Angular-dependent magnetoresistance modulated by interfacial magnetic state in Pt/LSMO heterostructures.

The interfaces between heavy metals and antiferromagnetic materials have garnered significant attention due to their interesting physical properties. La0.35Sr0.65MnO3 (LSMO), as a typical manganite, exhibits an antiferromagnetic ground state that can be controlled through epitaxial strain and interfacial spin-orbit coupling. In this work, we reported the diverse magnetoresistance, influenced by the interfacial magnetic state, in Pt (3 nm)/LSMO (6-20 nm) heterostructures. The strong spin-orbit coupling of Pt and Dzyaloshinskii-Moriya interaction alter the spin structure and enhance the electron scattering at the Pt/LSMO interface, resulting in positive magnetoresistance. The interfacial angular-dependent magnetoresistance modulated by the interfacial magnetic states was also observed in the Pt/LSMO (20 nm) heterostructures. Our findings contribute to a broader understanding of interfacial properties between heavy metals and antiferromagnetic manganites.

Controllable Ferromagnetism in Super-tetragonal PbTiO3 through Strain Engineering.

The coupling strain in nanoscale systems can achieve control of the physical properties in functional materials, such as ferromagnets, ferroelectrics, and superconductors. Here, we directly demonstrate the atomic-scale structure of super-tetragonal PbTiO3 nanocomposite epitaxial thin films, including the extraordinary coupling of strain transition and the existence of the oxygen vacancies. Large strain gradients, both longitudinal and transverse (∼3 × 107 m-1), have been observed. The original non-magnetic ferroelectric composites notably evoke ferromagnetic properties, derived from the combination of Ti3+ and oxygen vacancies. The saturation ferromagnetic moment can be controlled by the strain of both the interphase and substrate, optimized to a high value of ∼55 emu/cc in 10-nm thick nanocomposite epitaxial thin films on the LaAlO3 substrate. Strain engineering provides a route to explore multiferroic systems in conventional non-magnetic ferroelectric oxides and to create functional data storage devices from both ferroelectrics and ferromagnetics.

Ferroelectric resistance switching in Pt/Fe/BiFeO3/SrRuO3/SrTiO3 heterostructures.

BiFeO3 (BFO)-based heterostructures have been widely studied to develop high-speed, high-density and low-consumption nonvolatile memory. In this study, the resistive switching (RS) behavior in metal/BFO/SrRuO3 (SRO) heterostructures was investigated. The I-V curves of Pt/Fe/BFO/SRO and Pt/BFO/SRO heterostructures demonstrate that the RS behavior in the Pt/Fe/BFO/SRO heterostructures results from the fact that ferroelectric polarization modulated the depletion layer width around the BFO/SRO interface. According to the fitting results of the I-V curves, the conductivity mechanisms are the interface-limited Fowler-Nordheim tunneling mechanism in the negative bias and the space-charge-limited conduction mechanism in the positive bias. Compared with the memory performance in the Pt/BFO/SRO heterostructures, the memory performance in the Pt/Fe/BFO/SRO heterostructures evidently improved. The Fe layer with a work function similar to that of the BFO layer can decrease the barrier height and reduce the accumulation of the injected charges at the top-electrode/BFO interface, which further improves the ferroelectric performance of the BFO layer.

Electric-field-mediated magnetic properties of all-oxide CoFe2O4/La0.67Sr0.33MnO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures.

Electric-field-mediated magnetic properties were investigated in CoFe2O4/La0.67Sr0.33MnO3/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (CFO/LSMO/PMN-PT) heterostructures. The butterfly-like behavior of the magnetization under different electric fields indicates that the strain effect plays a critical role in the electric-field-mediated magnetic properties, leading to an increase in magnetization along the [100] direction but a decrease along the [01-1] direction in the CFO/LSMO/PMN-PT heterostructures. More interestingly, due to the large magnetostriction of the CFO layer, the coercivity of the CFO/LSMO/PMN-PT heterostructures decreases ∼50% along the [01-1] direction under the electric fields. The large modulation of the coercivity makes it possible to achieve electric-field-controlled magnetoresistance in the metal/CFO/LSMO/PMN-PT spin filter magnetic tunneling junctions.

Ferroelectric field manipulated nonvolatile resistance switching in Al:ZnO/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures at room temperature.

Resistance switching was obtained in Al:ZnO/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures at room temperature by applying an external electric field. The modulation of the resistance is more pronounced in the thinner samples, indicating that it is an interfacial effect. In addition, the resistance of Al:ZnO films is significantly reduced by the photoexcited carriers when illumination is applied. The results indicate that the carrier density in the Al:ZnO films is modulated under external electric fields, due to the accumulation and depletion of charge at the interface between Al:ZnO and Pb(Mg1/3Nb2/3)0.7Ti0.3O3. Hence, reversible and nonvolatile resistance states can be achieved by the ferroelectric field effect, and it is expected that multilevel storage will be realized.

