Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures.

Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.

Coulomb Screening and Scattering in Atomically Thin Transistors across Dimensional Crossover.

Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction distance, and density of Coulomb impurities. We systematically collect and analyze the trends of electron mobility with respect to the above factors, realized by synergic modulations on channel thicknesses and gating modes in dual-gated MoS2 transistors with asymmetric dielectric cleanliness. Strict configurative form factors are developed to capture the subtle parametric changes across dimensional crossover. A full diagram of the carrier scattering mechanisms, in particular on the pronounced Coulomb scattering, is unfolded. Moreover, we clarify the presence of up to 40% discrepancy in mobility by considering the permittivity modification across dimensional crossover. The understanding is useful for exploiting atomically thin body transistors for advanced electronics.

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures.

Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature. Under higher growth temperatures, the twist angles between successive nanoplates of the GeS mesowires (MWs) are statistically smaller, which can be understood by the dynamics of the catalyst during the growth. Moreover, we fabricate self-assembled helical heterostructures by introducing germanium selenide (GeSe) onto helical GeS crystals via edge epitaxy. Besides the helical architecture, the moiré superlattices at the twisted interfaces are also inherited. Compared with GeS MWs, helical GeSe/GeS heterostructures exhibit improved electrical conductivity and photoresponse. These results manifest new opportunities in future electronics and optoelectronics by harnessing 3D twistronics based on vdWs materials.

64-Pixel Mo80Si20 superconducting nanowire single-photon imager with a saturated internal quantum efficiency at 1.5 µm.

A superconducting nanowire single-photon imager (SNSPI) uses a time-multiplexing method to reduce the readout complexity. However, due to the serial connection, the nanowire should be uniform so that a common bias can set all segments of the nanowire to their maximum detection efficiency, which becomes more challenging as the scalability (i.e., the length of the nanowire) increases. Here, we have developed a 64-pixel SNSPI based on amorphous Mo80Si20 film, which yielded a uniform nanowire and slow transmission line. Adjacent detectors were separated by delay lines, giving an imaging field of 270 µm × 240 µm. Benefiting from the high kinetic inductance of Mo80Si20 films, the delay line gave a phase velocity as low as 4.6 µm/ps. The positions of all pixels can be read out with a negligible electrical cross talk of 0.02% by using cryogenic amplifiers. The timing jitter was 100.8 ps. Saturated internal quantum efficiency was observed at a wavelength of 1550 nm. These results demonstrate that amorphous film is a promising material for achieving SNSPIs with large scalability and high efficiency.

[The Association between the Level of Plasma D-dimer and Disease Severity and Prognosis of Mycoplasma pneumoniae Pneumonia in Children].

OBJECTIVE: To explore the association between the levels of plasma D-dimer and the disease severity and prognosis of Mycoplasma pneumoniae pneumonia (MPP) in children. METHODS: We retrospectively analyzed the clinical data of pediatric MPP patients who were admitted in our hospital between January 1, 2016 and December 31, 2018. According to the peak value of D-dimer, patients were divided into the normal group (D-dimer<0.55 mg/L) and the elevated group (D-dimer≥0.55 mg/L). Information regarding the demographics, clinical manifestations, auxiliary examinations and treatments of patients in the two groups was compared. RESULTS: Of the 231 MPP patients included in the study, 70 were in the normal group and 161 were in the elevated group. The age of patients in the D-dimer elevated group was significantly higher than that of the normal group ( P<0.01). Compared with the normal group, the elevated group had longer lengths of fever, hospital stay and antibiotic therapy, and more severe radiographic manifestations (all P<0.01). In addition, the incidence of extrapulmonary complications, refractory MPP and severe MPP in the elevated group were significantly higher than those in the normal group ( P<0.01). As for the laboratory data, we found that neutrophils, C-reactive protein, lactate dehydrogenase, interleukin-6, interleukin-10 and interferon-γ were significantly higher in the elevated group than those in the normal group ( P<0.05). After treatments, all patients showed improvement and were discharged, but the proportions of patients requiring glucocorticoids, bronchoscopy, thoracentesis were significantly higher in the elevated group than those in the normal group ( P<0.05). Follow-up findings showed that the absorption rate of lung lesions 4 weeks after admission was significantly higher, the time needed for lung lesions absorption was significantly shorter, and the incidence of pulmonary sequelae was significantly lower in the normal group than those in the elevated group (all P<0.05). Correlation analysis showed that D-dimer level was positively correlated with the severity of pneumonia ( r=0.272, P=0.000) and the incidence of pulmonary sequelae ( r=0.235, P=0.000). CONCLUSION: Pediatric patients of MPP who had elevated plasma D-dimer had clinical manifestations that were more severe, required longer duration of treatment and longer recovery time for lung lesions, and were more likely to have pulmonary sequelae.

