Comparative advantages of a type-II superlattice barrier over an AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors.

The barrier layer in InAs/GaSb LWIR nBn detector is usually composed of AlGaSb alloy, which has a non-negligible valence band offset and is sensitive to chemical solutions. In this work, we investigated a type-II superlattice (T2SL) barrier that is homogeneous with the T2SL absorber layer in order to resolve these drawbacks of the AlGaSb barrier. The lattice mismatch of the T2SL barrier was smaller than that of the AlGaSb barrier. At -70mV and 80 K, the dark current density and the noise equivalent temperature difference of the nBn devices with the T2SL barrier were 4.4×10-6A/cm2 and 33 mK, respectively.

Robust Wireless Sensor and Actuator Networks for Networked Control Systems.

The stability guarantee of wireless networked control systems is still challenging due to the complex interaction among the layers and the vulnerability to network faults, such as link and node failures. In this paper, we propose a robust wireless sensor and actuator network (R-WSAN) to maintain the control stability of multiple plants over the spatial-temporal changes of wireless networks. The proposed joint design protocol combines the distributed controller of control systems and the clustering, resource scheduling, and control task sharing scheme of wireless networks over a hierarchical cluster-based network. In particular, R-WSAN decouples the tasks from the inherently unreliable nodes and allows control tasks to share between nodes of wireless networks. Our simulations demonstrate that R-WSAN provides the enhanced resilience to the network faults for sensing and actuation without significantly disrupting the control performance.

Ferroelectric nanoparticle-embedded sponge structure triboelectric generators.

We report high-performance triboelectric nanogenerators (TENGs) employing ferroelectric nanoparticles (NPs) embedded in a sponge structure. The ferroelectric BaTiO3 NPs inside the sponge structure play an important role in increasing surface charge density by polarized spontaneous dipoles, enabling the packaging of TENGs even with a minimal separation gap. Since the friction surfaces are encapsulated in the packaged device structure, it suffers negligible performance degradation even at a high relative humidity of 80%. The TENGs also demonstrated excellent mechanical durability due to the elasticity and flexibility of the sponge structure. Consequently, the TENGs can reliably harvest energy even under harsh conditions. The approach introduced here is a simple, effective, and reliable way to fabricate compact and packaged TENGs for potential applications in wearable energy-harvesting devices.

Transmission Scheduling Schemes of Industrial Wireless Sensors for Heterogeneous Multiple Control Systems.

The transmission scheduling scheme of wireless networks for industrial control systems is a crucial design component since it directly affects the stability of networked control systems. In this paper, we propose a novel transmission scheduling framework to guarantee the stability of heterogeneous multiple control systems over unreliable wireless channels. Based on the explicit control stability conditions, a constrained optimization problem is proposed to maximize the minimum slack of the stability constraint for the heterogeneous control systems. We propose three transmission scheduling schemes, namely centralized stationary random access, distributed random access, and Lyapunov-based scheduling scheme, to solve the constrained optimization problem with a low computation cost. The three proposed transmission scheduling schemes were evaluated on heterogeneous multiple control systems with different link conditions. One interesting finding is that the proposed centralized Lyapunov-based approach provides almost ideal performance in the context of control stability. Furthermore, the distributed random access is still useful for the small number of links since it also reduces the operational overhead without significantly sacrificing the control performance.

Induced dipole in vanadium-doped zinc oxide nanosheets and its effects on photoelectrochemical water splitting.

Appropriate control of energy band bending at the interface between semiconductors and electrolytes are closely related to performance of photoelectrochemical (PEC) water splitting. Dipoles formed near the surface of semiconductors induces energy band bending at the interface. Energy band bending control has been demonstrated by employing charged molecules and piezoelectric materials. However, chemical and piezoelectric approaches have demerit of chemical instability and inducement of instantaneous dipole, respectively. To overcome these problems, we adopted the ferroelectric material for PEC water splitting, where spontaneous dipoles in the material can be oriented by applying external electric field. In this work, we hydrothermally synthesized vanadium (V)-doped ferroelectric ZnO nanosheets and employed to systematically investigate the dipole effect on performance of V-doped ZnO PEC for water oxidation. Consequently, positively polarized V-doped ZnO photoanode exhibits 125% enhanced water splitting efficiency compared to negatively polarized ones due to favorable band bending for carrier transport from semiconductor to water.

