RESUMEN
The quasibinary section of the intermetallic phases MAl4 and MGa4 with M=Sr and Ba have been characterised by means of X-ray diffraction (XRD) studies and differential thermal analysis. The binary phases show complete miscibility and form solid solutions M(Al1-x Gax )4 with M=Sr and Ba. These structures crystallise in the BaAl4 structure type with four- and five-bonded Al and/or Ga atoms (denoted as Al(4b), Al(5b), Ga(4b), and Ga(5b), respectively) that form a polyanionic Al/Ga sublattice. Solid state 27 Alâ NMR spectroscopic analysis and quantum mechanical (QM) calculations were applied to study the bonding of the Al centres and the influence of Al/Ga substitution, especially in the regimes with low degrees of substitution. M(Al1-x Gax )4 with M=Sr and Ba and 0.925≤x≤0.975 can be described as a matrix of the binary majority compound in which a low amount of the Ga atoms has been substituted by Al atoms. In good agreement with the QM calculations, 27 Alâ NMR investigations and single crystal XRD studies prove a preferred occupancy of Al(4b) for these substitution regimes. Furthermore, two different local Al environments were found, namely isolated Al(4b1) atoms and Al(4b2), due to the formation of Al(4b)-Al(4b) pairs besides isolated Al(4b) atoms within the polyanionic sublattice. QM calculations of the electric field gradient (EFG) using superlattice structures under periodic boundary conditions are in good agreement with the NMR spectroscopic results.
RESUMEN
Passive mode locking of the Yb:Sc2O3 laser is demonstrated. We investigate the laser performance with Ti:sapphire and diode-laser pumping. The laser is mode locked by use of a semiconductor saturable-absorber mirror and emits as much as 0.8 W of power in the picosecond range with a pump efficiency as high as 47%. With dispersion compensation, pulses as short as 230 fs for an average power of 0.54 W are obtained at 1044 nm. This is, to our knowledge, the first femtosecond oscillator based on an Yb-doped sesquioxide crystal.