Charge-assisted non-volatile magnetoelectric effects in NiFe2O4/PMN-PT heterostructures.

Electric field tuning of magnetization is a viable path to realize magnetoelectric (ME) coupling effect while developing novel multifunctional devices. The combined charge and strain effects can produce multilevel manipulation in multiferroic heterostructures. Both charge and strain co-mediated ME effects were investigated in NiFe2O4/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (NFO/PMN-PT) and NFO/Pt/PMN-PT heterostructures. The charge effect was detected by the existence of magnetization imparities between the positive and negative fields. The imparities could be enlarged by inserting a Pt buffer layer between the NFO film and PMN-PT substrate. The suppressed depolarization field effect enhanced ferroelectric polarization of PMN-PT, which strengthened the polarization-dependent charge effect in the NFO/Pt/PMN-PT heterostructures. The enhancement of the charge effect helped achieve a stronger ferromagnetic-ferroelectric coupling effect.

Correlation between the Expression of Topo IIα and Ki67 in breast cancer and its clinical Pathological characteristics.

OBJECTIVE: To investigate the expression of Topo IIα and Ki67 and its clinical significance. METHODS: The clinical pathological data of one hundred and sixteen invasive breast cancer patients who were admitted into our hospital from July 2013 to December 2015 and underwent radical mastectomy were retrospectively analyzed. The expression of topoisomerase (Topo) IIα and Ki67 was detected using immunohistochemical method, and the correlation between the two kinds of proteins and the general clinical pathological characteristics of the patients was analyzed. RESULTS: The positive expression rates of Topo IIα and Ki67 in breast cancer were 58.6% and 75% respectively. The expression of Topo IIα was in no apparent correlation with the age, tumor size, estrogen receptor (ER), progesterone receptor (PR) and human epidermal growth factor receptor 2 (HER-2) (P>0.05), but in a correlation with the number of metastatic lymph glands (P<0.05). The expression of Ki67 was in no apparent correlation with the age, tumor size, EP and HER-2, but in a correlation with the number of metastatic lymph glands and PR (P<0.05). The multi-factor logistic regression analysis results suggested that the number of metastatic lymph glands was the independent predictive factor of Topo IIα positive expression and the number of metastatic lymph glands and PR protein expression state are the independent predictive factors of Ki67 positive expression. CONCLUSION: Topo IIα and Ki67 can be regarded as the indicators for reflecting the proliferation activity of tumor cells, and the detection of Topo IIα and Ki67 expression is of great significance to the prognosis evaluation of breast cancer patients and clinical treatment.

Reconfigurable spin current transmission and magnon-magnon coupling in hybrid ferrimagnetic insulators.

Coherent spin waves possess immense potential in wave-based information computation, storage, and transmission with high fidelity and ultra-low energy consumption. However, despite their seminal importance for magnonic devices, there is a paucity of both structural prototypes and theoretical frameworks that regulate the spin current transmission and magnon hybridization mediated by coherent spin waves. Here, we demonstrate reconfigurable coherent spin current transmission, as well as magnon-magnon coupling, in a hybrid ferrimagnetic heterostructure comprising epitaxial Gd3Fe5O12 and Y3Fe5O12 insulators. By adjusting the compensated moment in Gd3Fe5O12, magnon-magnon coupling was achieved and engineered with pronounced anticrossings between two Kittel modes, accompanied by divergent dissipative coupling approaching the magnetic compensation temperature of Gd3Fe5O12 (TM,GdIG), which were modeled by coherent spin pumping. Remarkably, we further identified, both experimentally and theoretically, a drastic variation in the coherent spin wave-mediated spin current across TM,GdIG, which manifested as a strong dependence on the relative alignment of magnetic moments. Our findings provide significant fundamental insight into the reconfiguration of coherent spin waves and offer a new route towards constructing artificial magnonic architectures.

Anisotropic Superconducting Nb2 CTx MXene Processed by Atomic Exchange at the Wafer Scale.

Superconductivty has recently been induced in MXenes through surface modification. However, the previous reports have mostly been based on powders or cold-pressed pellets, with no known reports on the intrinsic superconsucting properties of MXenes at the nanoale. Here, it is developed a high-temperature atomic exchange process in NH3 atmosphere which induces superconductivity in either singleflakes or thin films of Nb2 CTx MXene. The exchange process between nitrogen atoms and fluorine, carbon, and oxygen atoms in the MXene lattice and related structural adjustments are studied using both experiments and density functional theory. Using either single-flake or thin-film devices, an anisotropic magnetic response of the 2D superconducting transformation has been successfully revealed. The anisotropic superconductivity is further demonstrated using superconducting thin films uniformly deposited over a 4 in. wafers, which opens up the possibility of scalable MXene-based superconducting devices.