A Superconducting Binary Encoder with Multigate Nanowire Cryotrons.

Many classic and quantum devices need to operate at cryogenic temperatures, demanding advanced cryogenic digital electronics for processing the input and output signals on a chip to extend their scalability and performance. Here, we report a superconducting binary encoder with ultralow power dissipation and ultracompact size. We introduce a multigate superconducting nanowire cryotron (nTron) that functions as an 8-input OR gate within a footprint of approximately 0.5 µm2. Four cryotrons compose a 4-bit encoder that has a bias margin of 18.9%, an operation speed greater than 250 MHz, an average switching jitter of 75 ps, and a power dissipation of less than 1 µW. We apply this encoder to read out a superconducting-nanowire single-photon detector array whose pixel location is digitized into a 4-bit binary address. The small size of the nanowire combined with the low power dissipation makes nTrons promising for future monolithic integration.

Planar double-slot antenna integrated into a Nb5N6 microbolometer THz detector.

In this Letter, we propose and demonstrate a new type of planar double-slot antenna for a Nb5N6 microbolometer terahertz (THz) detector. The calculated results show that the planar antenna possessed high coupling efficiency, and the THz signals were obviously focused on the antenna center place. The new planar antenna was integrated with Nb5N6 microbolometer THz detectors using micro-fabrication technology. The measured results showed that the maximum optical voltage responsivity (Ro) of the detectors reached up to 113 V/W at 0.643 THz, and the corresponding noise equivalent power was 44pW/√Hz. In addition, the performance of double-slot antennas applied into array detectors in a tunable Fabry-Perot cavity was investigated. The measured results of the Nb5N6 THz detector remained almost unchanged when the distance between the chip substrate and the copper plate was altered. This indicated that this planar double-slot antenna, which possessed the advantages of high coupling efficiency and easy integration, has great application prospects in a THz detector.

Solvothermal Synthesis of Lateral Heterojunction Sb2Te3/Bi2Te3 Nanoplates.

A lateral heterojunction of topological insulator Sb2Te3/Bi2Te3 was successfully synthesized using a two-step solvothermal method. The two crystalline components were separated well by a sharp lattice-matched interface when the optimized procedure was used. Inspecting the heterojunction using high-resolution transmission electron microscopy showed that epitaxial growth occurred along the horizontal plane. The semiconducting temperature-resistance curve and crossjunction rectification were observed, which reveal a staggered-gap lateral heterojunction with a small junction voltage. Quantum correction from the weak antilocalization reveals the well-maintained transport of the topological surface state. This is appealing for a platform for spin filters and one-dimensional topological interface states.

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric.

In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs). We found that the NH3 flow during the deposition of SiNx can significantly affect the performances of metal-insulator-semiconductor (MIS) HEMTs. Compared to that without using NH3 flow, the device with the optimized NH3 flow exhibited three orders of magnitude lower gate leakage current, two orders of magnitude higher ON/OF drain current ratio, and an increased breakdown field by 69%. In addition, an in situ N2 plasma surface treatment prepared prior to SiNx deposition can further improve DC performances of MIS-HEMTs to a very low gate leakage current of 10-9 mA/mm and a high ON/OFF drain current ratio up to 109 by reducing the interface state density. These results demonstrate the great potential for using PECVD-SiNx as a gate dielectric in GaN-based MIS-HEMTs.

Effect of levetiracetam in combination with topiramate on immune function, cognitive function, and neuronal nutritional status of children with intractable epilepsy.

