RESUMEN
Silicon nanowires have been patterned with mean widths down to 4 nm using top-down lithography and dry etching. Performance-limiting scattering processes have been measured directly which provide new insight into the electronic conduction mechanisms within the nanowires. Results demonstrate a transition from 3-dimensional (3D) to 2D and then 1D as the nanowire mean widths are reduced from 12 to 4 nm. The importance of high quality surface passivation is demonstrated by a lack of significant donor deactivation, resulting in neutral impurity scattering ultimately limiting the electronic performance. The results indicate the important parameters requiring optimization when fabricating nanowires with atomic dimensions.
RESUMEN
Multiple-filter stopbands, with the potential to be nonuniformly spaced in frequency, are realized in a single integrated Bragg grating device on silicon. By utilizing a superposition of sidewall relief grating functions, N individual filter responses can be fabricated with a device length N× shorter than the equivalent serial set of gratings. Arbitrary combinations of eight-basis filter responses were demonstrated as selected by an eight-bit pseudorandom number generator, showing the flexibility of the complex Bragg grating device design.
RESUMEN
We present a new class of interferometer system that is capable of simultaneous measurement of absolute position and rotation in all six degrees of freedom (DOF) with nanometer precision. This novel capability is due to the employment of a system of interference fringes that is not periodic. One of the key strengths offered by this new approach is that the absolute position of the system can be determined with a single measurement, rather than by counting fringes during displacement from a known location. The availability of a simultaneous measurement of all six DOF eliminates many problems associated with conventional interferometry.