First-Principles Study of CuGaO2 Polymorphs: Delafossite α-CuGaO2 and Wurtzite ß-CuGaO2.

The electronic structures of delafossite α-CuGaO2 and wurtzite ß-CuGaO2 were calculated based on density functional theory using the local density approximation functional including the Hubbard correction (LDA+U). The differences in the electronic structure and physical properties between the two polymorphs were investigated in terms of their crystal structures. Three major structural features were found to influence the electronic structure. The first feature is the atomic arrangements of cations. In the conduction band of α-CuGaO2 with a layered structure of Cu2O and Ga2O3, Cu and Ga states do not mix well; the lower part of the conduction band mainly consists of Cu 4s and 4p states, and the upper part consists of Ga 4s and 4p states. By contrast, in ß-CuGaO2, which is composed of CuO4 and GaO4 tetrahedra, Cu and Ga states are well-mixed. The second feature is the coordination environment of Cu atoms; the breaking of degeneracy of Cu 3d orbitals is determined by the crystal field. Dispersion of the Cu 3d valence band of ß-CuGaO2, in which Cu atoms are tetrahedrally coordinated to oxygen atoms, is smaller than those in α-CuGaO2, in which Cu atoms are linearly coordinated to oxygen atoms; this results in a larger absorption coefficient and larger hole effective mass in ß-CuGaO2 than in α-CuGaO2. The interatomic distance between Cu atoms-the third feature-also influences the dispersion of the Cu 3d valence band (i.e., the effective hole mass); the effective hole mass decreases with decreasing interatomic distance between Cu atoms in each structure. The results obtained are valuable for understanding the physical properties of oxide semiconductors containing monovalent copper and silver.

Structural and thermal properties of ternary narrow-gap oxide semiconductor; wurtzite-derived ß-CuGaO2.

The crystal structure of the wurtzite-derived ß-CuGaO2 was refined by Rietveld analysis of high-resolution powder diffraction data obtained from synchrotron X-ray radiation. Its structural characteristics are discussed in comparison with the other I-III-VI2 and II-VI oxide semiconductors. The cation and oxygen tetrahedral distortions of the ß-CuGaO2 from an ideal wurtzite structure are small. The direct band-gap nature of the ß-CuGaO2, unlike ß-Ag(Ga,Al)O2, was explained by small cation and oxygen tetrahedral distortions. In terms of the thermal stability, the ß-CuGaO2 irreversibly transforms into delafossite α-CuGaO2 at >460 °C in an Ar atmosphere. The transformation enthalpy was approximately -32 kJ mol(-1), from differential scanning calorimetry. This value is close to the transformation enthalpy of CoO from the metastable zincblende form to the stable rock-salt form. The monovalent copper in ß-CuGaO2 was oxidized to divalent copper in an oxygen atmosphere and transformed into a mixture of CuGa2O4 spinel and CuO at temperatures >350 °C. These thermal properties indicate that ß-CuGaO2 is stable at ≤300 °C in both reducing and oxidizing atmospheres while in its metastable form. Consequently, this material could be of use in optoelectronic devices that do not exceed 300 °C.

Wurtzite-derived ternary I-III-O2 semiconductors.

Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived ß-NaFeO2 structure are limited. Wurtzite-derived ß-LiGaO2 and ß-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. ß-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I-III-O2 semiconductors is still limited. In this paper we review previous studies on ß-LiGaO2, ß-AgGaO2 and ß-CuGaO2 to determine guiding principles for the development of wurtzite-derived I-III-O2 semiconductors.

Wurtzite CuGaO2: a new direct and narrow band gap oxide semiconductor applicable as a solar cell absorber.

An oxide semiconductor ß-CuGaO2 with a wurtzite-derived ß-NaFeO2 structure has been synthesized. Structural characterization has been carried out by Rietveld analysis using XRD and SAED, and it was shown that the lattice size is very close to that of zinc oxide. The optical absorption spectrum indicated that the band gap is 1.47 eV, which matches the band gap required to achieve the theoretical maximum conversion efficiency for a single-junction solar cell. The thermoelectromotive force indicated p-type conduction in its intrinsic state. Density functional theory calculations were performed to understand the electronic structure and optical properties of the semiconductor. These calculations indicated that ß-CuGaO2 is a direct semiconductor and intense absorption of light occurs near the band edge. These properties render this new material promising as an absorber in solar cells.