Response and resilience of carbon nanotube micropillars to shear flow.

Interactions between carbon nanotubes (CNTs) and fluid flows are central to the operation of several emerging nanotechnologies. In this paper, we explore the fluid-structure interaction of CNT micropillars in wall-bounded shear flows, relevant to recently developed microscale wall shear stress sensors. We monitor the deformation of CNT micropillars in channel flow as the flow rate and wall shear stress are gradually varied. We quantify how the micropillars bend at low wall shear stress, and then will commonly tilt abruptly from their base above a threshold wall shear stress, which is attributed to the lower density of the micropillars in this region. Some micropillars are observed to flutter rapidly between a vertical and horizontal position around this threshold wall shear stress, before settling to a tilted position as wall shear stress increases further. Tilted micropillars are found to kink sharply near their base, similar to the observed buckling near the base of CNT micropillars in compression. Upon reducing the flow rate, micropillars are found to fully recover from a near horizontal position to a near vertical position, even with repeated on-off cycling. At sufficiently high wall shear stress, the micropillars were found to detach at the catalyst particle-substrate interface. The mechanical response of CNT micropillars in airflow revealed by this study provides a basis for future development efforts and the accurate simulation of CNT micropillar wall shear stress sensors.

Experimental and theoretical aspects of the growth of vertically aligned CNTs by CCVD on AZO substrate.

An efficient and reproducible growth of vertically aligned carbon nanotubes by CCVD requires accurate and specific setting of the synthesis parameters and the properties of catalyst thin layers. In this work, the growth of vertically aligned carbon nanotubes onto AZO (= aluminum doped zinc oxide) glass substrate covered by Al2O3 and Fe-Co catalyst layer system is presented. Investigation of the effect of catalyst composition and synthesis temperature on CVD growth revealed the optimum condition of the synthesis. The analysis of as-prepared samples by SEM, TEM and Raman spectroscopy was carried out to prove the structure and quality of carbon deposit. Theoretical considerations have supported speculative ideas about the role of the support layer, the transformation of the catalyst layer in the presence of hydrogen gas and the growth mechanism of carbon nanotubes. The mechanism of CNT growth is modelled and the order of magnitude of experimentally observed vertical linear growth rate of CNT (several nm/s) is reproduced.

Achieving High-Performance Polymer-Wrapper-Free Aligned Carbon Nanotube Field-Effect Transistors Through Degradable Polymer Wrapping and Efficient Removal Techniques.

Semiconducting carbon nanotubes (s-CNTs) have emerged as a promising alternative to traditional silicon for ultrascaled field-effect transistors (FETs), owing to their exceptional properties. Aligned s-CNTs (A-CNTs) are particularly favored for practical applications due to their ability to provide higher driving current and lower contact resistance compared with individual s-CNTs or random networks. Achieving high-semiconducting-purity A-CNTs typically involves conjugated polymer wrapping for selective separation of s-CNTs, followed by self-assembly techniques. However, the presence of the polymer wrapper on A-CNTs can adversely impact electrical contact, gating efficiency, carrier transport, and device-to-device variations, necessitating its complete removal. While various methods have been explored for polymer removal, accurately characterizing the extent of removal remains a challenge. Traditional techniques such as absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) may not accurately depict the remaining polymer content on A-CNTs due to their inherent detection limits. Consequently, the performance of FETs based on pure polymer-wrapper-free A-CNTs is unclear. In this study, we present an approach for preparing high-semiconducting-purity and polymer-wrapper-free A-CNTs using poly[(9,9-dioctylfluorenyl-2,7-dinitrilomethine)-(9,9-dioctylfluorenyl-2,7-dimethine)] (PFO-N-PFO), a degradable polymer, in conjunction with a modified dimension-limited self-alignment process (m-DLSA). Comprehensive transmission electron microscopy (TEM) characterizations, complemented by absorption and XPS characterizations, provide robust evidence of the successful near-complete removal of the polymer wrapper via a cleaning procedure involving acidic degradation, hot solvent rinsing, and vacuum annealing. Furthermore, top-gated FETs based on these high-semiconducting-purity and polymer-wrapper-free A-CNTs exhibit good performance metrics, including an on-current (Ion) of 2.2 mA/µm, peak transconductance (gm) of 1.1 mS/µm, low contact resistance (Rc) of 191 Ω·µm, and negligible hysteresis, representing a significant advancement in the CNT-based FET technology.

The Synthesis of Sponge-like V2O5/CNT Hybrid Nanostructures Using Vertically Aligned CNTs as Templates.

The fabrication of sponge-like vanadium pentoxide (V2O5) nanostructures using vertically aligned carbon nanotubes (VACNTs) as a template is presented. The VACNTs were grown on silicon substrates by chemical vapor deposition using the Fe/Al bilayer catalyst approach. The V2O5 nanostructures were obtained from the thermal oxidation of metallic vanadium deposited on the VACNTs. Different oxidation temperatures and vanadium thicknesses were used to study the influence of these parameters on the stability of the carbon template and the formation of the V2O5 nanostructures. The morphology of the samples was analyzed by scanning electron microscopy, and the structural characterization was performed by Raman, energy-dispersive X-ray, and X-ray photoelectron spectroscopies. Due to the catalytic properties of V2O5 in the decomposition of carbonaceous materials, it was possible to obtain supported sponge-like structures based on V2O5/CNT composites, in which the CNTs exhibit an increase in their graphitization. The VACNTs can be removed or preserved by modulating the thermal oxidation process and the vanadium thickness.