OBJECTIVE: To determine the effects of levetiracetam in combination with topiramate on immune function, cognitive function, and the neuronal nutritional status of children with intractable epilepsy. METHODS: This study enrolled 124 children with intractable epilepsy who were admitted to our hospital. The control group included 58 children treated with topiramate, and the observation group included 66 children treated with levetiracetam and topiramate. Flow cytometry was used to determine CD4+ and CD8+ T cell counts before and after treatment in both groups. RESULTS: After treatment, the observation group exhibited significantly higher CD4+ T cell counts and BDNF and NGF levels and significantly lower CD8+ T cell counts and IL-6, IL-1ß, and MMP-9 levels than the control group. The FIQ and VIQ of the observation group were also significantly higher than those of the control group. Additionally, the incidence rates of adverse events were not significantly different between the observation and the control groups. Finally, IL-6, IL-1ß, and MMP-9 were negatively correlated with full-scale intelligence quotient (FIQ) and virtual inhibitory quotient (VIQ). CONCLUSIONS: Levetiracetam in combination with topiramate is associated with reduced inflammatory response and improved immune function, cognitive function, and neuronal nutritional status in children with intractable epilepsy.

The drug resistance of multidrug-resistant bacterial organisms in pediatric pneumonia patients.

OBJECTIVE: This study aimed to investigate the distribution of multidrug-resistant organisms in pediatric patients with infectious pneumonia and to analyze their resistance and risk factors. METHODS: Pediatric patients infected with five MDROs (MRSA, MDR-PA, MDRAB, ESBL KP, and ESBL E. coli) and five sensitive bacteria (MSSA, PA, AB, KP, and E. coli) were recruited as the study cohort. The distribution of the MDROs and the risk factors for MDRO-infected pneumonia were investigated. The two groups' treatment costs, hospitalization times, and prognoses were compared. RESULTS: A total of 219 children were included, including 3 cases of mixed infections with MDRO and sensitive bacteria (1.37%), 110 cases of MDRO infections (50.23%), and 106 cases of sensitive bacterial infections (48.40%). Imipramine was sensitive to MDR-PA, MDRAB, ESBL KP, and ESBL E. coli, and vancomycin was sensitive to MRSA. A logistic regression model and a multifactorial analysis showed that ICU treatment, mechanical ventilation, arterial and venous intubation, fiberoptic bronchoscopy, concomitant chronic lung disease, and chronic cardiovascular disease were the independent risk factors for MDRO (P < 0.05). The hospitalization times, the treatment costs, and the 30-day mortality rate of the children in the MDRO group were significantly higher than they were in the children infected with sensitive bacteria (P < 0.05). CONCLUSION: Vancomycin or imipenem may result in good clinical outcomes in children treated in the ICU subject to mechanical ventilation, arterial and venous intubation, fiberoptic bronchoscopy, the overuse of antimicrobial drugs, and children with concomitant chronic lung disease or chronic cardiovascular disease.

Optimization of annealing conditions for Ag/p-GaN ohmic contacts.

The electrical and optical properties of Ag/p-GaN contacts have been investigated as a function of the annealing temperature, oxygen concentration, and annealing time. Specific contact resistance (ρ c) values as low as 1.2 × 10-4 Ω·cm2 were obtained from the Ag/p-GaN contact annealed at 400 °C for 60 s in ambient O2/N2 (1:10). We found that the participation of oxygen improves the formation of ohmic contacts. Oxygen might remove the H in Mg-H complexes to activate the Mg acceptors and enhance Ga out-diffusion to form an Ag-Ga solid solution. We also found that the reflectivity of the Ag layer decreases with increasing annealing temperature in the O2-containing ambient environment. Thus, an optimal annealing condition of Ag/p-GaN for blue and green LEDs is suggested based on these results. We also used the suggested annealing conditions to form ohmic contacts on DUV LEDs and achieved good electrical performance. The forward voltages of UVC LEDs fabricated with annealed Ag contacts were 6.60 V (7.66 V) at a 40 mA (100 mA) injection current.

Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.