Scalable and enhanced triboelectric output power generation by surface functionalized nanoimprint patterns.

We report nanoimprint lithographic submicron surface patterning for scalable output power generation and performance enhancement in triboelectric nanogenerators (TENGs). Specifically, one contact surface of a TENG is nanoimprinted with polyurethane acrylate (PUA) lines in different pitches and the counter contact surface is coated with perfluoropolyether (PFPE). The results show that a TENG with 200 nm pitch PUA lines exhibits voltage and current up to ∼430 V and ∼55 µA cm(-2), generating about a sixfold higher output power than that with a flat PUA surface at an applied force of 0.3 MPa. In addition, scalable output power was obtained by adjusting line pitches. Further enhancement in output power was also demonstrated by chemically functionalizing the PUA line patterns with poly (diallyldimethylammonium chloride) (PDDA). The PDDA functionalization boosted voltage and current up to ∼500 V and ∼100 µA cm(-2), respectively, which corresponds to ∼50% power density enhancement. The approach introduced here is a simple, effective, scalable and reproducible way to fabricate TENGs.

Solvent-assisted optimal BaTiO3 nanoparticles-polymer composite cluster formation for high performance piezoelectric nanogenerators.

We report on an optimal BaTiO3-P(VDF-HFP) composite thin-film formation process for high performance piezoelectric nanogenerators (NGs). By examining different solvent ratios in a solvent-assisted composite thin film formation process, the BTO nanoparticle (NPs) clustering and related performance enhancements were carefully investigated. Using the optimal process, the fabricated BTO NGs exhibited an excelling output power performance. Under a compressive force of ∼0.23 MPa normal to the surface, the measured open-circuit output voltage and short-circuit current were over 110 V and 22 µA, respectively, with a corresponding peak output power density of 0.48 Wcm(-3). Our results clearly demonstrate the effectiveness of a solvent-assisted BTO cluster formation process for fabricating high performance piezoelectric energy harvesting devices.

High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors.

Creating a high-frequency electron system demands a high saturation velocity (υsat). Herein, we report the high-field transport properties of multilayer van der Waals (vdW) indium selenide (InSe). The InSe is on a hexagonal boron nitride substrate and encapsulated by a thin, noncontinuous In layer, resulting in an impressive electron mobility reaching 2600 cm2/(V s) at room temperature. The high-mobility InSe achieves υsat exceeding 2 × 107 cm/s, which is superior to those of other gapped vdW semiconductors, and exhibits a 50-60% improvement in υsat when cooled to 80 K. The temperature dependence of υsat suggests an optical phonon energy (ℏωop) for InSe in the range of 23-27 meV, previously reported values for InSe. It is also notable that the measured υsat values exceed what is expected according to the optical phonon emission model due to weak electron-phonon scattering. The superior υsat of our InSe, despite its relatively small ℏωop, reveals its potential for high-frequency electronics, including applications to control cryogenic quantum computers in close proximity.

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires.

We examine the impact of shell content and the associated hole confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires (NWs). Using NWs with different Si(x)Ge(1-x) shell compositions (x = 0.5 and 0.7), we fabricate NW field-effect transistors (FETs) with highly doped source/drain and examine their characteristics dependence on shell content. The results demonstrate a 2-fold higher mobility at room temperature, and a 3-fold higher mobility at 77K in the NW FETs with higher (x = 0.7) Si shell content by comparison to those with lower (x = 0.5) Si shell content. Moreover, the carrier mobility shows a stronger temperature dependence in Ge-Si(x)Ge(1-x) core-shell NWs with high Si content, indicating a reduced charge impurity scattering. The results establish that carrier confinement plays a key role in realizing high mobility core-shell NW FETs.

Extremely bendable, high-performance integrated circuits using semiconducting carbon nanotube networks for digital, analog, and radio-frequency applications.