Nonlocal Spin Valves Based on Graphene/Fe3GeTe2 van der Waals Heterostructures.

With recent advances in two-dimensional (2D) ferromagnets with enhanced Curie temperatures, it is possible to develop all-2D spintronic devices with high-quality interfaces using 2D ferromagnets. In this study, we have successfully fabricated nonlocal spin valves with Fe3GeTe2 (FGT) as the spin source and detector and multilayer graphene as the spin transport channel. The nonlocal spin transport signal was found to strongly depend on temperature and disappear at a temperature below the Curie temperature of the FGT flakes, which stemmed from the temperature-dependent ferromagnetism of FGT. The spin injection efficiency was estimated to be about 1%, close to that of conventional nonlocal spin valves with transparent contacts between ferromagnetic electrodes and the graphene channel. In addition, the spin transport signal was found to depend on the direction of the magnetic field and the magnitude of the current, which was due to the strong perpendicular magnetic anisotropy of FGT and the thermal effect, respectively. Our results provide opportunities to extend the applications of van der Waals heterostructures in spintronic devices.

Switching magnetic strip orientation using electric fields.

In spintronics, ordered magnetic domains are important for magnetic microdevices and controlling the orientation of ordered magnetic domains is important for applications such as domain wall resistance and spin wave propagation. Although a magnetic field or a current can reorient ordered magnetic domains, an energy-efficient electric-field-driven rotation of the ordered magnetic domains remains elusive. Here, using a nanotrenched polymeric layer, we obtain ordered magnetic strip domains in Ni films on a ferroelectric substrate. By applying electric fields to the ferroelectric substrate, we demonstrate that the ordered magnetic strip domains in Ni films are switched between the y- and x-axes driven by electric-fields. This switching of magnetic strip orientation is attributed to the electric-field-modulated in-plane magnetic anisotropies along the x- and y-axes of the Ni films, which are caused by the anisotropic biaxial strain of the ferroelectric substrate via strain-mediated magnetoelectric coupling. These results provide an energy-efficient approach for manipulating the ordered magnetic domains using electric fields.

Controllable Skyrmionic Phase Transition between Néel Skyrmions and Bloch Skyrmionic Bubbles in van der Waals Ferromagnet Fe3-δ GeTe2.

The van der Waals (vdW) ferromagnet Fe3-δ GeTe2 has garnered significant research interest as a platform for skyrmionic spin configurations, that is, skyrmions and skyrmionic bubbles. However, despite extensive efforts, the origin of the Dzyaloshinskii-Moriya interaction (DMI) in Fe3-δ GeTe2 remains elusive, making it challenging to acquire these skyrmionic phases in a controlled manner. In this study, it is demonstrated that the Fe content in Fe3-δ GeTe2 has a profound effect on the crystal structure, DMI, and skyrmionic phase. For the first time, a marked increase in Fe atom displacement with decreasing Fe content is observed, transforming the original centrosymmetric crystal structure into a non-centrosymmetric symmetry, leading to a considerable DMI. Additionally, by varying the Fe content and sample thickness, a controllable transition between Néel-type skyrmions and Bloch-type skyrmionic bubbles is achieved, governed by a delicate interplay between dipole-dipole interaction and the DMI. The findings offer novel insights into the variable skyrmionic phases in Fe3-δ GeTe2 and provide the impetus for developing vdW ferromagnet-based spintronic devices.

Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation.

Room-temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano-spintronic devices. However, such skyrmion-hosting materials are rare in nature. In this study, a self-intercalated transition metal dichalcogenide Cr1+ x Te2 with a layered crystal structure that hosts room-temperature skyrmions and exhibits large THE is reported. By tuning the self-intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out-of-plane to the in-plane configuration are achieved. Based on the intercalation engineering, room-temperature skyrmions are successfully created in Cr1.53 Te2 with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion-induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.

Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO3 thin films via polarization rotation.

Polarization rotation caused by various strains, such as substrate and/or chemical strain, is essential to control the electronic structure and properties of ferroelectric materials. This study proposes anion-induced polarization rotation with chemical strain, which effectively improves ferroelectricity. A method for the sulfurization of BiFeO3 thin films by introducing sulfur anions is presented. The sulfurized films exhibited substantial enhancement in room-temperature ferroelectric polarization through polarization rotation and distortion, with a 170% increase in the remnant polarization from 58 to 100.7 µC cm-2. According to first-principles calculations and the results of X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy, this enhancement arose from the introduction of S atoms driving the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.

