Superstrengthening Bi_{2}Te_{3} through Nanotwinning.

Bismuth telluride (Bi_{2}Te_{3}) based thermoelectric (TE) materials have been commercialized successfully as solid-state power generators, but their low mechanical strength suggests that these materials may not be reliable for long-term use in TE devices. Here we use density functional theory to show that the ideal shear strength of Bi_{2}Te_{3} can be significantly enhanced up to 215% by imposing nanoscale twins. We reveal that the origin of the low strength in single crystalline Bi_{2}Te_{3} is the weak van der Waals interaction between the Te1 coupling two Te1─Bi─Te2─Bi─Te1 five-layer quint substructures. However, we demonstrate here a surprising result that forming twin boundaries between the Te1 atoms of adjacent quints greatly strengthens the interaction between them, leading to a tripling of the ideal shear strength in nanotwinned Bi_{2}Te_{3} (0.6 GPa) compared to that in the single crystalline material (0.19 GPa). This grain boundary engineering strategy opens a new pathway for designing robust Bi_{2}Te_{3} TE semiconductors for high-performance TE devices.

A computational assessment of the electronic, thermoelectric, and defect properties of bournonite (CuPbSbS3) and related substitutions.

Bournonite (CuPbSbS3) is an earth-abundant mineral with potential thermoelectric applications. This material has a complex crystal structure (space group Pmn21 #31) and has previously been measured to exhibit a very low thermal conductivity (κ < 1 W m-1 K-1 at T ≥ 300 K). In this study, we employ high-throughput density functional theory calculations to investigate how the properties of the bournonite crystal structure change with elemental substitutions. Specifically, we compute the stability and electronic properties of 320 structures generated via substitutions {Na-K-Cu-Ag}{Si-Ge-Sn-Pb}{N-P-As-Sb-Bi}{O-S-Se-Te} in the ABCD3 formula. We perform two types of transport calculations: the BoltzTraP model, which has been extensively tested, and a newer AMSET model that we have developed and which incorporates scattering effects. We discuss the differences in the model results, finding qualitative agreement except in the case of degenerate bands. Based on our calculations, we identify p-type CuPbSbSe3, CuSnSbSe3 and CuPbAsSe3 as potentially promising materials for further investigation. We additionally calculate the defect properties, finding that n-type behavior in bournonite and the selected materials is highly unlikely, and p-type behavior might be enhanced by employing Sb-poor synthesis conditions to prevent the formation of SbPb defects. Finally, we discuss the origins of various trends with chemical substitution, including the possible role of stereochemically active lone pair effects in stabilizing the bournonite structure and the effect of cation and anion selection on the calculated band gap.

Ayahuasca: A review of historical, pharmacological, and therapeutic aspects.

Ayahuasca is a psychedelic plant brew originating from the Amazon rainforest. It is formed from two basic components, the Banisteriopsis caapi vine and a plant containing the potent psychedelic dimethyltryptamine (DMT), usually Psychotria viridis. Here we review the history of ayahuasca and describe recent work on its pharmacology, phenomenological responses, and clinical applications. There has been a significant increase in interest in ayahuasca since the turn of the millennium. Anecdotal evidence varies significantly, ranging from evangelical accounts to horror stories involving physical and psychological harm. The effects of the brew on personality and mental health outcomes are discussed in this review. Furthermore, phenomenological analyses of the ayahuasca experience are explored. Ayahuasca is a promising psychedelic agent that warrants greater empirical attention regarding its basic neurochemical mechanisms of action and potential therapeutic application.

When band convergence is not beneficial for thermoelectrics.

Band convergence is considered a clear benefit to thermoelectric performance because it increases the charge carrier concentration for a given Fermi level, which typically enhances charge conductivity while preserving the Seebeck coefficient. However, this advantage hinges on the assumption that interband scattering of carriers is weak or insignificant. With first-principles treatment of electron-phonon scattering in the CaMg2Sb2-CaZn2Sb2 Zintl system and full Heusler Sr2SbAu, we demonstrate that the benefit of band convergence can be intrinsically negated by interband scattering depending on the manner in which bands converge. In the Zintl alloy, band convergence does not improve weighted mobility or the density-of-states effective mass. We trace the underlying reason to the fact that the bands converge at a one k-point, which induces strong interband scattering of both the deformation-potential and the polar-optical kinds. The case contrasts with band convergence at distant k-points (as in the full Heusler), which better preserves the single-band scattering behavior thereby successfully leading to improved performance. Therefore, we suggest that band convergence as thermoelectric design principle is best suited to cases in which it occurs at distant k-points.

Metallic n-Type Mg3 Sb2 Single Crystals Demonstrate the Absence of Ionized Impurity Scattering and Enhanced Thermoelectric Performance.

Mg3 (Sb,Bi)2 alloys have recently been discovered as a competitive alternative to the state-of-the-art n-type Bi2 (Te,Se)3 thermoelectric alloys. Previous theoretical studies predict that single crystals Mg3 (Sb,Bi)2 can exhibit higher thermoelectric performance near room temperature by eliminating grain boundary resistance. However, the intrinsic Mg defect chemistry makes it challenging to grow n-type Mg3 (Sb,Bi)2 single crystals. Here, the first thermoelectric properties of n-type Te-doped Mg3 Sb2 single crystals, synthesized by a combination of Sb-flux method and Mg-vapor annealing, is reported. The electrical conductivity and carrier mobility of single crystals exhibit a metallic behavior with a typical T-1.5 dependence, indicating that phonon scattering dominates the charge carrier transport. The absence of any evidence of ionized impurity scattering in Te-doped Mg3 Sb2 single crystals proves that the thermally activated mobility previously observed in polycrystalline materials is caused by grain boundary resistance. Eliminating this grain boundary resistance in the single crystals results in a large enhancement of the weighted mobility and figure of merit zT by more than 100% near room temperature. This work experimentally demonstrates the accurate understanding of charge-carrier scattering is crucial for developing high-performance thermoelectric materials and indicates that single-crystalline Mg3 (Sb,Bi)2 solid solutions can exhibit higher zT compared to polycrystalline samples.