Two-dimensional materials are promising candidates for future electronics due to unmatched device performance at atomic limit and low-temperature heterogeneous integration. To adopt these emerging materials in computing and optoelectronic systems, back end of line (BEOL) integration with mainstream technologies is needed. Here, we show the integration of large-area MoS2 thin-film transistors (TFTs) with nitride micro light-emitting diodes (LEDs) through a BEOL process and demonstrate high-resolution displays. The MoS2 transistors exhibit median mobility of 54 cm2 V-1s -1, 210 µA µm-1 drive current and excellent uniformity. The TFTs can drive micrometre-sized LEDs to 7.1 × 107 cd m-2 luminance under low voltage. Comprehensive analysis on driving capability, response time, power consumption and modulation scheme indicates that MoS2 TFTs are suitable for a range of display applications up to the high resolution and brightness limit. We further demonstrate prototypical 32 × 32 active-matrix displays at 1,270 pixels-per-inch resolution. Moreover, our process is fully monolithic, low-temperature, scalable and compatible with microelectronic processing.

Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire.

Two-dimensional (2D) semiconductors, in particular transition metal dichalcogenides (TMDCs), have attracted great interest in extending Moore's law beyond silicon1-3. However, despite extensive efforts4-25, the growth of wafer-scale TMDC single crystals on scalable and industry-compatible substrates has not been well demonstrated. Here we demonstrate the epitaxial growth of 2 inch (~50 mm) monolayer molybdenum disulfide (MoS2) single crystals on a C-plane sapphire. We designed the miscut orientation towards the A axis (C/A) of sapphire, which is perpendicular to the standard substrates. Although the change of miscut orientation does not affect the epitaxial relationship, the resulting step edges break the degeneracy of nucleation energy for the antiparallel MoS2 domains and lead to more than a 99% unidirectional alignment. A set of microscopies, spectroscopies and electrical measurements consistently showed that the MoS2 is single crystalline and has an excellent wafer-scale uniformity. We fabricated field-effect transistors and obtained a mobility of 102.6 cm2 V-1 s-1 and a saturation current of 450 µA µm-1, which are among the highest for monolayer MoS2. A statistical analysis of 160 field-effect transistors over a centimetre scale showed a >94% device yield and a 15% variation in mobility. We further demonstrated the single-crystalline MoSe2 on C/A sapphire. Our method offers a general and scalable route to produce TMDC single crystals towards future electronics.

Sub-thermionic, ultra-high-gain organic transistors and circuits.

The development of organic thin-film transistors (OTFTs) with low power consumption and high gain will advance many flexible electronics. Here, by combining solution-processed monolayer organic crystal, ferroelectric HfZrOx gating and van der Waals fabrication, we realize flexible OTFTs that simultaneously deliver high transconductance and sub-60 mV/dec switching, under one-volt operating voltage. The overall optimization of transconductance, subthreshold swing and output resistance leads to transistor intrinsic gain and amplifier voltage gain over 5.3 × 104 and 1.1 × 104, respectively, which outperform existing technologies using organics, oxides and low-dimensional nanomaterials. We further demonstrate battery-powered, integrated wearable electrocardiogram (ECG) and pulse sensors that can amplify human physiological signal by 900 times with high fidelity. The sensors are capable of detecting weak ECG waves (undetectable even by clinical equipment) and diagnosing arrhythmia and atrial fibrillation. Our sub-thermionic OTFT is promising for battery/wireless powered yet performance demanding applications such as electronic skins and radio-frequency identification tags, among many others.

Fabrication of superconducting niobium nitride nanowire with high aspect ratio for X-ray photon detection.

The niobium nitride (NbN) nanowires fabricated with the high-quality ultra-thin NbN film with a thickness of 3 nm-6 nm were widely used for single photon detectors. These nanowires had a low aspect ratio, less than 1:20. However, increasing the thickness and the aspect ratio of highly-uniformed NbN nanowires without reducing the superconductivity is crucial for the device in detecting high-energy photons. In this paper, a high-quality superconducting nanowire with aspect ratio of 1:1 was fabricated with optimized process, which produced a superconducting critical current of 550 µA and a hysteresis of 36 µA at 2.2 K. With the optimization of the electron beam lithography process of AR-P6200.13 and the adjustion of the chamber pressure, the discharge power, as well as the auxiliary gas in the process of reactive ion etching (RIE), the meandered NbN nanowire structure with the minimum width of 80 nm, the duty cycle of 1:1 and the depth of 100 nm were finally obtained on the silicon nitride substrate. Simultaneously, the sidewall of nanowire was vertical and smooth, and the corresponding depth-width ratio was more than 1:1. The fabricated NbN nanowire will be applied to the detection of soft X-ray photon emitted from pulsars with a sub-10 ps time resolution.