Solution-processed thin-films of semiconducting carbon nanotubes as the channel material for flexible electronics simultaneously offers high performance, low cost, and ambient stability, which significantly outruns the organic semiconductor materials. In this work, we report the use of semiconductor-enriched carbon nanotubes for high-performance integrated circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The as-obtained thin-film transistors (TFTs) exhibit highly uniform device performance with on-current and transconductance up to 15 µA/µm and 4 µS/µm. By performing capacitance-voltage measurements, the gate capacitance of the nanotube TFT is precisely extracted and the corresponding peak effective device mobility is evaluated to be around 50 cm(2)V(-1)s(-1). Using such devices, digital logic gates including inverters, NAND, and NOR gates with superior bending stability have been demonstrated. Moreover, radio frequency measurements show that cutoff frequency of 170 MHz can be achieved in devices with a relatively long channel length of 4 µm, which is sufficient for certain wireless communication applications. This proof-of-concept demonstration indicates that our platform can serve as a foundation for scalable, low-cost, high-performance flexible electronics.

Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates.

This paper reports the radio frequency (RF) performance of InAs nanomembrane transistors on both mechanically rigid and flexible substrates. We have employed a self-aligned device architecture by using a T-shaped gate structure to fabricate high performance InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) with channel lengths down to 75 nm. RF measurements reveal that the InAs devices made on a silicon substrate exhibit a cutoff frequency (f(t)) of ∼165 GHz, which is one of the best results achieved in III-V MOSFETs on silicon. Similarly, the devices fabricated on a bendable polyimide substrate provide a f(t) of ∼105 GHz, representing the best performance achieved for transistors fabricated directly on mechanically flexible substrates. The results demonstrate the potential of III-V-on-insulator platform for extremely high-frequency (EHF) electronics on both conventional silicon and flexible substrates.

III-V complementary metal-oxide-semiconductor electronics on silicon substrates.

One of the major challenges in further advancement of III-V electronics is to integrate high mobility complementary transistors on the same substrate. The difficulty is due to the large lattice mismatch of the optimal p- and n-type III-V semiconductors. In this work, we employ a two-step epitaxial layer transfer process for the heterogeneous assembly of ultrathin membranes of III-V compound semiconductors on Si/SiO(2) substrates. In this III-V-on-insulator (XOI) concept, ultrathin-body InAs (thickness, 13 nm) and InGaSb (thickness, 7 nm) layers are used for enhancement-mode n- and p- MOSFETs, respectively. The peak effective mobilities of the complementary devices are ∼1190 and ∼370 cm(2)/(V s) for electrons and holes, respectively, both of which are higher than the state-of-the-art Si MOSFETs. We demonstrate the first proof-of-concept III-V CMOS logic operation by fabricating NOT and NAND gates, highlighting the utility of the XOI platform.

Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors.

As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, the use of ultrathin (thickness, ~2.5 nm) InAs cladding layers results in drastic performance enhancements arising from (i) surface passivation of the InGaSb channel, (ii) mobility enhancement due to the confinement of holes in InGaSb, and (iii) low-resistance, dopant-free contacts due to the type III band alignment of the heterojunction. The fabricated p-FETs display a peak effective mobility of ~820 cm(2)/(V s) for holes with a subthreshold swing of ~130 mV/decade. The results present an important advance in the field of III-V electronics.

Conductivity-Controlled Polyvinylidene Fluoride Nanofiber Stack for Absorption-Dominant Electromagnetic Interference Shielding Materials.

