Preparation and unique electrical behaviors of monodispersed hybrid nanorattles of metal nanocores with hairy electroactive polymer shells.

A versatile template-assisted strategy for the preparation of monodispersed rattle-type hybrid nanospheres, encapsulating a movable Au nanocore in the hollow cavity of a hairy electroactive polymer shell (Au@air@PTEMA-g-P3HT hybrid nanorattles; PTEMA: poly(2-(thiophen-3-yl)ethyl methacrylate; P3HT: poly(3-hexylthiophene), was reported. The Au@silica core-shell nanoparticles, prepared by the modified Stöber sol-gel process on Au nanoparticle seeds, were used as templates for the synthesis of Au@silica@PTEMA core-double shell nanospheres. Subsequent oxidative graft polymerization of 3-hexylthiophene from the exterior surface of the Au@silica@PTEMA core-double shell nanospheres allowed the tailoring of surface functionality with electroactive P3HT brushes (Au@silica@PTEMA-g-P3HT nanospheres). The Au@air@ PTEMA-g-P3HT hybrid nanorattles were obtained after etching of the silica interlayer by HF. The as-prepared nanorattles were dispersed into an electrically insulating polystyrene matrix and for the first time used to fabricate nonvolatile memory devices. As a result, unique electrical behaviors, including insulator behavior, write-once-read-many-times and rewritable memory effects, and conductor behavior as well, were observed in the Al/Au@air@PTEMA-g-P3HT+PS/ITO (ITO: indium-tin oxide) sandwich thin-film devices.

Transposition of the Zorro2 retrotransposon is activated by miconazole in Candida albicans.

Zorro2 is a member of a non-long terminal repeat (LTR) retrotransposon family in Candida albicans, but as yet no clear evidence has been provided to establish either transcription or transposition activity for Zorro2. In this study, the relative expression changes of two open reading frames in Zorro2, ORF19.7274 and ORF19.7275, were examined in response to miconazole (MCZ), and were found to be increased by this treatment. As well, the copy number and the transcripts of Zorro2 in MCZ-induced resistant daughter strains were increased compared to the parental strain, indicating that transposition of Zorro2 occurred during long-term MCZ treatment. Intriguingly, the transcription activity of Zorro2 retrotransposons was significantly inhibited when the cells were treated with MCZ together with antioxidant N-acetyl-L-cysteine (NAC). As both the level of intracellular reactive oxygen species (ROS) and the expression of genes involving DNA repair activated by MCZ were reduced when combined with the treatment of NAC, we propose that the damage caused by accumulation of ROS under MCZ stress is a major reason for the transcription and transposition activation of the Zorro2 retrotransposon.

In situ synthesis and nonvolatile rewritable-memory effect of polyaniline-functionalized graphene oxide.

A new polyaniline (PANI)-functionalized graphene oxide (GO-PANI) was prepared by using an in situ oxidative graft polymerization of aniline on the surface of GO. Its highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), ionization potential (IP), and electron affinity (EA) values experimentally estimated by the onset of the redox potentials were -5.33, -3.57, 5.59, and 3.83 eV, respectively. A bistable electrical-switching effect was observed in electronic device with the GO-PANI film sandwiched between the indium tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, the low-conductivity (OFF) state and the high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep, and can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of -1 V for 3 h and 10(8) read cycles at -1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. An ON/OFF current ratio of more than 10(4) at -1 V achieved in this memory device is high enough to promise a low misreading rate through the precise control of the ON and OFF states. The mechanism associated with the memory effects was elucidated from molecular simulation results.

Nonvolatile rewritable memory effects in graphene oxide functionalized by conjugated polymer containing fluorene and carbazole units.

A new polymer, poly[{9,9-di(triphenylamine)fluorene}(9,9-dihexylfluorene)(4-aminophenylcarbazole)] (PFCz) was synthesized and used in a reaction with graphene oxide (GO) containing surface-bonded acyl chloride moieties to give a soluble GO-based polymer material GO-PFCz. A bistable electrical switching effect was observed in an electronic device in which the GO-PFCz film was sandwiched between indium-tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of -1 V for 3 h and 10(8) read cycles at -1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. The mechanism associated with the memory effects was elucidated from molecular simulation results and in-situ photoluminescence spectra of the GO-PFCz film under different electrical biases.

[Advances in the study of Candida albicans gene mutation on azole drug resistance].

Gene mutation of Candida albicans is one of the main causes for azole drug resistance. Different types of variation play different roles in promoting the process of drug resistance. ERG series of gene mutations primarily affect the ergosterol synthesis pathway. When the regulatory factors TAC1 for CDR1 gene and Mrr1 for MDR1 gene generate mutations, the expression level of drug efflux pump protein in Candida albicans may be changed. In addition, gene copy number variation is also gaining attention. Therefore, the research of mutation resistance-associated genes has a positive meaning to explore the mechanism of drug resistance in Candida albicans.

Bistable electrical switching and memory effects in a thin film of copolymer containing electron donor-acceptor moieties and europium complexes.

A nonconjugated methacrylate copolymer (PCzOxEu) containing carbazole moieties (electron donors), 1,3,4-oxadiazole moieties (electron acceptors), and europium complexes in the pendant groups was synthesized via free radical copolymerization of methacrylate monomers containing the respective functional groups. The molecular structure and composition of PCzOxEu was characterized by elemental analysis, FT-IR, 1H NMR, 13C NMR, UV-vis absorption and fluorescence spectroscopies, gel permeation chromatography (GPC), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CyV). The resulting copolymer exhibited a relatively high glass transition temperature (Tg approximately 125 degrees C) and good solubility in common organic solvents. It could be cast into transparent films from solutions. For a thin film of PCzOxEu sandwiched between an indium-tin oxide (ITO) electrode and an Al electrode (ITO/PCzOxEu/Al), the structure behaved as a nonvolatile flash (rewritable) memory with accessible electronic states that could be written, read, and erased. The polymer memory exhibited an ON/OFF current ratio up to 10(5), switching response time of approximately 1.5 micros, more than 10(6) read cycles, retention time of more than 8 h, and write/erase voltages of about 4.4 V/-2.8 V under ambient conditions. The roles of oxadiazole moieties in improving the response time and retention time of the memory device were elucidated from the molecular simulation results.