Effect of anion substitution on the structural and transport properties of argyrodites Cu7PSe6-xSx.

Inspired by the good performance of argyrodites as ion conducting thermoelectrics and as solid electrolytes we investigated the effect of isovalent S2- substitution for Se2- in Cu7PSe6. At room temperature Cu7PSe6 crystallizes in the primitive cubic ß-polymorph of the argyrodite structure and transforms to the face-centered high-temperature (HT) γ-modification above 320 K. The transition for the homologous Cu7PS6 occurs at 510 K. Promising thermoelectric and ion conducting properties are observed only in the HT modification, where the cations are mobile. Using Rietveld refinements against X-ray diffraction data the effect of isovalent S2- substitution for Se2- on the structural and transport properties in Cu7PSe6-xSx was analyzed. While a step-wise incorporation of S2- showed typical behavior for a homogeneous solid solution series, the analysis of the diffraction data gave clear evidence of anion ordering due to site preference of the sulfide ions, which can be rationalized using Pearson's HSAB concept. This leads to a stabilization of the HT structure even at lower temperatures. This selective control enables new strategies for the design of argyrodite materials, as isovalent substitution not only allows an engineering of properties, but also permits the stabilization of the polymorph with the most promising properties.

Synthesis and characterization of vacancy-doped neodymium telluride for thermoelectric applications.

Thermoelectric materials exhibit a voltage under an applied thermal gradient and are the heart of radioisotope thermoelectric generators (RTGs), which are the main power system for space missions such as Voyager I, Voyager II, and the Mars Curiosity rover. However, materials currently in use enable only modest thermal-to-electrical conversion efficiencies near 6.5% at the system level, warranting the development of material systems with improved thermoelectric performance. Previous work has demonstrated large thermoelectric figures of merit for lanthanum telluride (La3-x Te4), a high-temperature n-type material, achieving a peak zT value of 1.1 at 1275 K at an optimum cation vacancy concentration. Here we present an investigation of the thermoelectric properties of neodymium telluride (Nd3-x Te4), another rare-earth telluride with a similar structure to La3-x Te4. Density functional theory (DFT) calculations predicted a significant increase in the Seebeck coefficient over La3-x Te4 at equivalent vacancy concentrations due to an increased density of states (DOS) near the Fermi level from the 4f electrons of Nd. The high temperature electrical resistivity, Seebeck coefficient, and thermal conductivity were measured for Nd3-x Te4 at various carrier concentrations. These measurements were compared to La3-x Te4 in order to elucidate the impact of the four 4f electrons of Nd on the transport properties of Nd3-x Te4. A zT of 1.2 was achieved at 1273 K for Nd2.78Te4, which is a 10% improvement over that of La2.74Te4.

Micro- and Macromechanical Properties of Thermoelectric Lead Chalcogenides.

Both n- and p-type lead telluride (PbTe)-based thermoelectric (TE) materials display high TE efficiency, but the low fracture strength may limit their commercial applications. To find ways to improve these macroscopic mechanical properties, we report here the ideal strength and deformation mechanism of PbTe using density functional theory calculations. This provides structure-property relationships at the atomic scale that can be applied to estimate macroscopic mechanical properties such as fracture toughness. Among all the shear and tensile paths that are examined here, we find that the lowest ideal strength of PbTe is 3.46 GPa along the (001)/⟨100⟩ slip system. This leads to an estimated fracture toughness of 0.28 MPa m1/2 based on its ideal stress-strain relation, which is in good agreement with our experimental measurement of 0.59 MPa m1/2. We find that softening and breaking of the ionic Pb-Te bond leads to the structural collapse. To improve the mechanical strength of PbTe, we suggest strengthening the structural stiffness of the ionic Pb-Te framework through an alloying strategy, such as alloying PbTe with isotypic PbSe or PbS. This point defect strategy has a great potential to develop high-performance PbTe-based materials with robust mechanical properties, which may also be applied to other materials and applications.

Structure and Failure Mechanism of the Thermoelectric CoSb3/TiCoSb Interface.

The brittle behavior and low strength of CoSb3/TiCoSb interface are serious issues concerning the engineering applications of CoSb3 based or CoSb3/TiCoSb segmented thermoelectric devices. To illustrate the failure mechanism of the CoSb3/TiCoSb interface, we apply density functional theory to investigate the interfacial behavior and examine the response during tensile deformations. We find that both CoSb3(100)/TiCoSb(111) and CoSb3(100)/TiCoSb(110) are energetically favorable interfacial structures. Failure of the CoSb3/TiCoSb interface occurs in CoSb3 since the structural stiffness of CoSb3 is much weaker than that of TiCoSb. This failure within CoSb3 can be explained through the softening of the Sb-Sb bond along with the cleavage of the Co-Sb bond in the interface. The failure mechanism of the CoSb3/TiCoSb interface is similar to that of bulk CoSb3, but the ideal tensile strength and failure strain of the CoSb3/TiCoSb interface are much lower than those of bulk CoSb3. This can be attributed to the weakened stiffness of the Co-Sb framework because of structural rearrangement near the interfacial region.