This work presents a novel method for achieving lightweight electromagnetic interference (EMI) shielding materials with high EMI shielding effectiveness (SE) through absorption-dominant mechanisms, utilizing only organic polymer nanofibers (NFs). Instead of incorporating high-density fillers, the approach involves adjusting the concentrations of iron chloride in the NFs and subsequent vapor phase polymerization (VPP) to control the polymerization density of poly(3,4-ethylenedioxythiophene) (PEDOT) on the surface of polyvinylidene fluoride (PVDF) NFs. This process results in NF layers with varying conductivity, creating a conductivity gradient structure. The conductivity gradient structure of the NF layers significantly enhances absorptivity by reducing impedance mismatches between the shielding material and the surrounding air, as well as between different interlayers. This reduction in impedance mismatches allows for efficient dissipation of absorbed electromagnetic (EM) waves within the highly conductive NF layer. This improved absorptivity is also attributed to the attenuation of EM wave energy through multiple reflections and scattering within the NF pores. Moreover, the gradient structure of the NF layers promotes interfacial polarization, further contributing to the effective absorption of electromagnetic waves. As a result, a high absolute EMI SE (SSEt) of 12,390 dB·cm2 g-1 with low reflectivity (0.32) was achieved without compromising the lightweight and flexible properties.

Synergistic Enhancement of Filtering Efficiency and Antibacterial Performance of a Nanofiber Air Filter Decorated with Electropolarized Lithium-Doped ZnO Nanorods.

According to clinical case reports, bacterial co-infection with COVID-19 can significantly increase mortality, with Staphylococcus aureus (S. aureus) being one of the most common pathogens causing complications such as pneumonia. Thus, during the pandemic, research on imparting air filters with antibacterial properties was actively initiated, and several antibacterial agents were investigated. However, air filters with inorganic nanostructures on organic nanofibers (NFs) have not been investigated extensively. This study aimed to demonstrate the efficiency of electropolarized poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) NFs decorated with Li-doped ZnO nanorods (NRs) to improve the filtering ability and antibacterial activity of the ultrathin air filter. The surfactant was loaded onto the ZnO─known for its biocompatibility and low toxicity─nanoparticles (NPs) and transferred to the outer surface of the NFs, where Li-doped ZnO NRs were grown. The Li-doped ZnO NR-decorated NF effectively enhanced the physical filtration efficiency and antibacterial properties. Additionally, by exploiting the ferroelectric properties of Li-doped ZnO NRs and PVDF-TrFE NFs, the filter was electropolarized to increase its Coulombic interaction with PMs and S. aureus. As a result, the filter exhibited a 90% PM1.0 removal efficiency and a 99.5% sterilization rate against S. aureus. The method proposed in this study provides an effective route for simultaneously improving the air filter performance and antibacterial activity.

Recent Advances in Triboelectric Nanogenerators: From Technological Progress to Commercial Applications.

Serious climate changes and energy-related environmental problems are currently critical issues in the world. In order to reduce carbon emissions and save our environment, renewable energy harvesting technologies will serve as a key solution in the near future. Among them, triboelectric nanogenerators (TENGs), which is one of the most promising mechanical energy harvesters by means of contact electrification phenomenon, are explosively developing due to abundant wasting mechanical energy sources and a number of superior advantages in a wide availability and selection of materials, relatively simple device configurations, and low-cost processing. Significant experimental and theoretical efforts have been achieved toward understanding fundamental behaviors and a wide range of demonstrations since its report in 2012. As a result, considerable technological advancement has been exhibited and it advances the timeline of achievement in the proposed roadmap. Now, the technology has reached the stage of prototype development with verification of performance beyond the lab scale environment toward its commercialization. In this review, distinguished authors in the world worked together to summarize the state of the art in theory, materials, devices, systems, circuits, and applications in TENG fields. The great research achievements of researchers in this field around the world over the past decade are expected to play a major role in coming to fruition of unexpectedly accelerated technological advances over the next decade.

Enhanced Output Performance of a Flexible Piezoelectric Nanogenerator Realized by Lithium-Doped Zinc Oxide Nanowires Decorated on MXene.