Electrical Conductance Tuning and Bistable Switching in Poly(N-vinylcarbazole)-Carbon Nanotube Composite Films.

By varying the carbon nanotube (CNT) content in poly(N-vinylcarbazole) (PVK) composite thin films, the electrical conductance behavior of an indium-tin oxide/PVK-CNT/aluminum (ITO/PVK-CNT/Al) sandwich structure can be tuned in a controlled manner. Distinctly different electrical conductance behaviors, such as (i) insulator behavior, (ii) bistable electrical conductance switching effects (write-once read-many-times (WORM) memory effect and rewritable memory effect), and (iii) conductor behavior, are discernible from the current density-voltage characteristics of the composite films. The turn-on voltage of the two bistable conductance switching devices decreases and the ON/OFF state current ratio of the WORM device increases with the increase in CNT content of the composite film. Both the WORM and rewritable devices are stable under a constant voltage stress or a continuous pulse voltage stress, with an ON/OFF state current ratio in excess of 10(3). The conductance switching effects of the composite films have been attributed to electron trapping in the CNTs of the electron-donating/hole-transporting PVK matrix.

Tristable electrical conductivity switching in a polyfluorene-diphenylpyridine copolymer with pendant carbazole groups.

Tristable electrical conductivity switching and non-volatile memory effects are demonstrated in a conjugated copolymer of poly(2,6-diphenyl-4-((9-ethyl)-9H-carbazole)-pyridinyl-alt-2,7-(9,9-didodecyl)-9H-fluorenyl) (PPCzPF). The indium-tin oxide (ITO)/PPCzPF/Al device can be switched from the low-conductivity (off) state to the first high-conductivity (on-1) state at 1.8 V, with an on/off current ratio of approximately 100. The device can be further switched from the on-1 state to the next higher conductivity (on-2) state at 2.4 V, with an on-2/on-1 current ratio of approximately 20. All the three conductivity states are accessible, stable and non-erasable. The tri-level conductance switching can be explained in terms of field-induced conformational ordering of the polymer chains and enhanced charge-transfer interaction at the PPCzPF/ITO interface.

Conductivity switching and electronic memory effect in polymers with pendant azobenzene chromophores.

Electronic memory devices having the indium-tin oxide/polymer/Al sandwich structure were fabricated from polymers containing pendant azobenzene chromophores in donor-acceptor structures. The reversibility, or rewritability, of the high-conductivity (ON) state was found to be dependent on the terminal moiety of the azobenzene chromophore. While the polymers with electron-accepting terminal moieties (-Br or -NO2) in the pendant azobenzene exhibit write-once, read-many-times (WORM) type memory behavior, those with electron-donating terminal moieties (-OCH3) exhibit rewritable (FLASH) memory behavior. The WORM memory devices have low switching ("write") voltages below -2 V and high ON/OFF current ratios of about 10(4)-10(6). The polarity of the "write" voltage can be reversed by using an electrode with a higher work function than Al, thus excluding metallic filamentary conduction as a cause of the bistable switching phenomenon. The FLASH memory devices have low "write" and "erase" voltages of about -1.7 to -1.8 V and 2.0 to 2.2 V, respectively, and ON/OFF current ratios of about 10(3)-10(4). The electrical bistability observed can be attributed to charge trapping at the azobenzene chromophores, resulting in the charge-separated, high-conductivity state. The proposed mechanism is supported experimentally by a red shift and peak broadening in the UV-visible absorption spectra of the polymer films resulting from the OFF-to-ON electrical transition.

Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60.

A functional polymer (PVK-C60), containing carbazole moieties (electron donors) and fullerene moieties (electron-acceptors) in a molar ratio of about 100:1, was synthesized via covalent tethering of C60 to poly(N-vinylcarbazole) (PVK). The molecular structure and composition of PVK-C60 were characterized by FTIR, Raman, and UV-vis absorption spectroscopy, gel permeation chromatography (GPC), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CyV). The C60-modified PVK exhibited an enhanced glass-transition temperature (Tg = 226 degrees C) and good solubility in organic solvents such as toluene, tetrahydrofuran, chloroform, and N,N-dimethylformamide (DMF). It could be cast into transparent films from solutions. For a thin film of PVK-C60 sandwiched between an indium tin oxide (ITO) electrode and an Al electrode (ITO/PVK-C60/Al), the device behaved as nonvolatile flash (rewritable) memory with accessible electronic states that could be written, read, and erased. The polymer memory exhibited an ON/OFF current ratio of more than 105 and write/erase voltages around -2.8 V/+3.0 V. Both the ON and OFF states were stable under a constant voltage stress of -1 V for 12 h and survived up to 108 read cycles at -1 V under ambient conditions.

Synthesis and dynamic random access memory behavior of a functional polyimide.

The device under testing was a plastic dynamic random access memory based on a donor-functionalized polyimide (TP6F-PI), which exhibited the ability to write, read, erase, and refresh the electrical states. The device had an ON/OFF current ratio up to 105, promising minimal misreading error. Both the on and off states were stable under a constant voltage stress of 1 V and survived up to 108 read cycles at 1 V.