A Gd@C82 single-molecule electret.

Electrets are dielectric materials that have a quasi-permanent dipole polarization. A single-molecule electret is a long-sought-after nanoscale component because it can lead to miniaturized non-volatile memory storage devices. The signature of a single-molecule electret is the switching between two electric dipole states by an external electric field. The existence of these electrets has remained controversial because of the poor electric dipole stability in single molecules. Here we report the observation of a gate-controlled switching between two electronic states in Gd@C82. The encapsulated Gd atom forms a charged centre that sets up two single-electron transport channels. A gate voltage of ±11 V (corresponding to a coercive field of ~50 mV Å-1) switches the system between the two transport channels with a ferroelectricity-like hysteresis loop. Using density functional theory, we assign the two states to two different permanent electrical dipole orientations generated from the Gd atom being trapped at two different sites inside the C82 cage. The two dipole states are separated by a transition energy barrier of 11 meV. The conductance switching is then attributed to the electric-field-driven reorientation of the individual dipole, as the coercive field provides the necessary energy to overcome the transition barrier.

Highly efficient broadband photodetectors based on lithography-free Au/Bi2O2Se/Au heterostructures.

As one of the bismuth-based oxychalcogenide materials, Bi2O2Se ultrathin films have received intense research interest due to their high carrier mobility, narrow bandgaps, ultrafast intrinsic photoresponse and long-term ambient stability; they exhibit great potential in electronic and optoelectronic applications. However, the device performance of photodetectors based on metal/Bi2O2Se/metal structures has degraded due to the undesirable defects or contaminants from the electrode deposition or the sample transfer processes. In this work, highly efficient photodetectors based on Au/Bi2O2Se junctions were achieved with Au electrodes transferred under the assistance of a probe tip to avoid contaminants from traditional lighography methods. Furthermore, to improve the charge transfer efficiency, specifically by increasing the intensity of the electrical field at the Au/Bi2O2Se interface and along the Bi2O2Se channels, the device annealing temperature was optimized to narrow the van der Waals gap at the Au/Bi2O2Se interface and the device channel length was shortened to improve the overall device performance. Among all the devices, the maximum device photoresponsivity was 9.1 A W-1, and the device response time could approach 36 µs; moreover, the photodetectors featured broadband spectral responses from 360 nm to 1090 nm.

pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories.

Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted considerable attention because of their promising potential for memory applications, while a critical issue is the large energy consumption mainly caused by a high operating voltage and slow data switching. Here, we employ ultrathin ferroelectric polymer and semiconducting molecular crystals to create low-voltage Fe-OFET memories. Devices require only pJ-level energy consumption. The writing and erasing processes require ∼1.2 and 1.6 pJ/bit, respectively, and the reading energy is ∼1.9 pJ/bit (on state) and ∼0.2 fJ/bit (off state). Thus, our memories consume only <0.1% of the energy required for devices using bulk functional layers. Besides, our devices also exhibit low contact resistance and steep subthreshold swing. Therefore, we provide a strategy that opens up a path for Fe-OFETs toward emerging applications, such as wearable electronics.

Reflective grating-coupled structure improves the detection efficiency of THz array detectors.

A reflective grating-coupled structure on the silicon substrate was designed to improve the detection efficiency of terahertz detectors for the frequency ranging from 0.26 THz to 0.36 THz. By using finite difference time domain (FDTD) solutions, the simulation and optimized design of the grating-coupled structure were carried out. The results showed that the signal was effectively reflected and diffracted by the reflective grating-coupled structure which significantly enhanced the electric field in the place of the detector. The maximum electric field can be increased by 2.8 times than that of the Fabry-Perot resonator. To verify the design results, the reflective grating-coupled structure was applied in the preparation of the Nb5N6 array detector chip and compared with the Nb5N6 array detector chip with the F-P resonator. The results showed that the maximum voltage responsivity of the Nb5N6 detector with the reflective grating-coupled structure was 2 times larger than the Nb5N6 detector with the F-P resonator. It indicates that the reflective grating-coupled structure can efficiently improve the detection efficiency of THz detectors.