Influenza virus immunosensor with an electro-active optical waveguide under potential modulation.

Here we report the development of a novel immunosensor-based strategy for label-free detection of viral pathogens by incorporating a sandwich bioassay onto a single-mode, electro-active, integrated optical waveguide (EA-IOW). Our strategy begins with the functionalization of the electro-active waveguide surface with a capture antibody aimed at a specific virus antigen. Once the target antigen is bound to the photonic interface, it promotes the binding of a secondary antibody that has been labeled with a methylene blue (MB) dye. The MB is a redox-active probe whose optical absorption can be electrically modulated and interrogated with high sensitivity by a propagating waveguide mode. In this effort, we have targeted the hemagglutinin (HA) protein from the H5N1 avian influenza A virus to demonstrate the capabilities of the EA-IOW device for detection and quantification of an important antigen. Our initial results for the HA H5N1 influenza virus show a remarkable limit of detection in the pico-molar range.

Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS).

Reflectance anisotropy spectroscopy (RAS), which was originally invented to monitor epitaxial growth, can-as we have previously shown-also be used to monitor the reactive ion etching of III/V semiconductor samples in situ and in real time, as long as the etching rate is not too high and the abrasion at the etch front is not totally chaotic. Moreover, we have proven that-using RAS equipment and optical Fabry‒Perot oscillations due to the ever-shrinking thickness of the uppermost etched layer-the in situ etch-depth resolution can be as good as ±0.8 nm, employing a Vernier-scale type measurement and evaluation procedure. Nominally, this amounts to ±1.3 lattice constants in our exemplary material system, AlGaAsSb, on a GaAs or GaSb substrate. In this contribution, we show that resolutions of about ±5.6 nm can be reliably achieved without a Vernier scale protocol by employing thin doped layers or sharp interfaces between differently doped layers or quantum-dot (QD) layers as etch-stop indicators. These indicator layers can either be added to the device layer design on purpose or be part of it incidentally due to the functionality of the device. For typical etch rates in the range of 0.7 to 1.3 nm/s (that is, about 40 to 80 nm/min), the RAS spectrum will show a distinct change even for very thin indicator layers, which allows for the precise termination of the etch run.