials assembly, with a focus on efforts toward heterogeneous integration with on-chip electronics for single-particle characterization and device structures.

Biorecognition by DNA oligonucleotides after exposure to photoresists and resist removers.

Combining biological molecules with integrated circuit technology is of considerable interest for next generation sensors and biomedical devices. Current lithographic microfabrication methods, however, were developed for compatibility with silicon technology rather than bioorganic molecules, and consequently it cannot be assumed that biomolecules will remain attached and intact during on-chip processing. Here, we evaluate the effects of three common photoresists (Microposit S1800 series, PMGI SF6, and Megaposit SPR 3012) and two photoresist removers (acetone and 1165 remover) on the ability of surface-immobilized DNA oligonucleotides to selectively recognize their reverse-complementary sequence. Two common DNA immobilization methods were compared: adsorption of 5'-thiolated sequences directly to gold nanowires and covalent attachment of 5'-thiolated sequences to surface amines on silica coated nanowires. We found that acetone had deleterious effects on selective hybridization as compared to 1165 remover, presumably due to incomplete resist removal. Use of the PMGI photoresist, which involves a high temperature bake step, was detrimental to the later performance of nanowire-bound DNA in hybridization assays, especially for DNA attached via thiol adsorption. The other three photoresists did not substantially degrade DNA binding capacity or selectivity for complementary DNA sequences. To determine whether the lithographic steps caused more subtle damage, we also tested oligonucleotides containing a single base mismatch. Finally, a two-step photolithographic process was developed and used in combination with dielectrophoretic nanowire assembly to produce an array of doubly contacted, electrically isolated individual nanowire components on a chip. Postfabrication fluorescence imaging indicated that nanowire-bound DNA was present and able to selectively bind complementary strands.

Nanoresonator chip-based RNA sensor strategy for detection of circulating tumor cells: response using PCA3 as a prostate cancer marker.

There is widespread interest in circulating tumor cells (CTCs) in blood. Direct detection of CTCs (often < 1/mL) is complicated by a number of factors, but the presence of ∼10(3) to 10(4) copies of target RNA per CTC, coupled with simple enrichments, can greatly increase detection capability. In this study we used resonance frequency shifts induced by mass-amplifying gold nanoparticles to detect a hybridization sandwich bound to functionalized nanowires. We selected PCA3 RNA as a marker for prostate cancer, optimized antisense binding sites, and defined conditions allowing single nucleotide mismatch discrimination, and used a hybrid resonator integration scheme, which combines elements of top-down fabrication with strengths of bottom-up fabrication, with a view to enable multiplexed sensing. Bound mass calculated from frequency shifts matched mass estimated by counting gold nanoparticles. This represents the first demonstration of use of such nanoresonators, which show promise of both excellent specificity and quantitative sensitivity.

Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors.

Tunnel field-effect transistors were fabricated from axially doped silicon nanowire p-n junctions grown via the vapor-liquid-solid method. Following dry thermal oxidation to form a gate dielectric shell, the nanowires have a p-n-n(+) doping profile with an abrupt n-n(+) junction, which was revealed by scanning capacitance microscopy. The lightly doped n-segment can be inverted to p(+) by modulating the top gate bias, thus forming an abrupt gated p(+)-n(+) junction. A band-to-band tunneling current flows through the electrostatically doped p(+)-n(+) junction when it is reverse biased. Current-voltage measurements performed from 375 down to 4.2 K show two different regimes of tunneling current at high and low temperatures, indicating that there are both direct band-to-band and trap-assisted tunneling paths.

Crossed-nanowire molecular junctions: a new multispectroscopy platform for conduction--structure correlations.

We report a crossed-nanowire molecular junction array platform that enables direct measurement of current-voltage-temperature characteristics simultaneously with inelastic electron tunneling and Raman vibrational spectra on the same junction. Measurements on dithiol-terminated oligo(phenylene-ethynylene) junctions show both spectroscopies interrogate the gap-confined molecules to reveal distinct molecular features. This versatile platform allows investigation of advanced phenomena such as molecular switching and cooperative effects with the flexible ability to scale both the junction geometries and array sizes.

Synthesizing low loss negative index metamaterial stacks for the mid-infrared using genetic algorithms.

Negative index metamaterial designs for the mid-infrared with low absorption and impedance mismatch losses are presented. A robust genetic algorithm is employed to optimize the flexible metamaterial structure for targeted refractive index and impedance values. A new figure of merit is introduced to evaluate the impedance match of the metamaterial to free space. Two designs are presented demonstrating low-loss characteristics for a thin metamaterial with two metal screens and a thick metamaterial stack with five screens. The device performance is analyzed when adding more screens to the structure, revealing that optimizing a thick stack produces a metamaterial with properties approaching those of a bulk material.