Ferroelectricity in layered bismuth oxide down to 1 nanometer.

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.

High-performance van der Waals antiferroelectric CuCrP2S6-based memristors.

Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.

Current-Induced Magnetization Switching Across a Nearly Room-Temperature Compensation Point in an Insulating Compensated Ferrimagnet.

Insulating compensated ferrimagnets, especially hosting room-temperature compensation points, are considered promising candidates for developing ultra-high-density and ultrafast magnonic devices owing to combining the characteristics of both ferromagnets and antiferromagnets. These intriguing features become outstanding close to their compensation points. However, their spin-orbit torque (SOT)-induced magnetization switching, particularly in the vicinity of the compensation points, remains unclear. Herein, we systematically investigated the SOT in insulating compensated ferrimagnetic Gd3Fe5O12/Pt heterostructures with perpendicular magnetic anisotropy. A nearly room-temperature compensation point (Tcomp ∼ 297 K) was consistently identified by the magnetization curves, spin Hall-induced anomalous Hall effect, and spin Hall magnetoresistance measurements. Moreover, using 100 ns duration pulsed current, deterministic current-induced magnetization switching below and above Tcomp, even at 294 and 301 K, was achieved with opposite switching polarity. It is found that a large current is required to switch the magnetization in the vicinity of Tcomp, although the effective SOT field increases close to Tcomp. Our finding provides alternative opportunities for exploring ultrafast room-temperature magnon-based devices.

Association between metformin use and the risk of age-related macular degeneration in patients with type 2 diabetes: a retrospective study.

OBJECTIVES: To investigate the effect of metformin on the decreased risk of developing age-related macular degeneration (AMD) in patients with type 2 diabetes mellitus (T2DM) for ≥10 years. DESIGN: A retrospective study. PARTICIPANTS: Patients aged ≥50 with a diagnosis of T2DM no less than 10 years were included. METHODS: Variables predisposing to AMD were reviewed; the potential confounders related to T2DM or AMD were selected from literature records; AMD and diabetic retinopathy (DR) were diagnosed by funduscopy, optical coherence tomography and/or fluorescein angiography. The subgroup analysis was performed in early and late AMD. The protective effect of metformin was evaluated in duration-response and dose-response patterns. RESULTS: A total of 324 patients (115 metformin non-users and 209 users) were included in the final analysis. AMD was observed in 15.8% of metformin users and 45.2% of metformin non-users (p<0.0001). The ORs for any AMD, early AMD and late AMD present in patients with DR were 0.06 (0.02-0.20), 0.03 (0.00-0.20) and 0.17 (0.04-0.75). The serum high-density lipoprotein level was positively associated with the late AMD risk (p=0.0054). When analysed by the tertiles of cumulative duration, a similarly reduced risk was observed for the second (5-9 years) (OR: 0.24, 95% CI: 0.08 to 0.75) and third tertiles (≥10 years) (OR: 0.22, 95% CI: 0.09 to 0.52) compared with the first tertile (≤4 years). CONCLUSION: Among patients with T2DM for ≥10 years, metformin users were less likely to develop any AMD and early AMD than non-users; however, the late AMD was not significantly associated with the use of metformin. Also, AMD was less prevalent in patients with DR. The prolonged metformin treatment with a high cumulative dose enhanced the protective effect against AMD. Metformin significantly reduces the AMD risk when the cumulative duration is >5 years.

Unconventional Spin Pumping and Magnetic Damping in an Insulating Compensated Ferrimagnet.

Recently, the interest in spin pumping (SP) has escalated from ferromagnets into antiferromagnetic systems, potentially enabling fundamental physics and magnonic applications. Compensated ferrimagnets are considered alternative platforms for bridging ferro- and antiferromagnets, but their SP and the associated magnetic damping have been largely overlooked so far despite their seminal importance for magnonics. Herein, an unconventional SP together with magnetic damping in an insulating compensated ferrimagnet Gd3 Fe5 O12 (GdIG) is reported. Remarkably, the divergence of the nonlocal effective magnetic damping induced by SP close to the compensation temperature in GdIG/Cu/Pt heterostructures is identified unambiguously. Furthermore, the coherent and incoherent spin currents, generated by SP and the spin Seebeck effect, respectively, undergo a distinct direction change with the variation of temperature. The physical mechanisms underlying these observations are self-consistently clarified by the ferrimagnetic counterpart of SP and the handedness-related spin-wave spectra. The findings broaden the conventional paradigm of the ferromagnetic SP model and open new opportunities for exploring the ferrimagnetic magnonic devices.

Electrically and optically erasable non-volatile two-dimensional electron gas memory.

The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.