RESUMEN
Graphene films were grown by chemical vapor deposition on Cu foil. The obtained samples were characterized by Raman spectroscopy, ellipsometry, X-ray photoelectron spectroscopy and electron back-scatter diffraction. We discuss the time-dependent changes in the samples, estimate the thickness of emerging Cu2O beneath the graphene and check the orientation-dependent affinity to oxidation of distinct Cu grains, which also governs the manner in which the initial strong Cu-graphene coupling and strain in the graphene lattice is released. Effects of electropolishing on the quality and the Raman response of the grown graphene layers are studied by microtexture polarization analysis. The obtained data are compared with the Raman signal of graphene after transfer on glass substrate revealing the complex interaction of graphene with the Cu substrate.
RESUMEN
In this work, a novel approach is suggested to grow bilayer fibers by combining electrospinning and atomic layer deposition (ALD). Polyvinyl alcohol (PVA) fibers are obtained by electrospinning and subsequently covered with thin Al2O3 deposited at a low temperature by ALD. To burn the PVA core, the fibrous structures are subjected to high-temperature annealing. Differential scanning calorimetry (DSC) analysis of the PVA mat is performed to establish the proper annealing regime for burning off the PVA core and obtaining hollow fibers. The hollow fibers thus formed are covered with a ZnO layer deposited by ALD at a higher temperature within the ALD window of ZnO. This procedure allows us to prepare ZnO films with better crystallinity and stoichiometry. Different characterization methods-SEM, ellipsometry, XRD, and XPS-are performed at each step to investigate the processes in detail.
RESUMEN
ZnO doped with transition metals (Co, Fe, or Ni) that have non-compensated electron spins attracts particular interest as it can induce various magnetic phenomena and behaviors. The advanced atomic layer deposition (ALD) technique makes it possible to obtain very thin layers of doped ZnO with controllable thicknesses and compositions that are compatible with the main microelectronic technologies, which further boosts the interest. The present study provides an extended analysis of the magneto-optical MO Kerr effect and the dielectric properties of (Co, Fe, or Ni)-doped ZnO films prepared by ALD. The structural, magneto-optical, and dielectric properties were considered in relation to the technological details of the ALD process and the corresponding dopant effects. All doped samples show a strong MO Kerr behavior with a substantial magnetization response and very high values of the Kerr polarization angle, especially in the case of ZnO/Fe. In addition, the results give evidence that Fe-doped ZnO also demonstrates a ferroelectric behavior. In this context, the observed rich and versatile physical nature and functionality open up new prospects for the application of these nanostructured materials in advanced electronic, spintronic, and optical devices.