RESUMEN
Bragg reflectors (BRFs) are essential elements in optical telecommunication and sensing applications. Their miniaturization down to the sub-micron scale has been achieved in silicon-on-insulator chips. However, their tunability is limited only to thermal tuning. In order to achieve a faster and more practical tunability operation, here we report on electro-optically tunable BRFs with â¼14 dB signal filtering on a lithium-niobate-on-insulator platform, while keeping sub-micron cross-sections. Due to the lithium niobate electro-optic properties and the chosen electrodes configuration, a Bragg tunability coefficient of 23.37±0.55 pm/V is achieved, which enhances â¼33 times the tunability performance of state-of-the-art BRFs.
RESUMEN
The ability of nanowaveguides to confine and guide light has been applied for developing optical applications such as nanolasers, optical switching and localized imaging. These and others applications can be further complemented by the optical control of the guided modes within the nanowaveguide, which in turn dictates the light emission pattern. It has been shown that the light directionality can be shaped by varying the nanowire cross-sections. Here, we demonstrate that the directionality of the light can be modified using a single nanowaveguide with a nonlinear phenomenon such as second-harmonic generation. In individual lithium niobate nanowaveguides, we use second-harmonic modal phase-matching and we apply it to switch the guided modes within its sub-micron cross-section. In doing so, we can vary the light directionality of the generated light from straight (0° with respect to the propagation direction) to large spread angles (almost 54°). Further, we characterize the directionality of the guided light by means of optical Fourier transformation and show that the directionality of the guided light changes for different wavelengths.
RESUMEN
In this work, we report an optical method for characterizing crystal phases along single-semiconductor III-V nanowires based on the measurement of polarization-dependent second-harmonic generation. This powerful imaging method is based on a per-pixel analysis of the second-harmonic-generated signal on the incoming excitation polarization. The dependence of the second-harmonic generation responses on the nonlinear second-order susceptibility tensor allows the distinguishing of areas of pure wurtzite, zinc blende, and mixed and rotational twins crystal structures in individual nanowires. With a far-field nonlinear optical microscope, we recorded the second-harmonic generation in GaAs nanowires and precisely determined their various crystal structures by analyzing the polar response for each pixel of the images. The predicted crystal phases in GaAs nanowire are confirmed with scanning transmission electron and high-resolution transmission electron measurements. The developed method of analyzing the nonlinear polar response of each pixel can be used for an investigation of nanowire crystal structure that is quick, sensitive to structural transitions, nondestructive, and on-the-spot. It can be applied for the crystal phase characterization of nanowires built into optoelectronic devices in which electron microscopy cannot be performed (for example, in lab-on-a-chip devices). Moreover, this method is not limited to GaAs nanowires but can be used for other nonlinear optical nanostructures.
RESUMEN
Nonlinear optical nanoscale waveguides are a compact and powerful platform for efficient wavelength conversion. The free-standing waveguide geometry opens a range of applications in microscopy for local delivery of light, where in situ wavelength conversion helps to overcome various wavelength-dependent issues, such as biological tissue damage. In this paper, we present an original patterning method for high-precision fabrication of free-standing nanoscale waveguides based on lithium niobate, a material with a strong second-order nonlinearity and a broad transparency window covering the visible and mid-infrared wavelength ranges. The fabrication process combines electron-beam lithography with ion-beam enhanced etching and produces nanowaveguides with lengths from 5 to 50 µm, widths from 50 to 1000 nm and heights from 50 to 500 nm, each with a precision of few nanometers. The fabricated nanowaveguides are tested in an optical characterization experiment showing efficient second-harmonic generation.
RESUMEN
Nanoscale waveguides are basic building blocks of integrated optical devices. Especially, waveguides made from nonlinear optical materials, such as lithium niobate, allow access to a broad range of applications using second-order nonlinear frequency conversion processes. Based on a lithium niobate on insulator substrate, millimeter-long nanoscale waveguides were fabricated with widths as small as 200 nm. The fabrication was done by means of potassium hydroxide-assisted ion-beam-enhanced etching. The waveguides were optically characterized in the near infrared wavelength range showing phase-matched second-harmonic generation.
RESUMEN
We study the nonlinear optical properties of lithium niobate (LiNbO(3)) nanowires (NWs) fabricated by a top-down ion beam enhanced etching method. First, we demonstrate generation and propagation of the second-harmonic (SH) light in LiNbO(3) NWs of typical rectangular cross-sections of 400 x 600 nm(2) and length from 10 to 50 µm. Then, we show local fluorescent excitation of 4',6-diamidino-2-phenylindole (DAPI) dye with the propagated SH signal in standard concentrations as for biological applications. By measuring the detected average power of the propagated fundamental harmonic (FH) and the SH signal at the output of the NWs, we directly prove the dominating role of the SH signal over possible two-photon excitation processes with the FH in the DAPI dye. We estimate that 63 ± 6 pW of the propagated SH average power is required for detectable dye excitation. Finally, we model the waveguiding of the SH light to determine the smallest NW cross-section (around 40x60 nm(2)) which is potentially able to excite fluorescence with a FH intensity below the cell damage threshold.
RESUMEN
The optical and electrical characterization of nanostructures is crucial for all applications in nanophotonics. Particularly important is the knowledge of the optical near-field distribution for the design of future photonic devices. A common method to determine optical near-fields is scanning near-field optical microscopy (SNOM) which is slow and might distort the near-field. Here, we present a technique that permits sensing indirectly the infrared near-field in GaAs nanowires via its second-harmonic generated (SHG) signal utilizing a nonscanning far-field microscope. Using an incident light of 820 nm and the very short mean free path (16 nm) of the SHG signal in GaAs, we demonstrate a fast surface sensitive imaging technique without using a SNOM. We observe periodic intensity patterns in untapered and tapered GaAs nanowires that are attributed to the fundamental mode of a guided wave modulating the Mie-scattered incident light. The periodicity of the interferences permits to accurately determine the nanowires' radii by just using optical microscopy, i.e., without requiring electron microscopy.