A flexible piezoelectric composite is composed of a polymer matrix and piezoelectric ceramic fillers to achieve good mechanical flexibility and processability. The overall piezoelectric performance of a composite is largely determined by the piezoelectric filler inside. Thus, different dispersion methods and additives that can promote the dispersion of piezoelectric ceramics and optimal composite structures have been actively investigated. However, relatively few attempts have been made to develop a filler that can effectively contribute to the performance enhancement of piezoelectric devices. In the present work, we introduce the fabrication and performance of the composite piezoelectric devices composed of Li-doped ZnO nanowires (Li: ZnO NWs) grown on the surface of MXene (Ti3C2) via the hydrothermal process. Through this approach, a semiconductor-metal hybrid structure is formed, increasing the overall permittivity. Moreover, the Ti3C2 layer can serve as a local ground in the composite so that the ferroelectric phase-transformed Li: ZnO NWs grown on its surface can be more effectively polarized during the poling process. In addition, the NW-covered surface of Ti3C2 prevents the aggregation of metallic Ti3C2 particles, promoting a more uniform electric field distribution during the poling process. As a result, the output performance of the piezoelectric nanogenerator (PENG) fabricated with a Li: ZnO NW/Ti3C2 composite was greatly improved compared to that of the devices fabricated with Li: ZnO NWs without the Ti3C2 platform. Specifically, the Li: ZnO NW/Ti3C2 composite piezoelectric nanogenerator (PENG) demonstrated a twofold higher output power density (∼9 µW/cm2) compared with the values obtained from the PENG devices based on Li: ZnO NWs. The approach introduced in this work can be easily adopted for an effective ferroelectric filler design to improve the output performance of the piezoelectric composite.

Lateral spin injection in germanium nanowires.

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and detection in germanium nanowires, by using ferromagnetic metal contacts and tunnel barriers for contact resistance engineering. Using data measured from over 80 samples, we map out the contact resistance window for which lateral spin transport is observed, manifestly showing the conductivity matching required for spin injection. Our analysis, based on the spin diffusion theory, indicates that the spin diffusion length is larger than 100 mum in germanium nanowires at 4.2 K.

Enhanced Electrochemical Performance of Micro-Supercapacitors Via Laser-Scribed Cobalt/Reduced Graphene Oxide Hybrids.

The evolution of "smart life," which connects all internet-of-things (IoT) microdevices and microsensors under wireless communication grids, requires microscale energy storage devices with high power and energy density and long-term cyclability to integrate them with sustainable power generators. Instead of Li-ion batteries with a short lifetime, pseudocapacitors with longer or infinite cyclability and high-power density have been considered as efficient energy storage devices for IoT. However, the design and fabrication of microscale pseudocapacitors have difficulties in patterning microscale electrodes when loading active materials at specific points of the electrodes using conventional microfabrication methods. Here, we developed a facile, one-step fabrication method of micro-supercapacitors (MSCs) through the in situ formation of Co metals and the reduced graphene oxides (rGOs) in a one-pot laser scribing process. The prepared Co/rGO MSC thus exhibited four times higher capacitance than the rGO MSC, due to the Faradaic charge capacitance behavior of the Co/rGO composites.

Enhanced Piezoelectric Output Performance of the SnS2/SnS Heterostructure Thin-Film Piezoelectric Nanogenerator Realized by Atomic Layer Deposition.

Recently, the inherent piezoelectric properties of the 2D transition-metal dichalcogenides (TMDs) tin monosulfide (SnS) and tin disulfide (SnS2) have attracted much attention. Thus the piezoelectricity of these materials has been theoretically and experimentally investigated for energy-harvesting devices. However, the piezoelectric output performance of the SnS2- or SnS-based 2D thin film piezoelectric nanogenerator (PENG) is still relatively low, and the fabrication process is not suitable for practical applications. Here we report the formation of the SnS2/SnS heterostructure thin film for the enhanced output performance of a PENG using atomic layer deposition (ALD). The piezoelectric response of the heterostructure thin film was increased by ∼40% compared with that of the SnS2 thin film, attributed to large band offset induced by the heterojunction formation. Consequently, the output voltage and current density of the heterostructure PENG were 60 mV and 11.4 nA/cm2 at 0.6% tensile strain, respectively. In addition, thickness-controllable large-area uniform thin-film deposition via ALD ensures that the reproducible output performance is achieved and that the output density can be lithographically adjusted depending on the applications. Therefore, the SnS2/SnS heterostructure PENG fabricated in this work can be employed to develop a flexible energy-harvesting device or an attachable self-powered sensor for monitoring pulse and human body movement.