RESUMEN
The structural and magnetic properties of a drop-cast film of flat C54H34Br4CuO4, a ß-diketonato complex functionalized with bromine atoms, on a graphite surface are investigated using scanning tunneling microscopy, synchrotron X-ray absorption spectroscopy, and X-ray magnetic circular dichroism. Experimental measurements reveal that the Cu-complexes preferentially lay flat on the graphite surface. The magnetic hysteresis loops show that the organic thin film remains paramagnetic at 2 K with an easy axis of magnetization perpendicular to the graphite surface and is therefore perpendicular to the plane of the Cu-complex skeleton.
RESUMEN
Nearly localized moiré flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals WSe2/MoSe2heterobilayer grown by molecular beam epitaxy. This flat band is localized near the Fermi level and has a width of several hundred meVs. By combining ARPES measurements with density functional theory calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band atKis determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Γ point. The energy difference between the VBM at Γ and theKpoint is of -60 meV, which is a stark difference compared to individual single monolayer WSe2and monolayer WSe2, showing both a VBM atK.
RESUMEN
The magnetic properties of some single molecule magnets (SMM) on surfaces can be strongly modified by the molecular packing in nanometric films/aggregates or by interactions with the substrate, which affect the molecular orientation and geometry. Detailed investigations of the magnetism of thin SMM films and nanostructures are necessary for the development of spin-based molecular devices, however this task is challenged by the limited sensitivity of laboratory-based magnetometric techniques and often requires access to synchrotron light sources to perform surface sensitive X-ray magnetic circular dichroism (XMCD) investigations. Here we show that low-temperature magnetic force microscopy is an alternative powerful laboratory tool able to extract the field dependence of the magnetization and to identify areas of in-plane and perpendicular magnetic anisotropy in microarrays of the SMM terbium(III) bis-phthalocyaninato (TbPc2) neutral complex grown as nanosized films on SiO2 and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA), and this is in agreement with data extracted from nonlocal XMCD measurements performed on homogeneous TbPc2/PTCDA films.
RESUMEN
We perform on-surface synthesis of single-ion molecular magnets on an Ag(111) surface and characterize their morphology, chemistry, and magnetism. The first molecule we synthesize is TbPc2 to enable comparison with chemically synthesized and subsequently surface adsorbed species. We demonstrate the formation of TbPc2 with a yield close to 100% and show that on-surface synthesis leads to identical magnetic and morphological properties compared to the previously studied chemically synthesized species. Moreover, exposure of the surface adsorbed TbPc2 molecules to air does not modify their magnetic and morphological properties. To demonstrate the versatility of our approach, we synthesize novel Tb double deckers using tert-butyl-substituted phthalocyanine (tbu-2H-Pc). The Tb(tbu-Pc)2 molecules exhibit magnetic hysteresis and therefore are the first purely on-surface synthesized single ion magnet.
RESUMEN
The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.
RESUMEN
Nitrogen doping of graphene is of great interest for both fundamental research to explore the effect of dopants on a 2D electrical conductor and applications such as lithium storage, composites, and nanoelectronic devices. Here, we report on the modifications of the electronic properties of epitaxial graphene thanks to the introduction, during the growth, of nitrogen-atom substitution in the carbon honeycomb lattice. High-resolution transmission microscopy and low-energy electron microscopy investigations indicate that the nitrogen-doped graphene is uniform at large scale. The substitution of nitrogen atoms in the graphene planes was confirmed by high-resolution X-ray photoelectron spectroscopy, which reveals several atomic configurations for the nitrogen atoms: graphitic-like, pyridine-like, and pyrrolic-like. Angle-resolved photoemission measurements show that the N-doped graphene exhibits large n-type carrier concentrations of 2.6 × 10(13) cm(-2), about 4 times more than what is found for pristine graphene, grown under similar pressure conditions. Our experiments demonstrate that a small amount of dopants (<1%) can significantly tune the electronic properties of graphene by shifting the Dirac cone about 0.3 eV toward higher binding energies with respect to the π band of pristine graphene, which is a key feature for envisioning applications in nanoelectronics.